![FDMS0310AS FDMS0310AS](https://www.mouser.com/images/fairchildsemiconductor/lrg/PQFN_Power56_8_DSL.jpg)
auf Bestellung 2295 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.67 EUR |
10+ | 0.65 EUR |
100+ | 0.64 EUR |
500+ | 0.6 EUR |
1000+ | 0.59 EUR |
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Technische Details FDMS0310AS onsemi / Fairchild
Description: MOSFET N-CH 30V 19A/22A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V, Power Dissipation (Max): 2.5W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V.
Weitere Produktangebote FDMS0310AS nach Preis ab 0.72 EUR bis 1.71 EUR
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FDMS0310AS | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS0310AS | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS0310AS | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FDMS0310AS | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 100A Power dissipation: 41W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS0310AS | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 100A Power dissipation: 41W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |