Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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ISL9V5036S3ST | ONSEMI |
![]() Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 390V Collector current: 31A Power dissipation: 250W Case: D2PAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; logic level Application: ignition systems |
Produkt ist nicht verfügbar |
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BCP56T3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 1.5W Case: SOT223 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 130MHz |
Produkt ist nicht verfügbar |
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FDB3632 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 80A Power dissipation: 310W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDMA1028NZ-F021 | ONSEMI |
![]() Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; Idm: 6A; 1.4W Mounting: SMD Kind of package: reel; tape Drain current: 3.7A Kind of channel: enhanced Drain-source voltage: 20V Type of transistor: N-MOSFET x2 Case: MicroFET On-state resistance: 90mΩ Gate-source voltage: ±12V Pulsed drain current: 6A Power dissipation: 1.4W Gate charge: 6nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
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ESD9L3.3ST5G | ONSEMI |
![]() Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; Ch: 1; 0.5÷0.9pF Type of diode: TVS Peak pulse power dissipation: 0.15W Max. off-state voltage: 3.3V Breakdown voltage: 4.8V Case: SOD923 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 Capacitance: 0.5...0.9pF |
Produkt ist nicht verfügbar |
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BC846CLT1G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.3W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 65V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 4720 Stücke: Lieferzeit 14-21 Tag (e) |
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FSA2268L10X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; OUT: SPDT x2; TTL Type of integrated circuit: analog switch Number of channels: 2 Case: MicroPak10 Supply voltage: 1.65...4.3V DC Mounting: SMD Operating temperature: -40...85°C Kind of output: SPDT x2 Technology: TTL |
Produkt ist nicht verfügbar |
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FSA2268UMX | ONSEMI |
![]() Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.3VDC; reel,tape; 500nA; TTL Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Type of integrated circuit: analog switch Number of channels: 2 Quiescent current: 500nA Kind of output: SPDT x2 Technology: TTL Case: UMLP10 Supply voltage: 1.65...4.3V DC |
Produkt ist nicht verfügbar |
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NCP456RFCCT2G | ONSEMI |
![]() Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; WLCSP6 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2A Case: WLCSP6 Mounting: SMD On-state resistance: 50mΩ Number of channels: 1 Kind of package: reel; tape Supply voltage: 0.75...5.5V DC Active logical level: high Control voltage: 0...5.5V DC Kind of output: N-Channel |
Produkt ist nicht verfügbar |
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NTB25P06T4G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -27.5A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±15V On-state resistance: 75mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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NTD14N03RT4G | ONSEMI |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 25V; 2.5A; Idm: 28A; 20.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 2.5A Pulsed drain current: 28A Power dissipation: 20.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.117Ω Mounting: SMD Gate charge: 1.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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NTD20N03L27T4G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 16A Power dissipation: 74W Case: DPAK Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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NTD25P03LT4G | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -25A Power dissipation: 75W Case: DPAK Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 3409 Stücke: Lieferzeit 14-21 Tag (e) |
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NTD4302T4G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 75W; DPAK Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 43A Power dissipation: 75W Case: DPAK Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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NTD4804NT4G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 124A; Idm: 230A; 107W; DPAK Mounting: SMD Power dissipation: 107W Polarisation: unipolar Kind of package: reel; tape Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 230A Case: DPAK Drain-source voltage: 30V Drain current: 124A On-state resistance: 4.7mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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NTD4805NT4G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 73A; Idm: 175A; 79W; DPAK Mounting: SMD Power dissipation: 79W Polarisation: unipolar Kind of package: reel; tape Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 175A Case: DPAK Drain-source voltage: 30V Drain current: 73A On-state resistance: 6mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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NTD4808N-1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 126A; 54.6W; IPAK Mounting: THT Power dissipation: 54.6W Polarisation: unipolar Kind of package: tube Gate charge: 11.3nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 126A Case: IPAK Drain-source voltage: 30V Drain current: 49A On-state resistance: 10.3mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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BAT54AWT1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 7.6pF Case: SOT323 Max. forward voltage: 0.8V Max. load current: 0.3A Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
auf Bestellung 8150 Stücke: Lieferzeit 14-21 Tag (e) |
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SBAT54ALT1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT23; 5ns; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Case: SOT23 Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.225W |
Produkt ist nicht verfügbar |
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SBAT54ALT3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT23; 5ns; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Case: SOT23 Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.225W |
Produkt ist nicht verfügbar |
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SBAT54AWT1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: common anode; double Capacitance: 10pF Case: SOT323 Max. forward voltage: 0.8V Max. load current: 0.3A Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: reel; tape Power dissipation: 0.2W |
Produkt ist nicht verfügbar |
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NSR0130P2T5G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: SOD923 Max. off-state voltage: 30V Max. forward voltage: 0.525V Load current: 0.1A Semiconductor structure: single diode Max. forward impulse current: 1A |
auf Bestellung 6240 Stücke: Lieferzeit 14-21 Tag (e) |
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NSR0240V2T1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; reel,tape Application: automotive industry Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: SOD523 Max. off-state voltage: 40V Max. forward voltage: 0.7V Load current: 0.25A Semiconductor structure: single diode Max. forward impulse current: 2A |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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NSR0340V2T1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; reel,tape Application: automotive industry Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: SOD523 Max. off-state voltage: 40V Max. forward voltage: 0.7V Load current: 0.25A Semiconductor structure: single diode Max. forward impulse current: 1A |
Produkt ist nicht verfügbar |
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NSR05F40NXT5G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; DSN0402-2; reel,tape Type of diode: Schottky rectifying Max. forward impulse current: 1A Semiconductor structure: single diode Mounting: SMD Case: DSN0402-2 Max. off-state voltage: 40V Kind of package: reel; tape Max. forward voltage: 0.46V Load current: 0.5A |
Produkt ist nicht verfügbar |
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NSR0620P2T5G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD923; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: SOD923 Max. off-state voltage: 20V Max. forward voltage: 0.52V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 1A |
auf Bestellung 4925 Stücke: Lieferzeit 14-21 Tag (e) |
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NSR07540SLT1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 40V; 1.5A; SOT23-3; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Case: SOT23-3 Max. off-state voltage: 40V Load current: 1.5A Semiconductor structure: single diode Max. forward impulse current: 8A |
Produkt ist nicht verfügbar |
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NSR20F30NXT5G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMD; 30V; 2A; DSN0603-2; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 2A Max. load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.48V Case: DSN0603-2 Kind of package: reel; tape Max. forward impulse current: 28A |
auf Bestellung 1161 Stücke: Lieferzeit 14-21 Tag (e) |
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UMC3NT1G | ONSEMI |
![]() Description: Transistor: NPN / PNP; bipolar; BRT; 50V; 0.1A; 0.15W; SOT353 Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT353 Current gain: 35...60 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common base-collector Base resistor: 10/10kΩ Base-emitter resistor: 10/10kΩ |
Produkt ist nicht verfügbar |
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ESD9B5.0ST5G | ONSEMI |
![]() Description: Diode: TVS; 0.3W; 7.8V; 15A; bidirectional; SOD923; reel,tape; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.3W Max. off-state voltage: 5V Breakdown voltage: 7.8V Max. forward impulse current: 15A Semiconductor structure: bidirectional Case: SOD923 Mounting: SMD Leakage current: 0.1µA Kind of package: reel; tape Features of semiconductor devices: ESD protection Number of channels: 1 |
auf Bestellung 1508 Stücke: Lieferzeit 14-21 Tag (e) |
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BC857CWT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.3W Case: SOT23 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
auf Bestellung 1565 Stücke: Lieferzeit 14-21 Tag (e) |
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SBC857CLT1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225/0.3W Case: SOT23 Current gain: 270...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
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MC74VHC138DR2G | ONSEMI |
![]() Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS; SMD; SOIC16; VHC Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder Number of channels: 1 Number of inputs: 6 Technology: CMOS Mounting: SMD Case: SOIC16 Manufacturer series: VHC Supply voltage: 2...5.5V DC Family: VHC Kind of package: reel; tape Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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MC74VHC138DTR2G | ONSEMI |
![]() Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS; SMD; TSSOP16 Type of integrated circuit: digital Kind of integrated circuit: 3 to 8 line; decoder Number of channels: 1 Number of inputs: 6 Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: VHC Supply voltage: 2...5.5V DC Family: VHC Kind of package: reel; tape Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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FQT13N06LTF | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.24A Pulsed drain current: 11.2A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 6.4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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1SMB5931BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 18V; 20.8mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 18V Zener current: 20.8mA Mounting: SMD Tolerance: ±5% Zener resistance: 12Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
auf Bestellung 3490 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5932BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 20V; 18.7mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 20V Zener current: 18.7mA Mounting: SMD Tolerance: ±5% Zener resistance: 14Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
auf Bestellung 4555 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5934BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 24V; 15.6mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 24V Zener current: 15.6mA Mounting: SMD Tolerance: ±5% Zener resistance: 19Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
auf Bestellung 3547 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5937BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 33V; 11.4mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 33V Zener current: 11.4mA Mounting: SMD Tolerance: ±5% Zener resistance: 33Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
auf Bestellung 2044 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5938BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 36V; 10.4mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 36V Zener current: 10.4mA Mounting: SMD Tolerance: ±5% Zener resistance: 38Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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NCP81274MNTXG | ONSEMI |
![]() Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck Type of integrated circuit: PMIC Case: QFN40 Mounting: SMD Operating temperature: -10...100°C Topology: buck Frequency: 250...1200kHz Input voltage: 4.5...20V |
Produkt ist nicht verfügbar |
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MC14040BDG | ONSEMI |
![]() Description: IC: digital; 12bit,binary counter; Ch: 1; IN: 2; CMOS; SMD; SOIC16 Type of integrated circuit: digital Case: SOIC16 Mounting: SMD Kind of package: tube Operating temperature: -55...125°C Number of channels: 1 Supply voltage: 3...18V DC Technology: CMOS Kind of integrated circuit: 12bit; binary counter Number of inputs: 2 |
Produkt ist nicht verfügbar |
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MC14040BDR2G | ONSEMI |
![]() Description: IC: digital; 12bit,binary counter; CMOS; SMD; SO16; 3÷18VDC Type of integrated circuit: digital Case: SO16 Mounting: SMD Operating temperature: -55...125°C Supply voltage: 3...18V DC Technology: CMOS Kind of integrated circuit: 12bit; binary counter |
Produkt ist nicht verfügbar |
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MC14040BDTR2G | ONSEMI |
![]() Description: IC: digital; 12bit,binary counter; Ch: 1; IN: 2; CMOS; SMD; TSSOP16 Type of integrated circuit: digital Case: TSSOP16 Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Number of channels: 1 Supply voltage: 3...18V DC Technology: CMOS Kind of integrated circuit: 12bit; binary counter Number of inputs: 2 |
Produkt ist nicht verfügbar |
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MC14042BDR2G | ONSEMI |
![]() Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: latch Number of channels: 4 Technology: CMOS Supply voltage: 3...18V DC Mounting: SMD Case: SOIC16 Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MC14044BDG | ONSEMI |
![]() Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; tube Kind of package: tube Supply voltage: 3...18V DC Type of integrated circuit: digital Number of channels: 4 Kind of output: 3-state Trigger: level-triggered Kind of integrated circuit: RS latch Mounting: SMD Operating temperature: -40...85°C Case: SO16 |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14044BDR2G | ONSEMI |
![]() Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16 Type of integrated circuit: digital Case: SOIC16 Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Number of channels: 4 Supply voltage: 3...18V DC Technology: CMOS Kind of integrated circuit: RS latch Number of inputs: 2 |
Produkt ist nicht verfügbar |
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1SMB5941BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 47V; 8mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 47V Zener current: 8mA Mounting: SMD Tolerance: ±5% Zener resistance: 67Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
auf Bestellung 3040 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5943BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 56V; 6.7mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 56V Zener current: 6.7mA Mounting: SMD Tolerance: ±5% Zener resistance: 86Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
auf Bestellung 3040 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5946BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 75V; 5mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 75V Zener current: 5mA Mounting: SMD Tolerance: ±5% Zener resistance: 140Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
auf Bestellung 1495 Stücke: Lieferzeit 14-21 Tag (e) |
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1SMB5948BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 91V; 4.1mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 91V Zener current: 4.1mA Mounting: SMD Tolerance: ±5% Zener resistance: 200Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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1SMB5949BT3G | ONSEMI |
![]() Description: Diode: Zener; 3W; 100V; 3.7mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 100V Zener current: 3.7mA Mounting: SMD Tolerance: ±5% Zener resistance: 250Ω Kind of package: reel; tape Case: SMB Semiconductor structure: single diode |
auf Bestellung 282 Stücke: Lieferzeit 14-21 Tag (e) |
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MJ11033G | ONSEMI |
![]() ![]() Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3 Mounting: THT Collector current: 50A Type of transistor: PNP Power dissipation: 300W Polarisation: bipolar Kind of package: in-tray Kind of transistor: Darlington Case: TO3 Collector-emitter voltage: 120V |
auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
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SMS05CT1G | ONSEMI |
![]() Description: Diode: TVS array; 6.2÷7.2V; 24A; 350W; common anode; TSOP6; Ch: 5 Type of diode: TVS array Breakdown voltage: 6.2...7.2V Max. forward impulse current: 24A Peak pulse power dissipation: 350W Semiconductor structure: common anode Mounting: SMD Case: TSOP6 Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Number of channels: 5 Kind of package: reel; tape |
auf Bestellung 1279 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP803SN308T1G | ONSEMI |
![]() Description: IC: Supervisor Integrated Circuit; open drain; 1.2÷5.5VDC Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.2...5.5V DC Case: SOT23-3 Operating temperature: -40...105°C Mounting: SMD DC supply current: 2.5µA Maximum output current: 20mA Threshold on-voltage: 3.08V |
Produkt ist nicht verfügbar |
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MC74HC4852ADR2G | ONSEMI |
![]() Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 2÷6VDC Type of integrated circuit: analog switch Mounting: SMD Number of channels: 2 Case: SO16 Quiescent current: 40µA Operating temperature: -55...125°C Kind of package: reel; tape Kind of integrated circuit: demultiplexer; multiplexer Manufacturer series: HC Technology: CMOS Supply voltage: 2...6V DC |
Produkt ist nicht verfügbar |
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MC74HC4852ADTR2G | ONSEMI |
![]() Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; TSSOP16; 40uA Type of integrated circuit: analog switch Mounting: SMD Number of channels: 2 Case: TSSOP16 Quiescent current: 40µA Operating temperature: -55...125°C Kind of package: reel; tape Kind of integrated circuit: demultiplexer; multiplexer Manufacturer series: HC Technology: CMOS Supply voltage: 2...6V DC |
Produkt ist nicht verfügbar |
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NV24C04DTVLT3G | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Clock frequency: 1MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
Produkt ist nicht verfügbar |
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NV24C04MUW3VLTBG | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Clock frequency: 1MHz Mounting: SMD Case: uDFN8 Kind of interface: serial Operating temperature: -40...125°C Access time: 450ns Kind of package: reel; tape Operating voltage: 1.7...5.5V |
Produkt ist nicht verfügbar |
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CAV24C04WE-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: I2C Memory organisation: 512x8bit Clock frequency: 400kHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 900ns Kind of package: reel; tape Operating voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
ISL9V5036S3ST |
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Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 31A
Power dissipation: 250W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 390V; 31A; 250W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 390V
Collector current: 31A
Power dissipation: 250W
Case: D2PAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; logic level
Application: ignition systems
Produkt ist nicht verfügbar
BCP56T3G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 1A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.5W
Case: SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 130MHz
Produkt ist nicht verfügbar
FDB3632 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 310W; D2PAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 310W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDMA1028NZ-F021 |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; Idm: 6A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Drain current: 3.7A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Case: MicroFET
On-state resistance: 90mΩ
Gate-source voltage: ±12V
Pulsed drain current: 6A
Power dissipation: 1.4W
Gate charge: 6nC
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.7A; Idm: 6A; 1.4W
Mounting: SMD
Kind of package: reel; tape
Drain current: 3.7A
Kind of channel: enhanced
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Case: MicroFET
On-state resistance: 90mΩ
Gate-source voltage: ±12V
Pulsed drain current: 6A
Power dissipation: 1.4W
Gate charge: 6nC
Polarisation: unipolar
Produkt ist nicht verfügbar
ESD9L3.3ST5G |
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Hersteller: ONSEMI
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; Ch: 1; 0.5÷0.9pF
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Capacitance: 0.5...0.9pF
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.15W; 4.8V; SOD923; reel,tape; Ch: 1; 0.5÷0.9pF
Type of diode: TVS
Peak pulse power dissipation: 0.15W
Max. off-state voltage: 3.3V
Breakdown voltage: 4.8V
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Capacitance: 0.5...0.9pF
Produkt ist nicht verfügbar
BC846CLT1G |
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Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 0.3W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 4720 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
455+ | 0.16 EUR |
705+ | 0.1 EUR |
1374+ | 0.052 EUR |
2067+ | 0.035 EUR |
2956+ | 0.024 EUR |
3125+ | 0.023 EUR |
FSA2268L10X |
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; OUT: SPDT x2; TTL
Type of integrated circuit: analog switch
Number of channels: 2
Case: MicroPak10
Supply voltage: 1.65...4.3V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: SPDT x2
Technology: TTL
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; MicroPak10; 1.65÷4.3VDC; OUT: SPDT x2; TTL
Type of integrated circuit: analog switch
Number of channels: 2
Case: MicroPak10
Supply voltage: 1.65...4.3V DC
Mounting: SMD
Operating temperature: -40...85°C
Kind of output: SPDT x2
Technology: TTL
Produkt ist nicht verfügbar
FSA2268UMX |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.3VDC; reel,tape; 500nA; TTL
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: analog switch
Number of channels: 2
Quiescent current: 500nA
Kind of output: SPDT x2
Technology: TTL
Case: UMLP10
Supply voltage: 1.65...4.3V DC
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 2; UMLP10; 1.65÷4.3VDC; reel,tape; 500nA; TTL
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Type of integrated circuit: analog switch
Number of channels: 2
Quiescent current: 500nA
Kind of output: SPDT x2
Technology: TTL
Case: UMLP10
Supply voltage: 1.65...4.3V DC
Produkt ist nicht verfügbar
NCP456RFCCT2G |
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Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Case: WLCSP6
Mounting: SMD
On-state resistance: 50mΩ
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 0.75...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2A; Ch: 1; N-Channel; SMD; WLCSP6
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2A
Case: WLCSP6
Mounting: SMD
On-state resistance: 50mΩ
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 0.75...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Kind of output: N-Channel
Produkt ist nicht verfügbar
NTB25P06T4G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27.5A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -27.5A; 120W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -27.5A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
NTD14N03RT4G | ![]() |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 2.5A; Idm: 28A; 20.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 2.5A
Pulsed drain current: 28A
Power dissipation: 20.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 2.5A; Idm: 28A; 20.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 2.5A
Pulsed drain current: 28A
Power dissipation: 20.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.117Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
NTD20N03L27T4G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 16A; 74W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 16A
Power dissipation: 74W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
NTD25P03LT4G |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; 75W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3409 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 1.86 EUR |
57+ | 1.27 EUR |
76+ | 0.94 EUR |
81+ | 0.89 EUR |
NTD4302T4G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 43A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 43A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
NTD4804NT4G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 124A; Idm: 230A; 107W; DPAK
Mounting: SMD
Power dissipation: 107W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 230A
Case: DPAK
Drain-source voltage: 30V
Drain current: 124A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 124A; Idm: 230A; 107W; DPAK
Mounting: SMD
Power dissipation: 107W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 30nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 230A
Case: DPAK
Drain-source voltage: 30V
Drain current: 124A
On-state resistance: 4.7mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
NTD4805NT4G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; Idm: 175A; 79W; DPAK
Mounting: SMD
Power dissipation: 79W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 175A
Case: DPAK
Drain-source voltage: 30V
Drain current: 73A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; Idm: 175A; 79W; DPAK
Mounting: SMD
Power dissipation: 79W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 20.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 175A
Case: DPAK
Drain-source voltage: 30V
Drain current: 73A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
NTD4808N-1G |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 126A; 54.6W; IPAK
Mounting: THT
Power dissipation: 54.6W
Polarisation: unipolar
Kind of package: tube
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 126A
Case: IPAK
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 10.3mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 126A; 54.6W; IPAK
Mounting: THT
Power dissipation: 54.6W
Polarisation: unipolar
Kind of package: tube
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 126A
Case: IPAK
Drain-source voltage: 30V
Drain current: 49A
On-state resistance: 10.3mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
BAT54AWT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 7.6pF
Case: SOT323
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 7.6pF
Case: SOT323
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
auf Bestellung 8150 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
334+ | 0.21 EUR |
451+ | 0.16 EUR |
834+ | 0.086 EUR |
1909+ | 0.037 EUR |
2017+ | 0.035 EUR |
SBAT54ALT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT23; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Case: SOT23
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT23; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Case: SOT23
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
SBAT54ALT3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT23; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Case: SOT23
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT23; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Case: SOT23
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.225W
Produkt ist nicht verfügbar
SBAT54AWT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Case: SOT323
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; SOT323; 5ns; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 10pF
Case: SOT323
Max. forward voltage: 0.8V
Max. load current: 0.3A
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
NSR0130P2T5G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD923
Max. off-state voltage: 30V
Max. forward voltage: 0.525V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.1A; SOD923; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD923
Max. off-state voltage: 30V
Max. forward voltage: 0.525V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward impulse current: 1A
auf Bestellung 6240 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
260+ | 0.28 EUR |
635+ | 0.11 EUR |
715+ | 0.1 EUR |
785+ | 0.092 EUR |
795+ | 0.09 EUR |
830+ | 0.087 EUR |
NSR0240V2T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; reel,tape
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD523
Max. off-state voltage: 40V
Max. forward voltage: 0.7V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; reel,tape
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD523
Max. off-state voltage: 40V
Max. forward voltage: 0.7V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 2A
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
235+ | 0.31 EUR |
240+ | 0.3 EUR |
NSR0340V2T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; reel,tape
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD523
Max. off-state voltage: 40V
Max. forward voltage: 0.7V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOD523; reel,tape
Application: automotive industry
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD523
Max. off-state voltage: 40V
Max. forward voltage: 0.7V
Load current: 0.25A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
NSR05F40NXT5G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; DSN0402-2; reel,tape
Type of diode: Schottky rectifying
Max. forward impulse current: 1A
Semiconductor structure: single diode
Mounting: SMD
Case: DSN0402-2
Max. off-state voltage: 40V
Kind of package: reel; tape
Max. forward voltage: 0.46V
Load current: 0.5A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; DSN0402-2; reel,tape
Type of diode: Schottky rectifying
Max. forward impulse current: 1A
Semiconductor structure: single diode
Mounting: SMD
Case: DSN0402-2
Max. off-state voltage: 40V
Kind of package: reel; tape
Max. forward voltage: 0.46V
Load current: 0.5A
Produkt ist nicht verfügbar
NSR0620P2T5G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD923; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD923
Max. off-state voltage: 20V
Max. forward voltage: 0.52V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.5A; SOD923; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOD923
Max. off-state voltage: 20V
Max. forward voltage: 0.52V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 1A
auf Bestellung 4925 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
330+ | 0.22 EUR |
495+ | 0.15 EUR |
550+ | 0.13 EUR |
695+ | 0.1 EUR |
735+ | 0.098 EUR |
NSR07540SLT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1.5A; SOT23-3; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOT23-3
Max. off-state voltage: 40V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward impulse current: 8A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 1.5A; SOT23-3; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: SOT23-3
Max. off-state voltage: 40V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward impulse current: 8A
Produkt ist nicht verfügbar
NSR20F30NXT5G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; DSN0603-2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Case: DSN0603-2
Kind of package: reel; tape
Max. forward impulse current: 28A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 2A; DSN0603-2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Case: DSN0603-2
Kind of package: reel; tape
Max. forward impulse current: 28A
auf Bestellung 1161 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
157+ | 0.46 EUR |
175+ | 0.41 EUR |
213+ | 0.34 EUR |
226+ | 0.32 EUR |
UMC3NT1G |
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Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT; 50V; 0.1A; 0.15W; SOT353
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT353
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common base-collector
Base resistor: 10/10kΩ
Base-emitter resistor: 10/10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT; 50V; 0.1A; 0.15W; SOT353
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT353
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common base-collector
Base resistor: 10/10kΩ
Base-emitter resistor: 10/10kΩ
Produkt ist nicht verfügbar
ESD9B5.0ST5G |
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Hersteller: ONSEMI
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.3W; 7.8V; 15A; bidirectional; SOD923; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.3W
Max. off-state voltage: 5V
Breakdown voltage: 7.8V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.3W; 7.8V; 15A; bidirectional; SOD923; reel,tape; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.3W
Max. off-state voltage: 5V
Breakdown voltage: 7.8V
Max. forward impulse current: 15A
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Leakage current: 0.1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Number of channels: 1
auf Bestellung 1508 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
264+ | 0.27 EUR |
782+ | 0.092 EUR |
1117+ | 0.064 EUR |
1508+ | 0.047 EUR |
BC857CWT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT23
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 1565 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
903+ | 0.079 EUR |
1565+ | 0.046 EUR |
SBC857CLT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 270...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 270...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
MC74VHC138DR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS; SMD; SOIC16; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS; SMD; SOIC16; VHC
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
MC74VHC138DTR2G |
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Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Decoders, multiplexers, switches
Description: IC: digital; 3 to 8 line,decoder; Ch: 1; IN: 6; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: 3 to 8 line; decoder
Number of channels: 1
Number of inputs: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
FQT13N06LTF |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.24A
Pulsed drain current: 11.2A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.24A
Pulsed drain current: 11.2A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
1SMB5931BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; 20.8mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Zener current: 20.8mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 12Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 18V; 20.8mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 18V
Zener current: 20.8mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 12Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
auf Bestellung 3490 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
125+ | 0.57 EUR |
186+ | 0.38 EUR |
237+ | 0.3 EUR |
407+ | 0.18 EUR |
428+ | 0.17 EUR |
1SMB5932BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; 18.7mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Zener current: 18.7mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 14Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 20V; 18.7mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 20V
Zener current: 18.7mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 14Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
auf Bestellung 4555 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
173+ | 0.41 EUR |
223+ | 0.32 EUR |
281+ | 0.25 EUR |
407+ | 0.18 EUR |
562+ | 0.13 EUR |
596+ | 0.12 EUR |
1SMB5934BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; 15.6mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Zener current: 15.6mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 19Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; 15.6mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Zener current: 15.6mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 19Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
auf Bestellung 3547 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
148+ | 0.49 EUR |
248+ | 0.29 EUR |
421+ | 0.17 EUR |
610+ | 0.12 EUR |
650+ | 0.11 EUR |
1SMB5937BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 33V; 11.4mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 33V
Zener current: 11.4mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 33Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 33V; 11.4mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 33V
Zener current: 11.4mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 33Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
auf Bestellung 2044 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
173+ | 0.41 EUR |
244+ | 0.29 EUR |
481+ | 0.15 EUR |
496+ | 0.14 EUR |
544+ | 0.13 EUR |
1SMB5938BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; 10.4mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Zener current: 10.4mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 38Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 36V; 10.4mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 36V
Zener current: 10.4mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 38Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Produkt ist nicht verfügbar
NCP81274MNTXG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Topology: buck
Frequency: 250...1200kHz
Input voltage: 4.5...20V
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷20V; QFN40; buck
Type of integrated circuit: PMIC
Case: QFN40
Mounting: SMD
Operating temperature: -10...100°C
Topology: buck
Frequency: 250...1200kHz
Input voltage: 4.5...20V
Produkt ist nicht verfügbar
MC14040BDG |
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Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; Ch: 1; IN: 2; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 3...18V DC
Technology: CMOS
Kind of integrated circuit: 12bit; binary counter
Number of inputs: 2
Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; Ch: 1; IN: 2; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Kind of package: tube
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 3...18V DC
Technology: CMOS
Kind of integrated circuit: 12bit; binary counter
Number of inputs: 2
Produkt ist nicht verfügbar
MC14040BDR2G |
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Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; CMOS; SMD; SO16; 3÷18VDC
Type of integrated circuit: digital
Case: SO16
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Technology: CMOS
Kind of integrated circuit: 12bit; binary counter
Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; CMOS; SMD; SO16; 3÷18VDC
Type of integrated circuit: digital
Case: SO16
Mounting: SMD
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Technology: CMOS
Kind of integrated circuit: 12bit; binary counter
Produkt ist nicht verfügbar
MC14040BDTR2G |
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Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; Ch: 1; IN: 2; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Case: TSSOP16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 3...18V DC
Technology: CMOS
Kind of integrated circuit: 12bit; binary counter
Number of inputs: 2
Category: Counters/dividers
Description: IC: digital; 12bit,binary counter; Ch: 1; IN: 2; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Case: TSSOP16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 1
Supply voltage: 3...18V DC
Technology: CMOS
Kind of integrated circuit: 12bit; binary counter
Number of inputs: 2
Produkt ist nicht verfügbar
MC14042BDR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: latch
Number of channels: 4
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Latches
Description: IC: digital; latch; Ch: 4; CMOS; 3÷18VDC; SMD; SOIC16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: latch
Number of channels: 4
Technology: CMOS
Supply voltage: 3...18V DC
Mounting: SMD
Case: SOIC16
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
MC14044BDG |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; tube
Kind of package: tube
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 4
Kind of output: 3-state
Trigger: level-triggered
Kind of integrated circuit: RS latch
Mounting: SMD
Operating temperature: -40...85°C
Case: SO16
Category: Latches
Description: IC: digital; RS latch; Ch: 4; 3÷18VDC; SMD; SO16; -40÷85°C; tube
Kind of package: tube
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Number of channels: 4
Kind of output: 3-state
Trigger: level-triggered
Kind of integrated circuit: RS latch
Mounting: SMD
Operating temperature: -40...85°C
Case: SO16
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 5.11 EUR |
MC14044BDR2G |
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Hersteller: ONSEMI
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 4
Supply voltage: 3...18V DC
Technology: CMOS
Kind of integrated circuit: RS latch
Number of inputs: 2
Category: Latches
Description: IC: digital; RS latch; Ch: 4; IN: 2; CMOS; 3÷18VDC; SMD; SOIC16
Type of integrated circuit: digital
Case: SOIC16
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Number of channels: 4
Supply voltage: 3...18V DC
Technology: CMOS
Kind of integrated circuit: RS latch
Number of inputs: 2
Produkt ist nicht verfügbar
1SMB5941BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 47V; 8mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 47V
Zener current: 8mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 67Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 47V; 8mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 47V
Zener current: 8mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 67Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
auf Bestellung 3040 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
179+ | 0.4 EUR |
221+ | 0.32 EUR |
350+ | 0.2 EUR |
432+ | 0.17 EUR |
455+ | 0.16 EUR |
500+ | 0.15 EUR |
1SMB5943BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; 6.7mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Zener current: 6.7mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 86Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; 6.7mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Zener current: 6.7mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 86Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
auf Bestellung 3040 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
173+ | 0.41 EUR |
233+ | 0.31 EUR |
355+ | 0.2 EUR |
491+ | 0.15 EUR |
516+ | 0.14 EUR |
2500+ | 0.13 EUR |
1SMB5946BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 75V; 5mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 75V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 140Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 75V; 5mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 75V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 140Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
auf Bestellung 1495 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
173+ | 0.41 EUR |
217+ | 0.33 EUR |
341+ | 0.21 EUR |
491+ | 0.15 EUR |
516+ | 0.14 EUR |
1SMB5948BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; 4.1mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Zener current: 4.1mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 200Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 91V; 4.1mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 91V
Zener current: 4.1mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 200Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Produkt ist nicht verfügbar
1SMB5949BT3G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; 3.7mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Zener current: 3.7mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 250Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 100V; 3.7mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 100V
Zener current: 3.7mA
Mounting: SMD
Tolerance: ±5%
Zener resistance: 250Ω
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
auf Bestellung 282 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
152+ | 0.47 EUR |
204+ | 0.35 EUR |
249+ | 0.29 EUR |
282+ | 0.26 EUR |
MJ11033G | ![]() |
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Hersteller: ONSEMI
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3
Mounting: THT
Collector current: 50A
Type of transistor: PNP
Power dissipation: 300W
Polarisation: bipolar
Kind of package: in-tray
Kind of transistor: Darlington
Case: TO3
Collector-emitter voltage: 120V
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 120V; 50A; 300W; TO3
Mounting: THT
Collector current: 50A
Type of transistor: PNP
Power dissipation: 300W
Polarisation: bipolar
Kind of package: in-tray
Kind of transistor: Darlington
Case: TO3
Collector-emitter voltage: 120V
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 19.56 EUR |
5+ | 14.77 EUR |
25+ | 14.2 EUR |
SMS05CT1G |
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Hersteller: ONSEMI
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.2÷7.2V; 24A; 350W; common anode; TSOP6; Ch: 5
Type of diode: TVS array
Breakdown voltage: 6.2...7.2V
Max. forward impulse current: 24A
Peak pulse power dissipation: 350W
Semiconductor structure: common anode
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Number of channels: 5
Kind of package: reel; tape
Category: Transil diodes - arrays
Description: Diode: TVS array; 6.2÷7.2V; 24A; 350W; common anode; TSOP6; Ch: 5
Type of diode: TVS array
Breakdown voltage: 6.2...7.2V
Max. forward impulse current: 24A
Peak pulse power dissipation: 350W
Semiconductor structure: common anode
Mounting: SMD
Case: TSOP6
Max. off-state voltage: 5V
Features of semiconductor devices: ESD protection
Number of channels: 5
Kind of package: reel; tape
auf Bestellung 1279 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
186+ | 0.39 EUR |
265+ | 0.27 EUR |
380+ | 0.19 EUR |
402+ | 0.18 EUR |
NCP803SN308T1G |
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Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open drain; 1.2÷5.5VDC
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 3.08V
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open drain; 1.2÷5.5VDC
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.2...5.5V DC
Case: SOT23-3
Operating temperature: -40...105°C
Mounting: SMD
DC supply current: 2.5µA
Maximum output current: 20mA
Threshold on-voltage: 3.08V
Produkt ist nicht verfügbar
MC74HC4852ADR2G |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 2÷6VDC
Type of integrated circuit: analog switch
Mounting: SMD
Number of channels: 2
Case: SO16
Quiescent current: 40µA
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer; multiplexer
Manufacturer series: HC
Technology: CMOS
Supply voltage: 2...6V DC
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; SO16; 2÷6VDC
Type of integrated circuit: analog switch
Mounting: SMD
Number of channels: 2
Case: SO16
Quiescent current: 40µA
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer; multiplexer
Manufacturer series: HC
Technology: CMOS
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
MC74HC4852ADTR2G |
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Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; TSSOP16; 40uA
Type of integrated circuit: analog switch
Mounting: SMD
Number of channels: 2
Case: TSSOP16
Quiescent current: 40µA
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer; multiplexer
Manufacturer series: HC
Technology: CMOS
Supply voltage: 2...6V DC
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 2; TSSOP16; 40uA
Type of integrated circuit: analog switch
Mounting: SMD
Number of channels: 2
Case: TSSOP16
Quiescent current: 40µA
Operating temperature: -55...125°C
Kind of package: reel; tape
Kind of integrated circuit: demultiplexer; multiplexer
Manufacturer series: HC
Technology: CMOS
Supply voltage: 2...6V DC
Produkt ist nicht verfügbar
NV24C04DTVLT3G |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; TSSOP8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Produkt ist nicht verfügbar
NV24C04MUW3VLTBG |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 1.7÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 1MHz
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 450ns
Kind of package: reel; tape
Operating voltage: 1.7...5.5V
Produkt ist nicht verfügbar
CAV24C04WE-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; I2C; 512x8bit; 2.5÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: I2C
Memory organisation: 512x8bit
Clock frequency: 400kHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 900ns
Kind of package: reel; tape
Operating voltage: 2.5...5.5V
Produkt ist nicht verfügbar