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SUP40012EL-GE3 Vishay Siliconix
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Description: MOSFET N-CH 40V 150A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.79mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10930 pF @ 20 V
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.66 EUR |
50+ | 2.94 EUR |
100+ | 2.42 EUR |
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Technische Details SUP40012EL-GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 150A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 1.79mOhm @ 30A, 10V, Power Dissipation (Max): 150W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10930 pF @ 20 V.
Weitere Produktangebote SUP40012EL-GE3 nach Preis ab 1.69 EUR bis 3.68 EUR
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SUP40012EL-GE3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 327 Stücke: Lieferzeit 10-14 Tag (e) |
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SUP40012EL-GE3 | Hersteller : Vishay |
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SUP40012EL-GE3 | Hersteller : Vishay |
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SUP40012EL-GE3 | Hersteller : Vishay |
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SUP40012EL-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 150A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 300A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.36mΩ Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SUP40012EL-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 150A; Idm: 300A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 150A Pulsed drain current: 300A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 2.36mΩ Mounting: THT Gate charge: 195nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |