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FCH165N65S3R0-F155 onsemi
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Description: MOSFET N-CH 650V 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V
Power Dissipation (Max): 154W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.06 EUR |
10+ | 5.92 EUR |
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Technische Details FCH165N65S3R0-F155 onsemi
Description: MOSFET N-CH 650V 19A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 165mOhm @ 9.5A, 10V, Power Dissipation (Max): 154W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.9mA, Supplier Device Package: TO-247-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V.
Weitere Produktangebote FCH165N65S3R0-F155 nach Preis ab 4.88 EUR bis 10.01 EUR
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FCH165N65S3R0-F155 | Hersteller : onsemi |
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auf Bestellung 427 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH165N65S3R0-F155 | Hersteller : ONSEMI |
![]() tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1350 Stücke: Lieferzeit 14-21 Tag (e) |
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FCH165N65S3R0-F155 | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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FCH165N65S3R0-F155 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.3A Pulsed drain current: 47.5A Power dissipation: 154W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FCH165N65S3R0-F155 | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12.3A Pulsed drain current: 47.5A Power dissipation: 154W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |