FQT4N20LTF onsemi
Hersteller: onsemiDescription: MOSFET N-CH 200V 850MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 850mA (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 425mA, 10V
Power Dissipation (Max): 2.2W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4000+ | 0.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FQT4N20LTF onsemi
Description: MOSFET N-CH 200V 850MA SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 850mA (Tc), Rds On (Max) @ Id, Vgs: 1.35Ohm @ 425mA, 10V, Power Dissipation (Max): 2.2W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223-4, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V.
Weitere Produktangebote FQT4N20LTF nach Preis ab 0.44 EUR bis 1.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FQT4N20LTF | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223 Mounting: SMD Gate charge: 5.2nC Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT223 Drain-source voltage: 200V Drain current: 0.68A On-state resistance: 1.4Ω Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3471 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
|
|
FQT4N20LTF | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 0.68A; 2.2W; SOT223 Mounting: SMD Gate charge: 5.2nC Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±20V Case: SOT223 Drain-source voltage: 200V Drain current: 0.68A On-state resistance: 1.4Ω Type of transistor: N-MOSFET Power dissipation: 2.2W Polarisation: unipolar Kind of package: reel; tape |
auf Bestellung 3471 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
FQT4N20LTF | Hersteller : onsemi / Fairchild |
MOSFET 200V Single |
auf Bestellung 64486 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
FQT4N20LTF | Hersteller : onsemi |
Description: MOSFET N-CH 200V 850MA SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 850mA (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 425mA, 10V Power Dissipation (Max): 2.2W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V |
auf Bestellung 6946 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
FQT4N20LTF | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 200V 0.85A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |