| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 74LCX14BQX | ONSEMI |
 Category: Gates, invertersDescription: IC: digital; NOT; Ch: 6; IN: 1; SMD; DQFN14; 2÷3.6VDC; -40÷85°C; LCX Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: DQFN14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: LCX |
Produkt ist nicht verfügbar |
||||||||||||||
 |
74LCX14M | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; LCX; 2÷3.6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Manufacturer series: LCX Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 10µA Kind of input: with Schmitt trigger |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
74LCX14MTCX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Kind of input: with Schmitt trigger Family: LCX |
auf Bestellung 2497 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
74LCX14MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷3.6VDC; -40÷85°C; 10uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Kind of input: with Schmitt trigger Family: LCX |
Produkt ist nicht verfügbar |
|||||||||||||
 |
MC74LCX14DG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Kind of input: with Schmitt trigger Family: LCX |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
MC74LCX14DR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS; TTL Mounting: SMD Case: SO14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Kind of input: with Schmitt trigger Family: LCX |
Produkt ist nicht verfügbar |
|||||||||||||
 |
MC74LCX14DTG | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 10µA Kind of input: with Schmitt trigger Family: LCX |
auf Bestellung 316 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
MC74LCX14DTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; 10uA Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Number of inputs: 1 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Supply voltage: 2...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Quiescent current: 10µA Kind of input: with Schmitt trigger Family: LCX |
Produkt ist nicht verfügbar |
|||||||||||||
| NCP606MN28T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 500mA; DFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.24V Output voltage: 2.8V Output current: 0.5A Case: DFN6 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.5...6V Manufacturer series: NCP606 |
Produkt ist nicht verfügbar |
||||||||||||||
| NCP606MN33T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.22V Output voltage: 3.3V Output current: 0.5A Case: DFN6 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.5...6V Manufacturer series: NCP606 |
Produkt ist nicht verfügbar |
||||||||||||||
| NCP606MN50T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 500mA; DFN6; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.2V Output voltage: 5V Output current: 0.5A Case: DFN6 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 1.5...6V Manufacturer series: NCP606 |
Produkt ist nicht verfügbar |
||||||||||||||
| NCP606MNADJT2G | ONSEMI |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 500mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Output voltage: 1.25...5V Output current: 0.5A Case: DFN6 Mounting: SMD Operating temperature: -40...85°C Tolerance: ±1.5% Number of channels: 1 Input voltage: 1.5...6V Manufacturer series: NCP606 |
Produkt ist nicht verfügbar |
||||||||||||||
 |
BD239CTU | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 2A Power dissipation: 30W Case: TO220AB Current gain: 40 Mounting: THT Kind of package: tube |
Produkt ist nicht verfügbar |
|||||||||||||
 |
FPF2107 | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 0.4A; Ch: 1; P-Channel; SMD; SOT23-5 Supply voltage: 1.8...5.5V DC Mounting: SMD Output current: 0.4A Type of integrated circuit: power switch Kind of output: P-Channel Kind of package: reel; tape Case: SOT23-5 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 125mΩ |
Produkt ist nicht verfügbar |
|||||||||||||
| FCH125N65S3R0-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Pulsed drain current: 60A Power dissipation: 181W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.105Ω Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
| FCH165N65S3R0-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.3A Pulsed drain current: 47.5A Power dissipation: 154W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
| CAT24C08HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 400kHz Kind of interface: serial Memory: 8kb EEPROM Operating voltage: 1.7...5.5V Type of integrated circuit: EEPROM memory Interface: I2C Kind of memory: EEPROM Memory organisation: 1024x8bit Access time: 900ns |
Produkt ist nicht verfügbar |
||||||||||||||
| CAT25010HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; uDFN8 Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 20MHz Kind of interface: serial Memory: 1kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 128x8bit |
Produkt ist nicht verfügbar |
||||||||||||||
| CAT25080HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 20MHz Kind of interface: serial Memory: 8kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 1024x8bit |
Produkt ist nicht verfügbar |
||||||||||||||
| CAT25128HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 20MHz Kind of interface: serial Memory: 128kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 16kx8bit Access time: 140ns |
Produkt ist nicht verfügbar |
||||||||||||||
| CAT25160HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 20MHz Kind of interface: serial Memory: 16kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 2048x8bit Access time: 40ns |
Produkt ist nicht verfügbar |
||||||||||||||
| CAT25320HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8 Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 10MHz Kind of interface: serial Memory: 32kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 4kx8bit Access time: 40ns |
Produkt ist nicht verfügbar |
||||||||||||||
| CAT25640HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8 Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 20MHz Kind of interface: serial Memory: 64kb EEPROM Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 8kx8bit Access time: 40ns |
Produkt ist nicht verfügbar |
||||||||||||||
| CAT34C02HU4IGT4A | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz Case: uDFN8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Clock frequency: 400kHz Kind of interface: serial Memory: 2kb EEPROM Operating voltage: 1.7...5.5V Type of integrated circuit: EEPROM memory Interface: I2C Kind of memory: EEPROM Memory organisation: 256x8bit Access time: 900ns |
Produkt ist nicht verfügbar |
||||||||||||||
| NCP51402MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: -0.1...3.5V Output current: 3A Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: -40...125°C Application: for DDR memories Operating voltage: 0.5...1.8/2.375...5.5V |
Produkt ist nicht verfügbar |
||||||||||||||
| NCP51403MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: -0.1...3.5V Output current: 3A Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: max. 150°C Application: for DDR memories Operating voltage: 0.5...1.8/2.375...5.5V |
Produkt ist nicht verfügbar |
||||||||||||||
| NCP51510MNTAG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10 Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: 0.5...1.5V Output current: 3A Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: -40...125°C Application: for DDR memories Operating voltage: 1.1...3.6/2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||
| NCV51198PDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: 0.675...1.35V Output current: 1.5A Mounting: SMD Case: SO8-EP Number of channels: 1 Operating temperature: -40...125°C Application: automotive industry; for DDR memories Operating voltage: 1.35...2.5/2.2...5.5V |
Produkt ist nicht verfügbar |
||||||||||||||
| NCV51199PDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: 0.75...2.5V Output current: 2A Mounting: SMD Case: SO8-EP Number of channels: 1 Operating temperature: max. 125°C Application: automotive industry; for DDR memories Operating voltage: 1.5...5.5/4.75...5.5V |
Produkt ist nicht verfügbar |
||||||||||||||
| NCV51400MNTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: -0.1...3.5V Output current: 3A Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: max. 150°C Application: automotive industry; for DDR memories Operating voltage: 0.5...1.8/2.375...5.5V |
Produkt ist nicht verfügbar |
||||||||||||||
| NCV51400MWTXG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: -0.1...3.5V Output current: 3A Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: max. 150°C Application: automotive industry; for DDR memories Operating voltage: 0.5...1.8/2.375...5.5V |
Produkt ist nicht verfügbar |
||||||||||||||
| NCV51510MNTAG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10 Type of integrated circuit: PMIC Kind of integrated circuit: DDR memory termination regulator Output voltage: 0.5...1.5V Output current: 3A Mounting: SMD Case: DFN10 Number of channels: 1 Operating temperature: -40...125°C Application: automotive industry; for DDR memories Operating voltage: 1.1...3.6/2.7...3.6V |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
FCP067N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 28A Pulsed drain current: 110A Power dissipation: 312W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 67mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
|||||||||||||
| NTH027N65S3F-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23mΩ Mounting: THT Gate charge: 259nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
| NTHL027N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 60A Pulsed drain current: 187.5A Power dissipation: 595W Case: TO247 Gate-source voltage: ±30V On-state resistance: 27.4mΩ Mounting: THT Gate charge: 225nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||||
 |
1SMB5919BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 5.6V; 66.9mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 5.6V Zener current: 66.9mA Mounting: SMD Tolerance: ±5% Zener resistance: 2Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
auf Bestellung 8660 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
MCT2EM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Case: DIP6 Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 20%@10mA Type of optocoupler: optocoupler Collector-emitter voltage: 30V |
auf Bestellung 492 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
MJD127G | ONSEMI |
Category: PNP SMD Darlington transistors Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 100...12000 Mounting: SMD Kind of package: tube Frequency: 4MHz |
auf Bestellung 302 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
MCT9001 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8 Collector-emitter voltage: 55V Number of channels: 2 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@5mA Type of optocoupler: optocoupler Mounting: THT Case: DIP8 |
Produkt ist nicht verfügbar |
|||||||||||||
| BAS21M3T5G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT723; Ufmax: 1.25V; 640mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOT723 Max. forward voltage: 1.25V Max. forward impulse current: 625mA Leakage current: 0.1mA Power dissipation: 640mW Kind of package: reel; tape |
Produkt ist nicht verfügbar |
||||||||||||||
 |
BAS21SLT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1.25V; 300mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.225A Reverse recovery time: 50ns Semiconductor structure: double series Capacitance: 5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 625mA Power dissipation: 0.3W Kind of package: reel; tape |
auf Bestellung 135 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
| SBAS21DW5T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double independent Capacitance: 5pF Case: SC88A Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.385W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
||||||||||||||
| SBAS21DW5T3G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Reverse recovery time: 50ns Semiconductor structure: double independent Capacitance: 5pF Case: SC88A Max. forward voltage: 1.25V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.385W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
||||||||||||||
 |
NSVBAS21HT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW Type of diode: switching Mounting: SMD Max. off-state voltage: 250V Load current: 0.2A Max. load current: 0.5A Reverse recovery time: 50ns Semiconductor structure: single diode Capacitance: 5pF Case: SOD323 Max. forward voltage: 1.25V Max. forward impulse current: 2.5A Power dissipation: 0.2W Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
MC33204DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 2.2MHz; Ch: 4; SO14; reel,tape Mounting: SMT Case: SO14 Operating temperature: -40...105°C Kind of package: reel; tape Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC Type of integrated circuit: operational amplifier Number of channels: 4 Bandwidth: 2.2MHz Input offset voltage: 10mV Integrated circuit features: rail-to-rail Slew rate: 1V/μs |
Produkt ist nicht verfügbar |
|||||||||||||
 |
KSC2383YTA | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92L Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 1A Power dissipation: 0.9W Case: TO92L Current gain: 160...320 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
Produkt ist nicht verfügbar |
|||||||||||||
| NRVUD320VT4G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; Ufmax: 0.95V; Ifsm: 75A Mounting: SMD Application: automotive industry Max. forward impulse current: 75A Max. forward voltage: 0.95V Max. off-state voltage: 200V Load current: 3A Max. load current: 6A Kind of package: reel; tape Semiconductor structure: single diode Case: DPAK Type of diode: rectifying Reverse recovery time: 35ns |
Produkt ist nicht verfügbar |
||||||||||||||
| 74ALVC16245MTDX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; bidirectional,transceiver; Ch: 16; SMD; TSSOP48; 40uA Type of integrated circuit: digital Kind of integrated circuit: bidirectional; transceiver Number of channels: 16 Supply voltage: 1.65...3.6V DC Mounting: SMD Case: TSSOP48 Operating temperature: -40...85°C Kind of package: reel; tape Kind of output: 3-state Quiescent current: 40µA |
Produkt ist nicht verfügbar |
||||||||||||||
 |
MC78M05CDTRKG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; MC78M00 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 0.5A Case: DPAK Mounting: SMD Manufacturer series: MC78M00 Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 7...20V |
Produkt ist nicht verfügbar |
|||||||||||||
 |
MC78M05CTG | ONSEMI |
 Category: Unregulated voltage regulatorsDescription: IC: voltage regulator; linear,fixed; 5V; 0.5A; TO220AB; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 5V Output current: 0.5A Case: TO220AB Mounting: THT Manufacturer series: MC78M00 Kind of package: tube Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Heatsink thickness: 0.508...0.61mm Input voltage: 7...20V |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
BC847CWT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
|||||||||||||
 |
BCP53T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 435 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
|
SBCP53-10T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223 Current gain: 63...160 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
SBCP53T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1.5A Power dissipation: 1.5W Case: SOT223 Current gain: 25...250 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz Application: automotive industry |
auf Bestellung 895 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
GBU4A | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
FDP42AN15A0 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 150V Drain current: 24A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.107Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 98 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
| NCP57152DSADJR4G | ONSEMI |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 1.5A Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.52V Output voltage: 1.24...13V Output current: 1.5A Case: D2PAK-5 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2.5% Number of channels: 1 Input voltage: 1.8...13.5V Manufacturer series: NCP57152 |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
FDN5630 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3 Mounting: SMD Drain-source voltage: 60V Drain current: 1.7A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: logic level Gate charge: 10nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Case: SuperSOT-3 |
auf Bestellung 4575 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
BAT54SWT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: double series Capacitance: 7.6pF Case: SOT323 Max. forward voltage: 0.8V Max. load current: 0.3A Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
H11G2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Darlington Insulation voltage: 4.17kV CTR@If: 100%@10mA Collector-emitter voltage: 80V Case: DIP6 |
auf Bestellung 722 Stücke: Lieferzeit 14-21 Tag (e) |
|
| 74LCX14BQX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; DQFN14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: DQFN14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; DQFN14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: DQFN14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Produkt ist nicht verfügbar
| 74LCX14M |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; LCX; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; LCX; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Manufacturer series: LCX
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Kind of input: with Schmitt trigger
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 2.86 EUR |
| 74LCX14MTCX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
auf Bestellung 2497 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 73+ | 0.99 EUR |
| 147+ | 0.49 EUR |
| 159+ | 0.45 EUR |
| 168+ | 0.43 EUR |
| 300+ | 0.41 EUR |
| 74LCX14MX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
Produkt ist nicht verfügbar
| MC74LCX14DG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Kind of input: with Schmitt trigger
Family: LCX
Produkt ist nicht verfügbar
| MC74LCX14DR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
Produkt ist nicht verfügbar
| MC74LCX14DTG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
auf Bestellung 316 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 70+ | 1.03 EUR |
| 85+ | 0.84 EUR |
| 141+ | 0.51 EUR |
| 149+ | 0.48 EUR |
| MC74LCX14DTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; TSSOP14; 2÷3.6VDC; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Kind of input: with Schmitt trigger
Family: LCX
Produkt ist nicht verfügbar
| NCP606MN28T2G |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 500mA; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 2.8V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 500mA; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.24V
Output voltage: 2.8V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
Produkt ist nicht verfügbar
| NCP606MN33T2G |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 3.3V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 500mA; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 3.3V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
Produkt ist nicht verfügbar
| NCP606MN50T2G |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 500mA; DFN6; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 5V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 500mA; DFN6; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.2V
Output voltage: 5V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
Produkt ist nicht verfügbar
| NCP606MNADJT2G |
|
Hersteller: ONSEMI
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 500mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...5V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷5V; 500mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Output voltage: 1.25...5V
Output current: 0.5A
Case: DFN6
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±1.5%
Number of channels: 1
Input voltage: 1.5...6V
Manufacturer series: NCP606
Produkt ist nicht verfügbar
| BD239CTU |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 100V; 2A; 30W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 2A
Power dissipation: 30W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
| FPF2107 |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; P-Channel; SMD; SOT23-5
Supply voltage: 1.8...5.5V DC
Mounting: SMD
Output current: 0.4A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: SOT23-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 125mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.4A; Ch: 1; P-Channel; SMD; SOT23-5
Supply voltage: 1.8...5.5V DC
Mounting: SMD
Output current: 0.4A
Type of integrated circuit: power switch
Kind of output: P-Channel
Kind of package: reel; tape
Case: SOT23-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 125mΩ
Produkt ist nicht verfügbar
| FCH125N65S3R0-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15A; Idm: 60A; 181W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 181W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.105Ω
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FCH165N65S3R0-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.3A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12.3A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| CAT24C08HU4I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 400kHz
Kind of interface: serial
Memory: 8kb EEPROM
Operating voltage: 1.7...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of memory: EEPROM
Memory organisation: 1024x8bit
Access time: 900ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1024x8bit; 1.7÷5.5V; 400kHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 400kHz
Kind of interface: serial
Memory: 8kb EEPROM
Operating voltage: 1.7...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of memory: EEPROM
Memory organisation: 1024x8bit
Access time: 900ns
Produkt ist nicht verfügbar
| CAT25010HU4I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 1kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 1kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128x8bit
Produkt ist nicht verfügbar
| CAT25080HU4I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 8kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 1024x8bit
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 8kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 1024x8bit
Produkt ist nicht verfügbar
| CAT25128HU4I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 128kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 140ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 128kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 140ns
Produkt ist nicht verfügbar
| CAT25160HU4I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 16kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 2048x8bit
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; SPI; 2048x8bit; 1.8÷5.5V; 20MHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 16kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 2048x8bit
Access time: 40ns
Produkt ist nicht verfügbar
| CAT25320HU4I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 10MHz
Kind of interface: serial
Memory: 32kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 4kx8bit
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 10MHz
Kind of interface: serial
Memory: 32kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 4kx8bit
Access time: 40ns
Produkt ist nicht verfügbar
| CAT25640HU4I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 64kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 8kx8bit
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 20MHz
Kind of interface: serial
Memory: 64kb EEPROM
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 8kx8bit
Access time: 40ns
Produkt ist nicht verfügbar
| CAT34C02HU4IGT4A |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 400kHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating voltage: 1.7...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 900ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Case: uDFN8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Clock frequency: 400kHz
Kind of interface: serial
Memory: 2kb EEPROM
Operating voltage: 1.7...5.5V
Type of integrated circuit: EEPROM memory
Interface: I2C
Kind of memory: EEPROM
Memory organisation: 256x8bit
Access time: 900ns
Produkt ist nicht verfügbar
| NCP51402MNTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: -0.1...3.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: -0.1...3.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V
Produkt ist nicht verfügbar
| NCP51403MNTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: -0.1...3.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: -0.1...3.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V
Produkt ist nicht verfügbar
| NCP51510MNTAG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.5...1.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: for DDR memories
Operating voltage: 1.1...3.6/2.7...3.6V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.5...1.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: for DDR memories
Operating voltage: 1.1...3.6/2.7...3.6V
Produkt ist nicht verfügbar
| NCV51198PDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.675...1.35V
Output current: 1.5A
Mounting: SMD
Case: SO8-EP
Number of channels: 1
Operating temperature: -40...125°C
Application: automotive industry; for DDR memories
Operating voltage: 1.35...2.5/2.2...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.675...1.35V
Output current: 1.5A
Mounting: SMD
Case: SO8-EP
Number of channels: 1
Operating temperature: -40...125°C
Application: automotive industry; for DDR memories
Operating voltage: 1.35...2.5/2.2...5.5V
Produkt ist nicht verfügbar
| NCV51199PDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.75...2.5V
Output current: 2A
Mounting: SMD
Case: SO8-EP
Number of channels: 1
Operating temperature: max. 125°C
Application: automotive industry; for DDR memories
Operating voltage: 1.5...5.5/4.75...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.75...2.5V
Output current: 2A
Mounting: SMD
Case: SO8-EP
Number of channels: 1
Operating temperature: max. 125°C
Application: automotive industry; for DDR memories
Operating voltage: 1.5...5.5/4.75...5.5V
Produkt ist nicht verfügbar
| NCV51400MNTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: -0.1...3.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: automotive industry; for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: -0.1...3.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: automotive industry; for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V
Produkt ist nicht verfügbar
| NCV51400MWTXG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: -0.1...3.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: automotive industry; for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: -0.1...3.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: automotive industry; for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V
Produkt ist nicht verfügbar
| NCV51510MNTAG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.5...1.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: automotive industry; for DDR memories
Operating voltage: 1.1...3.6/2.7...3.6V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.5÷1.5V; DFN10
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output voltage: 0.5...1.5V
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: automotive industry; for DDR memories
Operating voltage: 1.1...3.6/2.7...3.6V
Produkt ist nicht verfügbar
| FCP067N65S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 28A; Idm: 110A; 312W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 312W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTH027N65S3F-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 259nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTHL027N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 60A; Idm: 187.5A; 595W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Pulsed drain current: 187.5A
Power dissipation: 595W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 27.4mΩ
Mounting: THT
Gate charge: 225nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 1SMB5919BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; 66.9mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Zener current: 66.9mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 2Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.6V; 66.9mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Zener current: 66.9mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 2Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
auf Bestellung 8660 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 132+ | 0.54 EUR |
| 186+ | 0.39 EUR |
| 246+ | 0.29 EUR |
| 379+ | 0.19 EUR |
| 477+ | 0.15 EUR |
| 506+ | 0.14 EUR |
| MCT2EM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 30V
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Case: DIP6
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 20%@10mA
Type of optocoupler: optocoupler
Collector-emitter voltage: 30V
auf Bestellung 492 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 141+ | 0.51 EUR |
| 186+ | 0.38 EUR |
| 211+ | 0.34 EUR |
| 253+ | 0.28 EUR |
| 268+ | 0.27 EUR |
| MJD127G |
|
Hersteller: ONSEMI
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 100...12000
Mounting: SMD
Kind of package: tube
Frequency: 4MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 100...12000
Mounting: SMD
Kind of package: tube
Frequency: 4MHz
auf Bestellung 302 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 1.14 EUR |
| 69+ | 1.05 EUR |
| 90+ | 0.8 EUR |
| 95+ | 0.76 EUR |
| 97+ | 0.74 EUR |
| MCT9001 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Collector-emitter voltage: 55V
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 2; OUT: transistor; Uinsul: 5kV; Uce: 55V; DIP8
Collector-emitter voltage: 55V
Number of channels: 2
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP8
Produkt ist nicht verfügbar
| BAS21M3T5G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT723; Ufmax: 1.25V; 640mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT723
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Leakage current: 0.1mA
Power dissipation: 640mW
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT723; Ufmax: 1.25V; 640mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT723
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Leakage current: 0.1mA
Power dissipation: 640mW
Kind of package: reel; tape
Produkt ist nicht verfügbar
| BAS21SLT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: double series
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Power dissipation: 0.3W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.225A; 50ns; SOT23; Ufmax: 1.25V; 300mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.225A
Reverse recovery time: 50ns
Semiconductor structure: double series
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 625mA
Power dissipation: 0.3W
Kind of package: reel; tape
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 135+ | 0.53 EUR |
| SBAS21DW5T1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
| SBAS21DW5T3G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SC88A; Ufmax: 1.25V; 385mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: double independent
Capacitance: 5pF
Case: SC88A
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
| NSVBAS21HT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOD323; Ufmax: 1.25V; 200mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Max. load current: 0.5A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOD323
Max. forward voltage: 1.25V
Max. forward impulse current: 2.5A
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
| MC33204DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 4; SO14; reel,tape
Mounting: SMT
Case: SO14
Operating temperature: -40...105°C
Kind of package: reel; tape
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Type of integrated circuit: operational amplifier
Number of channels: 4
Bandwidth: 2.2MHz
Input offset voltage: 10mV
Integrated circuit features: rail-to-rail
Slew rate: 1V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Ch: 4; SO14; reel,tape
Mounting: SMT
Case: SO14
Operating temperature: -40...105°C
Kind of package: reel; tape
Voltage supply range: ± 900mV DC...6V DC; 1.8...12V DC
Type of integrated circuit: operational amplifier
Number of channels: 4
Bandwidth: 2.2MHz
Input offset voltage: 10mV
Integrated circuit features: rail-to-rail
Slew rate: 1V/μs
Produkt ist nicht verfügbar
| KSC2383YTA |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92L
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 1A; 0.9W; TO92L
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 1A
Power dissipation: 0.9W
Case: TO92L
Current gain: 160...320
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Produkt ist nicht verfügbar
| NRVUD320VT4G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; Ufmax: 0.95V; Ifsm: 75A
Mounting: SMD
Application: automotive industry
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Max. off-state voltage: 200V
Load current: 3A
Max. load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DPAK
Type of diode: rectifying
Reverse recovery time: 35ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; DPAK; Ufmax: 0.95V; Ifsm: 75A
Mounting: SMD
Application: automotive industry
Max. forward impulse current: 75A
Max. forward voltage: 0.95V
Max. off-state voltage: 200V
Load current: 3A
Max. load current: 6A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DPAK
Type of diode: rectifying
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
| 74ALVC16245MTDX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 16; SMD; TSSOP48; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 16
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Quiescent current: 40µA
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 16; SMD; TSSOP48; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 16
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: TSSOP48
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of output: 3-state
Quiescent current: 40µA
Produkt ist nicht verfügbar
| MC78M05CDTRKG |
|
Hersteller: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; DPAK; SMD; MC78M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC78M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 7...20V
Produkt ist nicht verfügbar
| MC78M05CTG | |
|
Hersteller: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 7...20V
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 5V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC78M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
Input voltage: 7...20V
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 5.11 EUR |
| BC847CWT3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.2W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
| BCP53T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 435 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 167+ | 0.43 EUR |
| 211+ | 0.34 EUR |
| 304+ | 0.24 EUR |
| 345+ | 0.21 EUR |
| 350+ | 0.2 EUR |
| 368+ | 0.19 EUR |
| SBCP53-10T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 63...160
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 2.39 EUR |
| SBCP53T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 1.5A; 1.5W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Application: automotive industry
auf Bestellung 895 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 193+ | 0.37 EUR |
| 363+ | 0.2 EUR |
| 385+ | 0.19 EUR |
| GBU4A |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
| FDP42AN15A0 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.107Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 98 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 2.95 EUR |
| 36+ | 2.03 EUR |
| 38+ | 1.92 EUR |
| NCP57152DSADJR4G |
|
Hersteller: ONSEMI
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 1.5A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.52V
Output voltage: 1.24...13V
Output current: 1.5A
Case: D2PAK-5
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 1.8...13.5V
Manufacturer series: NCP57152
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.24÷13V; 1.5A
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.52V
Output voltage: 1.24...13V
Output current: 1.5A
Case: D2PAK-5
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2.5%
Number of channels: 1
Input voltage: 1.8...13.5V
Manufacturer series: NCP57152
Produkt ist nicht verfügbar
| FDN5630 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 1.7A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SuperSOT-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
Mounting: SMD
Drain-source voltage: 60V
Drain current: 1.7A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SuperSOT-3
auf Bestellung 4575 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 132+ | 0.54 EUR |
| 169+ | 0.42 EUR |
| 358+ | 0.2 EUR |
| 379+ | 0.19 EUR |
| BAT54SWT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 7.6pF
Case: SOT323
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: double series
Capacitance: 7.6pF
Case: SOT323
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 7.15 EUR |
| H11G2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 80V
Case: DIP6
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: Darlington; Uinsul: 4.17kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 4.17kV
CTR@If: 100%@10mA
Collector-emitter voltage: 80V
Case: DIP6
auf Bestellung 722 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 58+ | 1.24 EUR |
| 94+ | 0.76 EUR |
| 109+ | 0.66 EUR |
| 135+ | 0.53 EUR |
| 143+ | 0.5 EUR |
| 500+ | 0.49 EUR |