Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SUM60N10-17-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 100A Power dissipation: 150W Case: TO263 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM65N20-30-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 140A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Pulsed drain current: 140A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 84mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUM70030E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.48mΩ Mounting: SMD Gate charge: 214nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM70030M-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 214nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM70040E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 125W; D2PAK,TO263 Drain-source voltage: 100V Drain current: 120A On-state resistance: 4mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Gate charge: 76nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: D2PAK; TO263 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 789 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM70040M-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 375W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM70042E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Pulsed drain current: 200A Power dissipation: 278W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM70060E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 131A Pulsed drain current: 240A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM70090E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 120A Power dissipation: 125W Case: TO263 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM70101EL-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -120A Pulsed drain current: -240A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 0.19µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM80090E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 128A; Idm: 240A; 125W Drain-source voltage: 150V Drain current: 128A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: reel; tape Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Mounting: SMD Case: D2PAK; TO263 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUM85N15-19-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 85A Pulsed drain current: 180A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM90100E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 150A Pulsed drain current: 250A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12.9mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM90140E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 75A; 125W; D2PAK,TO263 Case: D2PAK; TO263 Mounting: SMD Power dissipation: 125W Polarisation: unipolar Gate charge: 64nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 200V Drain current: 75A On-state resistance: 17mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUM90142E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A Case: TO263 Mounting: SMD Power dissipation: 375W Polarisation: unipolar Kind of package: reel; tape Gate charge: 87nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Drain-source voltage: 200V Drain current: 90A On-state resistance: 16.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM90220E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 64A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 64A Pulsed drain current: 100A Power dissipation: 230W Case: TO263 Gate-source voltage: ±20V On-state resistance: 23.5mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM90330E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM90N03-2M2P-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 90A Pulsed drain current: 200A Power dissipation: 250W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 257nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM90N10-8M2P-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 240A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Pulsed drain current: 240A Power dissipation: 300W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 647 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM90P10-19L-E3 | VISHAY |
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auf Bestellung 727 Stücke: Lieferzeit 7-14 Tag (e) |
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SUP10250E-GE3 | VISHAY |
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auf Bestellung 474 Stücke: Lieferzeit 7-14 Tag (e) |
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SUP40010EL-GE3 | VISHAY |
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Produkt ist nicht verfügbar |
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SUP40012EL-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 150A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 300A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.36mΩ Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP50010E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Gate charge: 212nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP50020E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 120A; Idm: 300A Mounting: THT Pulsed drain current: 300A Power dissipation: 375W Gate charge: 128nC Polarisation: unipolar Technology: TrenchFET® Drain current: 120A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 2.7mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP50020EL-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 120A; Idm: 300A Mounting: THT Pulsed drain current: 300A Power dissipation: 375W Gate charge: 126nC Polarisation: unipolar Technology: TrenchFET® Drain current: 120A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 2.8mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP53P06-20-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -46.8A; 66.7W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -46.8A Power dissipation: 66.7W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 611 Stücke: Lieferzeit 7-14 Tag (e) |
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SUP57N20-33-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 300W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 33A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 93mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 931 Stücke: Lieferzeit 7-14 Tag (e) |
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SUP60020E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: THT Gate charge: 227nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP60030E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 120A; Idm: 250A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 250A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.6mΩ Mounting: THT Gate charge: 141nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP70030E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 3.84mΩ Mounting: THT Gate charge: 214nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP70040E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP70042E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Pulsed drain current: 200A Power dissipation: 278W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP70060E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 131A Pulsed drain current: 240A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6.4mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP70090E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 120A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP70101EL-GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -120A Pulsed drain current: -240A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP80090E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 125W; TO220AB Case: TO220AB Mounting: THT Kind of package: tube Drain current: 74A On-state resistance: 9.4mΩ Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Drain-source voltage: 150V Gate charge: 63nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP85N10-10-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 359 Stücke: Lieferzeit 7-14 Tag (e) |
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SUP85N10-10-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 85A; Idm: 240A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 85A Pulsed drain current: 240A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 160nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 250 Stücke: Lieferzeit 7-14 Tag (e) |
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SUP85N15-21-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 85A Pulsed drain current: 180A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP90100E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 150A Pulsed drain current: 250A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 12.4mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP90140E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A Case: TO220AB Mounting: THT Power dissipation: 375W Polarisation: unipolar Kind of package: tube Gate charge: 96nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Drain-source voltage: 200V Drain current: 90A On-state resistance: 18mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP90142E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Pulsed drain current: 240A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 16.9mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP90220E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 64A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 64A Pulsed drain current: 100A Power dissipation: 230W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 23.5mΩ Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP90330E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP90N06-6M0P-E3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 90A; Idm: 240A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 90A Pulsed drain current: 240A Power dissipation: 272W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP90P06-09L-E3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -67A; 250W; TO220AB Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -67A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 11.8mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 117 Stücke: Lieferzeit 7-14 Tag (e) |
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T1110P6-SD-F | VISHAY |
![]() Description: PIN IR photodiode; SMD; 940nm; 430÷1100nm; 60°; 65mW Mounting: SMD Wavelength: 430...1100nm Viewing angle: 60° Type of photoelement: PIN IR photodiode Wavelength of peak sensitivity: 940nm Active area: 7.5mm2 Dimensions: 2.97x2.97x0.28mm Optical power: 65mW Anzahl je Verpackung: 8000 Stücke |
Produkt ist nicht verfügbar |
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T18104KT10 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 100kΩ; 750mW; ±10%; linear Min. insulation resistance: 1TΩ Operating temperature: -55...125°C Power: 0.75W Resistance: 100kΩ Tolerance: ±10% Temperature coefficient: 100ppm/°C IP rating: IP67 Potentiometer standard: 19mm Type of potentiometer: mounting Number of electrical turns: 15 ±1 Characteristics: linear Track material: cermet Kind of potentiometer: multiturn Engineering PN: 43P; 89; 3006 Mounting: THT Anzahl je Verpackung: 1 Stücke |
auf Bestellung 146 Stücke: Lieferzeit 7-14 Tag (e) |
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T18101KT10 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 100Ω; 750mW; ±10%; linear Mounting: THT Resistance: 100Ω Power: 0.75W Tolerance: ±10% Operating temperature: -55...125°C Temperature coefficient: 100ppm/°C Min. insulation resistance: 1TΩ Engineering PN: 43P; 89; 3006 IP rating: IP67 Potentiometer standard: 19mm Type of potentiometer: mounting Number of electrical turns: 15 ±1 Characteristics: linear Track material: cermet Kind of potentiometer: multiturn Anzahl je Verpackung: 500 Stücke |
Produkt ist nicht verfügbar |
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T18103KT10 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 10kΩ; 750mW; ±10%; linear Engineering PN: 43P; 89; 3006 IP rating: IP67 Potentiometer standard: 19mm Type of potentiometer: mounting Number of electrical turns: 15 ±1 Characteristics: linear Track material: cermet Kind of potentiometer: multiturn Mounting: THT Min. insulation resistance: 1TΩ Operating temperature: -55...125°C Power: 0.75W Resistance: 10kΩ Tolerance: ±10% Temperature coefficient: 100ppm/°C Anzahl je Verpackung: 1 Stücke |
auf Bestellung 143 Stücke: Lieferzeit 7-14 Tag (e) |
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T18100KT10 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 10Ω; 750mW; ±10%; linear Mounting: THT Resistance: 10Ω Power: 0.75W Tolerance: ±10% Operating temperature: -55...125°C Temperature coefficient: 200ppm/°C Min. insulation resistance: 1TΩ Engineering PN: 43P; 89; 3006 IP rating: IP67 Potentiometer standard: 19mm Type of potentiometer: mounting Number of electrical turns: 15 ±1 Characteristics: linear Track material: cermet Kind of potentiometer: multiturn Anzahl je Verpackung: 1 Stücke |
auf Bestellung 492 Stücke: Lieferzeit 7-14 Tag (e) |
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T18102KT10 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 1kΩ; 750mW; ±10%; linear Mounting: THT Operating temperature: -55...125°C Characteristics: linear Track material: cermet Kind of potentiometer: multiturn Engineering PN: 43P; 89; 3006 Min. insulation resistance: 1TΩ Power: 0.75W Resistance: 1kΩ Tolerance: ±10% Temperature coefficient: 100ppm/°C IP rating: IP67 Potentiometer standard: 19mm Type of potentiometer: mounting Number of electrical turns: 15 ±1 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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T18105KT10 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear Mounting: THT Resistance: 1MΩ Power: 0.75W Tolerance: ±10% Operating temperature: -55...125°C Temperature coefficient: 100ppm/°C Min. insulation resistance: 1TΩ Track material: cermet Kind of potentiometer: multiturn Engineering PN: 43P; 89; 3006 IP rating: IP67 Potentiometer standard: 19mm Type of potentiometer: mounting Number of electrical turns: 15 ±1 Characteristics: linear Anzahl je Verpackung: 1 Stücke |
auf Bestellung 364 Stücke: Lieferzeit 7-14 Tag (e) |
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T18201KT10 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 200Ω; 750mW; ±10%; linear Mounting: THT Resistance: 200Ω Tolerance: ±10% Power: 0.75W Operating temperature: -55...125°C Temperature coefficient: 100ppm/°C Min. insulation resistance: 1TΩ Track material: cermet Kind of potentiometer: multiturn Engineering PN: 43P; 89; 3006 IP rating: IP67 Potentiometer standard: 19mm Type of potentiometer: mounting Number of electrical turns: 15 ±1 Characteristics: linear Anzahl je Verpackung: 1 Stücke |
auf Bestellung 591 Stücke: Lieferzeit 7-14 Tag (e) |
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T18203KT10 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear Mounting: THT Resistance: 20kΩ Power: 0.75W Tolerance: ±10% Operating temperature: -55...125°C Temperature coefficient: 100ppm/°C Min. insulation resistance: 1TΩ Track material: cermet Kind of potentiometer: multiturn Engineering PN: 43P; 89; 3006 IP rating: IP67 Potentiometer standard: 19mm Type of potentiometer: mounting Number of electrical turns: 15 ±1 Characteristics: linear Anzahl je Verpackung: 1 Stücke |
auf Bestellung 253 Stücke: Lieferzeit 7-14 Tag (e) |
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T18200KT10 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 20Ω; 750mW; ±10%; linear Operating temperature: -55...125°C Track material: cermet Kind of potentiometer: multiturn Engineering PN: 43P; 89; 3006 Mounting: THT Min. insulation resistance: 1TΩ Power: 0.75W Resistance: 20Ω Tolerance: ±10% Temperature coefficient: 100ppm/°C IP rating: IP67 Potentiometer standard: 19mm Type of potentiometer: mounting Number of electrical turns: 15 ±1 Characteristics: linear Anzahl je Verpackung: 500 Stücke |
Produkt ist nicht verfügbar |
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T18202KT10 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 2kΩ; 750mW; ±10%; linear Mounting: THT Resistance: 2kΩ Power: 0.75W Tolerance: ±10% Operating temperature: -55...125°C Temperature coefficient: 100ppm/°C Min. insulation resistance: 1TΩ Track material: cermet Kind of potentiometer: multiturn Engineering PN: 43P; 89; 3006 IP rating: IP67 Potentiometer standard: 19mm Type of potentiometer: mounting Number of electrical turns: 15 ±1 Characteristics: linear Anzahl je Verpackung: 1 Stücke |
auf Bestellung 546 Stücke: Lieferzeit 7-14 Tag (e) |
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T18504KT10 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 500kΩ; 750mW; ±10%; linear Engineering PN: 43P; 89; 3006 Characteristics: linear Track material: cermet Kind of potentiometer: multiturn Mounting: THT Min. insulation resistance: 1TΩ Operating temperature: -55...125°C Power: 0.75W Resistance: 500kΩ Tolerance: ±10% Temperature coefficient: 100ppm/°C IP rating: IP67 Potentiometer standard: 19mm Type of potentiometer: mounting Number of electrical turns: 15 ±1 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 127 Stücke: Lieferzeit 7-14 Tag (e) |
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T18501KT10 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 500Ω; 750mW; ±10%; linear Engineering PN: 43P; 89; 3006 Characteristics: linear Track material: cermet Kind of potentiometer: multiturn Mounting: THT Min. insulation resistance: 1TΩ Operating temperature: -55...125°C Power: 0.75W Resistance: 500Ω Tolerance: ±10% Temperature coefficient: 100ppm/°C IP rating: IP67 Potentiometer standard: 19mm Type of potentiometer: mounting Number of electrical turns: 15 ±1 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
SUM60N10-17-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM65N20-30-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 140A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Pulsed drain current: 140A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 140A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Pulsed drain current: 140A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUM70030E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.48mΩ
Mounting: SMD
Gate charge: 214nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.48mΩ
Mounting: SMD
Gate charge: 214nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70030M-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 214nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 214nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70040E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 125W; D2PAK,TO263
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 76nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK; TO263
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 125W; D2PAK,TO263
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 76nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK; TO263
Anzahl je Verpackung: 1 Stücke
auf Bestellung 789 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 4.02 EUR |
20+ | 3.62 EUR |
26+ | 2.77 EUR |
28+ | 2.62 EUR |
SUM70040M-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 375W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 375W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70042E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 200A
Power dissipation: 278W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 200A
Power dissipation: 278W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70060E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 131A
Pulsed drain current: 240A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 131A
Pulsed drain current: 240A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70090E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 120A
Power dissipation: 125W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 120A
Power dissipation: 125W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70101EL-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM80090E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 128A; Idm: 240A; 125W
Drain-source voltage: 150V
Drain current: 128A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Mounting: SMD
Case: D2PAK; TO263
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 128A; Idm: 240A; 125W
Drain-source voltage: 150V
Drain current: 128A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Mounting: SMD
Case: D2PAK; TO263
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUM85N15-19-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 85A
Pulsed drain current: 180A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 85A
Pulsed drain current: 180A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90100E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Pulsed drain current: 250A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.9mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Pulsed drain current: 250A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.9mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90140E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 75A; 125W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 64nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 75A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 75A; 125W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 64nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 75A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUM90142E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Case: TO263
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Drain-source voltage: 200V
Drain current: 90A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Case: TO263
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Drain-source voltage: 200V
Drain current: 90A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90220E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 64A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 64A
Pulsed drain current: 100A
Power dissipation: 230W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 23.5mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 64A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 64A
Pulsed drain current: 100A
Power dissipation: 230W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 23.5mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90330E-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90N03-2M2P-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Pulsed drain current: 200A
Power dissipation: 250W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 257nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Pulsed drain current: 200A
Power dissipation: 250W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 257nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90N10-8M2P-E3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 240A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 240A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 647 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 3.13 EUR |
26+ | 2.83 EUR |
34+ | 2.16 EUR |
35+ | 2.04 EUR |
SUM90P10-19L-E3 |
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Hersteller: VISHAY
SUM90P10-19L-E3 SMD P channel transistors
SUM90P10-19L-E3 SMD P channel transistors
auf Bestellung 727 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 5.52 EUR |
19+ | 3.85 EUR |
20+ | 3.63 EUR |
SUP10250E-GE3 |
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Hersteller: VISHAY
SUP10250E-GE3 THT N channel transistors
SUP10250E-GE3 THT N channel transistors
auf Bestellung 474 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 4.2 EUR |
26+ | 2.76 EUR |
28+ | 2.6 EUR |
SUP40010EL-GE3 |
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Hersteller: VISHAY
SUP40010EL-GE3 THT N channel transistors
SUP40010EL-GE3 THT N channel transistors
Produkt ist nicht verfügbar
SUP40012EL-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.36mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.36mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP50010E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 212nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 212nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP50020E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 120A; Idm: 300A
Mounting: THT
Pulsed drain current: 300A
Power dissipation: 375W
Gate charge: 128nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 2.7mΩ
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 120A; Idm: 300A
Mounting: THT
Pulsed drain current: 300A
Power dissipation: 375W
Gate charge: 128nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 2.7mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP50020EL-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 120A; Idm: 300A
Mounting: THT
Pulsed drain current: 300A
Power dissipation: 375W
Gate charge: 126nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 2.8mΩ
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 120A; Idm: 300A
Mounting: THT
Pulsed drain current: 300A
Power dissipation: 375W
Gate charge: 126nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 2.8mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP53P06-20-E3 |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -46.8A; 66.7W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -46.8A
Power dissipation: 66.7W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -46.8A; 66.7W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -46.8A
Power dissipation: 66.7W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 611 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 3.1 EUR |
26+ | 2.79 EUR |
36+ | 2.03 EUR |
38+ | 1.92 EUR |
SUP57N20-33-E3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 931 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 3.59 EUR |
32+ | 2.25 EUR |
34+ | 2.13 EUR |
SUP60020E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP60030E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 120A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 250A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 120A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 250A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70030E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.84mΩ
Mounting: THT
Gate charge: 214nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.84mΩ
Mounting: THT
Gate charge: 214nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70040E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70042E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 200A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 200A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70060E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 131A
Pulsed drain current: 240A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 131A
Pulsed drain current: 240A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70090E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70101EL-GE3 |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP80090E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 125W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 74A
On-state resistance: 9.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Drain-source voltage: 150V
Gate charge: 63nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 125W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 74A
On-state resistance: 9.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Drain-source voltage: 150V
Gate charge: 63nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP85N10-10-E3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 359 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.85 EUR |
27+ | 2.67 EUR |
29+ | 2.53 EUR |
SUP85N10-10-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 85A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 85A
Pulsed drain current: 240A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 85A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 85A
Pulsed drain current: 240A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 250 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.93 EUR |
26+ | 2.77 EUR |
28+ | 2.62 EUR |
1000+ | 2.53 EUR |
SUP85N15-21-E3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 85A
Pulsed drain current: 180A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 85A
Pulsed drain current: 180A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90100E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Pulsed drain current: 250A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Pulsed drain current: 250A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90140E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Case: TO220AB
Mounting: THT
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 96nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Drain-source voltage: 200V
Drain current: 90A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Case: TO220AB
Mounting: THT
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 96nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Drain-source voltage: 200V
Drain current: 90A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90142E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.9mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.9mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90220E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 64A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 64A
Pulsed drain current: 100A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 23.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 64A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 64A
Pulsed drain current: 100A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 23.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90330E-GE3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90N06-6M0P-E3 |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 90A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 272W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 90A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 272W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90P06-09L-E3 |
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Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -67A; 250W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -67A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -67A; 250W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -67A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 117 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 7.46 EUR |
13+ | 5.81 EUR |
14+ | 5.49 EUR |
50+ | 5.29 EUR |
T1110P6-SD-F |
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Hersteller: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; SMD; 940nm; 430÷1100nm; 60°; 65mW
Mounting: SMD
Wavelength: 430...1100nm
Viewing angle: 60°
Type of photoelement: PIN IR photodiode
Wavelength of peak sensitivity: 940nm
Active area: 7.5mm2
Dimensions: 2.97x2.97x0.28mm
Optical power: 65mW
Anzahl je Verpackung: 8000 Stücke
Category: Photodiodes
Description: PIN IR photodiode; SMD; 940nm; 430÷1100nm; 60°; 65mW
Mounting: SMD
Wavelength: 430...1100nm
Viewing angle: 60°
Type of photoelement: PIN IR photodiode
Wavelength of peak sensitivity: 940nm
Active area: 7.5mm2
Dimensions: 2.97x2.97x0.28mm
Optical power: 65mW
Anzahl je Verpackung: 8000 Stücke
Produkt ist nicht verfügbar
T18104KT10 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 100kΩ; 750mW; ±10%; linear
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 100kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 100kΩ; 750mW; ±10%; linear
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 100kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 2.72 EUR |
35+ | 2.06 EUR |
44+ | 1.64 EUR |
46+ | 1.56 EUR |
T18101KT10 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 100Ω; 750mW; ±10%; linear
Mounting: THT
Resistance: 100Ω
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Anzahl je Verpackung: 500 Stücke
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 100Ω; 750mW; ±10%; linear
Mounting: THT
Resistance: 100Ω
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Anzahl je Verpackung: 500 Stücke
Produkt ist nicht verfügbar
T18103KT10 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 750mW; ±10%; linear
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 10kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Anzahl je Verpackung: 1 Stücke
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 750mW; ±10%; linear
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 10kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 143 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 3.29 EUR |
28+ | 2.59 EUR |
46+ | 1.56 EUR |
49+ | 1.47 EUR |
T18100KT10 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10Ω; 750mW; ±10%; linear
Mounting: THT
Resistance: 10Ω
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 200ppm/°C
Min. insulation resistance: 1TΩ
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Anzahl je Verpackung: 1 Stücke
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10Ω; 750mW; ±10%; linear
Mounting: THT
Resistance: 10Ω
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 200ppm/°C
Min. insulation resistance: 1TΩ
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Anzahl je Verpackung: 1 Stücke
auf Bestellung 492 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 2.3 EUR |
33+ | 2.23 EUR |
44+ | 1.64 EUR |
46+ | 1.56 EUR |
T18102KT10 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1kΩ; 750mW; ±10%; linear
Mounting: THT
Operating temperature: -55...125°C
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Min. insulation resistance: 1TΩ
Power: 0.75W
Resistance: 1kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Anzahl je Verpackung: 1 Stücke
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1kΩ; 750mW; ±10%; linear
Mounting: THT
Operating temperature: -55...125°C
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Min. insulation resistance: 1TΩ
Power: 0.75W
Resistance: 1kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
37+ | 1.96 EUR |
38+ | 1.92 EUR |
47+ | 1.53 EUR |
50+ | 1.44 EUR |
500+ | 1.39 EUR |
T18105KT10 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Mounting: THT
Resistance: 1MΩ
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 1 Stücke
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Mounting: THT
Resistance: 1MΩ
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 1 Stücke
auf Bestellung 364 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 2.52 EUR |
49+ | 1.47 EUR |
52+ | 1.4 EUR |
T18201KT10 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 200Ω; 750mW; ±10%; linear
Mounting: THT
Resistance: 200Ω
Tolerance: ±10%
Power: 0.75W
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 1 Stücke
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 200Ω; 750mW; ±10%; linear
Mounting: THT
Resistance: 200Ω
Tolerance: ±10%
Power: 0.75W
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 1 Stücke
auf Bestellung 591 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 2.2 EUR |
34+ | 2.14 EUR |
44+ | 1.66 EUR |
46+ | 1.56 EUR |
500+ | 1.52 EUR |
T18203KT10 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Mounting: THT
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 1 Stücke
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Mounting: THT
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 1 Stücke
auf Bestellung 253 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 3.75 EUR |
25+ | 2.97 EUR |
44+ | 1.64 EUR |
46+ | 1.56 EUR |
T18200KT10 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20Ω; 750mW; ±10%; linear
Operating temperature: -55...125°C
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Mounting: THT
Min. insulation resistance: 1TΩ
Power: 0.75W
Resistance: 20Ω
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 500 Stücke
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20Ω; 750mW; ±10%; linear
Operating temperature: -55...125°C
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Mounting: THT
Min. insulation resistance: 1TΩ
Power: 0.75W
Resistance: 20Ω
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 500 Stücke
Produkt ist nicht verfügbar
T18202KT10 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 750mW; ±10%; linear
Mounting: THT
Resistance: 2kΩ
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 1 Stücke
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 750mW; ±10%; linear
Mounting: THT
Resistance: 2kΩ
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 1 Stücke
auf Bestellung 546 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.88 EUR |
25+ | 2.95 EUR |
44+ | 1.66 EUR |
46+ | 1.56 EUR |
T18504KT10 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500kΩ; 750mW; ±10%; linear
Engineering PN: 43P; 89; 3006
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 500kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Anzahl je Verpackung: 1 Stücke
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500kΩ; 750mW; ±10%; linear
Engineering PN: 43P; 89; 3006
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 500kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 127 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 3.12 EUR |
24+ | 3 EUR |
31+ | 2.36 EUR |
33+ | 2.23 EUR |
500+ | 2.14 EUR |
T18501KT10 |
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Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500Ω; 750mW; ±10%; linear
Engineering PN: 43P; 89; 3006
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 500Ω
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Anzahl je Verpackung: 1 Stücke
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500Ω; 750mW; ±10%; linear
Engineering PN: 43P; 89; 3006
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 500Ω
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Anzahl je Verpackung: 1 Stücke
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