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SUP50010E-GE3 Vishay Semiconductors
auf Bestellung 1165 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.28 EUR |
10+ | 4.45 EUR |
25+ | 4.31 EUR |
100+ | 3.61 EUR |
250+ | 3.4 EUR |
500+ | 3.24 EUR |
1000+ | 2.71 EUR |
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Technische Details SUP50010E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 60V 150A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V.
Weitere Produktangebote SUP50010E-GE3 nach Preis ab 3.65 EUR bis 5.39 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SUP50010E-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V |
auf Bestellung 184 Stücke: Lieferzeit 10-14 Tag (e) |
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SUP50010E-GE3 | Hersteller : Vishay |
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auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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SUP50010E-GE3 | Hersteller : Vishay |
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auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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SUP50010E-GE3 Produktcode: 191652 |
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SUP50010E-GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SUP50010E-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Gate charge: 212nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP50010E-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: THT Gate charge: 212nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |