FDMC86260ET150 onsemi / Fairchild
auf Bestellung 16240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.15 EUR |
| 10+ | 2.68 EUR |
| 100+ | 2.22 EUR |
| 250+ | 2.2 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.67 EUR |
| 3000+ | 1.61 EUR |
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Technische Details FDMC86260ET150 onsemi / Fairchild
Description: MOSFET N-CH 150V 5.4A/25A PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V, Power Dissipation (Max): 2.8W (Ta), 65W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: Power33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V.
Weitere Produktangebote FDMC86260ET150 nach Preis ab 1.72 EUR bis 3.63 EUR
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FDMC86260ET150 | Hersteller : onsemi |
 Description: MOSFET N-CH 150V 5.4A/25A PWR33Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V |
auf Bestellung 2750 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86260ET150 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 5.4A 8-Pin Power QFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMC86260ET150 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Pulsed drain current: 116A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 69mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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FDMC86260ET150 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 5.4A 8-Pin Power QFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC86260ET150 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 5.4A 8-Pin Power QFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC86260ET150 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 5.4A/25A PWR33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V |
Produkt ist nicht verfügbar |
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| FDMC86260ET150 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; Idm: 116A; 65W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Pulsed drain current: 116A Power dissipation: 65W Case: Power33 Gate-source voltage: ±20V On-state resistance: 69mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |