Technische Details SUM90100E-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A, Type of transistor: N-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 150A, Pulsed drain current: 250A, Power dissipation: 375W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 12.9mΩ, Mounting: SMD, Gate charge: 110nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 800 Stücke.
Weitere Produktangebote SUM90100E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| SUM90100E-GE3 | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 150A Pulsed drain current: 250A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12.9mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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SUM90100E-GE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 200-V (D-S) MOSFET D2P |
Produkt ist nicht verfügbar |
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| SUM90100E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 150A; Idm: 250A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 150A Pulsed drain current: 250A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 12.9mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |