| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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TLP3083(F(O | TOSHIBA |
 Category: OptotriacsDescription: Optotriac; 5kV; DIP6; Ch: 1 Type of optocoupler: optotriac Insulation voltage: 5kV Case: DIP6 Max. off-state voltage: 0.8kV Trigger current: 5mA Mounting: THT Number of channels: 1 |
Produkt ist nicht verfügbar |
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TLP3083(TP5.F(O | TOSHIBA |
Category: Optotriacs Description: Optotriac; 5kV; DIP6; Ch: 1 Type of optocoupler: optotriac Insulation voltage: 5kV Case: DIP6 Max. off-state voltage: 0.8kV Trigger current: 5mA Mounting: THT Number of channels: 1 |
Produkt ist nicht verfügbar |
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TLP3083F(D4.F(O | TOSHIBA |
Category: Optotriacs Description: Optotriac; 5kV; DIP6; Ch: 1 Type of optocoupler: optotriac Insulation voltage: 5kV Case: DIP6 Max. off-state voltage: 0.8kV Trigger current: 5mA Mounting: THT Number of channels: 1 |
Produkt ist nicht verfügbar |
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TLP3083(D4.TP5.F(O | TOSHIBA |
Category: Optotriacs Description: Optotriac; 5kV; Uout: 800V; zero voltage crossing driver; SO6 Type of optocoupler: optotriac Mounting: SMD Number of channels: 1 Kind of output: zero voltage crossing driver Insulation voltage: 5kV Case: SO6 Max. off-state voltage: 5V Trigger current: 5mA Output voltage: 800V |
auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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TCR3UG12A,LF(S | TOSHIBA |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; WCSP4F; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.66V Output voltage: 1.2V Output current: 0.3A Case: WCSP4F Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: 1 Input voltage: 1.5...5.5V |
Produkt ist nicht verfügbar |
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| TBD62004AFWG,EL | TOSHIBA |
Category: Drivers - integrated circuits Description: IC: driver; transistor array; PSOP16; 0.5A; 2÷50V; Ch: 7; Uin: 0÷25V Type of integrated circuit: driver Kind of integrated circuit: transistor array Case: PSOP16 Output current: 0.5A Output voltage: 2...50V Number of channels: 7 Mounting: SMD Operating temperature: -40...85°C Application: for inductive load Input voltage: 0...25V |
Produkt ist nicht verfügbar |
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TTC004B,Q(S | TOSHIBA |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 1.5A; 1.5W; TO126 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1.5A Power dissipation: 1.5W Case: TO126 Current gain: 80...280 Mounting: THT Kind of package: bulk Frequency: 100MHz |
auf Bestellung 3984 Stücke: Lieferzeit 14-21 Tag (e) |
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RN1402(TE85L,F) | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 10kΩ Mounting: SMD Case: SC59 Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 50 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
Produkt ist nicht verfügbar |
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TLP2451A(TP,F) | TOSHIBA |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; Uinsul: 3.75kV; SO8 Mounting: SMD Number of channels: 1 Case: SO8 Slew rate: 20kV/μs Type of optocoupler: optocoupler Max. off-state voltage: 5V Turn-on time: 50ns Turn-off time: 50ns Kind of output: totem pole Insulation voltage: 3.75kV |
Produkt ist nicht verfügbar |
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VFNC3S-2007PL | TOSHIBA |
Category: One Phase Inverters Description: Inverter; Max motor power: 0.75kW; Usup: 200÷240VAC; Display: LED Type of module: Inverter Max motor power: 0.75kW Inverter output voltage: 3 x 230V AC Input 1 properties: 2 inputs for setting motor rotational speed by signals 0...10V, 4...20mA, 0...20mA or by means of the external potentiometer The programming method: keypad and potentiometer Electrical connection: screw terminals Additional functions: dynamic braking control; locked by password; PID regulator; programmable relay NO output; PWM; RS485/422 (max 115kB/s) Protection: anti-overvoltage OVP; maxiumum frequency overrun Kind of display used: LED Body dimensions: 72x130x131mm Current output: 4...20mA Manufacturer series: VFNC3S Supply voltage: 200...240V AC Voltage output: 0...10V |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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VFNC3S-2015PL | TOSHIBA |
Category: One Phase Inverters Description: Inverter; Max motor power: 1.5kW; Usup: 200÷240VAC; Display: LED Type of module: Inverter Max motor power: 1.5kW Inverter output voltage: 3 x 230V AC Input 1 properties: 2 inputs for setting motor rotational speed by signals 0...10V, 4...20mA, 0...20mA or by means of the external potentiometer The programming method: keypad and potentiometer Electrical connection: screw terminals Additional functions: dynamic braking control; locked by password; PID regulator; programmable relay NO output; PWM; RS485/422 (max 115kB/s) Protection: anti-overvoltage OVP; maxiumum frequency overrun Kind of display used: LED Body dimensions: 105x130x156mm Current output: 4...20mA Manufacturer series: VFNC3S Supply voltage: 200...240V AC Voltage output: 0...10V |
Produkt ist nicht verfügbar |
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VFNC3S-2022PL | TOSHIBA |
Category: One Phase Inverters Description: Inverter; Max motor power: 2.2kW; Usup: 200÷240VAC; Display: LED Type of module: Inverter Max motor power: 2.2kW Inverter output voltage: 3 x 230V AC Input 1 properties: 2 inputs for setting motor rotational speed by signals 0...10V, 4...20mA, 0...20mA or by means of the external potentiometer The programming method: keypad and potentiometer Electrical connection: screw terminals Additional functions: dynamic braking control; locked by password; PID regulator; programmable relay NO output; PWM; RS485/422 (max 115kB/s) Protection: anti-overvoltage OVP; maxiumum frequency overrun Kind of display used: LED Body dimensions: 105x130x156mm Current output: 4...20mA Manufacturer series: VFNC3S Supply voltage: 200...240V AC Voltage output: 0...10V |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM6N35FE,LM(T | TOSHIBA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.18A; 150mW; SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.18A Power dissipation: 0.15W Case: SOT563 Gate-source voltage: ±10V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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TDTA114E,LM(T | TOSHIBA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: PNP Power dissipation: 0.32W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
Produkt ist nicht verfügbar |
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| TC75S57F(TE85L,F) | TOSHIBA |
Category: SMD comparators Description: IC: comparator; universal; Cmp: 1; 1.8÷7V; SMT; SMV; reel,tape; 1pA Type of integrated circuit: comparator Mounting: SMT Case: SMV Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: push-pull Number of comparators: 1 Input offset voltage: 7mV Kind of comparator: universal Input offset current: 1pA Operating voltage: 1.8...7V |
Produkt ist nicht verfügbar |
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| TPH3R003PL,LQ(S | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 134A; Idm: 200A; 90W; SOP8 Mounting: SMD Case: SOP8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 134A On-state resistance: 4.2mΩ Type of transistor: N-MOSFET Power dissipation: 90W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 200A |
Produkt ist nicht verfügbar |
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| TPH6R003NL,LQ(S | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 57A; Idm: 117A; 34W; SOP8 Mounting: SMD Case: SOP8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 57A On-state resistance: 8.3mΩ Type of transistor: N-MOSFET Power dissipation: 34W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 117A |
Produkt ist nicht verfügbar |
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| TPN6R003NL,LQ(S | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 56A; Idm: 116A; 32W; TSON8 Mounting: SMD Case: TSON8 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 56A On-state resistance: 8.3mΩ Type of transistor: N-MOSFET Power dissipation: 32W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 116A |
Produkt ist nicht verfügbar |
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1SS193(TE85L,F) | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT346; Ufmax: 1.2V; Ifsm: 2A Power dissipation: 0.15W Case: SOT346 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 85V Features of semiconductor devices: ultrafast switching Reverse recovery time: 4ns Max. load current: 0.3A Type of diode: switching Max. forward voltage: 1.2V Load current: 0.1A Capacitance: 3pF Max. forward impulse current: 2A |
Produkt ist nicht verfügbar |
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| 1SS250(TE85L,F) | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 100mA; 60ns; SOT346; Ufmax: 1.2V; 150mW Power dissipation: 0.15W Case: SOT346 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 250V Features of semiconductor devices: fast switching Reverse recovery time: 60ns Max. load current: 0.3A Type of diode: switching Max. forward voltage: 1.2V Load current: 0.1A Capacitance: 3pF Max. forward impulse current: 2A |
Produkt ist nicht verfügbar |
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1SS300(TE85L,F) | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT323; Ufmax: 1.2V; Ifsm: 2A Power dissipation: 0.1W Case: SOT323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common anode; double Max. off-state voltage: 85V Features of semiconductor devices: ultrafast switching Reverse recovery time: 4ns Max. load current: 0.3A Type of diode: switching Max. forward voltage: 1.2V Load current: 0.1A Capacitance: 4pF Max. forward impulse current: 2A |
Produkt ist nicht verfügbar |
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1SS307E,L3F(T | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 100mA; SOD523; Ufmax: 1.3V; Ifsm: 1A Power dissipation: 0.15W Case: SOD523 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 85V Max. load current: 0.3A Type of diode: switching Max. forward voltage: 1.3V Load current: 0.1A Capacitance: 6pF Max. forward impulse current: 1A |
Produkt ist nicht verfügbar |
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1SS370(TE85L,F) | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 100mA; 60ns; SOT323; Ufmax: 1.2V; 100mW Power dissipation: 0.1W Case: SOT323 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 250V Features of semiconductor devices: fast switching Reverse recovery time: 60ns Max. load current: 0.3A Type of diode: switching Max. forward voltage: 1.2V Load current: 0.1A Capacitance: 3pF Max. forward impulse current: 2A |
auf Bestellung 214 Stücke: Lieferzeit 14-21 Tag (e) |
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1SS381(TPH3,F) | TOSHIBA |
Category: Diodes - others Description: Diode: switching; 30V; 100mA; SOD523; single diode; Ufmax: 0.85V Case: SOD523 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 30V Features of semiconductor devices: band-switching; RF Type of diode: switching Max. forward voltage: 0.85V Load current: 0.1A Capacitance: 0.7pF |
Produkt ist nicht verfügbar |
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1SS387,L3F(T | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOD523; Ufmax: 1.2V; Ifsm: 1A Power dissipation: 0.15W Case: SOD523 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 85V Features of semiconductor devices: ultrafast switching Reverse recovery time: 4ns Max. load current: 0.3A Type of diode: switching Max. forward voltage: 1.2V Load current: 0.1A Capacitance: 3pF Max. forward impulse current: 1A |
auf Bestellung 46970 Stücke: Lieferzeit 14-21 Tag (e) |
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1SS387CT,L3F(T | TOSHIBA |
Category: SMD universal diodes Description: Diode: switching; SMD; 85V; 100mA; 1.6ns; SOD882; Ufmax: 1.2V; 150mW Power dissipation: 0.15W Case: SOD882 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 85V Features of semiconductor devices: ultrafast switching Reverse recovery time: 1.6ns Max. load current: 0.2A Type of diode: switching Max. forward voltage: 1.2V Load current: 0.1A Capacitance: 0.5pF Max. forward impulse current: 1A |
Produkt ist nicht verfügbar |
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2SC2713-BL(TE85L,F | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.15W; SC59 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 0.1A Power dissipation: 0.15W Case: SC59 Current gain: 350...700 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 2430 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC2713-GR,LF(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.15W; SC59 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 0.1A Power dissipation: 0.15W Case: SC59 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 18890 Stücke: Lieferzeit 14-21 Tag (e) |
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74LCX08FT(AE) | TOSHIBA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 1.65÷3.6VDC; -40÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 1.65...3.6V DC Operating temperature: -40...125°C Kind of package: reel; tape Delay time: 6.5ns Family: LCX Terminal pitch: 0.65mm |
Produkt ist nicht verfügbar |
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TLP104(E(T | TOSHIBA |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: gate; 3.75kV; 1Mbps; SO6; 15kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: gate Insulation voltage: 3.75kV Transfer rate: 1Mbps Case: SO6 Slew rate: 15kV/μs |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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| TLP104(TPL.E(T | TOSHIBA |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 3.75kV Case: SO6 Turn-on time: 550ns Turn-off time: 0.4µs Max. off-state voltage: 5V Output voltage: -500mV...30V |
Produkt ist nicht verfügbar |
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| TLP104(TPR.E(T | TOSHIBA |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 3.75kV Case: SO6 Turn-on time: 550ns Turn-off time: 0.4µs Max. off-state voltage: 5V Output voltage: -500mV...30V |
Produkt ist nicht verfügbar |
