FDMS0309AS onsemi
Hersteller: onsemi
Description: MOSFET N-CH 30V 21A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
Description: MOSFET N-CH 30V 21A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 21A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.53 EUR |
6000+ | 0.49 EUR |
9000+ | 0.47 EUR |
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Technische Details FDMS0309AS onsemi
Description: MOSFET N-CH 30V 21A/49A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 21A, 10V, Power Dissipation (Max): 2.5W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V.
Weitere Produktangebote FDMS0309AS nach Preis ab 0.51 EUR bis 2.04 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FDMS0309AS | Hersteller : onsemi / Fairchild | MOSFETs 30V N-Channel PowerTrench SyncFET |
auf Bestellung 5640 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS0309AS | Hersteller : onsemi |
Description: MOSFET N-CH 30V 21A/49A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 21A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V |
auf Bestellung 35973 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS0309AS | Hersteller : ON Semiconductor | Trans MOSFET N-CH Si 30V 21A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS0309AS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Mounting: SMD Case: Power56 Drain-source voltage: 30V Drain current: 49A On-state resistance: 4.8mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS0309AS | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 50W; Power56 Mounting: SMD Case: Power56 Drain-source voltage: 30V Drain current: 49A On-state resistance: 4.8mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 100A |
Produkt ist nicht verfügbar |