FDME1024NZT onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 20V 3.8A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
auf Bestellung 1411 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 1.43 EUR |
| 16+ | 1.17 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.63 EUR |
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Technische Details FDME1024NZT onsemi
Description: MOSFET 2N-CH 20V 3.8A 6MICROFET, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 600mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.8A, Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V, Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-MicroFET (1.6x1.6).
Weitere Produktangebote FDME1024NZT nach Preis ab 0.57 EUR bis 1.44 EUR
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FDME1024NZT | Hersteller : onsemi / Fairchild |
MOSFET 20V Dual N-Channel PowerTrench |
auf Bestellung 43 Stücke: Lieferzeit 10-14 Tag (e) |
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FDME1024NZT | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 20V 3.8A 6-Pin UDFN EP T/R |
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FDME1024NZT | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET Mounting: SMD Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.2nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Case: MicroFET Drain-source voltage: 20V Drain current: 3.8A On-state resistance: 0.16Ω Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 5000 Stücke |
Produkt ist nicht verfügbar |
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FDME1024NZT | Hersteller : onsemi |
Description: MOSFET 2N-CH 20V 3.8A 6MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (1.6x1.6) |
Produkt ist nicht verfügbar |
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FDME1024NZT | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.8A; 1.4W; MicroFET Mounting: SMD Power dissipation: 1.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.2nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±8V Case: MicroFET Drain-source voltage: 20V Drain current: 3.8A On-state resistance: 0.16Ω Type of transistor: N-MOSFET x2 |
Produkt ist nicht verfügbar |