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| TLP104(V4-TPL.E(T | TOSHIBA |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: open collector Insulation voltage: 3.75kV Case: SO6 Turn-on time: 550ns Turn-off time: 0.4µs Max. off-state voltage: 5V Output voltage: -500mV...30V |
Produkt ist nicht verfügbar |
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GT40WR21,Q(O | TOSHIBA |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN Type of transistor: IGBT Collector-emitter voltage: 1.8kV Collector current: 40A Power dissipation: 375W Case: TO3PN Gate-emitter voltage: ±25V Pulsed collector current: 80A Mounting: THT Kind of package: tube Turn-on time: 950ns Turn-off time: 570ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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TPHR9003NL | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 78W; SOP8A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Power dissipation: 78W Case: SOP8A Gate-source voltage: ±20V On-state resistance: 1.4mΩ Mounting: SMD Gate charge: 74nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 351 Stücke: Lieferzeit 14-21 Tag (e) |
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CUS520,H3F(T | TOSHIBA |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Semiconductor structure: single diode Max. forward voltage: 0.6V Case: SOD323 Kind of package: reel; tape Max. forward impulse current: 1A |
auf Bestellung 1499 Stücke: Lieferzeit 14-21 Tag (e) |
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DF5A5.6F(TE85L,F) | TOSHIBA |
Category: Transil diodes - arrays Description: Diode: TVS array; 5.6V; 0.2W; unidirectional,common anode; SOT25 Number of channels: 4 Mounting: SMD Case: SOT25 Kind of package: reel; tape Breakdown voltage: 5.6V Leakage current: 1µA Type of diode: TVS array Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.2W Semiconductor structure: common anode; unidirectional |
Produkt ist nicht verfügbar |
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| TLP5754H(D4TP4.E(T | TOSHIBA |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: totem pole Insulation voltage: 5kV Case: SO6L Turn-on time: 15ns Turn-off time: 8ns Slew rate: 35kV/μs Number of pins: 6 |
Produkt ist nicht verfügbar |
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| TLP5754H(TP.E(T | TOSHIBA |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: totem pole Insulation voltage: 5kV Case: SO6L Turn-on time: 15ns Turn-off time: 8ns Slew rate: 35kV/μs Number of pins: 6 |
Produkt ist nicht verfügbar |
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| TLX9185A(TEEGBTF(O | TOSHIBA |
Category: Optocouplers - others Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; Uce: 80V; SO6; Uout: 6V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Insulation voltage: 3.75kV Collector-emitter voltage: 80V Case: SO6 Turn-on time: 5µs Turn-off time: 5µs Output voltage: 6V |
Produkt ist nicht verfügbar |
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TK34E10N1,S1X(S | TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 75A Power dissipation: 103W Case: TO220 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 812 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM6K403TU,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6 Mounting: SMD Case: UF6 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 4.2A On-state resistance: 66mΩ Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 16.8nC Kind of channel: enhanced Gate-source voltage: ±10V |
auf Bestellung 281 Stücke: Lieferzeit 14-21 Tag (e) |
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| SSM3K72KCT,L3F(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C Mounting: SMD Case: CST3C Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.4A On-state resistance: 1.75Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Gate charge: 0.39nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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SSM3J328R,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F Mounting: SMD Case: SOT23F Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 88.4mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 12.8nC Kind of channel: enhanced Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |
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SSM3J334R,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F Mounting: SMD Case: SOT23F Kind of package: reel; tape Drain-source voltage: -30V Drain current: -4A On-state resistance: 136mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 5.9nC Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 2310 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K341R,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F Mounting: SMD Case: SOT23F Kind of package: reel; tape Drain-source voltage: 60V Drain current: 6A On-state resistance: 69mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Kind of channel: enhanced Pulsed drain current: 24A Gate-source voltage: ±20V |
auf Bestellung 5683 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K36FS,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM Mounting: SMD Case: SSM Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.5A On-state resistance: 1.52Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Kind of channel: enhanced Pulsed drain current: 1A Gate-source voltage: ±10V |
Produkt ist nicht verfügbar |
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SSM6J502NU,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6 Mounting: SMD Case: uDFN6 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 60.5mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 24.8nC Kind of channel: enhanced Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |
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SSM6J503NU,LF(T | TOSHIBA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6 Mounting: SMD Case: uDFN6 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6A On-state resistance: 89.6mΩ Type of transistor: P-MOSFET Power dissipation: 1W Polarisation: unipolar Gate charge: 12.8nC Kind of channel: enhanced Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |
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SSM6K504NU,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6 Mounting: SMD Case: uDFN6 Kind of package: reel; tape Drain-source voltage: 30V Drain current: 9A On-state resistance: 26mΩ Type of transistor: N-MOSFET Power dissipation: 1.25W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 4.8nC Kind of channel: enhanced Pulsed drain current: 18A Gate-source voltage: ±20V |
auf Bestellung 1678 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3K35MFV,L3F(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723 Mounting: SMD Case: SOT723 Kind of package: reel; tape Drain-source voltage: 20V Drain current: 0.18A On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V |
Produkt ist nicht verfügbar |
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SSM3K7002KFU,LF(T | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70 Mounting: SMD Case: SC70 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 0.4A On-state resistance: 1.75Ω Type of transistor: N-MOSFET Power dissipation: 0.15W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Gate charge: 0.39nC Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 38125 Stücke: Lieferzeit 14-21 Tag (e) |
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TBC857B,LM(T | TOSHIBA |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.32W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.32W Case: SOT23 Current gain: 210...475 Mounting: SMD Kind of package: reel; tape Frequency: 80MHz |
Produkt ist nicht verfügbar |
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TDTC114E,LM(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: NPN Power dissipation: 0.32W Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
auf Bestellung 7210 Stücke: Lieferzeit 14-21 Tag (e) |
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TDTC114Y,LM(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 10kΩ; R2: 47kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 7910 Stücke: Lieferzeit 14-21 Tag (e) |
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TDTC124E,LM(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 22kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: NPN Power dissipation: 0.32W Polarisation: bipolar Kind of transistor: BRT Base resistor: 22kΩ Base-emitter resistor: 22kΩ Frequency: 250MHz |
auf Bestellung 8050 Stücke: Lieferzeit 14-21 Tag (e) |
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TDTC144E,LM(T | TOSHIBA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ Mounting: SMD Collector-emitter voltage: 50V Case: SOT23 Collector current: 0.1A Kind of package: reel; tape Type of transistor: NPN Power dissipation: 0.32W Polarisation: bipolar Kind of transistor: BRT Base resistor: 47kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz |
auf Bestellung 10660 Stücke: Lieferzeit 14-21 Tag (e) |
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74LCX125FT(AE) | TOSHIBA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 4 Mounting: SMD Case: TSSOP14 Manufacturer series: LCX Supply voltage: 1.65...3.6V DC Operating temperature: -40...125°C Kind of output: 3-state Kind of package: reel; tape Delay time: 7ns Terminal pitch: 0.65mm |
Produkt ist nicht verfügbar |
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74LCX126FT(AE) | TOSHIBA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Supply voltage: 1.65...3.6V DC Case: TSSOP14 Operating temperature: -40...125°C Mounting: SMD Kind of package: reel; tape Number of channels: 4 Delay time: 7ns Kind of output: 3-state Terminal pitch: 0.65mm Manufacturer series: LCX |
Produkt ist nicht verfügbar |
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TK3P50D,RQ | TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3A Power dissipation: 60W Case: DPAK Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
| TLP3083(F(O |
|
Hersteller: TOSHIBA
Category: Optotriacs
Description: Optotriac; 5kV; DIP6; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5kV
Case: DIP6
Max. off-state voltage: 0.8kV
Trigger current: 5mA
Mounting: THT
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 5kV; DIP6; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5kV
Case: DIP6
Max. off-state voltage: 0.8kV
Trigger current: 5mA
Mounting: THT
Number of channels: 1
Produkt ist nicht verfügbar
| TLP3083(TP5.F(O |
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Hersteller: TOSHIBA
Category: Optotriacs
Description: Optotriac; 5kV; DIP6; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5kV
Case: DIP6
Max. off-state voltage: 0.8kV
Trigger current: 5mA
Mounting: THT
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 5kV; DIP6; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5kV
Case: DIP6
Max. off-state voltage: 0.8kV
Trigger current: 5mA
Mounting: THT
Number of channels: 1
Produkt ist nicht verfügbar
| TLP3083F(D4.F(O |
|
Hersteller: TOSHIBA
Category: Optotriacs
Description: Optotriac; 5kV; DIP6; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5kV
Case: DIP6
Max. off-state voltage: 0.8kV
Trigger current: 5mA
Mounting: THT
Number of channels: 1
Category: Optotriacs
Description: Optotriac; 5kV; DIP6; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 5kV
Case: DIP6
Max. off-state voltage: 0.8kV
Trigger current: 5mA
Mounting: THT
Number of channels: 1
Produkt ist nicht verfügbar
| TLP3083(D4.TP5.F(O |
|
Hersteller: TOSHIBA
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 800V; zero voltage crossing driver; SO6
Type of optocoupler: optotriac
Mounting: SMD
Number of channels: 1
Kind of output: zero voltage crossing driver
Insulation voltage: 5kV
Case: SO6
Max. off-state voltage: 5V
Trigger current: 5mA
Output voltage: 800V
Category: Optotriacs
Description: Optotriac; 5kV; Uout: 800V; zero voltage crossing driver; SO6
Type of optocoupler: optotriac
Mounting: SMD
Number of channels: 1
Kind of output: zero voltage crossing driver
Insulation voltage: 5kV
Case: SO6
Max. off-state voltage: 5V
Trigger current: 5mA
Output voltage: 800V
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.82 EUR |
| TCR3UG12A,LF(S |
|
Hersteller: TOSHIBA
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; WCSP4F; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.66V
Output voltage: 1.2V
Output current: 0.3A
Case: WCSP4F
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.5...5.5V
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V; 0.3A; WCSP4F; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.66V
Output voltage: 1.2V
Output current: 0.3A
Case: WCSP4F
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 1.5...5.5V
Produkt ist nicht verfügbar
| TBD62004AFWG,EL |
|
Hersteller: TOSHIBA
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; PSOP16; 0.5A; 2÷50V; Ch: 7; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: PSOP16
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
Category: Drivers - integrated circuits
Description: IC: driver; transistor array; PSOP16; 0.5A; 2÷50V; Ch: 7; Uin: 0÷25V
Type of integrated circuit: driver
Kind of integrated circuit: transistor array
Case: PSOP16
Output current: 0.5A
Output voltage: 2...50V
Number of channels: 7
Mounting: SMD
Operating temperature: -40...85°C
Application: for inductive load
Input voltage: 0...25V
Produkt ist nicht verfügbar
| TTC004B,Q(S |
|
Hersteller: TOSHIBA
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1.5A; 1.5W; TO126
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 1.5W
Case: TO126
Current gain: 80...280
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1.5A; 1.5W; TO126
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1.5A
Power dissipation: 1.5W
Case: TO126
Current gain: 80...280
Mounting: THT
Kind of package: bulk
Frequency: 100MHz
auf Bestellung 3984 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 146+ | 0.49 EUR |
| 162+ | 0.44 EUR |
| 212+ | 0.34 EUR |
| 224+ | 0.32 EUR |
| RN1402(TE85L,F) |
|
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 50
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC59; R1: 10kΩ
Mounting: SMD
Case: SC59
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 50
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Produkt ist nicht verfügbar
| TLP2451A(TP,F) |
|
Hersteller: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; Uinsul: 3.75kV; SO8
Mounting: SMD
Number of channels: 1
Case: SO8
Slew rate: 20kV/μs
Type of optocoupler: optocoupler
Max. off-state voltage: 5V
Turn-on time: 50ns
Turn-off time: 50ns
Kind of output: totem pole
Insulation voltage: 3.75kV
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; Uinsul: 3.75kV; SO8
Mounting: SMD
Number of channels: 1
Case: SO8
Slew rate: 20kV/μs
Type of optocoupler: optocoupler
Max. off-state voltage: 5V
Turn-on time: 50ns
Turn-off time: 50ns
Kind of output: totem pole
Insulation voltage: 3.75kV
Produkt ist nicht verfügbar
| VFNC3S-2007PL |
|
Hersteller: TOSHIBA
Category: One Phase Inverters
Description: Inverter; Max motor power: 0.75kW; Usup: 200÷240VAC; Display: LED
Type of module: Inverter
Max motor power: 0.75kW
Inverter output voltage: 3 x 230V AC
Input 1 properties: 2 inputs for setting motor rotational speed by signals 0...10V, 4...20mA, 0...20mA or by means of the external potentiometer
The programming method: keypad and potentiometer
Electrical connection: screw terminals
Additional functions: dynamic braking control; locked by password; PID regulator; programmable relay NO output; PWM; RS485/422 (max 115kB/s)
Protection: anti-overvoltage OVP; maxiumum frequency overrun
Kind of display used: LED
Body dimensions: 72x130x131mm
Current output: 4...20mA
Manufacturer series: VFNC3S
Supply voltage: 200...240V AC
Voltage output: 0...10V
Category: One Phase Inverters
Description: Inverter; Max motor power: 0.75kW; Usup: 200÷240VAC; Display: LED
Type of module: Inverter
Max motor power: 0.75kW
Inverter output voltage: 3 x 230V AC
Input 1 properties: 2 inputs for setting motor rotational speed by signals 0...10V, 4...20mA, 0...20mA or by means of the external potentiometer
The programming method: keypad and potentiometer
Electrical connection: screw terminals
Additional functions: dynamic braking control; locked by password; PID regulator; programmable relay NO output; PWM; RS485/422 (max 115kB/s)
Protection: anti-overvoltage OVP; maxiumum frequency overrun
Kind of display used: LED
Body dimensions: 72x130x131mm
Current output: 4...20mA
Manufacturer series: VFNC3S
Supply voltage: 200...240V AC
Voltage output: 0...10V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 313.47 EUR |
| VFNC3S-2015PL |
|
Hersteller: TOSHIBA
Category: One Phase Inverters
Description: Inverter; Max motor power: 1.5kW; Usup: 200÷240VAC; Display: LED
Type of module: Inverter
Max motor power: 1.5kW
Inverter output voltage: 3 x 230V AC
Input 1 properties: 2 inputs for setting motor rotational speed by signals 0...10V, 4...20mA, 0...20mA or by means of the external potentiometer
The programming method: keypad and potentiometer
Electrical connection: screw terminals
Additional functions: dynamic braking control; locked by password; PID regulator; programmable relay NO output; PWM; RS485/422 (max 115kB/s)
Protection: anti-overvoltage OVP; maxiumum frequency overrun
Kind of display used: LED
Body dimensions: 105x130x156mm
Current output: 4...20mA
Manufacturer series: VFNC3S
Supply voltage: 200...240V AC
Voltage output: 0...10V
Category: One Phase Inverters
Description: Inverter; Max motor power: 1.5kW; Usup: 200÷240VAC; Display: LED
Type of module: Inverter
Max motor power: 1.5kW
Inverter output voltage: 3 x 230V AC
Input 1 properties: 2 inputs for setting motor rotational speed by signals 0...10V, 4...20mA, 0...20mA or by means of the external potentiometer
The programming method: keypad and potentiometer
Electrical connection: screw terminals
Additional functions: dynamic braking control; locked by password; PID regulator; programmable relay NO output; PWM; RS485/422 (max 115kB/s)
Protection: anti-overvoltage OVP; maxiumum frequency overrun
Kind of display used: LED
Body dimensions: 105x130x156mm
Current output: 4...20mA
Manufacturer series: VFNC3S
Supply voltage: 200...240V AC
Voltage output: 0...10V
Produkt ist nicht verfügbar
| VFNC3S-2022PL |
|
Hersteller: TOSHIBA
Category: One Phase Inverters
Description: Inverter; Max motor power: 2.2kW; Usup: 200÷240VAC; Display: LED
Type of module: Inverter
Max motor power: 2.2kW
Inverter output voltage: 3 x 230V AC
Input 1 properties: 2 inputs for setting motor rotational speed by signals 0...10V, 4...20mA, 0...20mA or by means of the external potentiometer
The programming method: keypad and potentiometer
Electrical connection: screw terminals
Additional functions: dynamic braking control; locked by password; PID regulator; programmable relay NO output; PWM; RS485/422 (max 115kB/s)
Protection: anti-overvoltage OVP; maxiumum frequency overrun
Kind of display used: LED
Body dimensions: 105x130x156mm
Current output: 4...20mA
Manufacturer series: VFNC3S
Supply voltage: 200...240V AC
Voltage output: 0...10V
Category: One Phase Inverters
Description: Inverter; Max motor power: 2.2kW; Usup: 200÷240VAC; Display: LED
Type of module: Inverter
Max motor power: 2.2kW
Inverter output voltage: 3 x 230V AC
Input 1 properties: 2 inputs for setting motor rotational speed by signals 0...10V, 4...20mA, 0...20mA or by means of the external potentiometer
The programming method: keypad and potentiometer
Electrical connection: screw terminals
Additional functions: dynamic braking control; locked by password; PID regulator; programmable relay NO output; PWM; RS485/422 (max 115kB/s)
Protection: anti-overvoltage OVP; maxiumum frequency overrun
Kind of display used: LED
Body dimensions: 105x130x156mm
Current output: 4...20mA
Manufacturer series: VFNC3S
Supply voltage: 200...240V AC
Voltage output: 0...10V
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 480.07 EUR |
| SSM6N35FE,LM(T |
|
Hersteller: TOSHIBA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.18A; 150mW; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.18A; 150mW; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Power dissipation: 0.15W
Case: SOT563
Gate-source voltage: ±10V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| TDTA114E,LM(T |
|
Hersteller: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: PNP
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Produkt ist nicht verfügbar
| TC75S57F(TE85L,F) |
|
Hersteller: TOSHIBA
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 1.8÷7V; SMT; SMV; reel,tape; 1pA
Type of integrated circuit: comparator
Mounting: SMT
Case: SMV
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: push-pull
Number of comparators: 1
Input offset voltage: 7mV
Kind of comparator: universal
Input offset current: 1pA
Operating voltage: 1.8...7V
Category: SMD comparators
Description: IC: comparator; universal; Cmp: 1; 1.8÷7V; SMT; SMV; reel,tape; 1pA
Type of integrated circuit: comparator
Mounting: SMT
Case: SMV
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: push-pull
Number of comparators: 1
Input offset voltage: 7mV
Kind of comparator: universal
Input offset current: 1pA
Operating voltage: 1.8...7V
Produkt ist nicht verfügbar
| TPH3R003PL,LQ(S |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 134A; Idm: 200A; 90W; SOP8
Mounting: SMD
Case: SOP8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 134A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 90W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 134A; Idm: 200A; 90W; SOP8
Mounting: SMD
Case: SOP8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 134A
On-state resistance: 4.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 90W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 200A
Produkt ist nicht verfügbar
| TPH6R003NL,LQ(S |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 57A; Idm: 117A; 34W; SOP8
Mounting: SMD
Case: SOP8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 57A
On-state resistance: 8.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 34W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 117A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 57A; Idm: 117A; 34W; SOP8
Mounting: SMD
Case: SOP8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 57A
On-state resistance: 8.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 34W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 117A
Produkt ist nicht verfügbar
| TPN6R003NL,LQ(S |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 56A; Idm: 116A; 32W; TSON8
Mounting: SMD
Case: TSON8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 56A
On-state resistance: 8.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 116A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 56A; Idm: 116A; 32W; TSON8
Mounting: SMD
Case: TSON8
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 56A
On-state resistance: 8.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 116A
Produkt ist nicht verfügbar
| 1SS193(TE85L,F) |
|
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT346; Ufmax: 1.2V; Ifsm: 2A
Power dissipation: 0.15W
Case: SOT346
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 85V
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 3pF
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT346; Ufmax: 1.2V; Ifsm: 2A
Power dissipation: 0.15W
Case: SOT346
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 85V
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 3pF
Max. forward impulse current: 2A
Produkt ist nicht verfügbar
| 1SS250(TE85L,F) |
|
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 100mA; 60ns; SOT346; Ufmax: 1.2V; 150mW
Power dissipation: 0.15W
Case: SOT346
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 250V
Features of semiconductor devices: fast switching
Reverse recovery time: 60ns
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 3pF
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 100mA; 60ns; SOT346; Ufmax: 1.2V; 150mW
Power dissipation: 0.15W
Case: SOT346
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 250V
Features of semiconductor devices: fast switching
Reverse recovery time: 60ns
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 3pF
Max. forward impulse current: 2A
Produkt ist nicht verfügbar
| 1SS300(TE85L,F) |
|
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT323; Ufmax: 1.2V; Ifsm: 2A
Power dissipation: 0.1W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Max. off-state voltage: 85V
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 4pF
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOT323; Ufmax: 1.2V; Ifsm: 2A
Power dissipation: 0.1W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; double
Max. off-state voltage: 85V
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 4pF
Max. forward impulse current: 2A
Produkt ist nicht verfügbar
| 1SS307E,L3F(T |
|
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; SOD523; Ufmax: 1.3V; Ifsm: 1A
Power dissipation: 0.15W
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 85V
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.3V
Load current: 0.1A
Capacitance: 6pF
Max. forward impulse current: 1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; SOD523; Ufmax: 1.3V; Ifsm: 1A
Power dissipation: 0.15W
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 85V
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.3V
Load current: 0.1A
Capacitance: 6pF
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
| 1SS370(TE85L,F) |
|
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 100mA; 60ns; SOT323; Ufmax: 1.2V; 100mW
Power dissipation: 0.1W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 250V
Features of semiconductor devices: fast switching
Reverse recovery time: 60ns
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 3pF
Max. forward impulse current: 2A
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 100mA; 60ns; SOT323; Ufmax: 1.2V; 100mW
Power dissipation: 0.1W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 250V
Features of semiconductor devices: fast switching
Reverse recovery time: 60ns
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 3pF
Max. forward impulse current: 2A
auf Bestellung 214 Stücke:
Lieferzeit 14-21 Tag (e)| 1SS381(TPH3,F) |
Hersteller: TOSHIBA
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; SOD523; single diode; Ufmax: 0.85V
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 30V
Features of semiconductor devices: band-switching; RF
Type of diode: switching
Max. forward voltage: 0.85V
Load current: 0.1A
Capacitance: 0.7pF
Category: Diodes - others
Description: Diode: switching; 30V; 100mA; SOD523; single diode; Ufmax: 0.85V
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 30V
Features of semiconductor devices: band-switching; RF
Type of diode: switching
Max. forward voltage: 0.85V
Load current: 0.1A
Capacitance: 0.7pF
Produkt ist nicht verfügbar
| 1SS387,L3F(T |
|
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOD523; Ufmax: 1.2V; Ifsm: 1A
Power dissipation: 0.15W
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 85V
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 3pF
Max. forward impulse current: 1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 4ns; SOD523; Ufmax: 1.2V; Ifsm: 1A
Power dissipation: 0.15W
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 85V
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 4ns
Max. load current: 0.3A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 3pF
Max. forward impulse current: 1A
auf Bestellung 46970 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 760+ | 0.094 EUR |
| 1950+ | 0.037 EUR |
| 2160+ | 0.033 EUR |
| 2720+ | 0.026 EUR |
| 2875+ | 0.025 EUR |
| 1SS387CT,L3F(T |
|
Hersteller: TOSHIBA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 1.6ns; SOD882; Ufmax: 1.2V; 150mW
Power dissipation: 0.15W
Case: SOD882
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 85V
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 1.6ns
Max. load current: 0.2A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 0.5pF
Max. forward impulse current: 1A
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 100mA; 1.6ns; SOD882; Ufmax: 1.2V; 150mW
Power dissipation: 0.15W
Case: SOD882
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Max. off-state voltage: 85V
Features of semiconductor devices: ultrafast switching
Reverse recovery time: 1.6ns
Max. load current: 0.2A
Type of diode: switching
Max. forward voltage: 1.2V
Load current: 0.1A
Capacitance: 0.5pF
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
| 2SC2713-BL(TE85L,F |
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.15W; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC59
Current gain: 350...700
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.15W; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC59
Current gain: 350...700
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2430 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 600+ | 0.12 EUR |
| 670+ | 0.11 EUR |
| 870+ | 0.083 EUR |
| 910+ | 0.079 EUR |
| 2SC2713-GR,LF(T |
|
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.15W; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC59
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 0.1A; 0.15W; SC59
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC59
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 18890 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 510+ | 0.14 EUR |
| 800+ | 0.09 EUR |
| 980+ | 0.074 EUR |
| 1030+ | 0.07 EUR |
| 3000+ | 0.067 EUR |
| 74LCX08FT(AE) |
|
Hersteller: TOSHIBA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 1.65÷3.6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Delay time: 6.5ns
Family: LCX
Terminal pitch: 0.65mm
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 1.65÷3.6VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Delay time: 6.5ns
Family: LCX
Terminal pitch: 0.65mm
Produkt ist nicht verfügbar
| TLP104(E(T |
|
Hersteller: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; 3.75kV; 1Mbps; SO6; 15kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Insulation voltage: 3.75kV
Transfer rate: 1Mbps
Case: SO6
Slew rate: 15kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: gate; 3.75kV; 1Mbps; SO6; 15kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: gate
Insulation voltage: 3.75kV
Transfer rate: 1Mbps
Case: SO6
Slew rate: 15kV/μs
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 53+ | 1.36 EUR |
| 59+ | 1.22 EUR |
| 73+ | 0.99 EUR |
| 77+ | 0.93 EUR |
| TLP104(TPL.E(T |
|
Hersteller: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Produkt ist nicht verfügbar
| TLP104(TPR.E(T |
|
Hersteller: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Produkt ist nicht verfügbar
| TLP104(V4-TPL.E(T |
|
Hersteller: TOSHIBA
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: open collector; Uinsul: 3.75kV; SO6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: open collector
Insulation voltage: 3.75kV
Case: SO6
Turn-on time: 550ns
Turn-off time: 0.4µs
Max. off-state voltage: 5V
Output voltage: -500mV...30V
Produkt ist nicht verfügbar
| GT40WR21,Q(O |
|
Hersteller: TOSHIBA
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 1.8kV
Collector current: 40A
Power dissipation: 375W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 950ns
Turn-off time: 570ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
Type of transistor: IGBT
Collector-emitter voltage: 1.8kV
Collector current: 40A
Power dissipation: 375W
Case: TO3PN
Gate-emitter voltage: ±25V
Pulsed collector current: 80A
Mounting: THT
Kind of package: tube
Turn-on time: 950ns
Turn-off time: 570ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 15.62 EUR |
| 7+ | 10.95 EUR |
| TPHR9003NL |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 78W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 78W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 78W; SOP8A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 78W
Case: SOP8A
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 351 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.58 EUR |
| 23+ | 3.2 EUR |
| 28+ | 2.63 EUR |
| 29+ | 2.49 EUR |
| CUS520,H3F(T |
|
Hersteller: TOSHIBA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 1A
auf Bestellung 1499 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 715+ | 0.1 EUR |
| 1490+ | 0.048 EUR |
| DF5A5.6F(TE85L,F) |
|
Hersteller: TOSHIBA
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 0.2W; unidirectional,common anode; SOT25
Number of channels: 4
Mounting: SMD
Case: SOT25
Kind of package: reel; tape
Breakdown voltage: 5.6V
Leakage current: 1µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.2W
Semiconductor structure: common anode; unidirectional
Category: Transil diodes - arrays
Description: Diode: TVS array; 5.6V; 0.2W; unidirectional,common anode; SOT25
Number of channels: 4
Mounting: SMD
Case: SOT25
Kind of package: reel; tape
Breakdown voltage: 5.6V
Leakage current: 1µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.2W
Semiconductor structure: common anode; unidirectional
Produkt ist nicht verfügbar
| TLP5754H(D4TP4.E(T |
|
Hersteller: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 35kV/μs
Number of pins: 6
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 35kV/μs
Number of pins: 6
Produkt ist nicht verfügbar
| TLP5754H(TP.E(T |
|
Hersteller: TOSHIBA
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 35kV/μs
Number of pins: 6
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: totem pole; 5kV; SO6L; 35kV/μs; PIN: 6
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: totem pole
Insulation voltage: 5kV
Case: SO6L
Turn-on time: 15ns
Turn-off time: 8ns
Slew rate: 35kV/μs
Number of pins: 6
Produkt ist nicht verfügbar
| TLX9185A(TEEGBTF(O |
|
Hersteller: TOSHIBA
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; Uce: 80V; SO6; Uout: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Collector-emitter voltage: 80V
Case: SO6
Turn-on time: 5µs
Turn-off time: 5µs
Output voltage: 6V
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; Uce: 80V; SO6; Uout: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Collector-emitter voltage: 80V
Case: SO6
Turn-on time: 5µs
Turn-off time: 5µs
Output voltage: 6V
Produkt ist nicht verfügbar
| TK34E10N1,S1X(S |
|
Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 103W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 75A; 103W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 75A
Power dissipation: 103W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 812 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 1.34 EUR |
| 60+ | 1.2 EUR |
| 68+ | 1.06 EUR |
| 70+ | 1.03 EUR |
| 74+ | 0.97 EUR |
| 75+ | 0.96 EUR |
| SSM6K403TU,LF(T |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6
Mounting: SMD
Case: UF6
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 4.2A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 16.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 0.5W; UF6
Mounting: SMD
Case: UF6
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 4.2A
On-state resistance: 66mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 16.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
auf Bestellung 281 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 177+ | 0.4 EUR |
| 264+ | 0.27 EUR |
| 281+ | 0.26 EUR |
| SSM3K72KCT,L3F(T |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C
Mounting: SMD
Case: CST3C
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.4A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.39nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 500mW; CST3C
Mounting: SMD
Case: CST3C
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.4A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Gate charge: 0.39nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| SSM3J328R,LF(T |
|
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 88.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 88.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
| SSM3J334R,LF(T |
|
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -4A
On-state resistance: 136mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 5.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -4A
On-state resistance: 136mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 5.9nC
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 2310 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 380+ | 0.19 EUR |
| 455+ | 0.16 EUR |
| 520+ | 0.14 EUR |
| 550+ | 0.13 EUR |
| 585+ | 0.12 EUR |
| SSM3K341R,LF(T |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 6A
On-state resistance: 69mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 24A
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6A; Idm: 24A; 2.4W; SOT23F
Mounting: SMD
Case: SOT23F
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 6A
On-state resistance: 69mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.4W
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 24A
Gate-source voltage: ±20V
auf Bestellung 5683 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 158+ | 0.45 EUR |
| 180+ | 0.4 EUR |
| 205+ | 0.35 EUR |
| 216+ | 0.33 EUR |
| SSM3K36FS,LF(T |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM
Mounting: SMD
Case: SSM
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 1.52Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 1A
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 150mW; SSM
Mounting: SMD
Case: SSM
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.5A
On-state resistance: 1.52Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Kind of channel: enhanced
Pulsed drain current: 1A
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
| SSM6J502NU,LF(T |
|
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 60.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 24.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 60.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 24.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
| SSM6J503NU,LF(T |
|
Hersteller: TOSHIBA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 89.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; 1W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -6A
On-state resistance: 89.6mΩ
Type of transistor: P-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Gate charge: 12.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
| SSM6K504NU,LF(T |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 9A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 4.8nC
Kind of channel: enhanced
Pulsed drain current: 18A
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 18A; 1.25W; uDFN6
Mounting: SMD
Case: uDFN6
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 9A
On-state resistance: 26mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 4.8nC
Kind of channel: enhanced
Pulsed drain current: 18A
Gate-source voltage: ±20V
auf Bestellung 1678 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 355+ | 0.2 EUR |
| 425+ | 0.17 EUR |
| 470+ | 0.15 EUR |
| 510+ | 0.14 EUR |
| SSM3K35MFV,L3F(T |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.18A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.18A; 150mW; SOT723
Mounting: SMD
Case: SOT723
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 0.18A
On-state resistance: 20Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Kind of channel: enhanced
Gate-source voltage: ±10V
Produkt ist nicht verfügbar
| SSM3K7002KFU,LF(T |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70
Mounting: SMD
Case: SC70
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.4A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 0.39nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.4A; 150mW; SC70
Mounting: SMD
Case: SC70
Kind of package: reel; tape
Drain-source voltage: 60V
Drain current: 0.4A
On-state resistance: 1.75Ω
Type of transistor: N-MOSFET
Power dissipation: 0.15W
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Gate charge: 0.39nC
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 38125 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 725+ | 0.099 EUR |
| 970+ | 0.074 EUR |
| 1075+ | 0.067 EUR |
| 1320+ | 0.054 EUR |
| 1400+ | 0.051 EUR |
| TBC857B,LM(T |
|
Hersteller: TOSHIBA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.32W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.32W
Case: SOT23
Current gain: 210...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 0.15A; 0.32W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.32W
Case: SOT23
Current gain: 210...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Produkt ist nicht verfügbar
| TDTC114E,LM(T |
|
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 10kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
auf Bestellung 7210 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1520+ | 0.047 EUR |
| 2170+ | 0.033 EUR |
| 2460+ | 0.029 EUR |
| 2800+ | 0.026 EUR |
| 2950+ | 0.024 EUR |
| TDTC114Y,LM(T |
|
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 10kΩ; R2: 47kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; SOT23; R1: 10kΩ; R2: 47kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 7910 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1520+ | 0.047 EUR |
| 2160+ | 0.033 EUR |
| 2455+ | 0.029 EUR |
| 2795+ | 0.026 EUR |
| 2945+ | 0.024 EUR |
| TDTC124E,LM(T |
|
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 22kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Frequency: 250MHz
auf Bestellung 8050 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1520+ | 0.047 EUR |
| 2170+ | 0.033 EUR |
| 2460+ | 0.029 EUR |
| 2800+ | 0.026 EUR |
| 2950+ | 0.024 EUR |
| TDTC144E,LM(T |
|
Hersteller: TOSHIBA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.32W; SOT23; R1: 47kΩ
Mounting: SMD
Collector-emitter voltage: 50V
Case: SOT23
Collector current: 0.1A
Kind of package: reel; tape
Type of transistor: NPN
Power dissipation: 0.32W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
auf Bestellung 10660 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1520+ | 0.047 EUR |
| 2170+ | 0.033 EUR |
| 2460+ | 0.029 EUR |
| 2800+ | 0.026 EUR |
| 2950+ | 0.024 EUR |
| 74LCX125FT(AE) |
|
Hersteller: TOSHIBA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Delay time: 7ns
Terminal pitch: 0.65mm
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Mounting: SMD
Case: TSSOP14
Manufacturer series: LCX
Supply voltage: 1.65...3.6V DC
Operating temperature: -40...125°C
Kind of output: 3-state
Kind of package: reel; tape
Delay time: 7ns
Terminal pitch: 0.65mm
Produkt ist nicht verfügbar
| 74LCX126FT(AE) |
|
Hersteller: TOSHIBA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...3.6V DC
Case: TSSOP14
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Delay time: 7ns
Kind of output: 3-state
Terminal pitch: 0.65mm
Manufacturer series: LCX
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 7ns
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Supply voltage: 1.65...3.6V DC
Case: TSSOP14
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Delay time: 7ns
Kind of output: 3-state
Terminal pitch: 0.65mm
Manufacturer series: LCX
Produkt ist nicht verfügbar
| TK3P50D,RQ |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar