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SQ4940AEY-T1_GE3 VISHAY
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Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A
Kind of package: reel; tape
Application: automotive industry
Drain current: 5.3A
On-state resistance: 29mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 43nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 32A
Mounting: SMD
Case: SO8
Drain-source voltage: 40V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 450 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
61+ | 1.17 EUR |
69+ | 1.05 EUR |
82+ | 0.87 EUR |
87+ | 0.83 EUR |
500+ | 0.81 EUR |
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Technische Details SQ4940AEY-T1_GE3 VISHAY
Description: MOSFET 2N-CH 40V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V, Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote SQ4940AEY-T1_GE3 nach Preis ab 0.6 EUR bis 2.01 EUR
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SQ4940AEY-T1_GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A Kind of package: reel; tape Application: automotive industry Drain current: 5.3A On-state resistance: 29mΩ Type of transistor: N-MOSFET x2 Power dissipation: 1.3W Polarisation: unipolar Gate charge: 43nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 32A Mounting: SMD Case: SO8 Drain-source voltage: 40V |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ4940AEY-T1_GE3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 20985 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4940AEY-T1_GE3 | Hersteller : Vishay |
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auf Bestellung 1398 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ4940AEY-T1_GE3 | Hersteller : Vishay |
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auf Bestellung 1398 Stücke: Lieferzeit 14-21 Tag (e) |
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SQ4940AEY-T1_GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 4841 Stücke: Lieferzeit 10-14 Tag (e) |
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SQ4940AEY-T1_GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SQ4940AEY-T1_GE3 | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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SQ4940AEY-T1_GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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SQ4940AEY-T1-GE3 | Hersteller : Vishay Siliconix |
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Produkt ist nicht verfügbar |