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SIS862ADN-T1-GE3 VISHAY sis862adn.pdf SIS862ADN-T1-GE3 SMD N channel transistors
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SIS862DN-T1-GE3 VISHAY sis862dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIS888DN-T1-GE3 VISHAY sis888dn.pdf SIS888DN-T1-GE3 SMD N channel transistors
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SIS890ADN-T1-GE3 VISHAY sis890adn.pdf SIS890ADN-T1-GE3 SMD N channel transistors
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SIS890DN-T1-GE3 VISHAY sis890dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 60A; 33W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 30A
On-state resistance: 23.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIS892ADN-T1-GE3 VISHAY SIS892ADN-T1-GE3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; 52W; PowerPAK® 1212-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIS892DN-T1-GE3 VISHAY sis892dn.pdf SIS892DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIS903DN-T1-GE3 VISHAY sis903dn.pdf SIS903DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SIS932EDN-T1-GE3 VISHAY sis932edn.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 40A
Gate charge: 14nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 40A
Case: PowerPAK® 1212-8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 14.8W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIS990DN-T1-GE3 VISHAY sis990dn.pdf SIS990DN-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SISA01DN-T1-GE3 VISHAY sisa01dn.pdf SISA01DN-T1-GE3 SMD P channel transistors
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SISA04DN-T1-GE3 VISHAY sisa04dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 43W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISA10DN-T1-GE3 VISHAY sisa10dn.pdf SISA10DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SISA12ADN-T1-GE3 VISHAY sisa12adn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 80A; 18W
Mounting: SMD
Case: PowerPAK® 1212-8
Drain current: 25A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 45nC
Kind of channel: enhanced
Pulsed drain current: 80A
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISA14BDN-T1-GE3 VISHAY doc?63185 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 58A; Idm: 130A; 29W
Mounting: SMD
Technology: TrenchFET®
Power dissipation: 29W
Pulsed drain current: 130A
Gate-source voltage: ±20/±-16V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 58A
On-state resistance: 7.02mΩ
Gate charge: 22nC
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar
SISA14DN-T1-GE3 VISHAY sisa14dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 80A; 17W
Mounting: SMD
Technology: TrenchFET®
Power dissipation: 17W
Pulsed drain current: 80A
Gate-source voltage: ±20/±-16V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 8.5mΩ
Gate charge: 29nC
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar
SISA18ADN-T1-GE3 VISHAY sisa18adn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30.6A; Idm: 70A
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 70A
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 30.6A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 12.7W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISA24DN-T1-GE3 VISHAY sisa24dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 150A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20/±-16V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISA35DN-T1-GE3 VISHAY sisa35dn.pdf SISA35DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SISA40DN-T1-GE3 VISHAY sisa40dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 129A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 129A
Pulsed drain current: 150A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: -8...12V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISA72ADN-T1-GE3 VISHAY sisa72adn.pdf SISA72ADN-T1-GE3 SMD N channel transistors
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SISA72DN-T1-GE3 VISHAY sisa72dn.pdf SISA72DN-T1-GE3 SMD N channel transistors
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SISA88DN-T1-GE3 VISHAY SISA88DN_Rev.A_Oct02,2017_DS.pdf SISA88DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SiSA96DN-T1-GE3 VISHAY sisa96dn.pdf SISA96DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SISB46DN-T1-GE3 VISHAY sisb46dn.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 27.3A; Idm: 70A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.3A
Pulsed drain current: 70A
Power dissipation: 14.8W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 15.8mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISC06DN-T1-GE3 VISHAY sisc06dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 40A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 29.6W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISF00DN-T1-GE3 VISHAY sisf00dn.pdf SISF00DN-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SISF02DN-T1-GE3 VISHAY sisf02dn.pdf SISF02DN-T1-GE3 Multi channel transistors
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SISF06DN-T1-GE3 VISHAY Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 81A; Idm: 190A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 81A
Pulsed drain current: 190A
Power dissipation: 44.4W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 6.95mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISF20DN-T1-GE3 VISHAY sisf20dn.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Pulsed drain current: 100A
Power dissipation: 44.4W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH101DN-T1-GE3 VISHAY sish101dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH106DN-T1-GE3 VISHAY sish106dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 15.6A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH108DN-T1-GE3 VISHAY sish108dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 17.6A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH110DN-T1-GE3 VISHAY sish110dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16.9A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16.9A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SISH112DN-T1-GE3 VISHAY sish112dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.2A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SISH114ADN-T1-GE3 VISHAY sish114ad.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 25W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 60A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH116DN-T1-GE3 VISHAY sish116dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 23nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 40V
Drain current: 13.1A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH129DN-T1-GE3 VISHAY sish129dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Pulsed drain current: -60A
Power dissipation: 33.3W
Gate charge: 71nC
Polarisation: unipolar
Drain current: -35A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH402DN-T1-GE3 VISHAY sish402dn.pdf SISH402DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SISH407DN-T1-GE3 VISHAY sish407dn.pdf SISH407DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SISH410DN-T1-GE3 VISHAY sish410dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W
Mounting: SMD
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH434DN-T1-GE3 VISHAY sish434dn.pdf SISH434DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SISH472DN-T1-GE3 VISHAY sish472dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Gate charge: 30nC
Mounting: SMD
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH536DN-T1-GE3 VISHAY sish536dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 54A; Idm: 200A; 17W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 54A
Pulsed drain current: 200A
Power dissipation: 17W
Case: PowerPAK® 1212-8
Gate-source voltage: -12...16V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH615ADN-T1-GE3 VISHAY sish615adn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Mounting: SMD
Kind of package: reel; tape
Gate charge: 183nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -35A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Case: PowerPAK® 1212-8
On-state resistance: 9.8mΩ
Pulsed drain current: -80A
Power dissipation: 33W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH617DN-T1-GE3 VISHAY sish617dn.pdf SISH617DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SISH625DN-T1-GE3 VISHAY sish625dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH892BDN-T1-GE3 VISHAY sish892bdn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16A; Idm: 40A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Power dissipation: 18.6W
Polarisation: unipolar
Gate charge: 26.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
Drain current: 16A
On-state resistance: 34.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISHA04DN-T1-GE3 VISHAY sisha04dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 43W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISHA10DN-T1-GE3 VISHAY SISHA10DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SISHA12ADN-T1-GE3 VISHAY sisha12adn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 80A; 18W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 80A
Power dissipation: 18W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISHA14DN-T1-GE3 VISHAY sisha14dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 80A; 17W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 17W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISS02DN-T1-GE3 VISHAY siss02dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 80A; Idm: 300A; 42W
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 42W
Pulsed drain current: 300A
Gate charge: 83nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: -12...16V
On-state resistance: 1.83mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISS04DN-T1-GE3 VISHAY siss04dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 80A; Idm: 300A; 42W
Mounting: SMD
Case: PowerPAK® 1212-8
Drain current: 80A
On-state resistance: 1.85mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 93nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -12...16V
Pulsed drain current: 300A
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISS05DN-T1-GE3 SISS05DN-T1-GE3 VISHAY siss05dn.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -86.6A; Idm: -300A; 42W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 5.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Drain current: -86.6A
Drain-source voltage: -30V
Gate charge: 115nC
Case: PowerPAK® 1212-8
Kind of channel: enhanced
Gate-source voltage: -20...16V
Pulsed drain current: -300A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2765 Stücke:
Lieferzeit 7-14 Tag (e)
46+1.56 EUR
52+ 1.39 EUR
60+ 1.2 EUR
64+ 1.13 EUR
500+ 1.09 EUR
Mindestbestellmenge: 46
SISS06DN-T1-GE3 VISHAY siss06dn.pdf SISS06DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SISS08DN-T1-GE3 VISHAY siss08dn.pdf SISS08DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SISS10ADN-T1-GE3 VISHAY siss10adn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 86.8A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86.8A
Pulsed drain current: 150A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.95mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISS10DN-T1-GE3 VISHAY siss10dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 36W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISS12DN-T1-GE3 VISHAY siss12dn.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 200A; 42W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 200A
Case: PowerPAK® 1212-8
Drain-source voltage: 40V
Drain current: 60A
On-state resistance: 2.74mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 89nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIS862ADN-T1-GE3 sis862adn.pdf
Hersteller: VISHAY
SIS862ADN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIS862DN-T1-GE3 sis862dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Mounting: SMD
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIS888DN-T1-GE3 sis888dn.pdf
Hersteller: VISHAY
SIS888DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIS890ADN-T1-GE3 sis890adn.pdf
Hersteller: VISHAY
SIS890ADN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIS890DN-T1-GE3 sis890dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 60A; 33W
Mounting: SMD
Drain-source voltage: 100V
Drain current: 30A
On-state resistance: 23.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SIS892ADN-T1-GE3 SIS892ADN-T1-GE3.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; 52W; PowerPAK® 1212-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 52W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 6.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIS892DN-T1-GE3 sis892dn.pdf
Hersteller: VISHAY
SIS892DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SIS903DN-T1-GE3 sis903dn.pdf
Hersteller: VISHAY
SIS903DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SIS932EDN-T1-GE3 sis932edn.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 6A; Idm: 40A
Gate charge: 14nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 40A
Case: PowerPAK® 1212-8
Mounting: SMD
Drain-source voltage: 30V
Drain current: 6A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 14.8W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SIS990DN-T1-GE3 sis990dn.pdf
Hersteller: VISHAY
SIS990DN-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SISA01DN-T1-GE3 sisa01dn.pdf
Hersteller: VISHAY
SISA01DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SISA04DN-T1-GE3 sisa04dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 43W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISA10DN-T1-GE3 sisa10dn.pdf
Hersteller: VISHAY
SISA10DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SISA12ADN-T1-GE3 sisa12adn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25A; Idm: 80A; 18W
Mounting: SMD
Case: PowerPAK® 1212-8
Drain current: 25A
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 45nC
Kind of channel: enhanced
Pulsed drain current: 80A
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISA14BDN-T1-GE3 doc?63185
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 58A; Idm: 130A; 29W
Mounting: SMD
Technology: TrenchFET®
Power dissipation: 29W
Pulsed drain current: 130A
Gate-source voltage: ±20/±-16V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 58A
On-state resistance: 7.02mΩ
Gate charge: 22nC
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar
SISA14DN-T1-GE3 sisa14dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 80A; 17W
Mounting: SMD
Technology: TrenchFET®
Power dissipation: 17W
Pulsed drain current: 80A
Gate-source voltage: ±20/±-16V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 8.5mΩ
Gate charge: 29nC
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhanced
Produkt ist nicht verfügbar
SISA18ADN-T1-GE3 sisa18adn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30.6A; Idm: 70A
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 21.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Pulsed drain current: 70A
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 30V
Drain current: 30.6A
On-state resistance: 12mΩ
Type of transistor: N-MOSFET
Power dissipation: 12.7W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISA24DN-T1-GE3 sisa24dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 60A; Idm: 150A; 33W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20/±-16V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISA35DN-T1-GE3 sisa35dn.pdf
Hersteller: VISHAY
SISA35DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SISA40DN-T1-GE3 sisa40dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 129A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 129A
Pulsed drain current: 150A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: -8...12V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISA72ADN-T1-GE3 sisa72adn.pdf
Hersteller: VISHAY
SISA72ADN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SISA72DN-T1-GE3 sisa72dn.pdf
Hersteller: VISHAY
SISA72DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SISA88DN-T1-GE3 SISA88DN_Rev.A_Oct02,2017_DS.pdf
Hersteller: VISHAY
SISA88DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SiSA96DN-T1-GE3 sisa96dn.pdf
Hersteller: VISHAY
SISA96DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SISB46DN-T1-GE3 sisb46dn.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 27.3A; Idm: 70A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.3A
Pulsed drain current: 70A
Power dissipation: 14.8W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 15.8mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISC06DN-T1-GE3 sisc06dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET + Schottky; TrenchFET®; unipolar; 30V; 40A
Type of transistor: N-MOSFET + Schottky
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 100A
Power dissipation: 29.6W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISF00DN-T1-GE3 sisf00dn.pdf
Hersteller: VISHAY
SISF00DN-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SISF02DN-T1-GE3 sisf02dn.pdf
Hersteller: VISHAY
SISF02DN-T1-GE3 Multi channel transistors
Produkt ist nicht verfügbar
SISF06DN-T1-GE3
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 81A; Idm: 190A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 81A
Pulsed drain current: 190A
Power dissipation: 44.4W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 6.95mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISF20DN-T1-GE3 sisf20dn.pdf
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 41A; Idm: 100A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Pulsed drain current: 100A
Power dissipation: 44.4W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 18.5mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH101DN-T1-GE3 sish101dn.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±25V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 102nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH106DN-T1-GE3 sish106dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 15.6A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 15.6A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH108DN-T1-GE3 sish108dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 17.6A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±16V
On-state resistance: 6.1mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH110DN-T1-GE3 sish110dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 16.9A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 16.9A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SISH112DN-T1-GE3 sish112dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14.2A; Idm: 60A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.2A
Pulsed drain current: 60A
Power dissipation: 2W
Case: PowerPAK® 1212-8
Gate-source voltage: ±12V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
SISH114ADN-T1-GE3 sish114ad.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 25W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 35A
Pulsed drain current: 60A
Power dissipation: 25W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH116DN-T1-GE3 sish116dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 13.1A; Idm: 60A; 2W
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 23nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Drain-source voltage: 40V
Drain current: 13.1A
On-state resistance: 10mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH129DN-T1-GE3 sish129dn.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -60A
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Pulsed drain current: -60A
Power dissipation: 33.3W
Gate charge: 71nC
Polarisation: unipolar
Drain current: -35A
Kind of channel: enhanced
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH402DN-T1-GE3 sish402dn.pdf
Hersteller: VISHAY
SISH402DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SISH407DN-T1-GE3 sish407dn.pdf
Hersteller: VISHAY
SISH407DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SISH410DN-T1-GE3 sish410dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35A; Idm: 60A; 33W
Mounting: SMD
Drain-source voltage: 20V
Drain current: 35A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 33W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 41nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 60A
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH434DN-T1-GE3 sish434dn.pdf
Hersteller: VISHAY
SISH434DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SISH472DN-T1-GE3 sish472dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 50A; 18W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 20A
On-state resistance: 12.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 18W
Polarisation: unipolar
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 50A
Gate charge: 30nC
Mounting: SMD
Case: PowerPAK® 1212-8
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH536DN-T1-GE3 sish536dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 54A; Idm: 200A; 17W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 54A
Pulsed drain current: 200A
Power dissipation: 17W
Case: PowerPAK® 1212-8
Gate-source voltage: -12...16V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH615ADN-T1-GE3 sish615adn.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -35A; Idm: -80A
Mounting: SMD
Kind of package: reel; tape
Gate charge: 183nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: -35A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Case: PowerPAK® 1212-8
On-state resistance: 9.8mΩ
Pulsed drain current: -80A
Power dissipation: 33W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH617DN-T1-GE3 sish617dn.pdf
Hersteller: VISHAY
SISH617DN-T1-GE3 SMD P channel transistors
Produkt ist nicht verfügbar
SISH625DN-T1-GE3 sish625dn.pdf
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -35A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Pulsed drain current: -80A
Power dissipation: 33W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISH892BDN-T1-GE3 sish892bdn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 16A; Idm: 40A
Case: PowerPAK® SO8
Mounting: SMD
Kind of package: reel; tape
Technology: TrenchFET®
Power dissipation: 18.6W
Polarisation: unipolar
Gate charge: 26.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 100V
Drain current: 16A
On-state resistance: 34.7mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISHA04DN-T1-GE3 sisha04dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 40A; Idm: 80A; 43W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 80A
Power dissipation: 43W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISHA10DN-T1-GE3
Hersteller: VISHAY
SISHA10DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SISHA12ADN-T1-GE3 sisha12adn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25A; Idm: 80A; 18W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25A
Pulsed drain current: 80A
Power dissipation: 18W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISHA14DN-T1-GE3 sisha14dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 20A; Idm: 80A; 17W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 17W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISS02DN-T1-GE3 siss02dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 80A; Idm: 300A; 42W
Technology: TrenchFET®
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Power dissipation: 42W
Pulsed drain current: 300A
Gate charge: 83nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhanced
Drain-source voltage: 25V
Type of transistor: N-MOSFET
Gate-source voltage: -12...16V
On-state resistance: 1.83mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISS04DN-T1-GE3 siss04dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 80A; Idm: 300A; 42W
Mounting: SMD
Case: PowerPAK® 1212-8
Drain current: 80A
On-state resistance: 1.85mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 93nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -12...16V
Pulsed drain current: 300A
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISS05DN-T1-GE3 siss05dn.pdf
SISS05DN-T1-GE3
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -86.6A; Idm: -300A; 42W
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 5.8mΩ
Type of transistor: P-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Drain current: -86.6A
Drain-source voltage: -30V
Gate charge: 115nC
Case: PowerPAK® 1212-8
Kind of channel: enhanced
Gate-source voltage: -20...16V
Pulsed drain current: -300A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2765 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
46+1.56 EUR
52+ 1.39 EUR
60+ 1.2 EUR
64+ 1.13 EUR
500+ 1.09 EUR
Mindestbestellmenge: 46
SISS06DN-T1-GE3 siss06dn.pdf
Hersteller: VISHAY
SISS06DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SISS08DN-T1-GE3 siss08dn.pdf
Hersteller: VISHAY
SISS08DN-T1-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
SISS10ADN-T1-GE3 siss10adn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 86.8A; Idm: 150A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 86.8A
Pulsed drain current: 150A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.95mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISS10DN-T1-GE3 siss10dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 150A; 36W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 150A
Power dissipation: 36W
Case: PowerPAK® 1212-8
Gate-source voltage: -16...20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
SISS12DN-T1-GE3 siss12dn.pdf
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 60A; Idm: 200A; 42W
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 200A
Case: PowerPAK® 1212-8
Drain-source voltage: 40V
Drain current: 60A
On-state resistance: 2.74mΩ
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 89nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: -16...20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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