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SUM60N10-17-E3 VISHAY 72070.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM65N20-30-E3 SUM65N20-30-E3 VISHAY SUM65N20-30.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 140A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Pulsed drain current: 140A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUM70030E-GE3 VISHAY sum70030e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.48mΩ
Mounting: SMD
Gate charge: 214nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70030M-GE3 VISHAY sum70030m.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 214nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70040E-GE3 SUM70040E-GE3 VISHAY sum70040e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 125W; D2PAK,TO263
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 76nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK; TO263
Anzahl je Verpackung: 1 Stücke
auf Bestellung 789 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.02 EUR
20+ 3.62 EUR
26+ 2.77 EUR
28+ 2.62 EUR
Mindestbestellmenge: 18
SUM70040M-GE3 VISHAY sum70040m.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 375W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70042E-GE3 VISHAY sum70042e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 200A
Power dissipation: 278W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70060E-GE3 VISHAY sum70060e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 131A
Pulsed drain current: 240A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70090E-GE3 VISHAY sum70090e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 120A
Power dissipation: 125W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70101EL-GE3 VISHAY sum70101el.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM80090E-GE3 SUM80090E-GE3 VISHAY sum80090e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 128A; Idm: 240A; 125W
Drain-source voltage: 150V
Drain current: 128A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Mounting: SMD
Case: D2PAK; TO263
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUM85N15-19-E3 VISHAY 71703.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 85A
Pulsed drain current: 180A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90100E-GE3 VISHAY sum90100e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Pulsed drain current: 250A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.9mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90140E-GE3 SUM90140E-GE3 VISHAY sum90140e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 75A; 125W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 64nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 75A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUM90142E-GE3 VISHAY sum90142e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Case: TO263
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Drain-source voltage: 200V
Drain current: 90A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90220E-GE3 VISHAY sum90220e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 64A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 64A
Pulsed drain current: 100A
Power dissipation: 230W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 23.5mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90330E-GE3 VISHAY sum90330e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90N03-2M2P-E3 VISHAY sum90n03.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Pulsed drain current: 200A
Power dissipation: 250W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 257nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90N10-8M2P-E3 SUM90N10-8M2P-E3 VISHAY sum90n10-8m2p.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 240A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 647 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.13 EUR
26+ 2.83 EUR
34+ 2.16 EUR
35+ 2.04 EUR
Mindestbestellmenge: 23
SUM90P10-19L-E3 VISHAY sum90p10.pdf SUM90P10-19L-E3 SMD P channel transistors
auf Bestellung 727 Stücke:
Lieferzeit 7-14 Tag (e)
13+5.52 EUR
19+ 3.85 EUR
20+ 3.63 EUR
Mindestbestellmenge: 13
SUP10250E-GE3 VISHAY sup10250e.pdf SUP10250E-GE3 THT N channel transistors
auf Bestellung 474 Stücke:
Lieferzeit 7-14 Tag (e)
18+4.2 EUR
26+ 2.76 EUR
28+ 2.6 EUR
Mindestbestellmenge: 18
SUP40010EL-GE3 VISHAY sup40010el.pdf SUP40010EL-GE3 THT N channel transistors
Produkt ist nicht verfügbar
SUP40012EL-GE3 VISHAY sup40012el.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.36mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP50010E-GE3 VISHAY sup50010e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 212nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP50020E-GE3 VISHAY sup50020e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 120A; Idm: 300A
Mounting: THT
Pulsed drain current: 300A
Power dissipation: 375W
Gate charge: 128nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 2.7mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP50020EL-GE3 VISHAY sup50020el.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 120A; Idm: 300A
Mounting: THT
Pulsed drain current: 300A
Power dissipation: 375W
Gate charge: 126nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 2.8mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP53P06-20-E3 SUP53P06-20-E3 VISHAY sup53p06-20.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -46.8A; 66.7W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -46.8A
Power dissipation: 66.7W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 611 Stücke:
Lieferzeit 7-14 Tag (e)
24+3.1 EUR
26+ 2.79 EUR
36+ 2.03 EUR
38+ 1.92 EUR
Mindestbestellmenge: 24
SUP57N20-33-E3 SUP57N20-33-E3 VISHAY SUP57N20-33-E3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 931 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.59 EUR
32+ 2.25 EUR
34+ 2.13 EUR
Mindestbestellmenge: 20
SUP60020E-GE3 VISHAY sup60020e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP60030E-GE3 VISHAY sup60030e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 120A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 250A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70030E-GE3 VISHAY sup70030e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.84mΩ
Mounting: THT
Gate charge: 214nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70040E-GE3 VISHAY sup70040e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70042E-GE3 VISHAY sup70042e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 200A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70060E-GE3 VISHAY sup70060e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 131A
Pulsed drain current: 240A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70090E-GE3 VISHAY sup70090e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70101EL-GE3 VISHAY sup70101el.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP80090E-GE3 SUP80090E-GE3 VISHAY SUP80090E.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 125W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 74A
On-state resistance: 9.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Drain-source voltage: 150V
Gate charge: 63nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP85N10-10-E3 SUP85N10-10-E3 VISHAY SUP85N10-10.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 359 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.85 EUR
27+ 2.67 EUR
29+ 2.53 EUR
Mindestbestellmenge: 15
SUP85N10-10-GE3 VISHAY SUP%2CSUB85N10-10.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 85A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 85A
Pulsed drain current: 240A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 250 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.93 EUR
26+ 2.77 EUR
28+ 2.62 EUR
1000+ 2.53 EUR
Mindestbestellmenge: 19
SUP85N15-21-E3 VISHAY sup85n15.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 85A
Pulsed drain current: 180A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90100E-GE3 VISHAY sup90100e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Pulsed drain current: 250A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90140E-GE3 VISHAY sup90140e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Case: TO220AB
Mounting: THT
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 96nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Drain-source voltage: 200V
Drain current: 90A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90142E-GE3 VISHAY sup90142e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.9mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90220E-GE3 VISHAY sup90220e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 64A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 64A
Pulsed drain current: 100A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 23.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90330E-GE3 VISHAY sup90330e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90N06-6M0P-E3 VISHAY sup90n06.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 90A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 272W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90P06-09L-E3 SUP90P06-09L-E3 VISHAY SUP90P06-09L-E3.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -67A; 250W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -67A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 117 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.46 EUR
13+ 5.81 EUR
14+ 5.49 EUR
50+ 5.29 EUR
Mindestbestellmenge: 10
T1110P6-SD-F VISHAY T1110P6-SD-F.pdf Category: Photodiodes
Description: PIN IR photodiode; SMD; 940nm; 430÷1100nm; 60°; 65mW
Mounting: SMD
Wavelength: 430...1100nm
Viewing angle: 60°
Type of photoelement: PIN IR photodiode
Wavelength of peak sensitivity: 940nm
Active area: 7.5mm2
Dimensions: 2.97x2.97x0.28mm
Optical power: 65mW
Anzahl je Verpackung: 8000 Stücke
Produkt ist nicht verfügbar
T18104KT10 T18104KT10 VISHAY t18.pdf Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 100kΩ; 750mW; ±10%; linear
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 100kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)
27+2.72 EUR
35+ 2.06 EUR
44+ 1.64 EUR
46+ 1.56 EUR
Mindestbestellmenge: 27
T18101KT10 T18101KT10 VISHAY t18.pdf Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 100Ω; 750mW; ±10%; linear
Mounting: THT
Resistance: 100Ω
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Anzahl je Verpackung: 500 Stücke
Produkt ist nicht verfügbar
T18103KT10 T18103KT10 VISHAY t18.pdf Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 750mW; ±10%; linear
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 10kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 143 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.29 EUR
28+ 2.59 EUR
46+ 1.56 EUR
49+ 1.47 EUR
Mindestbestellmenge: 22
T18100KT10 T18100KT10 VISHAY t18.pdf Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10Ω; 750mW; ±10%; linear
Mounting: THT
Resistance: 10Ω
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 200ppm/°C
Min. insulation resistance: 1TΩ
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Anzahl je Verpackung: 1 Stücke
auf Bestellung 492 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.3 EUR
33+ 2.23 EUR
44+ 1.64 EUR
46+ 1.56 EUR
Mindestbestellmenge: 32
T18102KT10 T18102KT10 VISHAY t18.pdf Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1kΩ; 750mW; ±10%; linear
Mounting: THT
Operating temperature: -55...125°C
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Min. insulation resistance: 1TΩ
Power: 0.75W
Resistance: 1kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.96 EUR
38+ 1.92 EUR
47+ 1.53 EUR
50+ 1.44 EUR
500+ 1.39 EUR
Mindestbestellmenge: 37
T18105KT10 T18105KT10 VISHAY t18.pdf Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Mounting: THT
Resistance: 1MΩ
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 1 Stücke
auf Bestellung 364 Stücke:
Lieferzeit 7-14 Tag (e)
29+2.52 EUR
49+ 1.47 EUR
52+ 1.4 EUR
Mindestbestellmenge: 29
T18201KT10 T18201KT10 VISHAY t18.pdf Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 200Ω; 750mW; ±10%; linear
Mounting: THT
Resistance: 200Ω
Tolerance: ±10%
Power: 0.75W
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 1 Stücke
auf Bestellung 591 Stücke:
Lieferzeit 7-14 Tag (e)
33+2.2 EUR
34+ 2.14 EUR
44+ 1.66 EUR
46+ 1.56 EUR
500+ 1.52 EUR
Mindestbestellmenge: 33
T18203KT10 T18203KT10 VISHAY t18.pdf Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Mounting: THT
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 1 Stücke
auf Bestellung 253 Stücke:
Lieferzeit 7-14 Tag (e)
20+3.75 EUR
25+ 2.97 EUR
44+ 1.64 EUR
46+ 1.56 EUR
Mindestbestellmenge: 20
T18200KT10 T18200KT10 VISHAY t18.pdf Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20Ω; 750mW; ±10%; linear
Operating temperature: -55...125°C
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Mounting: THT
Min. insulation resistance: 1TΩ
Power: 0.75W
Resistance: 20Ω
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 500 Stücke
Produkt ist nicht verfügbar
T18202KT10 T18202KT10 VISHAY t18.pdf Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 750mW; ±10%; linear
Mounting: THT
Resistance: 2kΩ
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 1 Stücke
auf Bestellung 546 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.88 EUR
25+ 2.95 EUR
44+ 1.66 EUR
46+ 1.56 EUR
Mindestbestellmenge: 19
T18504KT10 T18504KT10 VISHAY t18.pdf Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500kΩ; 750mW; ±10%; linear
Engineering PN: 43P; 89; 3006
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 500kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 127 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.12 EUR
24+ 3 EUR
31+ 2.36 EUR
33+ 2.23 EUR
500+ 2.14 EUR
Mindestbestellmenge: 23
T18501KT10 T18501KT10 VISHAY t18.pdf Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500Ω; 750mW; ±10%; linear
Engineering PN: 43P; 89; 3006
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 500Ω
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUM60N10-17-E3 72070.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 100A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM65N20-30-E3 SUM65N20-30.pdf
SUM65N20-30-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 140A; 375W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Pulsed drain current: 140A
Power dissipation: 375W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUM70030E-GE3 sum70030e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.48mΩ
Mounting: SMD
Gate charge: 214nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70030M-GE3 sum70030m.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 214nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70040E-GE3 sum70040e.pdf
SUM70040E-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 125W; D2PAK,TO263
Drain-source voltage: 100V
Drain current: 120A
On-state resistance: 4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 76nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK; TO263
Anzahl je Verpackung: 1 Stücke
auf Bestellung 789 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+4.02 EUR
20+ 3.62 EUR
26+ 2.77 EUR
28+ 2.62 EUR
Mindestbestellmenge: 18
SUM70040M-GE3 sum70040m.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 375W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70042E-GE3 sum70042e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 200A
Power dissipation: 278W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70060E-GE3 sum70060e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 131A
Pulsed drain current: 240A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70090E-GE3 sum70090e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 120A
Power dissipation: 125W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM70101EL-GE3 sum70101el.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM80090E-GE3 sum80090e.pdf
SUM80090E-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 128A; Idm: 240A; 125W
Drain-source voltage: 150V
Drain current: 128A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Mounting: SMD
Case: D2PAK; TO263
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUM85N15-19-E3 71703.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 85A
Pulsed drain current: 180A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90100E-GE3 sum90100e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Pulsed drain current: 250A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 12.9mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90140E-GE3 sum90140e.pdf
SUM90140E-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 75A; 125W; D2PAK,TO263
Case: D2PAK; TO263
Mounting: SMD
Power dissipation: 125W
Polarisation: unipolar
Gate charge: 64nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 200V
Drain current: 75A
On-state resistance: 17mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUM90142E-GE3 sum90142e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Case: TO263
Mounting: SMD
Power dissipation: 375W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 87nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Drain-source voltage: 200V
Drain current: 90A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90220E-GE3 sum90220e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 64A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 64A
Pulsed drain current: 100A
Power dissipation: 230W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 23.5mΩ
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90330E-GE3 sum90330e.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90N03-2M2P-E3 sum90n03.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 90A
Pulsed drain current: 200A
Power dissipation: 250W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 257nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SUM90N10-8M2P-E3 sum90n10-8m2p.pdf
SUM90N10-8M2P-E3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 240A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 647 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.13 EUR
26+ 2.83 EUR
34+ 2.16 EUR
35+ 2.04 EUR
Mindestbestellmenge: 23
SUM90P10-19L-E3 sum90p10.pdf
Hersteller: VISHAY
SUM90P10-19L-E3 SMD P channel transistors
auf Bestellung 727 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
13+5.52 EUR
19+ 3.85 EUR
20+ 3.63 EUR
Mindestbestellmenge: 13
SUP10250E-GE3 sup10250e.pdf
Hersteller: VISHAY
SUP10250E-GE3 THT N channel transistors
auf Bestellung 474 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
18+4.2 EUR
26+ 2.76 EUR
28+ 2.6 EUR
Mindestbestellmenge: 18
SUP40010EL-GE3 sup40010el.pdf
Hersteller: VISHAY
SUP40010EL-GE3 THT N channel transistors
Produkt ist nicht verfügbar
SUP40012EL-GE3 sup40012el.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.36mΩ
Mounting: THT
Gate charge: 195nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP50010E-GE3 sup50010e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 212nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP50020E-GE3 sup50020e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 120A; Idm: 300A
Mounting: THT
Pulsed drain current: 300A
Power dissipation: 375W
Gate charge: 128nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 2.7mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP50020EL-GE3 sup50020el.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 120A; Idm: 300A
Mounting: THT
Pulsed drain current: 300A
Power dissipation: 375W
Gate charge: 126nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 120A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 2.8mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP53P06-20-E3 sup53p06-20.pdf
SUP53P06-20-E3
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -46.8A; 66.7W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -46.8A
Power dissipation: 66.7W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 611 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
24+3.1 EUR
26+ 2.79 EUR
36+ 2.03 EUR
38+ 1.92 EUR
Mindestbestellmenge: 24
SUP57N20-33-E3 SUP57N20-33-E3.pdf
SUP57N20-33-E3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 33A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 33A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 931 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.59 EUR
32+ 2.25 EUR
34+ 2.13 EUR
Mindestbestellmenge: 20
SUP60020E-GE3 sup60020e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: THT
Gate charge: 227nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP60030E-GE3 sup60030e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 120A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 250A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70030E-GE3 sup70030e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.84mΩ
Mounting: THT
Gate charge: 214nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70040E-GE3 sup70040e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70042E-GE3 sup70042e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 200A
Power dissipation: 278W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70060E-GE3 sup70060e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 131A
Pulsed drain current: 240A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70090E-GE3 sup70090e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 120A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP70101EL-GE3 sup70101el.pdf
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP80090E-GE3 SUP80090E.pdf
SUP80090E-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 74A; 125W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 74A
On-state resistance: 9.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Drain-source voltage: 150V
Gate charge: 63nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP85N10-10-E3 SUP85N10-10.pdf
SUP85N10-10-E3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 359 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.85 EUR
27+ 2.67 EUR
29+ 2.53 EUR
Mindestbestellmenge: 15
SUP85N10-10-GE3 SUP%2CSUB85N10-10.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 85A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 85A
Pulsed drain current: 240A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 250 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.93 EUR
26+ 2.77 EUR
28+ 2.62 EUR
1000+ 2.53 EUR
Mindestbestellmenge: 19
SUP85N15-21-E3 sup85n15.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 85A
Pulsed drain current: 180A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90100E-GE3 sup90100e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Pulsed drain current: 250A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 12.4mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90140E-GE3 sup90140e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Case: TO220AB
Mounting: THT
Power dissipation: 375W
Polarisation: unipolar
Kind of package: tube
Gate charge: 96nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 240A
Drain-source voltage: 200V
Drain current: 90A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90142E-GE3 sup90142e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.9mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90220E-GE3 sup90220e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 64A; Idm: 100A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 64A
Pulsed drain current: 100A
Power dissipation: 230W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 23.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90330E-GE3 sup90330e.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90N06-6M0P-E3 sup90n06.pdf
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 90A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 90A
Pulsed drain current: 240A
Power dissipation: 272W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SUP90P06-09L-E3 SUP90P06-09L-E3.pdf
SUP90P06-09L-E3
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -67A; 250W; TO220AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -67A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 117 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+7.46 EUR
13+ 5.81 EUR
14+ 5.49 EUR
50+ 5.29 EUR
Mindestbestellmenge: 10
T1110P6-SD-F T1110P6-SD-F.pdf
Hersteller: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; SMD; 940nm; 430÷1100nm; 60°; 65mW
Mounting: SMD
Wavelength: 430...1100nm
Viewing angle: 60°
Type of photoelement: PIN IR photodiode
Wavelength of peak sensitivity: 940nm
Active area: 7.5mm2
Dimensions: 2.97x2.97x0.28mm
Optical power: 65mW
Anzahl je Verpackung: 8000 Stücke
Produkt ist nicht verfügbar
T18104KT10 t18.pdf
T18104KT10
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 100kΩ; 750mW; ±10%; linear
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 100kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Mounting: THT
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
27+2.72 EUR
35+ 2.06 EUR
44+ 1.64 EUR
46+ 1.56 EUR
Mindestbestellmenge: 27
T18101KT10 t18.pdf
T18101KT10
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 100Ω; 750mW; ±10%; linear
Mounting: THT
Resistance: 100Ω
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Anzahl je Verpackung: 500 Stücke
Produkt ist nicht verfügbar
T18103KT10 t18.pdf
T18103KT10
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 750mW; ±10%; linear
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 10kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
Anzahl je Verpackung: 1 Stücke
auf Bestellung 143 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
22+3.29 EUR
28+ 2.59 EUR
46+ 1.56 EUR
49+ 1.47 EUR
Mindestbestellmenge: 22
T18100KT10 t18.pdf
T18100KT10
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10Ω; 750mW; ±10%; linear
Mounting: THT
Resistance: 10Ω
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 200ppm/°C
Min. insulation resistance: 1TΩ
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Anzahl je Verpackung: 1 Stücke
auf Bestellung 492 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
32+2.3 EUR
33+ 2.23 EUR
44+ 1.64 EUR
46+ 1.56 EUR
Mindestbestellmenge: 32
T18102KT10 t18.pdf
T18102KT10
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1kΩ; 750mW; ±10%; linear
Mounting: THT
Operating temperature: -55...125°C
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Min. insulation resistance: 1TΩ
Power: 0.75W
Resistance: 1kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
37+1.96 EUR
38+ 1.92 EUR
47+ 1.53 EUR
50+ 1.44 EUR
500+ 1.39 EUR
Mindestbestellmenge: 37
T18105KT10 t18.pdf
T18105KT10
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 1MΩ; 750mW; ±10%; linear
Mounting: THT
Resistance: 1MΩ
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 1 Stücke
auf Bestellung 364 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
29+2.52 EUR
49+ 1.47 EUR
52+ 1.4 EUR
Mindestbestellmenge: 29
T18201KT10 t18.pdf
T18201KT10
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 200Ω; 750mW; ±10%; linear
Mounting: THT
Resistance: 200Ω
Tolerance: ±10%
Power: 0.75W
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 1 Stücke
auf Bestellung 591 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
33+2.2 EUR
34+ 2.14 EUR
44+ 1.66 EUR
46+ 1.56 EUR
500+ 1.52 EUR
Mindestbestellmenge: 33
T18203KT10 t18.pdf
T18203KT10
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20kΩ; 750mW; ±10%; linear
Mounting: THT
Resistance: 20kΩ
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 1 Stücke
auf Bestellung 253 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+3.75 EUR
25+ 2.97 EUR
44+ 1.64 EUR
46+ 1.56 EUR
Mindestbestellmenge: 20
T18200KT10 t18.pdf
T18200KT10
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 20Ω; 750mW; ±10%; linear
Operating temperature: -55...125°C
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Mounting: THT
Min. insulation resistance: 1TΩ
Power: 0.75W
Resistance: 20Ω
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 500 Stücke
Produkt ist nicht verfügbar
T18202KT10 t18.pdf
T18202KT10
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 2kΩ; 750mW; ±10%; linear
Mounting: THT
Resistance: 2kΩ
Power: 0.75W
Tolerance: ±10%
Operating temperature: -55...125°C
Temperature coefficient: 100ppm/°C
Min. insulation resistance: 1TΩ
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Anzahl je Verpackung: 1 Stücke
auf Bestellung 546 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.88 EUR
25+ 2.95 EUR
44+ 1.66 EUR
46+ 1.56 EUR
Mindestbestellmenge: 19
T18504KT10 t18.pdf
T18504KT10
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500kΩ; 750mW; ±10%; linear
Engineering PN: 43P; 89; 3006
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 500kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 127 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.12 EUR
24+ 3 EUR
31+ 2.36 EUR
33+ 2.23 EUR
500+ 2.14 EUR
Mindestbestellmenge: 23
T18501KT10 t18.pdf
T18501KT10
Hersteller: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500Ω; 750mW; ±10%; linear
Engineering PN: 43P; 89; 3006
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Mounting: THT
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 500Ω
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Potentiometer standard: 19mm
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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