| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| MC14518BDWG | ONSEMI |
 Category: Counters/dividersDescription: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC Mounting: SMD Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: tube Technology: CMOS Kind of integrated circuit: BCD; up counter Case: SO16WB Number of inputs: 3 Type of integrated circuit: digital Number of channels: 2 |
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| MC14518BDWR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC Mounting: SMD Operating temperature: -55...125°C Supply voltage: 3...18V DC Kind of package: reel; tape Technology: CMOS Kind of integrated circuit: BCD; up counter Case: SO16WB Number of inputs: 3 Type of integrated circuit: digital Number of channels: 2 |
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BAV74LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ifsm: 500mA; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 50V Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Capacitance: 2pF Case: SOT23 Max. forward impulse current: 0.5A Power dissipation: 0.3W Kind of package: reel; tape |
auf Bestellung 3600 Stücke: Lieferzeit 14-21 Tag (e) |
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KSD560YTU | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 5A Power dissipation: 1.5W Case: TO220AB Mounting: THT Kind of package: tube |
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NCV7342D10R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape Supply voltage: 4.5...5.5V DC Operating temperature: -40...125°C Mounting: SMD Application: automotive industry Kind of package: reel; tape Kind of integrated circuit: transceiver Case: SO8 Type of integrated circuit: interface |
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NCV7342D13R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape Supply voltage: 4.5...5.5V DC Mounting: SMD Application: automotive industry Kind of package: reel; tape Kind of integrated circuit: transceiver Case: SO8 Type of integrated circuit: interface |
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HUF75344G3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247 Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 75A Power dissipation: 285W Case: TO247 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: THT Gate charge: 7nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 282 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP156AAFCT120280T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA Case: WLCSP6 Mounting: SMD Operating temperature: -40...125°C Manufacturer series: NCP156 Input voltage: 0.8...3.6V Output voltage: 1.2V; 2.8V Tolerance: ±1% Kind of voltage regulator: fixed; LDO; linear Output current: 250...500mA Type of integrated circuit: voltage regulator Number of channels: 2 |
Produkt ist nicht verfügbar |
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MBRS190T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 90V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.75V Case: SMB Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| FDMS7620S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 13/22A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 30/15.1mΩ Mounting: SMD Gate charge: 11/23nC Kind of package: reel; tape Kind of channel: enhanced |
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| FDMS9620S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 16/18A; Idm: 60A; 2.5W Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 16/18A Pulsed drain current: 60A Power dissipation: 2.5W Case: Power56 Gate-source voltage: ±20V On-state resistance: 32/22mΩ Mounting: SMD Gate charge: 14/25nC Kind of package: reel; tape Kind of channel: enhanced |
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FQA70N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 49.5A Power dissipation: 214W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 23mΩ Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB11N40CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 135W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Pulsed drain current: 42A Power dissipation: 135W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced |
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FQB12P20TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -7.27A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 470mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
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FQB19N20CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 76A Drain-source voltage: 200V Drain current: 12.1A On-state resistance: 0.17Ω Type of transistor: N-MOSFET Power dissipation: 139W Polarisation: unipolar Gate charge: 53nC Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±30V |
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FQB19N20LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 84A Drain-source voltage: 200V Drain current: 13.3A On-state resistance: 0.15Ω Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Gate charge: 35nC Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB19N20TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12.3A; Idm: 78A; 140W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Pulsed drain current: 78A Drain-source voltage: 200V Drain current: 12.3A On-state resistance: 0.15Ω Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Gate charge: 40nC Technology: QFET® Kind of channel: enhanced Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
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FQB1P50TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -0.95A; 63W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -500V Drain current: -0.95A Power dissipation: 63W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 10.5Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB22P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -15.6A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQB27P06TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -19.1A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQB34N20LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Power dissipation: 180W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
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FQB34N20TM-AM002 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 124A; 180W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Pulsed drain current: 124A Power dissipation: 180W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhanced |
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FQB34P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -23.5A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 664 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB34P10TM-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; Idm: -134A; 155W Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -23.5A Pulsed drain current: -134A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| FQB44N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 30.8A Power dissipation: 146W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 39mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| PCA9535ECMTTXG | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Interface: I2C; SMBus Kind of package: reel; tape Application: for LED applications Mounting: SMD Frequency: 1MHz Type of integrated circuit: interface Kind of integrated circuit: I/O expander Number of channels: 16 Case: WQFN24 Integrated circuit features: PWM |
Produkt ist nicht verfügbar |
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| PCA9535EDWR2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; SO24 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Interface: I2C; SMBus Kind of package: reel; tape Application: for LED applications Mounting: SMD Frequency: 1MHz Type of integrated circuit: interface Kind of integrated circuit: I/O expander Number of channels: 16 Case: SO24 Integrated circuit features: PWM |
Produkt ist nicht verfügbar |
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NCV7344AD10R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape Type of integrated circuit: interface Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 4.75...5.25V DC |
Produkt ist nicht verfügbar |
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NCV7344D10R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape Type of integrated circuit: interface Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 4.75...5.25V DC |
Produkt ist nicht verfügbar |
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NCV7344D13R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape Type of integrated circuit: interface Case: SO8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...150°C Application: automotive industry Kind of integrated circuit: transceiver Supply voltage: 4.75...5.25V DC |
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FXL4TD245BQX | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting Mounting: SMD Case: DQFN16 Supply voltage: 1.1...3.6V DC Operating temperature: -40...85°C Number of channels: 4 Number of inputs: 4 Number of outputs: 4 Kind of package: reel; tape |
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| 74AUP1T97FHX | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1 Technology: CMOS Case: uDFN6 Mounting: SMD Kind of package: reel; tape Manufacturer series: AUP Operating temperature: -40...85°C Kind of input: with Schmitt trigger Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator Family: AUP Number of inputs: 3 Supply voltage: 0.8...3.6V DC Type of integrated circuit: digital Number of channels: 1 |
Produkt ist nicht verfügbar |
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| 74AUP1T97L6X | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SIP6 Manufacturer series: AUP Supply voltage: 0.8...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP |
Produkt ist nicht verfügbar |
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FL7760AM6X | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter; LED driver Input voltage: 8...70V Output current: -2.5...1.5A Case: SOT23-6 Mounting: SMD Frequency: 1MHz Topology: buck Number of channels: 1 Kind of package: reel; tape Integrated circuit features: linear dimming; PWM Application: for LED applications |
Produkt ist nicht verfügbar |
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MMSZ6V8T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 4822 Stücke: Lieferzeit 14-21 Tag (e) |
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HCPL2531M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; 1Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV CTR@If: 19-50%@16mA Transfer rate: 1Mbps Case: DIP8 Max. off-state voltage: 5V Output voltage: -500mV...20V Manufacturer series: HCPL2531M |
auf Bestellung 672 Stücke: Lieferzeit 14-21 Tag (e) |
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HCPL2531SD | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 19-50%@16mA Type of optocoupler: optocoupler Mounting: SMD Number of channels: 2 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 19-50%@16mA Transfer rate: 1Mbps Case: Gull wing 8 Slew rate: 10kV/μs |
auf Bestellung 323 Stücke: Lieferzeit 14-21 Tag (e) |
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| HCPL2531SDM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 1Mbps; DIP8; 10kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 2 Kind of output: logic Insulation voltage: 5kV Transfer rate: 1Mbps Case: DIP8 Slew rate: 10kV/μs Max. off-state voltage: 5V Output voltage: -500mV...20V Manufacturer series: HCPL2531M |
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MBRF30H100CTG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Max. forward voltage: 0.93V Max. load current: 30A Max. off-state voltage: 100V Case: TO220FP Semiconductor structure: common cathode; double Max. forward impulse current: 250A Load current: 15A x2 |
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MC7805CTG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220AB; THT; MC7800 Case: TO220AB Tolerance: ±4% Output voltage: 5V Output current: 1A Voltage drop: 2V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 7...20V Kind of package: tube Manufacturer series: MC7800 Kind of voltage regulator: fixed; linear Heatsink thickness: 0.508...0.61mm Mounting: THT Operating temperature: 0...125°C |
auf Bestellung 474 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDB024N08BL7 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK Mounting: SMD Power dissipation: 246W Polarisation: unipolar Kind of package: reel; tape Gate charge: 178nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 916A Case: D2PAK Drain-source voltage: 80V Drain current: 162A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET |
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FDG1024NZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W Mounting: SMD Drain current: 1.2A Drain-source voltage: 20V Power dissipation: 0.36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 2.6nC Technology: PowerTrench® Kind of channel: enhanced On-state resistance: 389mΩ Gate-source voltage: ±8V Type of transistor: N-MOSFET x2 Case: SC70-6; SC88; SOT363 |
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FDME1024NZT | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET Mounting: SMD Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.2nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Case: MicroFET Drain-source voltage: 20V Drain current: 3.8A On-state resistance: 0.16Ω Type of transistor: N-MOSFET x2 |
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RFD14N05LSM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 14A Power dissipation: 48W Case: DPAK Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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RFD14N05LSM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 14A Power dissipation: 48W Case: DPAK Gate-source voltage: ±10V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2263 Stücke: Lieferzeit 14-21 Tag (e) |
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74ACT14MTC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Family: ACT |
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74ACT14SC | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Family: ACT |
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74ACT14SCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 40µA Kind of input: with Schmitt trigger Family: ACT |
Produkt ist nicht verfügbar |
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| FDMB2307NZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.7A; Idm: 40A; 2.2W; WDFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 9.7A Pulsed drain current: 40A Power dissipation: 2.2W Case: WDFN8 Gate-source voltage: ±12V Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced Semiconductor structure: common drain |
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| FDMB2308PZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -7A; Idm: -30A; 2.2W; WDFN6 Mounting: SMD Pulsed drain current: -30A Power dissipation: 2.2W Gate charge: 30nC Polarisation: unipolar Drain current: -7A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET x2 Kind of package: reel; tape Semiconductor structure: common drain Case: WDFN6 Gate-source voltage: ±12V |
Produkt ist nicht verfügbar |
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BC818-40LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.5A Power dissipation: 0.3W Case: SOT23 Current gain: 250...600 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
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BC808-25LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 25V; 0.5A; 0.3W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Frequency: 100MHz Collector-emitter voltage: 25V Current gain: 160...400 Collector current: 0.5A Type of transistor: PNP Power dissipation: 0.3W Polarisation: bipolar |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
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| FOD3180 | ONSEMI |
Category: Optocouplers - others Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Case: DIP8 Turn-on time: 75ns Turn-off time: 55ns Slew rate: 15kV/μs Max. off-state voltage: 5V Output voltage: 0...25V |
Produkt ist nicht verfügbar |
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MJE172G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 100V; 3A; 15W; TO225 Polarisation: bipolar Kind of package: bulk Case: TO225 Mounting: THT Power dissipation: 15W Frequency: 50MHz Collector-emitter voltage: 100V Collector current: 3A Type of transistor: PNP |
auf Bestellung 494 Stücke: Lieferzeit 14-21 Tag (e) |
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H11F1M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7kV; DIP6; H11FXM Mounting: THT Case: DIP6 Manufacturer series: H11FXM Insulation voltage: 7kV Number of channels: 1 Turn-off time: 25µs Turn-on time: 25µs Type of optocoupler: optocoupler Kind of output: transistor |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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NTMFS5C670NLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 440A Power dissipation: 1.8W Case: DFN5x6 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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AMIS41682CANM1RG | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: digital; transceiver; 5VDC; SMD; SO14; reel,tape Mounting: SMD Operating temperature: -40...125°C Supply voltage: 5V DC Kind of package: reel; tape Kind of integrated circuit: transceiver Case: SO14 Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
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1N4149TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.5A Semiconductor structure: single diode Capacitance: 2pF Max. forward impulse current: 4A Case: DO35 Max. forward voltage: 1V Leakage current: 50µA Power dissipation: 0.5W Reverse recovery time: 4ns |
auf Bestellung 1142 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC74VHC245DTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; VHC Type of integrated circuit: digital Kind of integrated circuit: bus buffer; line driver; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: TSSOP20 Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: VHC |
Produkt ist nicht verfügbar |
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MJF44H11G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 36W; TO220FP Mounting: THT Kind of package: tube Case: TO220FP Frequency: 50MHz Collector-emitter voltage: 80V Collector current: 10A Type of transistor: NPN Power dissipation: 36W Polarisation: bipolar |
Produkt ist nicht verfügbar |
| MC14518BDWG |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: BCD; up counter
Case: SO16WB
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: 2
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: tube
Technology: CMOS
Kind of integrated circuit: BCD; up counter
Case: SO16WB
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: 2
Produkt ist nicht verfügbar
| MC14518BDWR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: BCD; up counter
Case: SO16WB
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: 2
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Kind of package: reel; tape
Technology: CMOS
Kind of integrated circuit: BCD; up counter
Case: SO16WB
Number of inputs: 3
Type of integrated circuit: digital
Number of channels: 2
Produkt ist nicht verfügbar
| BAV74LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ifsm: 500mA; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ifsm: 500mA; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Capacitance: 2pF
Case: SOT23
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 3600 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.048 EUR |
| 2500+ | 0.029 EUR |
| 2800+ | 0.026 EUR |
| 3475+ | 0.021 EUR |
| 3600+ | 0.02 EUR |
| KSD560YTU |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 1.5W
Case: TO220AB
Mounting: THT
Kind of package: tube
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 1.5W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
| NCV7342D10R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Case: SO8
Type of integrated circuit: interface
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Case: SO8
Type of integrated circuit: interface
Produkt ist nicht verfügbar
| NCV7342D13R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Case: SO8
Type of integrated circuit: interface
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Case: SO8
Type of integrated circuit: interface
Produkt ist nicht verfügbar
| HUF75344G3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Type of transistor: N-MOSFET
Technology: UltraFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Power dissipation: 285W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: THT
Gate charge: 7nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 5.02 EUR |
| 21+ | 3.49 EUR |
| 22+ | 3.3 EUR |
| NCP156AAFCT120280T2G |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA
Case: WLCSP6
Mounting: SMD
Operating temperature: -40...125°C
Manufacturer series: NCP156
Input voltage: 0.8...3.6V
Output voltage: 1.2V; 2.8V
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Output current: 250...500mA
Type of integrated circuit: voltage regulator
Number of channels: 2
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA
Case: WLCSP6
Mounting: SMD
Operating temperature: -40...125°C
Manufacturer series: NCP156
Input voltage: 0.8...3.6V
Output voltage: 1.2V; 2.8V
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Output current: 250...500mA
Type of integrated circuit: voltage regulator
Number of channels: 2
Produkt ist nicht verfügbar
| MBRS190T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Case: SMB
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Case: SMB
Kind of package: reel; tape
Produkt ist nicht verfügbar
| FDMS7620S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS9620S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 16/18A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 16/18A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 32/22mΩ
Mounting: SMD
Gate charge: 14/25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 16/18A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 16/18A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 32/22mΩ
Mounting: SMD
Gate charge: 14/25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQA70N10 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.7 EUR |
| 22+ | 3.35 EUR |
| 28+ | 2.56 EUR |
| 30+ | 2.42 EUR |
| FQB11N40CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 135W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Pulsed drain current: 42A
Power dissipation: 135W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 135W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Pulsed drain current: 42A
Power dissipation: 135W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQB12P20TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQB19N20CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 76A
Drain-source voltage: 200V
Drain current: 12.1A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 53nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 76A
Drain-source voltage: 200V
Drain current: 12.1A
On-state resistance: 0.17Ω
Type of transistor: N-MOSFET
Power dissipation: 139W
Polarisation: unipolar
Gate charge: 53nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| FQB19N20LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 84A
Drain-source voltage: 200V
Drain current: 13.3A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 35nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 84A
Drain-source voltage: 200V
Drain current: 13.3A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 35nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 1.94 EUR |
| 41+ | 1.74 EUR |
| FQB19N20TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.3A; Idm: 78A; 140W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 78A
Drain-source voltage: 200V
Drain current: 12.3A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 40nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.3A; Idm: 78A; 140W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 78A
Drain-source voltage: 200V
Drain current: 12.3A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Gate charge: 40nC
Technology: QFET®
Kind of channel: enhanced
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| FQB1P50TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -0.95A; 63W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -0.95A
Power dissipation: 63W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 10.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -0.95A; 63W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -0.95A
Power dissipation: 63W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 10.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 5.11 EUR |
| FQB22P10TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQB27P06TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQB34N20LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQB34N20TM-AM002 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 124A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Pulsed drain current: 124A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 124A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Pulsed drain current: 124A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQB34P10TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 664 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.59 EUR |
| 23+ | 3.2 EUR |
| 29+ | 2.47 EUR |
| 31+ | 2.35 EUR |
| FQB34P10TM-F085 |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; Idm: -134A; 155W
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Pulsed drain current: -134A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; Idm: -134A; 155W
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Pulsed drain current: -134A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| FQB44N10TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30.8A
Power dissipation: 146W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30.8A
Power dissipation: 146W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PCA9535ECMTTXG |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Interface: I2C; SMBus
Kind of package: reel; tape
Application: for LED applications
Mounting: SMD
Frequency: 1MHz
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Number of channels: 16
Case: WQFN24
Integrated circuit features: PWM
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Interface: I2C; SMBus
Kind of package: reel; tape
Application: for LED applications
Mounting: SMD
Frequency: 1MHz
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Number of channels: 16
Case: WQFN24
Integrated circuit features: PWM
Produkt ist nicht verfügbar
| PCA9535EDWR2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; SO24
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Interface: I2C; SMBus
Kind of package: reel; tape
Application: for LED applications
Mounting: SMD
Frequency: 1MHz
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Number of channels: 16
Case: SO24
Integrated circuit features: PWM
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; SO24
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Interface: I2C; SMBus
Kind of package: reel; tape
Application: for LED applications
Mounting: SMD
Frequency: 1MHz
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Number of channels: 16
Case: SO24
Integrated circuit features: PWM
Produkt ist nicht verfügbar
| NCV7344AD10R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Produkt ist nicht verfügbar
| NCV7344D10R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Produkt ist nicht verfügbar
| NCV7344D13R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Application: automotive industry
Kind of integrated circuit: transceiver
Supply voltage: 4.75...5.25V DC
Produkt ist nicht verfügbar
| FXL4TD245BQX |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Mounting: SMD
Case: DQFN16
Supply voltage: 1.1...3.6V DC
Operating temperature: -40...85°C
Number of channels: 4
Number of inputs: 4
Number of outputs: 4
Kind of package: reel; tape
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Mounting: SMD
Case: DQFN16
Supply voltage: 1.1...3.6V DC
Operating temperature: -40...85°C
Number of channels: 4
Number of inputs: 4
Number of outputs: 4
Kind of package: reel; tape
Produkt ist nicht verfügbar
| 74AUP1T97FHX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1
Technology: CMOS
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: AUP
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator
Family: AUP
Number of inputs: 3
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1
Technology: CMOS
Case: uDFN6
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: AUP
Operating temperature: -40...85°C
Kind of input: with Schmitt trigger
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator
Family: AUP
Number of inputs: 3
Supply voltage: 0.8...3.6V DC
Type of integrated circuit: digital
Number of channels: 1
Produkt ist nicht verfügbar
| 74AUP1T97L6X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SIP6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SIP6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Produkt ist nicht verfügbar
| FL7760AM6X |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 8...70V
Output current: -2.5...1.5A
Case: SOT23-6
Mounting: SMD
Frequency: 1MHz
Topology: buck
Number of channels: 1
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Application: for LED applications
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 8...70V
Output current: -2.5...1.5A
Case: SOT23-6
Mounting: SMD
Frequency: 1MHz
Topology: buck
Number of channels: 1
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Application: for LED applications
Produkt ist nicht verfügbar
| MMSZ6V8T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 4822 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1309+ | 0.055 EUR |
| 1454+ | 0.049 EUR |
| 1998+ | 0.036 EUR |
| 2114+ | 0.034 EUR |
| HCPL2531M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Max. off-state voltage: 5V
Output voltage: -500mV...20V
Manufacturer series: HCPL2531M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; 1Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: DIP8
Max. off-state voltage: 5V
Output voltage: -500mV...20V
Manufacturer series: HCPL2531M
auf Bestellung 672 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 3.05 EUR |
| 35+ | 2.06 EUR |
| 45+ | 1.61 EUR |
| 47+ | 1.52 EUR |
| 500+ | 1.44 EUR |
| HCPL2531SD |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: Gull wing 8
Slew rate: 10kV/μs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; OUT: transistor; 2.5kV; CTR@If: 19-50%@16mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 19-50%@16mA
Transfer rate: 1Mbps
Case: Gull wing 8
Slew rate: 10kV/μs
auf Bestellung 323 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 34+ | 2.12 EUR |
| 39+ | 1.86 EUR |
| 53+ | 1.36 EUR |
| 57+ | 1.27 EUR |
| HCPL2531SDM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 1Mbps; DIP8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 1Mbps
Case: DIP8
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...20V
Manufacturer series: HCPL2531M
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: logic; Uinsul: 5kV; 1Mbps; DIP8; 10kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 2
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 1Mbps
Case: DIP8
Slew rate: 10kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...20V
Manufacturer series: HCPL2531M
Produkt ist nicht verfügbar
| MBRF30H100CTG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.93V
Max. load current: 30A
Max. off-state voltage: 100V
Case: TO220FP
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Load current: 15A x2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220FP; tube
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Max. forward voltage: 0.93V
Max. load current: 30A
Max. off-state voltage: 100V
Case: TO220FP
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Load current: 15A x2
Produkt ist nicht verfügbar
| MC7805CTG |
|
Hersteller: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220AB; THT; MC7800
Case: TO220AB
Tolerance: ±4%
Output voltage: 5V
Output current: 1A
Voltage drop: 2V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 7...20V
Kind of package: tube
Manufacturer series: MC7800
Kind of voltage regulator: fixed; linear
Heatsink thickness: 0.508...0.61mm
Mounting: THT
Operating temperature: 0...125°C
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; TO220AB; THT; MC7800
Case: TO220AB
Tolerance: ±4%
Output voltage: 5V
Output current: 1A
Voltage drop: 2V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 7...20V
Kind of package: tube
Manufacturer series: MC7800
Kind of voltage regulator: fixed; linear
Heatsink thickness: 0.508...0.61mm
Mounting: THT
Operating temperature: 0...125°C
auf Bestellung 474 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 87+ | 0.83 EUR |
| 118+ | 0.61 EUR |
| 189+ | 0.38 EUR |
| 240+ | 0.3 EUR |
| 253+ | 0.28 EUR |
| FDB024N08BL7 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Mounting: SMD
Power dissipation: 246W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 178nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 916A
Case: D2PAK
Drain-source voltage: 80V
Drain current: 162A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 162A; Idm: 916A; 246W; D2PAK
Mounting: SMD
Power dissipation: 246W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 178nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 916A
Case: D2PAK
Drain-source voltage: 80V
Drain current: 162A
On-state resistance: 2.4mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| FDG1024NZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Mounting: SMD
Drain current: 1.2A
Drain-source voltage: 20V
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.6nC
Technology: PowerTrench®
Kind of channel: enhanced
On-state resistance: 389mΩ
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Case: SC70-6; SC88; SOT363
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1.2A; 0.36W
Mounting: SMD
Drain current: 1.2A
Drain-source voltage: 20V
Power dissipation: 0.36W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 2.6nC
Technology: PowerTrench®
Kind of channel: enhanced
On-state resistance: 389mΩ
Gate-source voltage: ±8V
Type of transistor: N-MOSFET x2
Case: SC70-6; SC88; SOT363
Produkt ist nicht verfügbar
| FDME1024NZT |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: MicroFET
Drain-source voltage: 20V
Drain current: 3.8A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET x2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET
Mounting: SMD
Power dissipation: 1.4W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.2nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±8V
Case: MicroFET
Drain-source voltage: 20V
Drain current: 3.8A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET x2
Produkt ist nicht verfügbar
| RFD14N05LSM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 67+ | 1.08 EUR |
| 95+ | 0.76 EUR |
| 100+ | 0.72 EUR |
| RFD14N05LSM9A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 14A; 48W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 14A
Power dissipation: 48W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2263 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 49+ | 1.49 EUR |
| 98+ | 0.74 EUR |
| 122+ | 0.59 EUR |
| 140+ | 0.51 EUR |
| 148+ | 0.48 EUR |
| 74ACT14MTC |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: ACT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: ACT
Produkt ist nicht verfügbar
| 74ACT14SC |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: ACT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: ACT
Produkt ist nicht verfügbar
| 74ACT14SCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: ACT
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 40uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Family: ACT
Produkt ist nicht verfügbar
| FDMB2307NZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.7A; Idm: 40A; 2.2W; WDFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.7A
Pulsed drain current: 40A
Power dissipation: 2.2W
Case: WDFN8
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 9.7A; Idm: 40A; 2.2W; WDFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 9.7A
Pulsed drain current: 40A
Power dissipation: 2.2W
Case: WDFN8
Gate-source voltage: ±12V
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Semiconductor structure: common drain
Produkt ist nicht verfügbar
| FDMB2308PZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -7A; Idm: -30A; 2.2W; WDFN6
Mounting: SMD
Pulsed drain current: -30A
Power dissipation: 2.2W
Gate charge: 30nC
Polarisation: unipolar
Drain current: -7A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Semiconductor structure: common drain
Case: WDFN6
Gate-source voltage: ±12V
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -7A; Idm: -30A; 2.2W; WDFN6
Mounting: SMD
Pulsed drain current: -30A
Power dissipation: 2.2W
Gate charge: 30nC
Polarisation: unipolar
Drain current: -7A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Semiconductor structure: common drain
Case: WDFN6
Gate-source voltage: ±12V
Produkt ist nicht verfügbar
| BC818-40LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.3W
Case: SOT23
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
| BC808-25LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.5A; 0.3W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Frequency: 100MHz
Collector-emitter voltage: 25V
Current gain: 160...400
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.3W
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 0.5A; 0.3W; SOT23
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Frequency: 100MHz
Collector-emitter voltage: 25V
Current gain: 160...400
Collector current: 0.5A
Type of transistor: PNP
Power dissipation: 0.3W
Polarisation: bipolar
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)| FOD3180 |
|
Hersteller: ONSEMI
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 75ns
Turn-off time: 55ns
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Output voltage: 0...25V
Category: Optocouplers - others
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; DIP8; 15kV/μs
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Case: DIP8
Turn-on time: 75ns
Turn-off time: 55ns
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Output voltage: 0...25V
Produkt ist nicht verfügbar
| MJE172G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; TO225
Polarisation: bipolar
Kind of package: bulk
Case: TO225
Mounting: THT
Power dissipation: 15W
Frequency: 50MHz
Collector-emitter voltage: 100V
Collector current: 3A
Type of transistor: PNP
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 3A; 15W; TO225
Polarisation: bipolar
Kind of package: bulk
Case: TO225
Mounting: THT
Power dissipation: 15W
Frequency: 50MHz
Collector-emitter voltage: 100V
Collector current: 3A
Type of transistor: PNP
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 79+ | 0.92 EUR |
| 91+ | 0.79 EUR |
| 160+ | 0.45 EUR |
| 169+ | 0.42 EUR |
| H11F1M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7kV; DIP6; H11FXM
Mounting: THT
Case: DIP6
Manufacturer series: H11FXM
Insulation voltage: 7kV
Number of channels: 1
Turn-off time: 25µs
Turn-on time: 25µs
Type of optocoupler: optocoupler
Kind of output: transistor
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 7kV; DIP6; H11FXM
Mounting: THT
Case: DIP6
Manufacturer series: H11FXM
Insulation voltage: 7kV
Number of channels: 1
Turn-off time: 25µs
Turn-on time: 25µs
Type of optocoupler: optocoupler
Kind of output: transistor
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 6.58 EUR |
| 12+ | 6.09 EUR |
| 15+ | 4.78 EUR |
| 16+ | 4.52 EUR |
| 25+ | 4.5 EUR |
| NTMFS5C670NLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 440A; 1.8W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 440A
Power dissipation: 1.8W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 3.17 EUR |
| 36+ | 2.02 EUR |
| 47+ | 1.53 EUR |
| 50+ | 1.44 EUR |
| AMIS41682CANM1RG |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; transceiver; 5VDC; SMD; SO14; reel,tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 5V DC
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Case: SO14
Type of integrated circuit: digital
Category: Interfaces others - integrated circuits
Description: IC: digital; transceiver; 5VDC; SMD; SO14; reel,tape
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 5V DC
Kind of package: reel; tape
Kind of integrated circuit: transceiver
Case: SO14
Type of integrated circuit: digital
Produkt ist nicht verfügbar
| 1N4149TR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 50µA
Power dissipation: 0.5W
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 500mA; Ifsm: 4A; DO35; Ufmax: 1V; Ir: 50uA
Type of diode: switching
Mounting: THT
Max. off-state voltage: 100V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 2pF
Max. forward impulse current: 4A
Case: DO35
Max. forward voltage: 1V
Leakage current: 50µA
Power dissipation: 0.5W
Reverse recovery time: 4ns
auf Bestellung 1142 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 556+ | 0.13 EUR |
| 589+ | 0.12 EUR |
| 1051+ | 0.068 EUR |
| 1142+ | 0.063 EUR |
| MC74VHC245DTR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,line driver; Ch: 8; CMOS; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: VHC
Produkt ist nicht verfügbar
| MJF44H11G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 36W; TO220FP
Mounting: THT
Kind of package: tube
Case: TO220FP
Frequency: 50MHz
Collector-emitter voltage: 80V
Collector current: 10A
Type of transistor: NPN
Power dissipation: 36W
Polarisation: bipolar
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 36W; TO220FP
Mounting: THT
Kind of package: tube
Case: TO220FP
Frequency: 50MHz
Collector-emitter voltage: 80V
Collector current: 10A
Type of transistor: NPN
Power dissipation: 36W
Polarisation: bipolar
Produkt ist nicht verfügbar