![SQSA84CENW-T1_GE3 SQSA84CENW-T1_GE3](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/4548/MFG_PowerPAK-1212-8W-Single_Top.jpg)
SQSA84CENW-T1_GE3 Vishay Siliconix
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Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 3.5A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8W
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.38 EUR |
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Technische Details SQSA84CENW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8W, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 3.5A, 10V, Power Dissipation (Max): 27W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8W, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V.
Weitere Produktangebote SQSA84CENW-T1_GE3 nach Preis ab 0.36 EUR bis 1 EUR
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SQSA84CENW-T1_GE3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 22786 Stücke: Lieferzeit 10-14 Tag (e) |
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SQSA84CENW-T1_GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8W Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 3.5A, 10V Power Dissipation (Max): 27W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8W Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SQSA84CENW-T1_GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 16A; Idm: 54A; 27W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 16A Pulsed drain current: 54A Power dissipation: 27W Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SQSA84CENW-T1_GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 16A; Idm: 54A; 27W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 16A Pulsed drain current: 54A Power dissipation: 27W Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |