| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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2V7002KT1G | ONSEMI |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
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2V7002LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.225W Polarisation: unipolar Drain current: 0.115A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 7.5Ω |
auf Bestellung 2860 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS4141 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 5W; SO8 Kind of package: reel; tape Mounting: SMD Power dissipation: 5W Gate charge: 35nC Polarisation: unipolar Technology: PowerTrench® Drain current: -10.8A Kind of channel: enhanced Drain-source voltage: -40V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: SO8 On-state resistance: 13mΩ |
auf Bestellung 2356 Stücke: Lieferzeit 14-21 Tag (e) |
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RHRP15120 | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 200A; TO220-2; 100W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 15A Max. load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 200A Case: TO220-2 Max. forward voltage: 3.2V Heatsink thickness: max. 1.4mm Power dissipation: 100W Reverse recovery time: 65ns |
auf Bestellung 116 Stücke: Lieferzeit 14-21 Tag (e) |
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MJE182G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 3A; 15W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3A Power dissipation: 15W Case: TO225 Current gain: 12...250 Mounting: THT Kind of package: bulk Frequency: 50MHz |
auf Bestellung 148 Stücke: Lieferzeit 14-21 Tag (e) |
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| NL17SZ08DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC88A Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NL17SZ08XV5T2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT553; 1.65÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SOT553 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 10µA |
Produkt ist nicht verfügbar |
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NLV17SZ08DFT2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: AND Number of channels: single; 1 Number of inputs: 2 Mounting: SMD Case: SC88A Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Kind of package: reel; tape Quiescent current: 10µA |
auf Bestellung 1896 Stücke: Lieferzeit 14-21 Tag (e) |
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CM1224-04SO | ONSEMI |
Category: Transil diodes - arrays Description: Diode: TVS array; 6V; 0.225W; SOT23-6; Features: ESD protection Type of diode: TVS array Mounting: SMD Kind of package: reel; tape Case: SOT23-6 Leakage current: 0.1µA Features of semiconductor devices: ESD protection Peak pulse power dissipation: 0.225W Capacitance: 0.6...0.8pF Max. off-state voltage: 3.3...5V Breakdown voltage: 6V Number of channels: 4 |
auf Bestellung 1221 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP302035MNTWG | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Case: PQFN31 5X5 Topology: MOSFET half-bridge Operating temperature: -40...125°C Mounting: SMD Supply voltage: 4.5...5.5V DC Output current: 35A Type of integrated circuit: driver Impulse rise time: 12ns Pulse fall time: 6ns Kind of integrated circuit: gate driver; high-side; low-side |
Produkt ist nicht verfügbar |
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| NCP1126BP65G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 8.5÷35V; DIP7 Operating temperature: -40...125°C Mounting: SMD Kind of integrated circuit: AC/DC switcher; PWM controller Case: DIP7 Operating voltage: 8.5...35V Frequency: 61...71kHz On-state resistance: 5.4Ω Type of integrated circuit: PMIC Number of channels: 1 |
Produkt ist nicht verfügbar |
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| 74LCX126BQX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; QFN14; LCX; 2÷3.6VDC Operating temperature: -40...85°C Manufacturer series: LCX Mounting: SMD Kind of output: 3-state Kind of package: reel; tape Kind of integrated circuit: buffer; non-inverting Case: QFN14 Supply voltage: 2...3.6V DC Type of integrated circuit: digital Number of channels: 4 Quiescent current: 10µA |
Produkt ist nicht verfügbar |
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MUR1100ERLG | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: CASE59 Max. forward impulse current: 35A Reverse recovery time: 75ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NCP1521BSNT1G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; Uin: 2.7÷5.5V; Uout: 0.9÷3.3V; TSOP5; buck Case: TSOP5 Mounting: SMD Frequency: 1.3...1.8MHz Output current: 600mA Operating temperature: -40...85°C Output voltage: 0.9...3.3V Topology: buck Input voltage: 2.7...5.5V Number of channels: 1 Type of integrated circuit: PMIC |
Produkt ist nicht verfügbar |
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| FDMC86260ET150 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Pulsed drain current: 116A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 69mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS86255ET150 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56 Kind of package: reel; tape Drain-source voltage: 150V Drain current: 44A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 136W Polarisation: unipolar Gate charge: 63nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 276A Mounting: SMD Case: Power56 |
Produkt ist nicht verfügbar |
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FDN327N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
auf Bestellung 2240 Stücke: Lieferzeit 14-21 Tag (e) |
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| HCPL0601R2 | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; SO8; 10kV/μs Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 3.75kV Case: SO8 Turn-on time: 50ns Turn-off time: 12ns Slew rate: 10kV/μs |
Produkt ist nicht verfügbar |
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FDP075N15A-F102 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 92A Power dissipation: 333W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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FQPF85N06 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 37.5A; 62W; TO220FP Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 37.5A Power dissipation: 62W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 10mΩ Mounting: THT Gate charge: 112nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002ET1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 1.2A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.2Ω Mounting: SMD Gate charge: 0.81nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 5599 Stücke: Lieferzeit 14-21 Tag (e) |
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2N7002ET7G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.22A Pulsed drain current: 1.2A Power dissipation: 0.42W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.81nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2070 Stücke: Lieferzeit 14-21 Tag (e) |
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FDD8424H | ONSEMI |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V Kind of package: reel; tape Mounting: SMD Power dissipation: 3.1W Gate charge: 20/24nC Polarisation: unipolar Technology: PowerTrench® Drain current: 20/20A Kind of channel: enhanced Drain-source voltage: 40/-40V Kind of transistor: complementary pair Type of transistor: N/P-MOSFET Gate-source voltage: ±20/±20V Semiconductor structure: common drain Case: TO252-4 On-state resistance: 37/80mΩ |
auf Bestellung 813 Stücke: Lieferzeit 14-21 Tag (e) |
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FDV305N | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.9A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 303mΩ Mounting: SMD Gate charge: 1.5nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 8940 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC6305N | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6 Mounting: SMD Case: SuperSOT-6 Power dissipation: 0.96W Kind of package: reel; tape On-state resistance: 128mΩ Polarisation: unipolar Gate charge: 5nC Technology: PowerTrench® Drain current: 2.7A Drain-source voltage: 20V Kind of channel: enhanced Gate-source voltage: ±8V Type of transistor: N-MOSFET x2 |
auf Bestellung 1728 Stücke: Lieferzeit 14-21 Tag (e) |
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| 74AUP1G98L6X | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter; Schmitt trigger Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: MicroPak6 Manufacturer series: AUP Supply voltage: 800mV DC...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP |
Produkt ist nicht verfügbar |
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NCP1392DDR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V Case: SO8 Topology: MOSFET half-bridge Operating temperature: -40...125°C Voltage class: 600V Mounting: SMD Supply voltage: 8...17.5V DC Output current: -1A...500mA Type of integrated circuit: driver Impulse rise time: 40ns Pulse fall time: 20ns |
Produkt ist nicht verfügbar |
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4N27M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 10%@10mA Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 2µs Turn-off time: 2µs |
auf Bestellung 809 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74AC32DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Family: AC |
auf Bestellung 353 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74AC32DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SOIC14 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC |
Produkt ist nicht verfügbar |
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| MC74AC32DTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: TSSOP14 Manufacturer series: AC Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC |
Produkt ist nicht verfügbar |
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| MRS1504T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A Mounting: SMD Case: SMB Kind of package: reel; tape Semiconductor structure: single diode Max. forward impulse current: 50A Type of diode: rectifying Max. off-state voltage: 0.4kV Max. load current: 3A Max. forward voltage: 1.02V Load current: 1.5A |
Produkt ist nicht verfügbar |
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1SMB5930BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 16V; 23.4mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 16V Zener current: 23.4mA Mounting: SMD Tolerance: ±5% Zener resistance: 10Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
auf Bestellung 1425 Stücke: Lieferzeit 14-21 Tag (e) |
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MUN5215T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.202W Case: SC70; SOT323 Current gain: 160...350 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ |
Produkt ist nicht verfügbar |
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BSP52T1G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 670 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP52T3G | ONSEMI |
Category: NPN SMD Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| RSL10-SENSE-GEVK | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; Bluetooth board Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10 Programmers and development kits features: Bluetooth board Type of development kit: evaluation |
Produkt ist nicht verfügbar |
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DTC124EET1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75 Current gain: 60...100 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
auf Bestellung 4448 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX84C18LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.05uA Type of diode: Zener Power dissipation: 0.3W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA |
auf Bestellung 2575 Stücke: Lieferzeit 14-21 Tag (e) |
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SZBZX84C18ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.225W; 18V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.225W Zener voltage: 18V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 50nA |
Produkt ist nicht verfügbar |
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NCV317MBSTT3G | ONSEMI |
Category: Regulated voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223 Mounting: SMD Application: automotive industry Manufacturer series: NCV317M Number of channels: 1 Output current: 0.5A Operating temperature: -40...125°C Kind of voltage regulator: adjustable; linear Input voltage: 1.2...40V Case: SOT223 Tolerance: ±4% Output voltage: 1.2...37V Voltage drop: 0.23V Type of integrated circuit: voltage regulator Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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NCV317MABSTT3G | ONSEMI |
Category: Regulated voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223 Mounting: SMD Application: automotive industry Manufacturer series: NCV317M Number of channels: 1 Output current: 0.5A Operating temperature: -40...125°C Kind of voltage regulator: adjustable; linear Input voltage: 1.2...40V Case: SOT223 Tolerance: ±2% Output voltage: 1.2...37V Voltage drop: 0.23V Type of integrated circuit: voltage regulator Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MUR420RLG | ONSEMI |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel Max. forward impulse current: 125A Case: CASE267-05 Max. forward voltage: 0.89V Reverse recovery time: 25ns |
auf Bestellung 1480 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRS120T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 1A; SMB; reel,tape Case: SMB Mounting: SMD Kind of package: reel; tape Max. forward voltage: 0.6V Semiconductor structure: single diode Type of diode: Schottky rectifying Max. off-state voltage: 20V Load current: 1A |
Produkt ist nicht verfügbar |
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| FDMS003N08C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 92A; Idm: 658A; 125W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 92A Pulsed drain current: 658A Power dissipation: 125W Case: Power56 Gate-source voltage: ±20V On-state resistance: 8.1mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS007N08LC | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 53A Pulsed drain current: 345A Power dissipation: 92.6W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 11.6mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS0300S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 49A Pulsed drain current: 180A Power dissipation: 96W Case: Power56 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 133nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS0306AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 49A Pulsed drain current: 100A Power dissipation: 59W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS0308AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 49A Pulsed drain current: 100A Power dissipation: 50W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS0309AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 49A Pulsed drain current: 100A Power dissipation: 50W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 47nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS0310AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56 Mounting: SMD Kind of package: reel; tape Power dissipation: 41W Polarisation: unipolar Case: Power56 Gate charge: 37nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Drain-source voltage: 30V Drain current: 22A On-state resistance: 6mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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| FDMS0312AS | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 100A Power dissipation: 36W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS0312S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 42A Pulsed drain current: 90A Power dissipation: 46W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS037N08B | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104.2W Case: PQFN8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS039N08B | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS1D2N03DSD | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 54/126A Power dissipation: 26/42W Case: PQFN8 Gate-source voltage: ±20/±20V On-state resistance: 4.9/1.6mΩ Mounting: SMD Gate charge: 33/117nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS2672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 96A; 78W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 13A Pulsed drain current: 96A Power dissipation: 78W Case: Power56 Gate-source voltage: ±20V On-state resistance: 156mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS2D5N08C | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 105A; Idm: 823A; 138W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 80V Drain current: 105A Pulsed drain current: 823A Power dissipation: 138W Case: Power56 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 84nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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|
FQT4N20LTF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223 Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 0.68A Power dissipation: 2.2W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3471 Stücke: Lieferzeit 14-21 Tag (e) |
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 |
HUF75344P3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Power dissipation: 285W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 53 Stücke: Lieferzeit 14-21 Tag (e) |
|
| 2V7002KT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.3A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 2V7002LT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.225W
Polarisation: unipolar
Drain current: 0.115A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 7.5Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.115A; 0.225W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.225W
Polarisation: unipolar
Drain current: 0.115A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 7.5Ω
auf Bestellung 2860 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 360+ | 0.2 EUR |
| 700+ | 0.1 EUR |
| 790+ | 0.091 EUR |
| 910+ | 0.079 EUR |
| 965+ | 0.074 EUR |
| FDS4141 |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 5W; SO8
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 5W
Gate charge: 35nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -10.8A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 13mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.8A; 5W; SO8
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 5W
Gate charge: 35nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -10.8A
Kind of channel: enhanced
Drain-source voltage: -40V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: SO8
On-state resistance: 13mΩ
auf Bestellung 2356 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 55+ | 1.32 EUR |
| 65+ | 1.11 EUR |
| 92+ | 0.78 EUR |
| 98+ | 0.74 EUR |
| RHRP15120 |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 200A; TO220-2; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220-2
Max. forward voltage: 3.2V
Heatsink thickness: max. 1.4mm
Power dissipation: 100W
Reverse recovery time: 65ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 200A; TO220-2; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220-2
Max. forward voltage: 3.2V
Heatsink thickness: max. 1.4mm
Power dissipation: 100W
Reverse recovery time: 65ns
auf Bestellung 116 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 35+ | 2.1 EUR |
| 39+ | 1.84 EUR |
| 46+ | 1.57 EUR |
| 49+ | 1.49 EUR |
| MJE182G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 15W
Case: TO225
Current gain: 12...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 15W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 15W
Case: TO225
Current gain: 12...250
Mounting: THT
Kind of package: bulk
Frequency: 50MHz
auf Bestellung 148 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 60+ | 1.21 EUR |
| 132+ | 0.54 EUR |
| 147+ | 0.49 EUR |
| NL17SZ08DFT2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
| NL17SZ08XV5T2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT553; 1.65÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SOT553; 1.65÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SOT553
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Produkt ist nicht verfügbar
| NLV17SZ08DFT2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Mounting: SMD
Case: SC88A
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Quiescent current: 10µA
auf Bestellung 1896 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 144+ | 0.5 EUR |
| 216+ | 0.33 EUR |
| 288+ | 0.25 EUR |
| 556+ | 0.13 EUR |
| 589+ | 0.12 EUR |
| CM1224-04SO |
|
Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 0.225W; SOT23-6; Features: ESD protection
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT23-6
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.225W
Capacitance: 0.6...0.8pF
Max. off-state voltage: 3.3...5V
Breakdown voltage: 6V
Number of channels: 4
Category: Transil diodes - arrays
Description: Diode: TVS array; 6V; 0.225W; SOT23-6; Features: ESD protection
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOT23-6
Leakage current: 0.1µA
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 0.225W
Capacitance: 0.6...0.8pF
Max. off-state voltage: 3.3...5V
Breakdown voltage: 6V
Number of channels: 4
auf Bestellung 1221 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 67+ | 1.07 EUR |
| 115+ | 0.63 EUR |
| 126+ | 0.57 EUR |
| 157+ | 0.46 EUR |
| 167+ | 0.43 EUR |
| NCP302035MNTWG |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Case: PQFN31 5X5
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Output current: 35A
Type of integrated circuit: driver
Impulse rise time: 12ns
Pulse fall time: 6ns
Kind of integrated circuit: gate driver; high-side; low-side
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Case: PQFN31 5X5
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Output current: 35A
Type of integrated circuit: driver
Impulse rise time: 12ns
Pulse fall time: 6ns
Kind of integrated circuit: gate driver; high-side; low-side
Produkt ist nicht verfügbar
| NCP1126BP65G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 8.5÷35V; DIP7
Operating temperature: -40...125°C
Mounting: SMD
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: DIP7
Operating voltage: 8.5...35V
Frequency: 61...71kHz
On-state resistance: 5.4Ω
Type of integrated circuit: PMIC
Number of channels: 1
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 8.5÷35V; DIP7
Operating temperature: -40...125°C
Mounting: SMD
Kind of integrated circuit: AC/DC switcher; PWM controller
Case: DIP7
Operating voltage: 8.5...35V
Frequency: 61...71kHz
On-state resistance: 5.4Ω
Type of integrated circuit: PMIC
Number of channels: 1
Produkt ist nicht verfügbar
| 74LCX126BQX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; QFN14; LCX; 2÷3.6VDC
Operating temperature: -40...85°C
Manufacturer series: LCX
Mounting: SMD
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Case: QFN14
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 4
Quiescent current: 10µA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; QFN14; LCX; 2÷3.6VDC
Operating temperature: -40...85°C
Manufacturer series: LCX
Mounting: SMD
Kind of output: 3-state
Kind of package: reel; tape
Kind of integrated circuit: buffer; non-inverting
Case: QFN14
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Number of channels: 4
Quiescent current: 10µA
Produkt ist nicht verfügbar
| MUR1100ERLG | |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: CASE59
Max. forward impulse current: 35A
Reverse recovery time: 75ns
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; reel,tape; Ifsm: 35A; CASE59; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: CASE59
Max. forward impulse current: 35A
Reverse recovery time: 75ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
| NCP1521BSNT1G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 2.7÷5.5V; Uout: 0.9÷3.3V; TSOP5; buck
Case: TSOP5
Mounting: SMD
Frequency: 1.3...1.8MHz
Output current: 600mA
Operating temperature: -40...85°C
Output voltage: 0.9...3.3V
Topology: buck
Input voltage: 2.7...5.5V
Number of channels: 1
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 2.7÷5.5V; Uout: 0.9÷3.3V; TSOP5; buck
Case: TSOP5
Mounting: SMD
Frequency: 1.3...1.8MHz
Output current: 600mA
Operating temperature: -40...85°C
Output voltage: 0.9...3.3V
Topology: buck
Input voltage: 2.7...5.5V
Number of channels: 1
Type of integrated circuit: PMIC
Produkt ist nicht verfügbar
| FDMC86260ET150 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Pulsed drain current: 116A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Pulsed drain current: 116A
Power dissipation: 65W
Case: Power33
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS86255ET150 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 44A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Gate charge: 63nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 276A
Mounting: SMD
Case: Power56
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Kind of package: reel; tape
Drain-source voltage: 150V
Drain current: 44A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Gate charge: 63nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 276A
Mounting: SMD
Case: Power56
Produkt ist nicht verfügbar
| FDN327N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 2240 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 239+ | 0.3 EUR |
| 286+ | 0.25 EUR |
| 317+ | 0.23 EUR |
| 368+ | 0.19 EUR |
| 391+ | 0.18 EUR |
| HCPL0601R2 |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; SO8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
Case: SO8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 10kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 3.75kV; SO8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 3.75kV
Case: SO8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 10kV/μs
Produkt ist nicht verfügbar
| FDP075N15A-F102 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 9.12 EUR |
| 12+ | 6.03 EUR |
| FQPF85N06 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37.5A; 62W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37.5A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 37.5A; 62W; TO220FP
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 37.5A
Power dissipation: 62W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 112nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.63 EUR |
| 23+ | 3.25 EUR |
| 29+ | 2.5 EUR |
| 31+ | 2.37 EUR |
| 2N7002ET1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.22A; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 1.2Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 5599 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 313+ | 0.23 EUR |
| 491+ | 0.15 EUR |
| 719+ | 0.1 EUR |
| 847+ | 0.085 EUR |
| 1774+ | 0.04 EUR |
| 1873+ | 0.038 EUR |
| 2N7002ET7G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 220mA; Idm: 1.2A; 0.42W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.22A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.81nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2070 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 556+ | 0.13 EUR |
| 705+ | 0.1 EUR |
| 1055+ | 0.068 EUR |
| 1260+ | 0.057 EUR |
| 1563+ | 0.046 EUR |
| 1799+ | 0.04 EUR |
| 2070+ | 0.034 EUR |
| FDD8424H |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 20/24nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 20/20A
Kind of channel: enhanced
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20/±20V
Semiconductor structure: common drain
Case: TO252-4
On-state resistance: 37/80mΩ
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Kind of package: reel; tape
Mounting: SMD
Power dissipation: 3.1W
Gate charge: 20/24nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: 20/20A
Kind of channel: enhanced
Drain-source voltage: 40/-40V
Kind of transistor: complementary pair
Type of transistor: N/P-MOSFET
Gate-source voltage: ±20/±20V
Semiconductor structure: common drain
Case: TO252-4
On-state resistance: 37/80mΩ
auf Bestellung 813 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 32+ | 2.25 EUR |
| 49+ | 1.47 EUR |
| 73+ | 0.99 EUR |
| 77+ | 0.93 EUR |
| FDV305N |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 303mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.9A; 0.35W; SOT23
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 303mΩ
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 8940 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 266+ | 0.27 EUR |
| 379+ | 0.19 EUR |
| 428+ | 0.17 EUR |
| 520+ | 0.14 EUR |
| 550+ | 0.13 EUR |
| FDC6305N |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Power dissipation: 0.96W
Kind of package: reel; tape
On-state resistance: 128mΩ
Polarisation: unipolar
Gate charge: 5nC
Technology: PowerTrench®
Drain current: 2.7A
Drain-source voltage: 20V
Kind of channel: enhanced
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 2.7A; 0.96W; SuperSOT-6
Mounting: SMD
Case: SuperSOT-6
Power dissipation: 0.96W
Kind of package: reel; tape
On-state resistance: 128mΩ
Polarisation: unipolar
Gate charge: 5nC
Technology: PowerTrench®
Drain current: 2.7A
Drain-source voltage: 20V
Kind of channel: enhanced
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
auf Bestellung 1728 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 99+ | 0.73 EUR |
| 164+ | 0.44 EUR |
| 178+ | 0.4 EUR |
| 206+ | 0.35 EUR |
| 219+ | 0.33 EUR |
| 500+ | 0.32 EUR |
| 74AUP1G98L6X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Manufacturer series: AUP
Supply voltage: 800mV DC...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: MicroPak6
Manufacturer series: AUP
Supply voltage: 800mV DC...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Produkt ist nicht verfügbar
| NCP1392DDR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Case: SO8
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Voltage class: 600V
Mounting: SMD
Supply voltage: 8...17.5V DC
Output current: -1A...500mA
Type of integrated circuit: driver
Impulse rise time: 40ns
Pulse fall time: 20ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Case: SO8
Topology: MOSFET half-bridge
Operating temperature: -40...125°C
Voltage class: 600V
Mounting: SMD
Supply voltage: 8...17.5V DC
Output current: -1A...500mA
Type of integrated circuit: driver
Impulse rise time: 40ns
Pulse fall time: 20ns
Produkt ist nicht verfügbar
| 4N27M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 10%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 10%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
auf Bestellung 809 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 103+ | 0.7 EUR |
| 151+ | 0.47 EUR |
| 190+ | 0.38 EUR |
| 274+ | 0.26 EUR |
| 290+ | 0.25 EUR |
| MC74AC32DG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
auf Bestellung 353 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 97+ | 0.74 EUR |
| 114+ | 0.63 EUR |
| 133+ | 0.54 EUR |
| 164+ | 0.44 EUR |
| 174+ | 0.41 EUR |
| MC74AC32DR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SOIC14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SOIC14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Produkt ist nicht verfügbar
| MC74AC32DTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; AC; 2÷6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Manufacturer series: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Produkt ist nicht verfügbar
| MRS1504T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 50A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. load current: 3A
Max. forward voltage: 1.02V
Load current: 1.5A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1.5A; SMB; Ufmax: 1.02V; Ifsm: 50A
Mounting: SMD
Case: SMB
Kind of package: reel; tape
Semiconductor structure: single diode
Max. forward impulse current: 50A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. load current: 3A
Max. forward voltage: 1.02V
Load current: 1.5A
Produkt ist nicht verfügbar
| 1SMB5930BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; 23.4mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Zener current: 23.4mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 10Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 16V; 23.4mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 16V
Zener current: 23.4mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 10Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
auf Bestellung 1425 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 148+ | 0.49 EUR |
| 211+ | 0.34 EUR |
| 391+ | 0.18 EUR |
| 569+ | 0.13 EUR |
| 603+ | 0.12 EUR |
| MUN5215T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.202W
Case: SC70; SOT323
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.202W; SC70,SOT323; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.202W
Case: SC70; SOT323
Current gain: 160...350
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Produkt ist nicht verfügbar
| BSP52T1G | |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 670 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 205+ | 0.35 EUR |
| 275+ | 0.26 EUR |
| 360+ | 0.2 EUR |
| 385+ | 0.19 EUR |
| BSP52T3G |
|
Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
| RSL10-SENSE-GEVK |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
Category: Development kits - others
Description: Dev.kit: evaluation; Bluetooth board
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Type of development kit: evaluation
Produkt ist nicht verfügbar
| DTC124EET1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Current gain: 60...100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 4448 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1450+ | 0.05 EUR |
| 1600+ | 0.045 EUR |
| 2075+ | 0.034 EUR |
| 2200+ | 0.033 EUR |
| BZX84C18LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 18V; SMD; reel,tape; SOT23; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
auf Bestellung 2575 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1725+ | 0.042 EUR |
| 2575+ | 0.027 EUR |
| SZBZX84C18ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.225W; 18V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.225W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 50nA
Produkt ist nicht verfügbar
| NCV317MBSTT3G |
|
Hersteller: ONSEMI
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223
Mounting: SMD
Application: automotive industry
Manufacturer series: NCV317M
Number of channels: 1
Output current: 0.5A
Operating temperature: -40...125°C
Kind of voltage regulator: adjustable; linear
Input voltage: 1.2...40V
Case: SOT223
Tolerance: ±4%
Output voltage: 1.2...37V
Voltage drop: 0.23V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223
Mounting: SMD
Application: automotive industry
Manufacturer series: NCV317M
Number of channels: 1
Output current: 0.5A
Operating temperature: -40...125°C
Kind of voltage regulator: adjustable; linear
Input voltage: 1.2...40V
Case: SOT223
Tolerance: ±4%
Output voltage: 1.2...37V
Voltage drop: 0.23V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Produkt ist nicht verfügbar
| NCV317MABSTT3G |
|
Hersteller: ONSEMI
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223
Mounting: SMD
Application: automotive industry
Manufacturer series: NCV317M
Number of channels: 1
Output current: 0.5A
Operating temperature: -40...125°C
Kind of voltage regulator: adjustable; linear
Input voltage: 1.2...40V
Case: SOT223
Tolerance: ±2%
Output voltage: 1.2...37V
Voltage drop: 0.23V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Category: Regulated voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.2÷37V; 0.5A; SOT223
Mounting: SMD
Application: automotive industry
Manufacturer series: NCV317M
Number of channels: 1
Output current: 0.5A
Operating temperature: -40...125°C
Kind of voltage regulator: adjustable; linear
Input voltage: 1.2...40V
Case: SOT223
Tolerance: ±2%
Output voltage: 1.2...37V
Voltage drop: 0.23V
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Produkt ist nicht verfügbar
| MUR420RLG | |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 4A; reel; Ifsm: 125A; CASE267-05; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel
Max. forward impulse current: 125A
Case: CASE267-05
Max. forward voltage: 0.89V
Reverse recovery time: 25ns
auf Bestellung 1480 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 117+ | 0.61 EUR |
| 131+ | 0.55 EUR |
| 143+ | 0.5 EUR |
| 162+ | 0.44 EUR |
| 235+ | 0.3 EUR |
| 248+ | 0.29 EUR |
| 1000+ | 0.28 EUR |
| MBRS120T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SMB; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.6V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Load current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 1A; SMB; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.6V
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Max. off-state voltage: 20V
Load current: 1A
Produkt ist nicht verfügbar
| FDMS003N08C |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 92A; Idm: 658A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 92A
Pulsed drain current: 658A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 92A; Idm: 658A; 125W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 92A
Pulsed drain current: 658A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 8.1mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS007N08LC |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 53A; Idm: 345A; 92.6W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 53A
Pulsed drain current: 345A
Power dissipation: 92.6W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 11.6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS0300S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS0306AS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS0308AS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS0309AS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 50W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 47nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS0310AS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 41W
Polarisation: unipolar
Case: Power56
Gate charge: 37nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 22A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 41W
Polarisation: unipolar
Case: Power56
Gate charge: 37nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
Drain-source voltage: 30V
Drain current: 22A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| FDMS0312AS |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 36W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 36W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 36W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 31nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS0312S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 90A
Power dissipation: 46W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 90A; 46W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 90A
Power dissipation: 46W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS037N08B |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104.2W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 100A; Idm: 400A; 104.2W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104.2W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS039N08B |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS1D2N03DSD |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 54/126A; 26/42W; PQFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 54/126A
Power dissipation: 26/42W
Case: PQFN8
Gate-source voltage: ±20/±20V
On-state resistance: 4.9/1.6mΩ
Mounting: SMD
Gate charge: 33/117nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS2672 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 96A; 78W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13A
Pulsed drain current: 96A
Power dissipation: 78W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13A; Idm: 96A; 78W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13A
Pulsed drain current: 96A
Power dissipation: 78W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 156mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS2D5N08C |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 105A; Idm: 823A; 138W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 105A
Pulsed drain current: 823A
Power dissipation: 138W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 105A; Idm: 823A; 138W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 105A
Pulsed drain current: 823A
Power dissipation: 138W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQT4N20LTF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.68A
Power dissipation: 2.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3471 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 96+ | 0.75 EUR |
| 114+ | 0.63 EUR |
| 146+ | 0.49 EUR |
| 155+ | 0.46 EUR |
| 1000+ | 0.44 EUR |
| HUF75344P3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 18+ | 4.02 EUR |
| 20+ | 3.62 EUR |
| 26+ | 2.8 EUR |
| 28+ | 2.65 EUR |