SUP85N10-10-E3 VISHAY
Hersteller: VISHAYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 19+ | 3.86 EUR |
| 21+ | 3.46 EUR |
| 27+ | 2.66 EUR |
| 29+ | 2.52 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SUP85N10-10-E3 VISHAY
Description: MOSFET N-CH 100V 85A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V, Power Dissipation (Max): 3.75W (Ta), 250W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V.
Weitere Produktangebote SUP85N10-10-E3 nach Preis ab 2.52 EUR bis 10.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SUP85N10-10-E3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 10.5mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 359 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
 |
SUP85N10-10-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
SUP85N10-10-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 201 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
SUP85N10-10-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 85A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6550 pF @ 25 V |
auf Bestellung 380 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SUP85N10-10-E3 | Hersteller : Vishay Semiconductors |
MOSFET 100V N-CH 175 DEG.C |
auf Bestellung 943 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
SUP85N10-10-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 201 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
|
|
SUP85N10-10-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
SUP85N10-10-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 85A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |