Produkte > DMN
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||
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DMN-8000DO | LSI | BGA | auf Bestellung 3325 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8100 C0 | LSILOGIC | 02+ | auf Bestellung 135 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8100 C0 | LSILOGIC | 02+ | auf Bestellung 135 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8100CO | LSI | BGA | auf Bestellung 3325 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8100CO | LSI | BGA | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8600 | LSI | 04+ QFP | auf Bestellung 250 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8600 | LSILOGIC | N/A | auf Bestellung 37 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8600 BO | LSI | BGA | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8600 BO | LSI | BGA | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8600 D0 | LSI | BGA | auf Bestellung 767 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8600DU | LSI | 03+ | auf Bestellung 22 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8602 | LSILOGIC | BGA 04+ | auf Bestellung 150 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8602 | LSI | 06+ PBGA308; | auf Bestellung 166 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8602 BO | LSI | BGA | auf Bestellung 160 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8602 BO | LSI | 03+ | auf Bestellung 55 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8602 BO | LSILOGIC | BGA | auf Bestellung 325 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8602-BO | auf Bestellung 532 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
DMN-8602B0 | LSILOGIG | 0614+ | auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8602BO | LSI | QFP | auf Bestellung 200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8602BO | LSI | QFP | auf Bestellung 3200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8602BO | LSI | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
DMN-8602BO | LSI | 05+ | auf Bestellung 2800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8603 | auf Bestellung 269 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
DMN-8603B1 | auf Bestellung 271 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
DMN-8623 | auf Bestellung 738 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
DMN-8652 | auf Bestellung 439 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
DMN-8652 BO | LSI | auf Bestellung 120 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
DMN-8652B0 | LSI | 2005 BGA | auf Bestellung 399 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8652BO | LSI | BGA | auf Bestellung 3325 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8652BO | LSI | BGA | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8652BO | LSILOGIC | 06PB | auf Bestellung 120 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN-8802BO | LSI | BGA | auf Bestellung 230 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
DMN100 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
DMN100 | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN100-7 | Diodes Incorporated | Description: MOSFET N-CH 30V 1.1A SC59-3 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN100-7-F | Diodes Inc | Trans MOSFET N-CH 30V 1.1A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN100-7-F | Diodes Zetex | Trans MOSFET N-CH 30V 1.1A 3-Pin SC-59 T/R | auf Bestellung 2600 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN100-7-F | Diodes Incorporated | Description: MOSFET N-CH 30V 1.1A SC59-3 | auf Bestellung 43263 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN100-7-F | Diodes Zetex | Trans MOSFET N-CH 30V 1.1A 3-Pin SC-59 T/R | auf Bestellung 2600 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN100-7-F | Diodes Incorporated | MOSFET N-Channel | auf Bestellung 252 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN100-7-F | Diodes Incorporated | Description: MOSFET N-CH 30V 1.1A SC59-3 | auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1001UCA10-7 | Diodes Incorporated | Description: MOSFET 2N-CH 12V 20A X2-TSN1820 Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 6V Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4V Vgs(th) (Max) @ Id: 1.4V @ 870µA Supplier Device Package: X2-TSN1820-10 | auf Bestellung 111000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1001UCA10-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 1196 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1001UCA10-7 | DIODES INC. | Description: DIODES INC. - DMN1001UCA10-7 - Dual-MOSFET, n-Kanal, 12 V, 12 V, 20 A, 20 A, 0.00319 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 12V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00319ohm Verlustleistung, p-Kanal: 1W Drain-Source-Spannung Vds, n-Kanal: 12V euEccn: NLR Bauform - Transistor: X2-TSN1820 Anzahl der Pins: 10Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.00319ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1001UCA10-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 16A; Idm: 90A; 2.4W Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 29nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 90A Case: X2-TSN1820-10 Drain-source voltage: 12V Drain current: 16A On-state resistance: 6.9mΩ Type of transistor: N-MOSFET x2 Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1001UCA10-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 16A; Idm: 90A; 2.4W Mounting: SMD Power dissipation: 2.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 29nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 90A Case: X2-TSN1820-10 Drain-source voltage: 12V Drain current: 16A On-state resistance: 6.9mΩ Type of transistor: N-MOSFET x2 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1001UCA10-7 | Diodes Incorporated | Description: MOSFET 2N-CH 12V 20A X2-TSN1820 Packaging: Cut Tape (CT) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2865pF @ 6V Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4V Vgs(th) (Max) @ Id: 1.4V @ 870µA Supplier Device Package: X2-TSN1820-10 | auf Bestellung 113989 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1001UCA10-7 | Diodes Inc | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1001UCA10-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1001UCA10-7 | DIODES INC. | Description: DIODES INC. - DMN1001UCA10-7 - Dual-MOSFET, n-Kanal, 12 V, 12 V, 20 A, 20 A, 0.00319 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 12V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00319ohm Verlustleistung, p-Kanal: 1W Drain-Source-Spannung Vds, n-Kanal: 12V euEccn: NLR Bauform - Transistor: X2-TSN1820 Anzahl der Pins: 10Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.00319ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2950 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1002UCA6-7 | Diodes Zetex | Trans MOSFET N-CH 12V 24.4A 6-Pin X4-DSN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1002UCA6-7 | Diodes Incorporated | Description: MOSFET 2N-CH X4-DSN3118-6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 4V Supplier Device Package: X4-DSN3118-6 | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1002UCA6-7 | Diodes Zetex | Trans MOSFET N-CH 12V 24.4A 6-Pin X4-DSN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1002UCA6-7 | Diodes Incorporated | Description: MOSFET 2N-CH X4-DSN3118-6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Gate Charge (Qg) (Max) @ Vgs: 68.6nC @ 4V Supplier Device Package: X4-DSN3118-6 | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN1002UCA6-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1003UCA6-7 | Diodes Incorporated | Description: MOSFET 2N-CH X3-DSN3518-6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.67W Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X3-DSN3518-6 | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN1003UCA6-7 | Diodes Inc | Trans MOSFET N-CH 12V 23.6A 6-Pin X3-DSN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1003UCA6-7 | Diodes Incorporated | Description: MOSFET 2N-CH X3-DSN3518-6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.67W Input Capacitance (Ciss) (Max) @ Vds: 3315pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 56.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X3-DSN3518-6 | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1003UCA6-7 | Diodes Incorporated | MOSFETs MOSFETBVDSS: 8V-24V | auf Bestellung 2409 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1003UCA6-7 | Diodes Zetex | Trans MOSFET N-CH 12V 23.6A 6-Pin X3-DSN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1003UFDE-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1003UFDE-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V U-DFN2020-6 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 3mOhm @ 15A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2551 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1003UFDE-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | auf Bestellung 1220 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1004UFDF-13 | Diodes Zetex | Trans MOSFET N-CH 12V 15A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1004UFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 12V 15A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 15A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1004UFDF-13 | Diodes Incorporated | MOSFET MOSFETBVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1004UFDF-13 | Diodes Zetex | Trans MOSFET N-CH 12V 15A 6-Pin UDFN EP T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1004UFDF-13 | Diodes Zetex | Trans MOSFET N-CH 12V 15A 6-Pin UDFN EP T/R | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1004UFDF-7 | DIODES INC. | Description: DIODES INC. - DMN1004UFDF-7 - Leistungs-MOSFET, n-Kanal, 12 V, 15 A, 0.0041 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 2.1W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0041ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2090 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1004UFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 12A; Idm: 70A; 2.1W Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 12A On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 70A Case: U-DFN2020-6 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1004UFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 12A; Idm: 70A; 2.1W Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 12A On-state resistance: 7mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 70A Case: U-DFN2020-6 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1004UFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 15A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 15A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V | auf Bestellung 11990 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1004UFDF-7 | Diodes Zetex | Trans MOSFET N-CH 12V 15A 6-Pin UDFN EP T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1004UFDF-7 | DIODES INC. | Description: DIODES INC. - DMN1004UFDF-7 - Leistungs-MOSFET, n-Kanal, 12 V, 15 A, 0.0041 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 15A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 2.1W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0041ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2090 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1004UFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 15A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 15A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1004UFDF-7 | Diodes Incorporated | MOSFETs MOSFETBVDSS: 8V-24V | auf Bestellung 11235 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1004UFDF-7 | Diodes Zetex | Trans MOSFET N-CH 12V 15A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1004UFDF-7 | Diodes Inc | Trans MOSFET N-CH 12V 15A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1004UFV-13 | Diodes Incorporated | Description: MOSFET N-CH 12V 70A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1004UFV-13 | Diodes Zetex | Trans MOSFET N-CH 12V 70A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1004UFV-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1004UFV-13 | Diodes Inc | Trans MOSFET N-CH 12V 70A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1004UFV-13 | Diodes Incorporated | Description: MOSFET N-CH 12V 70A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V | auf Bestellung 2316 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1004UFV-13 | Diodes Zetex | Trans MOSFET N-CH 12V 70A 8-Pin PowerDI EP T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1004UFV-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 50A; Idm: 80A; 1.9W Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 50A On-state resistance: 5.1mΩ Type of transistor: N-MOSFET Power dissipation: 1.9W Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 80A Case: PowerDI3333-8 Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1004UFV-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 50A; Idm: 80A; 1.9W Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 50A On-state resistance: 5.1mΩ Type of transistor: N-MOSFET Power dissipation: 1.9W Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 80A Case: PowerDI3333-8 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1004UFV-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 17238 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1004UFV-7 | Diodes Inc | Trans MOSFET N-CH 12V 70A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1004UFV-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 70A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V | auf Bestellung 146000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1004UFV-7 | DIODES INC. | Description: DIODES INC. - DMN1004UFV-7 - Leistungs-MOSFET, n-Kanal, 12 V, 70 A, 0.0028 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 900mW Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 900mW Bauform - Transistor: PowerDI 3333 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0028ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0028ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2658 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1004UFV-7 | Diodes Zetex | Trans MOSFET N-CH 12V 70A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1004UFV-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8 Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 55A On-state resistance: 5.1mΩ Type of transistor: N-MOSFET Power dissipation: 0.9W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Case: PowerDI®3333-8 Anzahl je Verpackung: 1 Stücke | auf Bestellung 1104 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN1004UFV-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 55A; 0.9W; PowerDI®3333-8 Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 55A On-state resistance: 5.1mΩ Type of transistor: N-MOSFET Power dissipation: 0.9W Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Case: PowerDI®3333-8 | auf Bestellung 1104 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1004UFV-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 70A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2385 pF @ 6 V | auf Bestellung 154372 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1004UFV-7 | DIODES INC. | Description: DIODES INC. - DMN1004UFV-7 - Leistungs-MOSFET, n-Kanal, 12 V, 70 A, 0.0028 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 900mW Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 900mW Bauform - Transistor: PowerDI 3333 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0028ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0028ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2658 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1004UFV-7 | Diodes Zetex | Trans MOSFET N-CH 12V 70A 8-Pin PowerDI EP T/R | auf Bestellung 102000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1006UCA6-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 13.2A; Idm: 80A; 2.4W Kind of package: reel; tape Drain-source voltage: 12V Drain current: 13.2A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 35.2nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 80A Mounting: SMD Case: X3-DSN2718-6 Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1006UCA6-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 13.2A; Idm: 80A; 2.4W Kind of package: reel; tape Drain-source voltage: 12V Drain current: 13.2A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 2.4W Polarisation: unipolar Gate charge: 35.2nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 80A Mounting: SMD Case: X3-DSN2718-6 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1006UCA6-7 | Diodes Incorporated | Description: MOSFET 2N-CH X3-DSN2718-6 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X3-DSN2718-6 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1006UCA6-7 | Diodes Zetex | Trans MOSFET N-CH 12V 16.6A 6-Pin X3-DSN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1006UCA6-7 | Diodes Incorporated | MOSFET MOSFETBVDSS: 8V-24V | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1006UCA6-7 | Diodes Inc | Trans MOSFET N-CH 12V 16.6A 6-Pin X3-DSN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1006UCA6-7 | Diodes Incorporated | Description: MOSFET 2N-CH X3-DSN2718-6 Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X3-DSN2718-6 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1006UCA6-7-01 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1008UFDF-13 | Diodes Zetex | Trans MOSFET N-CH 12V 12.2A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1008UFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 12V 12.2A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 559615 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN1008UFDF-13 | Diodes Inc | Trans MOSFET N-CH 12V 12.2A 6-Pin UDFN EP T/R | auf Bestellung 1250000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1008UFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 12V 12.2A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 550000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN1008UFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 9.8A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 1W Kind of package: reel; tape Gate charge: 23.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Case: U-DFN2020-6 Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1008UFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 9.8A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 1W Kind of package: reel; tape Gate charge: 23.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Case: U-DFN2020-6 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1008UFDF-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1008UFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 9.8A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 1W Kind of package: reel; tape Gate charge: 23.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Case: U-DFN2020-6 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1008UFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 9.8A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Power dissipation: 1W Kind of package: reel; tape Gate charge: 23.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Case: U-DFN2020-6 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1008UFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 12.2A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 65425 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN1008UFDF-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 91286 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1008UFDF-7 | Diodes Zetex | Trans MOSFET N-CH 12V 12.2A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1008UFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 12.2A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 63000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN1008UFDF-7 | Diodes Inc | Trans MOSFET N-CH 12V 12.2A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1008UFDFQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1008UFDFQ-13 | Diodes Zetex | DMN1008UFDFQ-13 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1008UFDFQ-13 | Diodes Inc | MOSFET BVDSS: 8V24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1008UFDFQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 9.8A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1W Kind of package: reel; tape Gate charge: 23.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Case: U-DFN2020-6 Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1008UFDFQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 9.8A; Idm: 60A; 1W; U-DFN2020-6 Polarisation: unipolar Mounting: SMD Drain-source voltage: 12V Drain current: 9.8A On-state resistance: 12.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 1W Kind of package: reel; tape Gate charge: 23.4nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Case: U-DFN2020-6 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1008UFDFQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V U-DFN2020-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V Power Dissipation (Max): 700mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1008UFDFQ-7 | Diodes Inc | MOSFET BVDSS: 8V24V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1008UFDFQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V U-DFN2020-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V Power Dissipation (Max): 700mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V | auf Bestellung 237000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1008UFDFQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1014UFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 12V 8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 2A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 6 V | auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1014UFDF-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1014UFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 2A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 515 pF @ 6 V | auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1014UFDF-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 2960 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1016UCB6-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 5.5A U-WLB1510-6 Packaging: Tape & Reel (TR) Package / Case: 6-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V Power Dissipation (Max): 920mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-WLB1510-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1016UCB6-7 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 12Vdss 8Vgss 30A | auf Bestellung 849 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1016UCB6-7 | Diodes Inc | N-Channel Enhancement Mode Mosfet | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1016UCB6-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 5.5A U-WLB1510-6 Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 1.5A, 4.5V Power Dissipation (Max): 920mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-WLB1510-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 6 V | auf Bestellung 3493 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1017UCP3-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 7.5A X3-DSN1010 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1017UCP3-7 | Diodes Incorporated | MOSFET MOSFETBVDSS: 8V-24V | auf Bestellung 760 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019UFDE-7 | DIODES INC. | Description: DIODES INC. - DMN1019UFDE-7 - Leistungs-MOSFET, n-Kanal, 12 V, 11 A, 0.007 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 800mV euEccn: NLR Verlustleistung: 2.17W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.007ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4165 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1019UFDE-7 | Diodes Incorporated | Description: MOSFET N CH 12V 11A U-DFN2020-6E Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Power Dissipation (Max): 690mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 10 V | auf Bestellung 1206000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019UFDE-7 | Diodes Zetex | Trans MOSFET N-CH 12V 11A 6-Pin DFN EP T/R | auf Bestellung 296 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1019UFDE-7 | Diodes Inc | Trans MOSFET N-CH 12V 11A 6-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019UFDE-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 5A Power dissipation: 0.69W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019UFDE-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 5A; 0.69W; U-DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 5A Power dissipation: 0.69W Case: U-DFN2020-6 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019UFDE-7 | DIODES INC. | Description: DIODES INC. - DMN1019UFDE-7 - Leistungs-MOSFET, n-Kanal, 12 V, 11 A, 0.007 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 800mV euEccn: NLR Verlustleistung: 2.17W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.007ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4165 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1019UFDE-7 | Diodes Zetex | Trans MOSFET N-CH 12V 11A 6-Pin DFN EP T/R | auf Bestellung 296 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1019UFDE-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | auf Bestellung 6306 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019UFDE-7 | Diodes Incorporated | Description: MOSFET N CH 12V 11A U-DFN2020-6E Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Power Dissipation (Max): 690mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 10 V | auf Bestellung 1206644 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019UFDE-7 | Diodes Zetex | Trans MOSFET N-CH 12V 11A 6-Pin DFN EP T/R | auf Bestellung 1167000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1019UFDE-7 | Diodes Zetex | Trans MOSFET N-CH 12V 11A 6-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019USN | Diodes Incorporated | Diodes Inc. MOSFET BVDSS: 8V 24V SC59 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019USN-13 | Diodes Zetex | Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R | auf Bestellung 8375 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1019USN-13 | DIODES INC. | Description: DIODES INC. - DMN1019USN-13 - Leistungs-MOSFET, n-Kanal, 12 V, 9.3 A, 0.007 ohm, SC-59, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 9.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 680mW Gate-Source-Schwellenspannung, max.: 530mV euEccn: NLR Verlustleistung: 680mW Bauform - Transistor: SC-59 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.007ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.007ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 42698 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1019USN-13 | Diodes Incorporated | Description: MOSFET N-CH 12V 9.3A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Power Dissipation (Max): 680mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2426 pF @ 10 V | auf Bestellung 50000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019USN-13 | Diodes Zetex | Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019USN-13 Produktcode: 121899 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||
DMN1019USN-13 | Diodes Zetex | Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1019USN-13 | DIODES INC. | Description: DIODES INC. - DMN1019USN-13 - Leistungs-MOSFET, n-Kanal, 12 V, 9.3 A, 0.007 ohm, SC-59, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 9.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 530mV euEccn: NLR Verlustleistung: 680mW Bauform - Transistor: SC-59 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.007ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 42698 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1019USN-13 | Diodes Incorporated | MOSFETs 12V N-Ch Enh Mode FET 8Vgss 0.68W | auf Bestellung 69119 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019USN-13 | Diodes Incorporated | Description: MOSFET N-CH 12V 9.3A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Power Dissipation (Max): 680mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2426 pF @ 10 V | auf Bestellung 59248 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019USN-13 | Diodes Zetex | Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R | auf Bestellung 8375 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1019USN-13 | Diodes Inc | Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019USN-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 8.8A Pulsed drain current: 70A Power dissipation: 0.83W Case: SC59 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50.6nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019USN-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 8.8A; Idm: 70A; 830mW; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 8.8A Pulsed drain current: 70A Power dissipation: 0.83W Case: SC59 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50.6nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019USN-7 | DIODES INC. | Description: DIODES INC. - DMN1019USN-7 - Leistungs-MOSFET, n-Kanal, 12 V, 9.3 A, 0.007 ohm, SC-59, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 9.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 680mW Gate-Source-Schwellenspannung, max.: 800mV euEccn: NLR Verlustleistung: 680mW Bauform - Transistor: SC-59 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.007ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.007ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 6838 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1019USN-7 | Diodes Zetex | Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R | auf Bestellung 597000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1019USN-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 9.3A SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Power Dissipation (Max): 680mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2426 pF @ 10 V | auf Bestellung 604326 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019USN-7 | Diodes Zetex | Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019USN-7 | Diodes Incorporated | MOSFETs 12V N-Ch Enh FET 2426pF 27.3nC | auf Bestellung 95535 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019USN-7 | DIODES INC. | Description: DIODES INC. - DMN1019USN-7 - Leistungs-MOSFET, n-Kanal, 12 V, 9.3 A, 0.007 ohm, SC-59, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 9.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 800mV euEccn: NLR Verlustleistung: 680mW Bauform - Transistor: SC-59 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.007ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1019USN-7 | Diodes Zetex | Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1019USN-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 9.3A SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Power Dissipation (Max): 680mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2426 pF @ 10 V | auf Bestellung 600000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019USN-7 | Diodes Inc | Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1019USN-7 | Diodes Zetex | Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1019USN-7 | Diodes Zetex | Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1019USN-7 | DIODES INC. | Description: DIODES INC. - DMN1019USN-7 - Leistungs-MOSFET, n-Kanal, 12 V, 9.3 A, 0.007 ohm, SC-59, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 9.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 800mV euEccn: NLR Verlustleistung: 680mW Bauform - Transistor: SC-59 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.007ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 6838 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1019USN-7 | Diodes Zetex | Trans MOSFET N-CH 12V 9.3A 3-Pin SC-59 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1019USNQ-13 | Diodes Zetex | 12V N-Channel Enhancement Mode MOSFET | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1019USNQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SC59 T&R 10 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Power Dissipation (Max): 680mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SC-59-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2426 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019USNQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V SC59 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019USNQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SC59 T&R 3K Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Power Dissipation (Max): 680mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SC-59-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 50.6 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2426 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019USNQ-7 | Diodes Zetex | 12V N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019USNQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V SC59 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019USNQ-7 | Diodes Zetex | 12V N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1019UVT-13 | Diodes Zetex | Trans MOSFET N-CH 12V 10.7A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019UVT-13 | Diodes Inc | Trans MOSFET N-CH 12V 10.7A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019UVT-13 | Diodes Incorporated | MOSFET 12V Enh Mode FET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019UVT-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 10.1A Pulsed drain current: 70A Power dissipation: 1.11W Case: TSOT26 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019UVT-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 10.1A Pulsed drain current: 70A Power dissipation: 1.11W Case: TSOT26 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50.4nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019UVT-13 | Diodes Incorporated | Description: MOSFET N-CH 12V 10.7A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Power Dissipation (Max): 1.73W (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019UVT-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 10.7A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Power Dissipation (Max): 1.73W (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V | auf Bestellung 50054 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019UVT-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 10.1A Pulsed drain current: 70A Power dissipation: 1.11W Case: TSOT26 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50.4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019UVT-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 12V Drain current: 10.1A Pulsed drain current: 70A Power dissipation: 1.11W Case: TSOT26 Gate-source voltage: ±8V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50.4nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019UVT-7 | Diodes Zetex | Trans MOSFET N-CH 12V 10.7A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019UVT-7 | Diodes Zetex | Trans MOSFET N-CH 12V 10.7A 6-Pin TSOT-26 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1019UVT-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 10.7A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Power Dissipation (Max): 1.73W (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V | auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019UVT-7 | Diodes Zetex | Trans MOSFET N-CH 12V 10.7A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019UVT-7 | Diodes Zetex | Trans MOSFET N-CH 12V 10.7A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019UVT-7 | Diodes Inc | Trans MOSFET N-CH 12V 10.7A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1019UVT-7 | Diodes Incorporated | MOSFET 12V Enh Mode FET | auf Bestellung 13152 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019UVT-7 | Diodes Zetex | Trans MOSFET N-CH 12V 10.7A 6-Pin TSOT-26 T/R | auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1019UVT-7 | Diodes Zetex | Trans MOSFET N-CH 12V 10.7A 6-Pin TSOT-26 T/R | auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1023UCB4-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1023UCB4-7 | Diodes Incorporated | Description: MOSFET N CH 5.1A U-WLB1010-4 Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 1A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: U-WLB1010-4 (Type C) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 288 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1025UFDB-7 | Diodes Inc | Dual N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1025UFDB-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Drain current: 5.5A Pulsed drain current: 35A Power dissipation: 1.7W Case: U-DFN2020-6 Gate-source voltage: ±10V On-state resistance: 38mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 2560 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN1025UFDB-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 5.5A; Idm: 35A; 1.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Drain current: 5.5A Pulsed drain current: 35A Power dissipation: 1.7W Case: U-DFN2020-6 Gate-source voltage: ±10V On-state resistance: 38mΩ Mounting: SMD Gate charge: 23.1nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 2560 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1025UFDB-7 | Diodes Incorporated | MOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W | auf Bestellung 2083 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1029UFDB-13 | Diodes Incorporated | Description: MOSFET 2N-CH 12V 5.6A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1029UFDB-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 5.8A; Idm: 20A; 2.2W Case: U-DFN2020-6 Polarisation: unipolar Drain-source voltage: 12V Drain current: 5.8A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Kind of package: reel; tape Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 20A Mounting: SMD Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1029UFDB-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 5.8A; Idm: 20A; 2.2W Case: U-DFN2020-6 Polarisation: unipolar Drain-source voltage: 12V Drain current: 5.8A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 2.2W Kind of package: reel; tape Gate charge: 19.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 20A Mounting: SMD | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1029UFDB-13 | Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 8Vgs 914pF 10.5nC | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1029UFDB-13 | Diodes Inc | Trans MOSFET N-CH 12V 5.6A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1029UFDB-7 | Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 8Vgs 914pF 10.5nC | auf Bestellung 16200 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1029UFDB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 12V 5.6A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | auf Bestellung 314398 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1029UFDB-7 | Diodes Inc | Trans MOSFET N-CH 12V 5.6A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1029UFDB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 12V 5.6A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 5.6A Input Capacitance (Ciss) (Max) @ Vds: 914pF @ 6V Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19.6nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | auf Bestellung 309000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1029UFDB-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6 Mounting: SMD Drain current: 3.7A Kind of channel: enhanced Drain-source voltage: 12V Type of transistor: N-MOSFET x2 Gate-source voltage: ±8V Kind of package: reel; tape Case: U-DFN2020-6 On-state resistance: 65mΩ Power dissipation: 1.4W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1029UFDB-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 3.7A; 1.4W; U-DFN2020-6 Mounting: SMD Drain current: 3.7A Kind of channel: enhanced Drain-source voltage: 12V Type of transistor: N-MOSFET x2 Gate-source voltage: ±8V Kind of package: reel; tape Case: U-DFN2020-6 On-state resistance: 65mΩ Power dissipation: 1.4W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1032UCB4-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 4.8A U-WLB1010-4 Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 1A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: U-WLB1010-4 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1032UCB4-7 | Diodes Inc | Trans MOSFET N-CH 12V 4.8A 4-Pin U-WLB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1032UCB4-7 | Diodes Zetex | Trans MOSFET N-CH 12V 4.8A 4-Pin U-WLB T/R | auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN1032UCB4-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 4.8A U-WLB1010-4 Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 26mOhm @ 1A, 4.5V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: U-WLB1010-4 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1032UCB4-7 | Diodes Incorporated | MOSFET 20V N-Ch Enh Mode FET 12V 8Vgss 0.9W | auf Bestellung 16939 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN1032UCB4-7 | Diodes Zetex | Trans MOSFET N-CH 12V 4.8A 4-Pin U-WLB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1032UCP4-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X1-DSN1010- Packaging: Bulk Package / Case: 4-XFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 28mOhm @ 1A, 10V Power Dissipation (Max): 790mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: X1-DSN1010-4 (Type B) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1033UCB4-7 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 12V 26mOhm4.5V 5.5A | auf Bestellung 1330 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN1033UCB4-7 | Diodes Zetex | Trans MOSFET N-CH 12V 5.5A 4-Pin UWLP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1033UCB4-7 | Diodes Incorporated | Description: MOSFET 2N-CH 12V U-WLB1818-4 | auf Bestellung 5174 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1033UCB4-7 | Diodes Incorporated | Description: MOSFET 2N-CH 12V U-WLB1818-4 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1045UFR4-7 | DIODES INC. | Description: DIODES INC. - DMN1045UFR4-7 - Leistungs-MOSFET, n-Kanal, 12 V, 3.2 A, 0.025 ohm, X2-DFN1010, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 3.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: X2-DFN1010 Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1045UFR4-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±8V Case: X2-DFN1010-3 Drain-source voltage: 12V Drain current: 3.2A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 1.26W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1045UFR4-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 3.2A; 1.26W; X2-DFN1010-3 Mounting: SMD Kind of channel: enhanced Gate-source voltage: ±8V Case: X2-DFN1010-3 Drain-source voltage: 12V Drain current: 3.2A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 1.26W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1045UFR4-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 3.2A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1010-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V | auf Bestellung 138721 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1045UFR4-7 | DIODES INC. | Description: DIODES INC. - DMN1045UFR4-7 - Leistungs-MOSFET, n-Kanal, 12 V, 3.2 A, 0.025 ohm, X2-DFN1010, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 3.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: X2-DFN1010 Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1045UFR4-7 | Diodes Inc | Trans MOSFET N-CH 12V 3.2A 3-Pin X2-DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1045UFR4-7 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 12V 3.2A 8Vgss | auf Bestellung 11952 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1045UFR4-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 3.2A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.2A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1010-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 10 V | auf Bestellung 135000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1053UCP4-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 2.7A X3DSN0808-4 Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V Power Dissipation (Max): 1.34W Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: X3-DSN0808-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V | auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1053UCP4-7 | Diodes Incorporated | MOSFET MOSFETBVDSS: 8V-24V | auf Bestellung 35980 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1053UCP4-7 | Diodes Incorporated | Description: MOSFET N-CH 12V 2.7A X3DSN0808-4 Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V Power Dissipation (Max): 1.34W Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: X3-DSN0808-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V | auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1054UCB4-7 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 8Vdss 5Vgss 15A | auf Bestellung 5976 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN1054UCB4-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W Mounting: SMD Case: X1-WLB0808-4 Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 8A Drain-source voltage: 8V Drain current: 3.2A On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 1.34W Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1054UCB4-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 8V; 3.2A; Idm: 8A; 1.34W Mounting: SMD Case: X1-WLB0808-4 Kind of package: reel; tape Gate charge: 15nC Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 8A Drain-source voltage: 8V Drain current: 3.2A On-state resistance: 0.11Ω Type of transistor: N-MOSFET Power dissipation: 1.34W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1054UCB4-7 | Diodes Inc | N-Channel Enhancement Mode Mosfet | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1054UCB4-7 | Diodes Incorporated | Description: MOSFET N-CH 8V 2.7A X1-WLB0808-4 Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: X1-WLB0808-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V | auf Bestellung 348000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1054UCB4-7 | Diodes Incorporated | Description: MOSFET N-CH 8V 2.7A X1-WLB0808-4 Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: X1-WLB0808-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V | auf Bestellung 351612 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H099SFG-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 4.2A PWRDI3333 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN10H099SFG-13 | Diodes Incorporated | MOSFETs 100V N-Ch Enh Mode 1127pF 25.2nC | auf Bestellung 8040 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H099SFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W Mounting: SMD Drain-source voltage: 100V Drain current: 4.5A On-state resistance: 99mΩ Type of transistor: N-MOSFET Case: PowerDI3333-8 Power dissipation: 1.18W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H099SFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W Mounting: SMD Drain-source voltage: 100V Drain current: 4.5A On-state resistance: 99mΩ Type of transistor: N-MOSFET Case: PowerDI3333-8 Power dissipation: 1.18W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H099SFG-13 | Diodes Inc | Trans MOSFET N-CH 100V 4.2A 8-Pin PowerDI EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H099SFG-13 | Diodes Zetex | Trans MOSFET N-CH 100V 4.2A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H099SFG-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 4.2A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V Power Dissipation (Max): 980mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H099SFG-7 | Diodes Incorporated | MOSFETs 100V N-Ch Enh Mode 1127pF 25.2nC | auf Bestellung 1621 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H099SFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W Mounting: SMD Drain-source voltage: 100V Drain current: 4.5A On-state resistance: 99mΩ Type of transistor: N-MOSFET Case: PowerDI3333-8 Power dissipation: 1.18W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H099SFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.5A; Idm: 20A; 1.18W Mounting: SMD Drain-source voltage: 100V Drain current: 4.5A On-state resistance: 99mΩ Type of transistor: N-MOSFET Case: PowerDI3333-8 Power dissipation: 1.18W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H099SFG-7 | Diodes Inc | Trans MOSFET N-CH 100V 4.2A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H099SFG-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 4.2A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V Power Dissipation (Max): 980mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V | auf Bestellung 11990 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H099SK3-13 | Diodes Inc | Trans MOSFET N-CH 100V 17A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H099SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 17A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H099SK3-13 | Diodes Incorporated | MOSFETs 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC | auf Bestellung 2551 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H099SK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252 Mounting: SMD Drain-source voltage: 100V Drain current: 13A On-state resistance: 99mΩ Type of transistor: N-MOSFET Case: TO252 Power dissipation: 22W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H099SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 17A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V | auf Bestellung 12536 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H099SK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 20A; 22W; TO252 Mounting: SMD Drain-source voltage: 100V Drain current: 13A On-state resistance: 99mΩ Type of transistor: N-MOSFET Case: TO252 Power dissipation: 22W Polarisation: unipolar Kind of package: reel; tape Gate charge: 25.2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H100SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 18A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V | auf Bestellung 32710 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H100SK3-13 | Diodes Incorporated | MOSFETs 100V N-Ch Enh FET 100mOhm 3V | auf Bestellung 2658 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H100SK3-13 | DIODES INCORPORATED | DMN10H100SK3-13 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H100SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 18A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.3A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 50 V | auf Bestellung 32500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H100SK3-13 | Diodes Inc | Trans MOSFET N-CH 100V 18A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H120SE-13 | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 549pF 10nC | auf Bestellung 3099 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H120SE-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223 Mounting: SMD Case: SOT223 Kind of package: reel; tape Power dissipation: 1.3W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 3.4A On-state resistance: 0.122Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H120SE-13 | Diodes Inc | Trans MOSFET N-CH 100V 3.6A 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H120SE-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 3.6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V | auf Bestellung 905640 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H120SE-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.4A; 1.3W; SOT223 Mounting: SMD Case: SOT223 Kind of package: reel; tape Power dissipation: 1.3W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 3.4A On-state resistance: 0.122Ω Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H120SE-13 | Diodes Zetex | Trans MOSFET N-CH 100V 3.6A 4-Pin(3+Tab) SOT-223 T/R | auf Bestellung 975000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H120SE-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 3.6A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V | auf Bestellung 905000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H120SFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Power dissipation: 1.5W Polarisation: unipolar Gate charge: 10.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Drain-source voltage: 100V Drain current: 4.2A On-state resistance: 0.122Ω Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H120SFG-13 | Diodes Zetex | Trans MOSFET N-CH 100V 3.8A 8-Pin PowerDI EP T/R | auf Bestellung 1017000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H120SFG-13 | DIODES INC. | Description: DIODES INC. - DMN10H120SFG-13 - Leistungs-MOSFET, n-Kanal, 100 V, 3.8 A, 0.068 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 3.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.068ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H120SFG-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 3.8A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V | auf Bestellung 2987838 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H120SFG-13 | Diodes Incorporated | MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF | auf Bestellung 5816 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H120SFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Power dissipation: 1.5W Polarisation: unipolar Gate charge: 10.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Drain-source voltage: 100V Drain current: 4.2A On-state resistance: 0.122Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H120SFG-13 | Diodes Inc | Trans MOSFET N-CH 100V 3.8A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H120SFG-13 | DIODES INC. | Description: DIODES INC. - DMN10H120SFG-13 - Leistungs-MOSFET, n-Kanal, 100 V, 3.8 A, 0.068 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 3.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.068ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H120SFG-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 3.8A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V | auf Bestellung 2985000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H120SFG-7 | DIODES INC. | Description: DIODES INC. - DMN10H120SFG-7 - Leistungs-MOSFET, n-Kanal, 100 V, 3.8 A, 0.068 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 3.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.068ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1982 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H120SFG-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 3.8A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V | auf Bestellung 719889 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H120SFG-7 | Diodes Incorporated | MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF | auf Bestellung 5754 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H120SFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Power dissipation: 1.5W Polarisation: unipolar Gate charge: 10.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Drain-source voltage: 100V Drain current: 4.2A On-state resistance: 0.122Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H120SFG-7 | Diodes Inc | Trans MOSFET N-CH 100V 3.8A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H120SFG-7 | DIODES INC. | Description: DIODES INC. - DMN10H120SFG-7 - Leistungs-MOSFET, n-Kanal, 100 V, 3.8 A, 0.068 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 3.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.068ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1982 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H120SFG-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 3.8A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3.3A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 549 pF @ 50 V | auf Bestellung 714000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H120SFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; Idm: 20A; 1.5W Mounting: SMD Case: PowerDI3333-8 Kind of package: reel; tape Power dissipation: 1.5W Polarisation: unipolar Gate charge: 10.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A Drain-source voltage: 100V Drain current: 4.2A On-state resistance: 0.122Ω Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H120SFG-7 | Diodes Zetex | Trans MOSFET N-CH 100V 3.8A 8-Pin PowerDI EP T/R | auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H170SFDE-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 2.9A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SFDE-13 | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 2.9A 0.66W | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SFDE-7 | Diodes Inc | Trans MOSFET N-CH 100V 2.9A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SFDE-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 2.9A 6UDFN | auf Bestellung 288015000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN10H170SFDE-7 | DIODES INC. | Description: DIODES INC. - DMN10H170SFDE-7 - Leistungs-MOSFET, n-Kanal, 100 V, 2.9 A, 0.116 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 2.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 2.03W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.116ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2955 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H170SFDE-7 | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 2.9A 0.66W | auf Bestellung 2847 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SFDE-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 2.9A 6UDFN | auf Bestellung 288015000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN10H170SFDE-7 | DIODES INC. | Description: DIODES INC. - DMN10H170SFDE-7 - Leistungs-MOSFET, n-Kanal, 100 V, 2.9 A, 0.116 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 2.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 2.03W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.116ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2955 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H170SFDE-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 2.9A 6UDFN | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN10H170SFDE-7 | DIODES INCORPORATED | DMN10H170SFDE-7 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SFG-13 | Diodes Incorporated | MOSFETs N-Ch Enh Mode FET 100Vdss 20Vgss | auf Bestellung 10200 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SFG-13 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc) Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SFG-13 | DIODES INCORPORATED | DMN10H170SFG-13 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SFG-13 | Diodes Inc | Trans MOSFET N-CH 100V 2.9A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SFG-13 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc) Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SFG-7 | DIODES INCORPORATED | DMN10H170SFG-7 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SFG-7 | Diodes Inc | Trans MOSFET N-CH 100V 2.9A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SFG-7 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc) Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SFG-7 | Diodes Incorporated | MOSFETs N-Ch Enh Mode FET 100Vdss 20Vgss | auf Bestellung 1486 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SFG-7 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 8.5A (Tc) Rds On (Max) @ Id, Vgs: 122mOhm @ 3.3A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870.7 pF @ 25 V | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SFGQ-13 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI3333 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SFGQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V~100V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SFGQ-7 | Diodes Incorporated | Description: MOSFET N-CH 100V PWRDI3333 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN10H170SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 12A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V | auf Bestellung 357574 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SK3-13 | DIODES INCORPORATED | DMN10H170SK3-13 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 12A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V | auf Bestellung 357500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SK3-13 | Diodes Inc | Trans MOSFET N-CH 100V 12A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SK3-13 | Diodes Incorporated | MOSFETs 100V N-CH MOSFET 100V 12A | auf Bestellung 24717 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SK3Q-13 | DIODES INCORPORATED | DMN10H170SK3Q-13 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SK3Q-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 12A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 727500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SK3Q-13 | Diodes Inc | 100V N-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SK3Q-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V 100V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SK3Q-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 12A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 732505 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SVT-13 | Diodes Zetex | Trans MOSFET N-CH 100V 2.6A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SVT-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 2.6A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SVT-13 | DIODES INCORPORATED | DMN10H170SVT-13 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SVT-13 | Diodes Inc | Trans MOSFET N-CH 100V 2.6A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SVT-13 | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SVT-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 2.6A TSOT26 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SVT-7 | DIODES INCORPORATED | DMN10H170SVT-7 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SVT-7 | Diodes Inc | Trans MOSFET N-CH 100V 2.6A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SVT-7 | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 20Vgss 2.6A 1.2W | auf Bestellung 46220 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SVT-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 2.6A TSOT26 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SVT-7 | Diodes Zetex | Trans MOSFET N-CH 100V 2.6A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SVTQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SVTQ-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 2.6A TSOT26 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SVTQ-7 | DIODES INCORPORATED | DMN10H170SVTQ-7 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SVTQ-7 | Diodes Inc | 100V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SVTQ-7 | Diodes Zetex | 100V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H170SVTQ-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 2.6A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V | auf Bestellung 725 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H170SVTQ-7 | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 160mOhm 10Vgs 2.6A | auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN10H170SVTQ-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 2.6A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TSOT-26 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220L | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220L-13 | Diodes Zetex | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220L-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 1.4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V | auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220L-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220L-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220L-13 | Diodes Zetex | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220L-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 1.4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V | auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN10H220L-13 | Diodes Inc | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220L-13 | Diodes Incorporated | MOSFETs 100V N-Ch Enh FET 16Vgs 1.6A 1.3W | auf Bestellung 7641 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220L-7 | Diodes Zetex | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R | auf Bestellung 309 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220L-7 | Diodes Zetex | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R | auf Bestellung 309 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.22Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 1932 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN10H220L-7 | Diodes Zetex | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220L-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 1.4A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V | auf Bestellung 101000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220L-7 | Diodes Inc | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220L-7 | DIODES INC. | Description: DIODES INC. - DMN10H220L-7 - Leistungs-MOSFET, n-Kanal, 100 V, 1.4 A, 0.22 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 1.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.3W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.22ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 51275 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220L-7 | Diodes Zetex | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220L-7 | Diodes Incorporated | MOSFETs 100V N-Ch Enh FET 16Vgs 1.6A 1.3W | auf Bestellung 150341 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220L-7 | DIODES INC. | Description: DIODES INC. - DMN10H220L-7 - Leistungs-MOSFET, n-Kanal, 100 V, 1.4 A, 0.22 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 1.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 1.3W Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.3W Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.22ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.22ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 52847 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220L-7 | Diodes Zetex | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220L-7 | Diodes Zetex | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220L-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Pulsed drain current: 8A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.22Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 1932 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220L-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 1.4A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V | auf Bestellung 103784 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220L-7 | DIODES INC. | Description: DIODES INC. - DMN10H220L-7 - Leistungs-MOSFET, n-Kanal, 100 V, 1.4 A, 0.22 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 1.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.3W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.22ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LDV-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V-100V PowerDI3333-8 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LDV-13 | Diodes Incorporated | Description: MOSFET 2N-CH 100V PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LDV-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | auf Bestellung 14000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LDV-7 | Diodes Incorporated | Description: MOSFET 2N-CH 100V PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 366pF @ 50V Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXC) | auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LDV-7 | DIODES INC. | Description: DIODES INC. - DMN10H220LDV-7 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 10.5 A, 10.5 A, 0.17 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 10.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 100V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 10.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.17ohm Verlustleistung, p-Kanal: 40W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: PowerDI3333 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.17ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 40W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1270 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LDV-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V-100V PowerDI3333-8 T&R 2K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LDV-7 | DIODES INC. | Description: DIODES INC. - DMN10H220LDV-7 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 10.5 A, 10.5 A, 0.17 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 10.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 100V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 10.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.17ohm Verlustleistung, p-Kanal: 40W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Bauform - Transistor: PowerDI3333 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.17ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 40W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1270 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LE-13 | Diodes Zetex | Trans MOSFET N-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LE-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 2.3A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V | auf Bestellung 215000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LE-13 | Diodes Incorporated | MOSFETs FET BVDSS 61V 100V N-Ch 3A 401pF 8.3nC | auf Bestellung 8426 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LE-13 | DIODES INC. | Description: DIODES INC. - DMN10H220LE-13 - Leistungs-MOSFET, n-Kanal, 100 V, 6.2 A, 0.155 ohm, SOT-223, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 6.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 14W Bauform - Transistor: SOT-223 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.155ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1350 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LE-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.8A Pulsed drain current: 8A Power dissipation: 1.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LE-13 | Diodes Zetex | Trans MOSFET N-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LE-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 2.3A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V | auf Bestellung 216941 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LE-13 | Diodes Zetex | Trans MOSFET N-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R | auf Bestellung 92500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LE-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.8A Pulsed drain current: 8A Power dissipation: 1.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LE-13 | Diodes Inc | Trans MOSFET N-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LE-13 | DIODES INC. | Description: DIODES INC. - DMN10H220LE-13 - Leistungs-MOSFET, n-Kanal, 100 V, 6.2 A, 0.155 ohm, SOT-223, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 6.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 14W Bauform - Transistor: SOT-223 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.155ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1350 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LFDF-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V U-DFN2020 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LFDF-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LFDF-7 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V U-DFN2020 Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V | auf Bestellung 7790 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.7A Pulsed drain current: 8.8A Power dissipation: 1W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LFDF-7 | DIODES INC. | Description: DIODES INC. - DMN10H220LFDF-7 - Leistungs-MOSFET, n-Kanal, 100 V, 2.2 A, 0.174 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 2.2A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.1W Anzahl der Pins: 6Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.174ohm | auf Bestellung 2760 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LFDF-7 | Diodes Zetex | 100V N-Channel Enhancement Mode MOSFET | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.7A Pulsed drain current: 8.8A Power dissipation: 1W Case: U-DFN2020-6 Gate-source voltage: ±20V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LFDF-7 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V U-DFN2020 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 225mOhm @ 2A, 10V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LFDF-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 3K | auf Bestellung 5715 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LFDF-7 | Diodes Inc | 100V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LFDF-7 | DIODES INC. | Description: DIODES INC. - DMN10H220LFDF-7 - Leistungs-MOSFET, n-Kanal, 100 V, 2.2 A, 0.174 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 2.2A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.1W Anzahl der Pins: 6Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.174ohm | auf Bestellung 2760 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LFDF-7 | Diodes Zetex | 100V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LFVW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V-100V PowerDI3333-8/SWP T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LFVW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V POWERDI33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LFVW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 9A Pulsed drain current: 44A Power dissipation: 2.4W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LFVW-7 | Diodes Inc | 100V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LFVW-7 | Diodes Incorporated | Description: MOSFET BVDSS: 61V~100V POWERDI33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 366 pF @ 50 V | auf Bestellung 44000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LFVW-7 | DIODES INC. | Description: DIODES INC. - DMN10H220LFVW-7 - Leistungs-MOSFET, n-Kanal, 100 V, 11 A, 0.164 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 2.4W Anzahl der Pins: 8Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.164ohm | auf Bestellung 2050 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LFVW-7 | Diodes Zetex | 100V N-Channel Enhancement Mode MOSFET | auf Bestellung 44000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LFVW-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 9A Pulsed drain current: 44A Power dissipation: 2.4W Case: PowerDI®3333-8 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LFVW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V-100V PowerDI3333-8/SWP T&R 2K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LFVW-7 | DIODES INC. | Description: DIODES INC. - DMN10H220LFVW-7 - Leistungs-MOSFET, n-Kanal, 100 V, 11 A, 0.164 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 11A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 2.4W Anzahl der Pins: 8Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.164ohm | auf Bestellung 2050 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LK3-13 | Diodes Zetex | High Enhancement Mode MOSFET | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.7A Pulsed drain current: 30A Power dissipation: 7.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 2467 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LK3-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V-100V TO252 T&R 2.5K | auf Bestellung 10487 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 7.5A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V Power Dissipation (Max): 18.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V | auf Bestellung 56467 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LK3-13 | DIODES INC. | Description: DIODES INC. - DMN10H220LK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 7.5 A, 0.179 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 7.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 18.7W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.179ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1895 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.7A; Idm: 30A; 7.5W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.7A Pulsed drain current: 30A Power dissipation: 7.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 2467 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN10H220LK3-13 | Diodes Inc | High Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LK3-13 | Diodes Zetex | High Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 7.5A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V Power Dissipation (Max): 18.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 384 pF @ 25 V | auf Bestellung 52500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LK3-13 | DIODES INC. | Description: DIODES INC. - DMN10H220LK3-13 - Leistungs-MOSFET, n-Kanal, 100 V, 7.5 A, 0.179 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 7.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 18.7W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.179ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 1895 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LPDW-13 | Diodes Incorporated | Description: MOSFET 2N-CH 100V 8A POWERDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 384pF @ 25V Rds On (Max) @ Id, Vgs: 222mOhm @ 2A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type R) | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LPDW-13 | DIODES INC. | Description: DIODES INC. - DMN10H220LPDW-13 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 8 A, 8 A, 0.168 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8A hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 100V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8A Drain-Source-Durchgangswiderstand, p-Kanal: 0.168ohm Verlustleistung, p-Kanal: 2.2W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Anzahl der Pins: 8Pins Drain-Source-Durchgangswiderstand, n-Kanal: 0.168ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 2.2W Betriebstemperatur, max.: 150°C | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LPDW-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.4A Pulsed drain current: 32A Power dissipation: 2.2W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LPDW-13 | Diodes Inc | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LPDW-13 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | auf Bestellung 12500 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LPDW-13 | DIODES INC. | Description: DIODES INC. - DMN10H220LPDW-13 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 8 A, 8 A, 0.168 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8A hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 100V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8A Drain-Source-Durchgangswiderstand, p-Kanal: 0.168ohm Verlustleistung, p-Kanal: 2.2W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Anzahl der Pins: 8Pins Drain-Source-Durchgangswiderstand, n-Kanal: 0.168ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 2.2W Betriebstemperatur, max.: 150°C | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LPDW-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.4A Pulsed drain current: 32A Power dissipation: 2.2W Case: PowerDI5060-8 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 6.7nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LPDW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS61V-100V | auf Bestellung 2480 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LPDW-13 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LQ-13 | Diodes Zetex | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LQ-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 1.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V-100V SOT23 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LQ-13 | Diodes Zetex | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LQ-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 1.6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 61V-100V SOT23 T&R 3K | auf Bestellung 162863 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LQ-7 | DIODES INC. | Description: DIODES INC. - DMN10H220LQ-7 - Leistungs-MOSFET, n-Kanal, 100 V, 1.4 A, 0.22 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 1.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.3W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.22ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2755 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LQ-7 | Diodes Zetex | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LQ-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 1.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V | auf Bestellung 548640 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | auf Bestellung 2790 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LQ-7 | Diodes Zetex | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LQ-7 | Diodes Zetex | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.3A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke | auf Bestellung 2790 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN10H220LQ-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 1.6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V | auf Bestellung 543000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LQ-7 | DIODES INC. | Description: DIODES INC. - DMN10H220LQ-7 - Leistungs-MOSFET, n-Kanal, 100 V, 1.4 A, 0.22 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 1.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1.3W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pins Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.22ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2755 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LQ-7 | Diodes Inc | Trans MOSFET N-CH 100V 1.6A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LQ-7 | Diodes Zetex | Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LVT | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LVT-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 1.87A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.67W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LVT-13 | Diodes Incorporated | MOSFETs 100V N-Ch Enh FET 220mOhm 16Vgs | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LVT-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.79A Pulsed drain current: 6.6A Power dissipation: 1.07W Case: TSOT26 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LVT-7 | DIODES INC. | Description: DIODES INC. - DMN10H220LVT-7 - Leistungs-MOSFET, n-Kanal, 100 V, 2.24 A, 0.172 ohm, TSOT-26, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 2.24A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.8V euEccn: NLR Verlustleistung: 1.67W Bauform - Transistor: TSOT-26 Anzahl der Pins: 6Pins Produktpalette: PW Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.172ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LVT-7 | Diodes Zetex | Trans MOSFET N-CH 100V 2.24A 6-Pin TSOT-26 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LVT-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 1.87A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.67W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V | auf Bestellung 26779 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LVT-7 | Diodes Zetex | Trans MOSFET N-CH 100V 2.24A 6-Pin TSOT-26 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LVT-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.79A Pulsed drain current: 6.6A Power dissipation: 1.07W Case: TSOT26 Gate-source voltage: ±16V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LVT-7 | DIODES INC. | Description: DIODES INC. - DMN10H220LVT-7 - Leistungs-MOSFET, n-Kanal, 100 V, 2.24 A, 0.172 ohm, TSOT-26, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 2.24A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.8V euEccn: NLR Verlustleistung: 1.67W Bauform - Transistor: TSOT-26 Anzahl der Pins: 6Pins Produktpalette: PW Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.172ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H220LVT-7 | Diodes Inc | Trans MOSFET N-CH 100V 2.24A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H220LVT-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 1.87A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.87A (Ta) Rds On (Max) @ Id, Vgs: 220mOhm @ 1.6A, 10V Power Dissipation (Max): 1.67W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 401 pF @ 25 V | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LVT-7 | Diodes Zetex | Trans MOSFET N-CH 100V 2.24A 6-Pin TSOT-26 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN10H220LVT-7 | Diodes Incorporated | MOSFETs 100V N-Ch Enh FET 220mOhm 16Vgs | auf Bestellung 1635 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H220LVT-7 | Diodes Zetex | Trans MOSFET N-CH 100V 2.24A 6-Pin TSOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H6D2LFDB-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H6D2LFDB-13 | Diodes Incorporated | Description: MOSFET 2N-CH 100V 0.27A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: U-DFN2020-6 (Type B) | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H6D2LFDB-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H6D2LFDB-7 | DIODES INC. | Description: DIODES INC. - DMN10H6D2LFDB-7 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 270 mA, 270 mA, 3.4 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 270mA hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 100V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 270mA Drain-Source-Durchgangswiderstand, p-Kanal: 3.4ohm Verlustleistung, p-Kanal: 1W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Anzahl der Pins: 6Pin(s) Drain-Source-Durchgangswiderstand, n-Kanal: 3.4ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 1W Betriebstemperatur, max.: 150°C | auf Bestellung 2510 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H6D2LFDB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 100V 0.27A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 50V Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: U-DFN2020-6 (Type B) | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H6D2LFDB-7 | DIODES INC. | Description: DIODES INC. - DMN10H6D2LFDB-7 - Dual-MOSFET, n-Kanal, 100 V, 100 V, 270 mA, 270 mA, 3.4 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 270mA hazardous: false rohsPhthalatesCompliant: YES Drain-Source-Spannung Vds, p-Kanal: 100V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 270mA Drain-Source-Durchgangswiderstand, p-Kanal: 3.4ohm Verlustleistung, p-Kanal: 1W Drain-Source-Spannung Vds, n-Kanal: 100V euEccn: NLR Anzahl der Pins: 6Pin(s) Drain-Source-Durchgangswiderstand, n-Kanal: 3.4ohm productTraceability: Yes-Date/Lot Code Verlustleistung, n-Kanal: 1W Betriebstemperatur, max.: 150°C | auf Bestellung 2510 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H700S-13 | Diodes Inc | Trans MOSFET N-CH 100V 0.7A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H700S-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 700MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V FET Feature: Standard Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V | auf Bestellung 9976 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H700S-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V | auf Bestellung 6816 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H700S-13 | Diodes Incorporated | Description: MOSFET N-CH 100V 700MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V FET Feature: Standard Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H700S-13 | DIODES INCORPORATED | DMN10H700S-13 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H700S-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 700MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V | auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H700S-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 61V-100V | auf Bestellung 24790 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H700S-7 | DIODES INC. | Description: DIODES INC. - DMN10H700S-7 - Leistungs-MOSFET, n-Kanal, 100 V, 700 mA, 0.54 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 700mA hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 400mW Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 400mW Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.54ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.54ohm | auf Bestellung 17366 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H700S-7 | DIODES INCORPORATED | DMN10H700S-7 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
DMN10H700S-7 | Diodes Inc | Trans MOSFET N-CH 100V 0.7A 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN10H700S-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 700MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V | auf Bestellung 31696 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN10H700S-7 | DIODES INC. | Description: DIODES INC. - DMN10H700S-7 - Leistungs-MOSFET, n-Kanal, 100 V, 700 mA, 0.54 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 700mA hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 400mW Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.54ohm | auf Bestellung 17366 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN1150UFB-7B | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 1.15A; Idm: 7A; 300mW Mounting: SMD Case: X1-DFN1006-3 Kind of package: reel; tape Power dissipation: 0.3W Drain-source voltage: 12V Drain current: 1.15A On-state resistance: 0.21Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: 7A Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1150UFB-7B | Diodes Incorporated | Description: MOSFET N-CH 12V 1.41A 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.41A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 106 pF @ 10 V | auf Bestellung 257659 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1150UFB-7B | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 1.15A; Idm: 7A; 300mW Mounting: SMD Case: X1-DFN1006-3 Kind of package: reel; tape Power dissipation: 0.3W Drain-source voltage: 12V Drain current: 1.15A On-state resistance: 0.21Ω Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: 7A | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1150UFB-7B | Diodes Incorporated | MOSFET N-CH MOSFET 12V | auf Bestellung 19099 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1150UFB-7B | Diodes Incorporated | Description: MOSFET N-CH 12V 1.41A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.41A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 106 pF @ 10 V | auf Bestellung 240000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1150UFL3-7 | Diodes Incorporated | Description: MOSFET 2N-CH 12V 2A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1310-6 (Type B) Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1150UFL3-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 1.6A; 900mW; X2-DFN1310-6 Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±6V Mounting: SMD Case: X2-DFN1310-6 Drain-source voltage: 12V Drain current: 1.6A On-state resistance: 0.21Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.9W Polarisation: unipolar Gate charge: 1.4nC | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1150UFL3-7 | Diodes Inc | Trans MOSFET N-CH 12V 2A 6-Pin X2-DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1150UFL3-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 5890 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN1150UFL3-7 | Diodes Zetex | Trans MOSFET N-CH 12V 2A 6-Pin X2-DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1150UFL3-7 | Diodes Incorporated | Description: MOSFET 2N-CH 12V 2A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 390mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 6V Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1310-6 (Type B) Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1150UFL3-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 1.6A; 900mW; X2-DFN1310-6 Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±6V Mounting: SMD Case: X2-DFN1310-6 Drain-source voltage: 12V Drain current: 1.6A On-state resistance: 0.21Ω Type of transistor: N-MOSFET x2 Power dissipation: 0.9W Polarisation: unipolar Gate charge: 1.4nC Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN11M2UCA14-7 | Diodes Incorporated | Description: MOSFET 2N-CH 12V 34A X2-TSN3027 Packaging: Tape & Reel (TR) Package / Case: 14-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 950mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 34A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 6083pF @ 6V Rds On (Max) @ Id, Vgs: 1.85mOhm @ 9.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 71nC @ 4V Vgs(th) (Max) @ Id: 1.4V @ 870µA Supplier Device Package: X2-TSN3027-14 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1250UFEL-7 | Diodes Incorporated | MOSFET 8 N-Ch FET 4.5V 280mOhm 12Vdss | auf Bestellung 3000 Stücke: Lieferzeit 122-126 Tag (e) |
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DMN1250UFEL-7 | Diodes Incorporated | Description: MOSFET 8N-CH 12V 2A U-QFN1515 Packaging: Tape & Reel (TR) Package / Case: 12-UFQFN Exposed Pad Mounting Type: Surface Mount Configuration: 8 N-Channel, Common Gate, Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 660mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-QFN1515-12 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1250UFEL-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x8; unipolar; 12V; 1.6A; Idm: 10A; 1.25W Mounting: SMD Case: U-QFN1515-12 Kind of package: reel; tape Power dissipation: 1.25W Drain-source voltage: 12V Drain current: 1.6A On-state resistance: 0.55Ω Type of transistor: N-MOSFET x8 Polarisation: unipolar Gate charge: 1.9nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 10A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1250UFEL-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x8; unipolar; 12V; 1.6A; Idm: 10A; 1.25W Mounting: SMD Case: U-QFN1515-12 Kind of package: reel; tape Power dissipation: 1.25W Drain-source voltage: 12V Drain current: 1.6A On-state resistance: 0.55Ω Type of transistor: N-MOSFET x8 Polarisation: unipolar Gate charge: 1.9nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 10A | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1250UFEL-7 | Diodes Inc | N-Channel Enhancement Mode Mosfet | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1250UFEL-7 | Diodes Incorporated | Description: MOSFET 8N-CH 12V 2A U-QFN1515 Packaging: Cut Tape (CT) Package / Case: 12-UFQFN Exposed Pad Mounting Type: Surface Mount Configuration: 8 N-Channel, Common Gate, Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 660mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 6V Rds On (Max) @ Id, Vgs: 450mOhm @ 200mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-QFN1515-12 Part Status: Active | auf Bestellung 7552 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1260UFA-7B | Diodes Incorporated | Description: MOSFET N-CH 12V 500MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 366mOhm @ 200mA, 4.5V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 0.96 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V | auf Bestellung 274610 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1260UFA-7B | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 500mA; Idm: 1.5A; 360mW Mounting: SMD Kind of package: reel; tape Gate charge: 960pC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Case: X2-DFN0806-3 Drain-source voltage: 12V Drain current: 0.5A On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 0.36W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1260UFA-7B | Diodes Inc | Trans MOSFET N-CH 12V 0.5A 3-Pin X2-DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN1260UFA-7B | Diodes Incorporated | Description: MOSFET N-CH 12V 500MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 366mOhm @ 200mA, 4.5V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN0806-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 0.96 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V | auf Bestellung 260000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1260UFA-7B | Diodes Incorporated | MOSFET 12V N-Ch Enh FET 8 VGS 60pF 0.92nC | auf Bestellung 15780 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1260UFA-7B | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 500mA; Idm: 1.5A; 360mW Mounting: SMD Kind of package: reel; tape Gate charge: 960pC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Case: X2-DFN0806-3 Drain-source voltage: 12V Drain current: 0.5A On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 0.36W Polarisation: unipolar Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN12M3UCA6-7 | DIODES INC. | Description: DIODES INC. - DMN12M3UCA6-7 - Dual-MOSFET, n-Kanal, 14 V, 14 V, 24.4 A, 24.4 A, 0.00227 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 24.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 14V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 24.4A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00227ohm Verlustleistung, p-Kanal: 1.1W Drain-Source-Spannung Vds, n-Kanal: 14V euEccn: NLR Bauform - Transistor: X4-DSN3118 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.00227ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2738 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN12M3UCA6-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V 24V X4-DSN3118-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN12M3UCA6-7 | DIODES INC. | Description: DIODES INC. - DMN12M3UCA6-7 - Dual-MOSFET, n-Kanal, 14 V, 14 V, 24.4 A, 24.4 A, 0.00227 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 24.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 14V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 24.4A Drain-Source-Durchgangswiderstand, p-Kanal: 0.00227ohm Verlustleistung, p-Kanal: 1.1W Drain-Source-Spannung Vds, n-Kanal: 14V euEccn: NLR Bauform - Transistor: X4-DSN3118 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.00227ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2738 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN12M7UCA10-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 10.8A; Idm: 80A; 1.73W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Drain current: 10.8A Pulsed drain current: 80A Power dissipation: 1.73W Case: X4-DSN3015-10 Gate-source voltage: ±8V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 35.7nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN12M7UCA10-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20.2A X4-DSN3015-10 Packaging: Cut Tape (CT) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 20.2A (Ta) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.11mA Supplier Device Package: X4-DSN3015-10 | auf Bestellung 9670 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN12M7UCA10-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 12V; 10.8A; Idm: 80A; 1.73W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 12V Drain current: 10.8A Pulsed drain current: 80A Power dissipation: 1.73W Case: X4-DSN3015-10 Gate-source voltage: ±8V On-state resistance: 6.1mΩ Mounting: SMD Gate charge: 35.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN12M7UCA10-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20.2A X4-DSN3015-10 Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 20.2A (Ta) Rds On (Max) @ Id, Vgs: 2.75mOhm @ 6A, 4.5V Vgs(th) (Max) @ Id: 1.4V @ 1.11mA Supplier Device Package: X4-DSN3015-10 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN12M7UCA10-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V X4-DSN3015-10 T&R 5K | auf Bestellung 4910 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN12M8UCA10-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V X4-DSN3015-10 T&R 5K | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN12M8UCA10-7 | Diodes Incorporated | Description: MOSFET 2N-CH 12V 25A X4-DSN3015 Packaging: Bulk Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2504pF @ 10V Rds On (Max) @ Id, Vgs: 2.8mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 36.4nC @ 4V Vgs(th) (Max) @ Id: 1.4V @ 1.11mA Supplier Device Package: X4-DSN3015-10 | auf Bestellung 4995 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN13H750S-13 | DIODES INCORPORATED | DMN13H750S-13 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
DMN13H750S-13 | Diodes Incorporated | Description: MOSFET N-CH 130V 1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 130 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN13H750S-13 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 130Vdss 20Vgss | Produkt ist nicht verfügbar | |||||||||||||||||
DMN13H750S-7 | Diodes Inc | Trans MOSFET N-CH 130V 1A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN13H750S-7 | Diodes Zetex | Trans MOSFET N-CH 130V 1A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN13H750S-7 | Diodes Incorporated | Description: MOSFET N-CH 130V 1A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 130 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN13H750S-7 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 130Vdss 20Vgss | auf Bestellung 20154 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN13H750S-7 | Diodes Zetex | Trans MOSFET N-CH 130V 1A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN13H750S-7 | Diodes Incorporated | Description: MOSFET N-CH 130V 1A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 2A, 10V Power Dissipation (Max): 770mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 130 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 25 V | auf Bestellung 14096 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN13H750S-7 | DIODES INCORPORATED | DMN13H750S-7 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||||
DMN13M9UCA6-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 2964 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN14M8UFDF-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | auf Bestellung 2845 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN15H310SE-13 | Diodes Incorporated | Description: MOSFET N-CH 150V 2A/7.1A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 7.1A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V | auf Bestellung 342500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN15H310SE-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 1.6A; Idm: 10A; 1.2W; SOT223 Mounting: SMD Case: SOT223 Kind of package: reel; tape Pulsed drain current: 10A Power dissipation: 1.2W Gate charge: 8.7nC Polarisation: unipolar Drain current: 1.6A Kind of channel: enhanced Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.33Ω Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN15H310SE-13 | Diodes Incorporated | MOSFET 150V N-Ch Enh Fet 310mOhm 10Vgs 2.0A | auf Bestellung 3176 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN15H310SE-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 1.6A; Idm: 10A; 1.2W; SOT223 Mounting: SMD Case: SOT223 Kind of package: reel; tape Pulsed drain current: 10A Power dissipation: 1.2W Gate charge: 8.7nC Polarisation: unipolar Drain current: 1.6A Kind of channel: enhanced Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 0.33Ω | Produkt ist nicht verfügbar | |||||||||||||||||
DMN15H310SE-13 | Diodes Inc | Trans MOSFET N-CH 150V 2A 4-Pin(3+Tab) SOT-223 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN15H310SE-13 | Diodes Incorporated | Description: MOSFET N-CH 150V 2A/7.1A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 7.1A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V | auf Bestellung 349123 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN15H310SK3 | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN15H310SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 150V 8.3A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V Power Dissipation (Max): 32W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 210198 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN15H310SK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 5.2A; Idm: 10A; 12W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 12W Polarisation: unipolar Gate charge: 8.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 150V Drain current: 5.2A On-state resistance: 0.35Ω Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN15H310SK3-13 | Diodes Inc | Trans MOSFET N-CH 150V 8.3A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN15H310SK3-13 | Diodes Zetex | Trans MOSFET N-CH 150V 8.3A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 120000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN15H310SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 150V 8.3A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.3A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 1.5A, 10V Power Dissipation (Max): 32W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 210000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN15H310SK3-13 | Diodes Incorporated | MOSFETs 150V N-Ch Enh FET 310mOhm 10V 8.3A | auf Bestellung 3120 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN15H310SK3-13 | Diodes Zetex | Trans MOSFET N-CH 150V 8.3A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN15H310SK3-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 5.2A; Idm: 10A; 12W; TO252 Mounting: SMD Case: TO252 Kind of package: reel; tape Power dissipation: 12W Polarisation: unipolar Gate charge: 8.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A Drain-source voltage: 150V Drain current: 5.2A On-state resistance: 0.35Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN15M3UCA6-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V 24V X3-DSN2718-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN15M3UCA6-7 | DIODES INC. | Description: DIODES INC. - DMN15M3UCA6-7 - Dual-MOSFET, n-Kanal, 14 V, 14 V, 16.5 A, 16.5 A, 0.0046 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 16.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 14V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 16.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0046ohm Verlustleistung, p-Kanal: 1W Drain-Source-Spannung Vds, n-Kanal: 14V euEccn: NLR Bauform - Transistor: X3-DSN2718 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0046ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2472 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN15M3UCA6-7 | DIODES INC. | Description: DIODES INC. - DMN15M3UCA6-7 - Dual-MOSFET, n-Kanal, 14 V, 14 V, 16.5 A, 16.5 A, 0.0046 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 16.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 14V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 16.5A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0046ohm Verlustleistung, p-Kanal: 1W Drain-Source-Spannung Vds, n-Kanal: 14V euEccn: NLR Bauform - Transistor: X3-DSN2718 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0046ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2472 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN15M5UCA6-7 | Diodes Incorporated | Description: MOSFET 2N-CH 12V X4-DSN2117-6 Packaging: Tape & Reel (TR) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 59pF @ 10V Rds On (Max) @ Id, Vgs: 5.1mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 36.6nC @ 4V Vgs(th) (Max) @ Id: 1.3V @ 840µA Supplier Device Package: X4-DSN2117-6 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN16M0UCA6-7 | Diodes Incorporated | Description: MOSFET 2N-CH 12V 17A X4-DSN2112 Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X4-DSN2112-6 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN16M0UCA6-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN16M7UCA6-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V X4-DSN2718-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN16M9UCA6-7 | Diodes Incorporated | Description: MOSFET 2 N-CHANNEL X3-DSN2718-6 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN16M9UCA6-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004DMK | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
DMN2004DMK-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.54A SOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 225mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active | auf Bestellung 173774 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004DMK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.54A 6-Pin SOT-26 T/R | auf Bestellung 1223 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2004DMK-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 225mW; SOT26 Case: SOT26 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.225W Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004DMK-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.54A SOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 225mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-26 Part Status: Active | auf Bestellung 171000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004DMK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.54A 6-Pin SOT-26 T/R | auf Bestellung 1223 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2004DMK-7 | Diodes Incorporated | MOSFETs Dual N-Channel | auf Bestellung 29812 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004DMK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.54A 6-Pin SOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004DMK-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 225mW; SOT26 Case: SOT26 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.225W Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004DMK-7 | Diodes Inc | Trans MOSFET N-CH 20V 0.54A 6-Pin SOT-26 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004DWK | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
DMN2004DWK-7 | Diodes Incorporated | MOSFET Dual N-Channel | auf Bestellung 17644 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004DWK-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.54A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 26019 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004DWK-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363 Case: SOT363 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.2W Gate charge: 0.95nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004DWK-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363 Case: SOT363 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.2W Gate charge: 0.95nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004DWK-7 | Diodes Inc | Trans MOSFET N-CH 20V 0.54A 6-Pin SOT-363 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2004DWK-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.54A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004DWK-7-R | DIODES/ZETEX | 2NxMOSFET 20V 0.54A 550mΩ 200mW DMN2004DWK-7 Diodes TDMN2004dwk Anzahl je Verpackung: 100 Stücke | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2004DWKQ-7 | Diodes Inc | Trans MOSFET N-CH 20V 0.54A Automotive 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004DWKQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363 Case: SOT363 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.2W Gate charge: 0.95nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004DWKQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004DWKQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.54A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 200mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004DWKQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363 Case: SOT363 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.2W Gate charge: 0.95nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004K | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
DMN2004K | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004K-7 | DIODES INC. | Description: DIODES INC. - DMN2004K-7 - Leistungs-MOSFET, n-Kanal, 20 V, 540 mA, 0.55 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 productTraceability: No rohsCompliant: YES Verlustleistung: 350mW Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.55ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 34154 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2004K-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2004K-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2004K-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2004K-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 630MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V | auf Bestellung 1074000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004K-7 | DIODES INC. | Description: DIODES INC. - DMN2004K-7 - Leistungs-MOSFET, n-Kanal, 20 V, 540 mA, 0.55 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 540mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 350mW Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.55ohm Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.55ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 34154 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2004K-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2004K-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23 Case: SOT23 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.35W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 0.45A Type of transistor: N-MOSFET | auf Bestellung 2420 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2004K-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-23 T/R | auf Bestellung 292 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2004K-7 | Diodes Inc | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2004K-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.45A; 0.35W; SOT23 Case: SOT23 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.35W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 0.45A Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | auf Bestellung 2420 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2004K-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.63A 3-Pin SOT-23 T/R | auf Bestellung 292 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2004K-7 | Diodes Incorporated | MOSFET 20V 540mA | auf Bestellung 73226 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004K-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 630MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 630mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V | auf Bestellung 1076656 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004K-7 NAB | DIODES/ZETEX | N-MOSFET 20V 630mA 550mΩ 350mW DMN2004K-7 Diodes TDMN2004k Anzahl je Verpackung: 100 Stücke | auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2004K-7-F | 10+ROHS SOT-23 | auf Bestellung 39000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||
DMN2004L | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
DMN2004TK-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 150mW; SOT523 Case: SOT523 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.15W Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004TK-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 540MA SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V | auf Bestellung 611571 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004TK-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 150mW; SOT523 Case: SOT523 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.15W Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004TK-7 | Diodes Inc | Trans MOSFET N-CH 20V 0.54A 3-Pin SOT-523 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004TK-7 | Diodes Incorporated | MOSFETs 20V N-CHANNEL | auf Bestellung 216198 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004TK-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 540MA SOT523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V | auf Bestellung 609000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004VK-7 | Diodes Incorporated | MOSFET 20V 540mA | auf Bestellung 13852 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004VK-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.54A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 2779767 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004VK-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.39A; 0.25W; SOT563 Case: SOT563 Mounting: SMD On-state resistance: 0.4Ω Kind of package: reel; tape Power dissipation: 0.25W Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET x2 Polarisation: unipolar Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004VK-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.54A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 2775000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004VK-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 0.39A; 0.25W; SOT563 Case: SOT563 Mounting: SMD On-state resistance: 0.4Ω Kind of package: reel; tape Power dissipation: 0.25W Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET x2 Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004VK-7 | Diodes Inc | Trans MOSFET N-CH 20V 0.54A 6-Pin SOT-563 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2004VK-7B | Diodes Inc | Dual N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004VK-7B | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.54A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 150950 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004VK-7B | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT563 T&R 8.0K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004VK-7B | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.54A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 144000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004WK | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
DMN2004WK-7 | Diodes Inc | Trans MOSFET N-CH 20V 0.54A 3-Pin SOT-323 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2004WK-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 540MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V Qualification: AEC-Q101 | auf Bestellung 6156000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004WK-7 | Diodes Incorporated | MOSFET N-Channel | auf Bestellung 38102 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004WK-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323 Case: SOT323 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.2W Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004WK-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 540MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V Qualification: AEC-Q101 | auf Bestellung 6158980 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004WK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.54A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004WK-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323 Case: SOT323 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.2W Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004WK-7 Produktcode: 183759 | Transistoren > MOSFET N-CH Gehäuse: SOT-323 Uds,V: 20 V Idd,A: 0,54 A Rds(on), Ohm: 0,7 Ohm Ciss, pF/Qg, nC: 150/ JHGF: SMD | Produkt ist nicht verfügbar | ||||||||||||||||||
DMN2004WK-7-52 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004WKQ-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004WKQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323 Case: SOT323 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.2W Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004WKQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 540MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4890000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004WKQ-7 | Diodes Inc | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2004WKQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 5883 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004WKQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 540MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Ta) Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4890000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2004WKQ-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT323 Case: SOT323 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.2W Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005DLP4K-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1310-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.35A Power dissipation: 0.4W Case: X2-DFN1310-6 Gate-source voltage: ±10V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005DLP4K-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.3A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 900mV @ 100µA Supplier Device Package: X2-DFN1310-6 (Type B) | auf Bestellung 123000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005DLP4K-7 | Diodes Inc | Trans MOSFET N-CH 20V 0.3A 6-Pin DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005DLP4K-7 | DIODES INC. | Description: DIODES INC. - DMN2005DLP4K-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 300 mA, 300 mA, 0.35 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 300mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 300mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.35ohm Verlustleistung, p-Kanal: 400mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: X2-DFN1310 Anzahl der Pins: 6Pin(s) Produktpalette: PW Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.35ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 400mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2005DLP4K-7 | Diodes Incorporated | MOSFETs N-Channel | auf Bestellung 22883 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005DLP4K-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1310-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.35A Power dissipation: 0.4W Case: X2-DFN1310-6 Gate-source voltage: ±10V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005DLP4K-7 | DIODES INC. | Description: DIODES INC. - DMN2005DLP4K-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 300 mA, 300 mA, 0.35 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 300mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 300mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.35ohm Verlustleistung, p-Kanal: 400mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: X2-DFN1310 Anzahl der Pins: 6Pin(s) Produktpalette: PW Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.35ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 400mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2005DLP4K-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 0.3A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 400mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 300mA Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Vgs(th) (Max) @ Id: 900mV @ 100µA Supplier Device Package: X2-DFN1310-6 (Type B) | auf Bestellung 132075 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005DLP4K-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.3A 6-Pin DFN T/R | auf Bestellung 102000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005K | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
DMN2005K-7 | Diodes Incorporated | MOSFET N-Channel | auf Bestellung 33044 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005K-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 873 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005K-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 300MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 2.7V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 100µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V | auf Bestellung 933000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005K-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005K-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.3A 3-Pin SOT-23 T/R | auf Bestellung 873 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005K-7 | Diodes Inc | Trans MOSFET N-CH 20V 0.3A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005K-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 300MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 200mA, 2.7V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 100µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V | auf Bestellung 935059 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005LP4K-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 200MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 100µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 3 V | auf Bestellung 1697672 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005LP4K-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.35A Power dissipation: 0.4W Case: X2-DFN1006-3 Gate-source voltage: ±10V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005LP4K-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.3A 3-Pin DFN T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005LP4K-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 350mA; 400mW; X2-DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.35A Power dissipation: 0.4W Case: X2-DFN1006-3 Gate-source voltage: ±10V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005LP4K-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.3A 3-Pin DFN T/R | auf Bestellung 1668000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005LP4K-7 | Diodes Inc | Trans MOSFET N-CH 20V 0.3A 3-Pin DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005LP4K-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 200MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 100µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 3 V | auf Bestellung 1692000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005LP4K-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.3A 3-Pin DFN T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005LP4K-7 | Diodes Incorporated | MOSFETs 20V 300mA | auf Bestellung 68939 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005LP4K-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.3A 3-Pin DFN T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005LP4K-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.3A 3-Pin DFN T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005LP4K-7-52 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X2-DFN1006- Packaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 100µA Supplier Device Package: X2-DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 37.1 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005LPK-7 | Diodes Incorporated | MOSFETs 20V 200mA | auf Bestellung 10666 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005LPK-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 440MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 450mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V | auf Bestellung 1350000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005LPK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.44A 3-Pin DFN T/R | auf Bestellung 2328 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005LPK-7 | DIODES INC. | Description: DIODES INC. - DMN2005LPK-7 - Leistungs-MOSFET, n-Kanal, 20 V, 440 mA, 0.35 ohm, X1-DFN1006, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 440mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 450mW Bauform - Transistor: X1-DFN1006 Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.35ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2910 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2005LPK-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.44A; 0.45W; X1-DFN1006-3 Case: X1-DFN1006-3 Mounting: SMD On-state resistance: 3.5Ω Kind of package: reel; tape Power dissipation: 0.45W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Drain-source voltage: 20V Drain current: 0.44A Type of transistor: N-MOSFET | auf Bestellung 1150 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005LPK-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.44A; 0.45W; X1-DFN1006-3 Case: X1-DFN1006-3 Mounting: SMD On-state resistance: 3.5Ω Kind of package: reel; tape Power dissipation: 0.45W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±10V Drain-source voltage: 20V Drain current: 0.44A Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | auf Bestellung 1150 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2005LPK-7 | DIODES INC. | Description: DIODES INC. - DMN2005LPK-7 - Leistungs-MOSFET, n-Kanal, 20 V, 440 mA, 0.35 ohm, X1-DFN1006, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 440mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 450mW Bauform - Transistor: X1-DFN1006 Anzahl der Pins: 3Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.35ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2910 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2005LPK-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 440MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 440mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 450mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 100µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V | auf Bestellung 1351957 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005LPK-7 | Diodes Zetex | Trans MOSFET N-CH 20V 0.44A 3-Pin DFN T/R | auf Bestellung 2328 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005LPK-7 | Diodes Inc | Trans MOSFET N-CH 20V 0.44A 3-Pin DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005LPK-7B | Diodes Zetex | Trans MOSFET N-CH 20V 0.44A 3-Pin X1-DFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UFG | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UFG-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 18.1A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V Power Dissipation (Max): 1.05W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V | auf Bestellung 752947 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005UFG-13 | Diodes Zetex | Trans MOSFET N-CH 20V 18A 8-Pin PowerDI EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005UFG-13 | Diodes Zetex | Trans MOSFET N-CH 20V 18A 8-Pin PowerDI EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005UFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 40A; Idm: 130A; 1.05W Type of transistor: N-MOSFET Case: PowerDI®3333-8 Mounting: SMD Power dissipation: 1.05W Kind of package: reel; tape Pulsed drain current: 130A On-state resistance: 8.7mΩ Drain-source voltage: 20V Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V Drain current: 40A | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UFG-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 40A; Idm: 130A; 1.05W Type of transistor: N-MOSFET Case: PowerDI®3333-8 Mounting: SMD Power dissipation: 1.05W Kind of package: reel; tape Pulsed drain current: 130A On-state resistance: 8.7mΩ Drain-source voltage: 20V Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±12V Drain current: 40A Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UFG-13 | Diodes Incorporated | MOSFETs 20V N-Ch Enh Mode FET 12Vgss 1.05W | auf Bestellung 4128 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005UFG-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 18.1A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V Power Dissipation (Max): 1.05W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V | auf Bestellung 750000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005UFG-13 | Diodes Inc | Trans MOSFET N-CH 20V 18A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UFG-13 | DIODES INC. | Description: DIODES INC. - DMN2005UFG-13 - Leistungs-MOSFET, n-Kanal, 20 V, 50 A, 0.004 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 1.05W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.004ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2920 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2005UFG-13 | Diodes Zetex | Trans MOSFET N-CH 20V 18A 8-Pin PowerDI EP T/R | auf Bestellung 747000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005UFG-13 | DIODES INC. | Description: DIODES INC. - DMN2005UFG-13 - Leistungs-MOSFET, n-Kanal, 20 V, 50 A, 0.004 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 1.05W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.004ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2920 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2005UFG-7 | Diodes Incorporated | MOSFET 20V N-Ch Enh FET 6495pF 66.8nC | auf Bestellung 5065 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005UFG-7 | Diodes Zetex | Trans MOSFET N-CH 20V 18A 8-Pin PowerDI EP T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005UFG-7 | Diodes Inc | Trans MOSFET N-CH 20V 18A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UFG-7 | DIODES INC. | Description: DIODES INC. - DMN2005UFG-7 - Leistungs-MOSFET, n-Kanal, 20 V, 50 A, 0.004 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 1.05W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.004ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2005UFG-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 18.1A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V Power Dissipation (Max): 1.05W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V | auf Bestellung 77298 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005UFG-7 | Diodes Zetex | Trans MOSFET N-CH 20V 18A 8-Pin PowerDI EP T/R | auf Bestellung 72000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005UFG-7 Produktcode: 201744 | Verschiedene Bauteile > Verschiedene Bauteile 1 | Produkt ist nicht verfügbar | ||||||||||||||||||
DMN2005UFG-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 18.1A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.1A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V Power Dissipation (Max): 1.05W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V | auf Bestellung 76000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005UFG-7 | DIODES INC. | Description: DIODES INC. - DMN2005UFG-7 - Leistungs-MOSFET, n-Kanal, 20 V, 50 A, 0.004 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 50A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 700mV euEccn: NLR Verlustleistung: 1.05W Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: PW Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.004ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2005UFG-7 | Diodes Zetex | Trans MOSFET N-CH 20V 18A 8-Pin PowerDI EP T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005UFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W Case: PowerDI3333-8 Polarisation: unipolar Drain-source voltage: 20V Drain current: 14A On-state resistance: 8.7mΩ Type of transistor: N-MOSFET Power dissipation: 2.27W Kind of package: reel; tape Gate charge: 164nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 130A Mounting: SMD | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W Case: PowerDI3333-8 Polarisation: unipolar Drain-source voltage: 20V Drain current: 14A On-state resistance: 8.7mΩ Type of transistor: N-MOSFET Power dissipation: 2.27W Kind of package: reel; tape Gate charge: 164nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 130A Mounting: SMD Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UFGQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W Type of transistor: N-MOSFET Case: PowerDI3333-8 Application: automotive industry Mounting: SMD Power dissipation: 2.27W Kind of package: reel; tape Pulsed drain current: 130A On-state resistance: 8.7mΩ Drain-source voltage: 20V Polarisation: unipolar Gate charge: 164nC Kind of channel: enhanced Gate-source voltage: ±12V Drain current: 14A | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UFGQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 14A; Idm: 130A; 2.27W Type of transistor: N-MOSFET Case: PowerDI3333-8 Application: automotive industry Mounting: SMD Power dissipation: 2.27W Kind of package: reel; tape Pulsed drain current: 130A On-state resistance: 8.7mΩ Drain-source voltage: 20V Polarisation: unipolar Gate charge: 164nC Kind of channel: enhanced Gate-source voltage: ±12V Drain current: 14A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UFGQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UFGQ-13 | Diodes Inc | 20V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UFGQ-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 18A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V Power Dissipation (Max): 1.05W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UFGQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UFGQ-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 18A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V Power Dissipation (Max): 1.05W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI3333-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005UFGQ-7 | Diodes Zetex | 20V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Automotive AEC-Q101 | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005UPS-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 20A POWERDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5337 pF @ 10 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005UPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 15A; Idm: 150A; 2.5W Mounting: SMD Type of transistor: N-MOSFET Drain current: 15A Drain-source voltage: 20V Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Case: PowerDI5060-8 Gate charge: 142nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 150A On-state resistance: 8.7mΩ | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UPS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 15A; Idm: 150A; 2.5W Mounting: SMD Type of transistor: N-MOSFET Drain current: 15A Drain-source voltage: 20V Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Case: PowerDI5060-8 Gate charge: 142nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 150A On-state resistance: 8.7mΩ Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UPS-13 | Diodes Zetex | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005UPS-13 | Diodes Inc | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2005UPS-13 | Diodes Zetex | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005UPS-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 20A POWERDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5337 pF @ 10 V | auf Bestellung 7375 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005UPS-13 | Diodes Incorporated | MOSFETs N-Ch Enh Mode FET 20Vdss 12Vgss 30A | auf Bestellung 2454 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005UPS-13 | Diodes Zetex | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 2488 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2008LFU-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 14.5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.5A Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2008LFU-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2008LFU-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.5A; Idm: 75A; 1.7W Kind of package: reel; tape Drain current: 11.5A On-state resistance: 9.6mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 42.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 75A Mounting: SMD Case: U-DFN2030-6 Drain-source voltage: 20V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2008LFU-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.5A; Idm: 75A; 1.7W Kind of package: reel; tape Drain current: 11.5A On-state resistance: 9.6mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 42.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 75A Mounting: SMD Case: U-DFN2030-6 Drain-source voltage: 20V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2008LFU-13 | Diodes Inc | Trans MOSFET N-CH 20V 14.5A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2008LFU-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.5A; Idm: 75A; 1.7W Kind of package: reel; tape Drain current: 11.5A On-state resistance: 9.6mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 42.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 75A Mounting: SMD Case: U-DFN2030-6 Drain-source voltage: 20V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2008LFU-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.5A; Idm: 75A; 1.7W Kind of package: reel; tape Drain current: 11.5A On-state resistance: 9.6mΩ Type of transistor: N-MOSFET Power dissipation: 1.7W Polarisation: unipolar Gate charge: 42.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 75A Mounting: SMD Case: U-DFN2030-6 Drain-source voltage: 20V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2008LFU-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 14.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.5A Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250A Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active | auf Bestellung 126467 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2008LFU-7 | Diodes Inc | Trans MOSFET N-CH 20V 14.5A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2008LFU-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 14.5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 14.5A Input Capacitance (Ciss) (Max) @ Vds: 1418pF @ 10V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 5.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 42.3nC @ 10V Vgs(th) (Max) @ Id: 1.5V @ 250A Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active | auf Bestellung 126000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2008LFU-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 6510 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2009LSS-13 | Diodes Inc | Trans MOSFET N-CH 20V 12A 8-Pin SOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2009LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 12A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 58.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2555 pF @ 10 V | auf Bestellung 31957 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2009LSS-13 | Diodes Incorporated | MOSFET NMOS SINGLE N-CHANNL 20V 12A | auf Bestellung 5979 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN2009LSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; Idm: 42A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 12mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 2W Drain current: 9.6A Drain-source voltage: 20V Pulsed drain current: 42A Gate-source voltage: ±12V Type of transistor: N-MOSFET Gate charge: 58.3nC | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2009LSS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; Idm: 42A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 12mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 2W Drain current: 9.6A Drain-source voltage: 20V Pulsed drain current: 42A Gate-source voltage: ±12V Type of transistor: N-MOSFET Gate charge: 58.3nC | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2009LSS-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 12A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 58.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2555 pF @ 10 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2009UCA4-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V 24V X4-DSN1717-4 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2009UFDF-13 | Diodes Inc | Transistor MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2009USS-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1706 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2009USS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.7A; Idm: 100A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 12mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 2W Drain current: 9.7A Drain-source voltage: 20V Pulsed drain current: 100A Gate-source voltage: ±12V Type of transistor: N-MOSFET Gate charge: 34nC | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2009USS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.7A; Idm: 100A; 2W; SO8 Mounting: SMD Case: SO8 Kind of package: reel; tape On-state resistance: 12mΩ Polarisation: unipolar Kind of channel: enhanced Power dissipation: 2W Drain current: 9.7A Drain-source voltage: 20V Pulsed drain current: 100A Gate-source voltage: ±12V Type of transistor: N-MOSFET Gate charge: 34nC | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2009USS-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.1A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1706 pF @ 10 V | auf Bestellung 1732 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2009USS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 6594 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2010UDZ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 11A U-DFN2535-6 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN2010UDZ-7 | Diodes Incorporated | MOSFET Dual N-Ch Enh FET 24V 8Vgss 0.7W | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2010UDZ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 11A U-DFN2535-6 | auf Bestellung 10644 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN2011UFDE-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 11.7A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3372 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2011UFDE-13 | Diodes Incorporated | MOSFETs 20V N-Ch Enh Mode 12Vgss 80A .61W | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2011UFDE-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 11.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.27W Polarisation: unipolar Kind of package: reel; tape Gate charge: 84nC Kind of channel: enhanced Gate-source voltage: ±12V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2011UFDE-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.27W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 11.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.27W Polarisation: unipolar Kind of package: reel; tape Gate charge: 84nC Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2011UFDE-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 11.7A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V | auf Bestellung 126000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2011UFDE-7 | DIODES INC. | Description: DIODES INC. - DMN2011UFDE-7 - Leistungs-MOSFET, n-Kanal, 20 V, 11.7 A, 0.0065 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 11.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 1.97W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0065ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2234 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2011UFDE-7 | Diodes Incorporated | MOSFETs 20V N-Ch Enh Mode 12Vgss 80A .61W | auf Bestellung 74368 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2011UFDE-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 11.7A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V | auf Bestellung 128393 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2011UFDE-7 | DIODES INC. | Description: DIODES INC. - DMN2011UFDE-7 - Leistungs-MOSFET, n-Kanal, 20 V, 11.7 A, 0.0065 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 11.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 1.97W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0065ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2234 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2011UFDF-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2011UFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 14.2A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2011UFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 11.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±12V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2011UFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 11.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2011UFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 14.2A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V | auf Bestellung 4676 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN2011UFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 14.2A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2011UFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 11.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±12V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2011UFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 11.4A; Idm: 80A; 1.3W Mounting: SMD Case: U-DFN2020-6 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 11.4A On-state resistance: 35mΩ Type of transistor: N-MOSFET Power dissipation: 1.3W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2011UFDF-7 | Diodes Inc | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2011UFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 14.2A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2248 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2011UFDF-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K | auf Bestellung 3309 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2011UFX-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 12.2A 4VDFN Packaging: Cut Tape (CT) Package / Case: 4-VFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: V-DFN2050-4 Part Status: Active | auf Bestellung 7101 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2011UFX-7 | Diodes Incorporated | MOSFETs Dual N-Ch Enh FET 20Vds 12Vgs 2248pF | auf Bestellung 5945 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2011UFX-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 12.2A 4VDFN Packaging: Tape & Reel (TR) Package / Case: 4-VFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 2248pF @ 10V Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: V-DFN2050-4 Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2011UFX-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W Mounting: SMD Case: V-DFN2050-4 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 9.8A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±12V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2011UFX-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.8A; Idm: 80A; 2.1W Mounting: SMD Case: V-DFN2050-4 Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 9.8A On-state resistance: 13mΩ Type of transistor: N-MOSFET Power dissipation: 2.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhanced Gate-source voltage: ±12V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2011UTS-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 21A 8TSSOP | auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2011UTS-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 21A 8TSSOP | auf Bestellung 12723 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2011UTS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 284 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2012UCA6-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V X3-DSN2718- | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2012UCA6-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2013UFDE-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | auf Bestellung 2167 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2013UFDE-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 10.5A 6UDFN | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2013UFDE-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W Type of transistor: N-MOSFET Case: U-DFN2020-6 Mounting: SMD Power dissipation: 1.31W Kind of package: reel; tape Pulsed drain current: 80A On-state resistance: 50mΩ Drain-source voltage: 20V Polarisation: unipolar Gate charge: 25.8nC Kind of channel: enhanced Gate-source voltage: ±8V Drain current: 10A | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2013UFDE-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W Type of transistor: N-MOSFET Case: U-DFN2020-6 Mounting: SMD Power dissipation: 1.31W Kind of package: reel; tape Pulsed drain current: 80A On-state resistance: 50mΩ Drain-source voltage: 20V Polarisation: unipolar Gate charge: 25.8nC Kind of channel: enhanced Gate-source voltage: ±8V Drain current: 10A Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2013UFDE-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 10.5A 6UDFN | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2013UFDEQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2013UFX-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 10A 6-DFN | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2013UFX-7 | Diodes Zetex | Trans MOSFET N-CH 20V 10A 6-Pin WDFN EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2013UFX-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 10A 6-DFN | auf Bestellung 2828 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN2013UFX-7 | Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 8Vgss 10A 0.78W | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2013UFX-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 10A 6-DFN | auf Bestellung 2828 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN2014LHAB-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 9A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2014LHAB-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 9A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2014LHAB-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V U-DFN2030-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2014LHAB-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.4A; Idm: 45A; 1.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.4A Pulsed drain current: 45A Power dissipation: 1.1W Case: U-DFN2030-6 Gate-source voltage: ±12V On-state resistance: 28mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2014LHAB-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.4A; Idm: 45A; 1.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.4A Pulsed drain current: 45A Power dissipation: 1.1W Case: U-DFN2030-6 Gate-source voltage: ±12V On-state resistance: 28mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2014LHAB-7 | Diodes Zetex | Trans MOSFET N-CH 20V 9A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2014LHAB-7 | Diodes Incorporated | MOSFET FET BVDSS 8V 24V N-Ch Dual 20V 1550pF | auf Bestellung 2763 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2014LHAB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 9A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active | auf Bestellung 110886 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2014LHAB-7 | Diodes Zetex | Trans MOSFET N-CH 20V 9A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2014LHAB-7 | Diodes Inc | Trans MOSFET N-CH 20V 9A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2014LHAB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 9A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active | auf Bestellung 108000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2015UFDE-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2015UFDE-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 10.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V | auf Bestellung 120015 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2015UFDE-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 10.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V | auf Bestellung 122960 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2015UFDE-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W Mounting: SMD Case: U-DFN2020-6 Gate charge: 45.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 10A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 1.31W Polarisation: unipolar Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2015UFDE-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 10A; Idm: 80A; 1.31W Mounting: SMD Case: U-DFN2020-6 Gate charge: 45.6nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 80A Drain-source voltage: 20V Drain current: 10A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 1.31W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2015UFDE-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 10.5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 8.5A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 45.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1779 pF @ 10 V | auf Bestellung 120000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2015UFDF-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2015UFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 15.2A 6UDFN | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2015UFDF-7 | DIODES INC. | Description: DIODES INC. - DMN2015UFDF-7 - Leistungs-MOSFET, n-Kanal, 20 V, 11.6 A, 0.0068 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 11.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 1.8W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0068ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2015UFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.3A; Idm: 70A; 0.5W Mounting: SMD Case: U-DFN2020-6 Gate charge: 42.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 70A Drain-source voltage: 20V Drain current: 9.3A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2015UFDF-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 2633 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2015UFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 9.3A; Idm: 70A; 0.5W Mounting: SMD Case: U-DFN2020-6 Gate charge: 42.3nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 70A Drain-source voltage: 20V Drain current: 9.3A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2015UFDF-7 | DIODES INC. | Description: DIODES INC. - DMN2015UFDF-7 - Leistungs-MOSFET, n-Kanal, 20 V, 11.6 A, 0.0068 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 11.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 1.8W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0068ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2015UFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 15.2A 6UDFN | auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN2016LFG-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 5.2A 8UDFN | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016LFG-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.2A 8-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016LFG-7 | Diodes Inc | Trans MOSFET N-CH 20V 5.2A 8-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016LFG-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 5.2A 8UDFN | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016LFG-7 | Diodes Zetex | Trans MOSFET N-CH 20V 5.2A 8-Pin DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 30A; 770mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Pulsed drain current: 30A Power dissipation: 0.77W Case: U-DFN3030-8 Gate-source voltage: ±8V On-state resistance: 30mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016LFG-7 | Diodes Incorporated | MOSFET MOSFET N-CHANNEL DFN DFN3030-8 GREEN 3K | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2016LFG-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 30A; 770mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Pulsed drain current: 30A Power dissipation: 0.77W Case: U-DFN3030-8 Gate-source voltage: ±8V On-state resistance: 30mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016LHAB-7 | Diodes Inc | Trans MOSFET N-CH 20V 7.5A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016LHAB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 7.5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2016LHAB-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 45A; 1W; U-DFN2030-6 Case: U-DFN2030-6 Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 45A Power dissipation: 1W Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 30mΩ Drain current: 6A Kind of package: reel; tape Drain-source voltage: 20V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016LHAB-7 | Diodes Incorporated | MOSFET DUAL N-CH MOSFET 20V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN2016LHAB-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 45A; 1W; U-DFN2030-6 Case: U-DFN2030-6 Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 45A Power dissipation: 1W Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET On-state resistance: 30mΩ Drain current: 6A Kind of package: reel; tape Drain-source voltage: 20V Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016LHAB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 7.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 10V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2016UFX-7 | Diodes Zetex | Dual N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016UFX-7 | Diodes Incorporated | MOSFETs MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016UFX-7 | Diodes Incorporated | Description: MOSFET 2N-CH 24V 9.9A 4VDFN Packaging: Tape & Reel (TR) Package / Case: 4-VFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.07W (Ta) Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: V-DFN2050-4 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016UTS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.73A; Idm: 36A; 880mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.73A Pulsed drain current: 36A Power dissipation: 0.88W Case: TSSOP8 Gate-source voltage: ±8V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016UTS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.73A; Idm: 36A; 880mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.73A Pulsed drain current: 36A Power dissipation: 0.88W Case: TSSOP8 Gate-source voltage: ±8V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 16.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016UTS-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 8.58A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 880mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.58A Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 10V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP | auf Bestellung 120000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2016UTS-13 | Diodes Zetex | Trans MOSFET N-CH 20V 8.58A 8-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016UTS-13 | Diodes Zetex | Trans MOSFET N-CH 20V 8.58A 8-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016UTS-13 | Diodes Incorporated | MOSFET N-Ch Dual MOSFET 20V VDSS 8V VGSS | auf Bestellung 10583 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2016UTS-13 | Diodes Inc | Trans MOSFET N-CH 20V 8.58A 8-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2016UTS-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 8.58A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 880mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8.58A Input Capacitance (Ciss) (Max) @ Vds: 1495pF @ 10V Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP | auf Bestellung 122065 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2019UTS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V 24V TSSOP-8 T&R 2.5 | auf Bestellung 2357 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2019UTS-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 5.4A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 780mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Rds On (Max) @ Id, Vgs: 18.5mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active | auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2019UTS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; Idm: 30A; 780mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.3A Pulsed drain current: 30A Power dissipation: 0.78W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 31mΩ Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2019UTS-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.3A; Idm: 30A; 780mW; TSSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.3A Pulsed drain current: 30A Power dissipation: 0.78W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 31mΩ Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2019UTS-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 5.4A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 780mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.4A Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V Rds On (Max) @ Id, Vgs: 18.5mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 8-TSSOP Part Status: Active | auf Bestellung 102324 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2020LSN-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 6.9A SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9.4A, 4.5V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1149 pF @ 10 V | auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2020LSN-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; Idm: 30A; 0.61W; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.5A Pulsed drain current: 30A Power dissipation: 0.61W Case: SC59 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | auf Bestellung 3254 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2020LSN-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.5A; Idm: 30A; 0.61W; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.5A Pulsed drain current: 30A Power dissipation: 0.61W Case: SC59 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | auf Bestellung 3254 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2020LSN-7 | Diodes Inc | Trans MOSFET N-CH 20V 6.9A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2020LSN-7 | DIODES INC. | Description: DIODES INC. - DMN2020LSN-7 - Leistungs-MOSFET, n-Kanal, 20 V, 6.9 A, 0.013 ohm, SC-59, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 610mW Bauform - Transistor: SC-59 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.013ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2559 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2020LSN-7 | Diodes Zetex | Trans MOSFET N-CH 20V 6.9A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2020LSN-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 6.9A SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 9.4A, 4.5V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1149 pF @ 10 V | auf Bestellung 90541 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2020LSN-7 | DIODES INC. | Description: DIODES INC. - DMN2020LSN-7 - Leistungs-MOSFET, n-Kanal, 20 V, 6.9 A, 0.013 ohm, SC-59, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 610mW Bauform - Transistor: SC-59 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.013ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2559 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2020LSN-7 | Diodes Zetex | Trans MOSFET N-CH 20V 6.9A 3-Pin SC-59 T/R | auf Bestellung 2318 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2020LSN-7 | Diodes Incorporated | MOSFET MOSFET,N-CHANNEL | auf Bestellung 19820 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2020LSN-7 | Diodes Zetex | Trans MOSFET N-CH 20V 6.9A 3-Pin SC-59 T/R | auf Bestellung 2318 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2020UFCL-7 | Diodes Inc | Trans MOSFET N-CH 20V 9A 6-Pin X1-DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2020UFCL-7 | Diodes Zetex | Trans MOSFET N-CH 20V 9A 6-Pin X1-DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2020UFCL-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 9A X1-DFN1616-6 Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: X1-DFN1616-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V | auf Bestellung 48211 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2020UFCL-7 | Diodes Incorporated | MOSFET 20V N-Ch Enh FET 0.61W 1788pF 21.5nC | auf Bestellung 9246 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2020UFCL-7 | Diodes Zetex | Trans MOSFET N-CH 20V 9A 6-Pin X1-DFN EP T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2020UFCL-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 9A X1-DFN1616-6 Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: X1-DFN1616-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V | auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2020UFCL-7 | Diodes Zetex | Trans MOSFET N-CH 20V 9A 6-Pin X1-DFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2020UFCL-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 45A; 610mW Type of transistor: N-MOSFET Case: X1-DFN1616-6 Mounting: SMD Power dissipation: 0.61W Kind of package: reel; tape Polarisation: unipolar Gate charge: 21.5nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 45A Drain-source voltage: 20V Drain current: 7.1A On-state resistance: 26mΩ | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2020UFCL-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 45A; 610mW Type of transistor: N-MOSFET Case: X1-DFN1616-6 Mounting: SMD Power dissipation: 0.61W Kind of package: reel; tape Polarisation: unipolar Gate charge: 21.5nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 45A Drain-source voltage: 20V Drain current: 7.1A On-state resistance: 26mΩ Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UCA4-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X4-DSN1717-4 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UCA4-7 | Diodes Zetex | MOSFET BVDSS: 8V24V X4-DSN1717-4 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UCA4-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X4-DSN1717- Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, DSBGA Mounting Type: Surface Mount Configuration: 2 N-Channel, Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1438pF @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 4V FET Feature: Standard Vgs(th) (Max) @ Id: 1.4V @ 1mA Supplier Device Package: X4-DSN1717-4 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2022UDH-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UDH-13 | Diodes Zetex | Trans MOSFET N-CH 20V 10A 8-Pin VQFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UDH-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UDH-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V 24V V-DFN3030-8 Packaging: Tape & Reel (TR) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UDH-7 | Diodes Zetex | Trans MOSFET N-CH 20V 10A 8-Pin VQFN T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 7.9A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2022UFDF-13 | Diodes Zetex | Trans MOSFET N-CH 20V 7.9A 6-Pin UDFN EP T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2022UFDF-13 | Diodes Inc | Trans MOSFET N-CH 20V 7.9A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UFDF-13 | Diodes Zetex | Trans MOSFET N-CH 20V 7.9A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UFDF-13 | Diodes Incorporated | MOSFETs 20V N-Ch Enh Mode 8Vgss 7.9A .66W | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 7.9A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V | auf Bestellung 46979 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2022UFDF-7 | Diodes Inc | Trans MOSFET N-CH 20V 7.9A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UFDF-7 | Diodes Zetex | Trans MOSFET N-CH 20V 7.9A 6-Pin UDFN EP T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2022UFDF-7 | Diodes Incorporated | MOSFET 20V N-Ch Enh Mode 8Vgss 7.9A .66W | auf Bestellung 2046 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2022UFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; 0.42W; U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Case: U-DFN2020-6 Drain-source voltage: 20V Drain current: 5.2A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 0.42W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.2A; 0.42W; U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Case: U-DFN2020-6 Drain-source voltage: 20V Drain current: 5.2A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 0.42W Polarisation: unipolar Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UFDF-7 | Diodes Zetex | Trans MOSFET N-CH 20V 7.9A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UFDF-7 | DIODES INC. | Description: DIODES INC. - DMN2022UFDF-7 - Leistungs-MOSFET, n-Kanal, 20 V, 7.9 A, 0.015 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 7.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 2.03W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2022UFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 7.9A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2022UFDF-7 | Diodes Zetex | Trans MOSFET N-CH 20V 7.9A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UFDF-7 | DIODES INC. | Description: DIODES INC. - DMN2022UFDF-7 - Leistungs-MOSFET, n-Kanal, 20 V, 7.9 A, 0.015 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 7.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 2.03W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2022UNS-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 10.7A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXB) | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UNS-13 | Diodes Incorporated | MOSFET Dual N-Ch Enh FET 20V 10Vgss 1.2W | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UNS-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 10.7A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXB) | auf Bestellung 84000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2022UNS-7 | Diodes Zetex | Trans MOSFET N-CH 20V 10.7A 8-Pin PowerDI EP T/R | auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2022UNS-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 10.7A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXB) | auf Bestellung 84000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2022UNS-7 | Diodes Incorporated | MOSFET Dual N-Ch Enh FET 20V 10Vgss 1.2W | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2022UNS-7 | Diodes Zetex | Trans MOSFET N-CH 20V 10.7A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2023LSD | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2023UCB4-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W Mounting: SMD Case: X1-WLB1818-4 Kind of package: reel; tape Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A Drain-source voltage: 24V Drain current: 4.8A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 1.45W Polarisation: unipolar Anzahl je Verpackung: 3000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2023UCB4-7 | Diodes Zetex | Trans MOSFET N-CH 6A 4-Pin X1-WLB T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2023UCB4-7 | Diodes Incorporated | Description: MOSFET 2N-CH X1-WLB1818-4 Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.45W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X1-WLB1818-4 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2023UCB4-7 | Diodes Zetex | Trans MOSFET N-CH 6A 4-Pin X1-WLB T/R | auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2023UCB4-7 | Diodes Zetex | Trans MOSFET N-CH 6A 4-Pin X1-WLB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2023UCB4-7 | Diodes Incorporated | Description: MOSFET 2N-CH X1-WLB1818-4 Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.45W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X1-WLB1818-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 422 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2023UCB4-7 | Diodes Incorporated | MOSFET N-Ch 24Vds 12Vgs 6.0A Enh FET 2564pF | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2023UCB4-7 | Diodes Incorporated | Description: MOSFET 2N-CH X1-WLB1818-4 Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLBGA Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.45W Drain to Source Voltage (Vdss): 24V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 3333pF @ 10V Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: X1-WLB1818-4 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2995 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2023UCB4-7 | Diodes Inc | Trans MOSFET N-CH 6A 4-Pin X1-WLB T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2023UCB4-7 | Diodes Zetex | Trans MOSFET N-CH 6A 4-Pin X1-WLB T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2023UCB4-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 24V; 4.8A; Idm: 20A; 1.45W Mounting: SMD Case: X1-WLB1818-4 Kind of package: reel; tape Gate charge: 37nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A Drain-source voltage: 24V Drain current: 4.8A On-state resistance: 40mΩ Type of transistor: N-MOSFET Power dissipation: 1.45W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024LCA4-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V X4-DSN1313-4 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024LCA4-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V X4-DSN1313- Packaging: Tape & Reel (TR) | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024LCA4-7 | Diodes Zetex | MOSFET BVDSS: 8V24V X4-DSN1313-4 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024U | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024U-13 | Diodes Zetex | Trans MOSFET N-CH 20V 6.8A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024U-13 | Diodes Incorporated | MOSFET MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024U-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 6.8A SOT23 T&R 1 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024U-13 | Diodes Zetex | Trans MOSFET N-CH 20V 6.8A 3-Pin SOT-23 T/R | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2024U-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 6.8A SOT23 T&R 1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 6.8A 3-Pin SOT-23 T/R | auf Bestellung 432000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2024U-7 | Diodes Incorporated | MOSFET MOSFET | auf Bestellung 19988 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 6.8A SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V | auf Bestellung 408000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 6.8A 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2024U-7 | Diodes Inc | Trans MOSFET N-CH 20V 6.8A 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2024U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 6.8A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024U-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.5A Pulsed drain current: 45A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 36mΩ Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024U-7 | Diodes Zetex | Trans MOSFET N-CH 20V 6.8A 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2024U-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.5A Pulsed drain current: 45A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 36mΩ Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024U-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 6.8A SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V | auf Bestellung 408161 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024U-7-ML | MOSLEADER | Description: N 20V 6.8A SOT23 Packaging: Tape & Reel (TR) | auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024UDH-7 | Diodes Zetex | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UDH-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UDH-7 | Diodes Zetex | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2024UDH-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 5.2A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerUDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 950mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN3030-8 Part Status: Active | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024UFDF-13 | Diodes Inc | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W Type of transistor: N-MOSFET Case: U-DFN2020-6 Mounting: SMD Power dissipation: 1.67W Kind of package: reel; tape Pulsed drain current: 40A On-state resistance: 50mΩ Drain-source voltage: 20V Polarisation: unipolar Gate charge: 14.8nC Kind of channel: enhanced Gate-source voltage: ±10V Drain current: 5.6A | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UFDF-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 1.67W Type of transistor: N-MOSFET Case: U-DFN2020-6 Mounting: SMD Power dissipation: 1.67W Kind of package: reel; tape Pulsed drain current: 40A On-state resistance: 50mΩ Drain-source voltage: 20V Polarisation: unipolar Gate charge: 14.8nC Kind of channel: enhanced Gate-source voltage: ±10V Drain current: 5.6A Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UFDF-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UFDF-13 | Diodes Incorporated | Description: MOSFET N-CH 20V 7.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Power Dissipation (Max): 960mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UFDF-7 | Diodes Zetex | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2024UFDF-7 | DIODES INC. | Description: DIODES INC. - DMN2024UFDF-7 - Leistungs-MOSFET, n-Kanal, 20 V, 7.1 A, 0.015 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 7.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 1.67W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2470 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2024UFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 7.1A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Power Dissipation (Max): 960mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN2024UFDF-7 | Diodes Inc | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UFDF-7 | Diodes Zetex | 20V N-CHANNEL ENHANCEMENT MODE MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UFDF-7 | DIODES INC. | Description: DIODES INC. - DMN2024UFDF-7 - Leistungs-MOSFET, n-Kanal, 20 V, 7.1 A, 0.015 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 7.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 1.67W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 2470 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2024UFDF-7 | Diodes Incorporated | Description: MOSFET N-CH 20V 7.1A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Power Dissipation (Max): 960mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||
DMN2024UFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 0.96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.6A Pulsed drain current: 40A Power dissipation: 0.96W Case: U-DFN2020-6 Gate-source voltage: ±10V On-state resistance: 50mΩ Mounting: SMD Gate charge: 14.8nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UFDF-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.6A; Idm: 40A; 0.96W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.6A Pulsed drain current: 40A Power dissipation: 0.96W Case: U-DFN2020-6 Gate-source voltage: ±10V On-state resistance: 50mΩ Mounting: SMD Gate charge: 14.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UFDF-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 4326 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024UFU-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 7.5A/21A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 810mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 21A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Rds On (Max) @ Id, Vgs: 20.2mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UFU-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2030-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UFU-7 | DIODES INC. | Description: DIODES INC. - DMN2024UFU-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 21 A, 21 A, 0.0112 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 21A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 21A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0112ohm Verlustleistung, p-Kanal: 810mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: U-DFN2030 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0112ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 810mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2024UFU-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2030-6 T&R 3K | auf Bestellung 5990 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024UFU-7 | Diodes Inc | Dual N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UFU-7 | Diodes Zetex | Dual N-Channel Enhancement Mode MOSFET | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2024UFU-7 | DIODES INC. | Description: DIODES INC. - DMN2024UFU-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 21 A, 21 A, 0.0112 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 21A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 21A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0112ohm Verlustleistung, p-Kanal: 810mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: U-DFN2030 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0112ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 810mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2024UFU-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 50A; 1.71W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 6A Pulsed drain current: 50A Power dissipation: 1.71W Case: U-DFN2030-6 Gate-source voltage: ±10V On-state resistance: 23.5mΩ Mounting: SMD Gate charge: 14.8nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UFU-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6A; Idm: 50A; 1.71W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 6A Pulsed drain current: 50A Power dissipation: 1.71W Case: U-DFN2030-6 Gate-source voltage: ±10V On-state resistance: 23.5mΩ Mounting: SMD Gate charge: 14.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UFU-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 7.5A/21A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 810mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 21A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Rds On (Max) @ Id, Vgs: 20.2mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: U-DFN2030-6 (Type B) Part Status: Active | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024UFX-7 | DIODES INC. | Description: DIODES INC. - DMN2024UFX-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 8 A, 8 A, 0.011 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8A Drain-Source-Durchgangswiderstand, p-Kanal: 0.011ohm Verlustleistung, p-Kanal: 920mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: V-DFN2050 Anzahl der Pins: 4Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.011ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 920mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2024UFX-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 8A 4VDFN Packaging: Tape & Reel (TR) Package / Case: 4-VFDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 920mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 14.8nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: V-DFN2050-4 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024UFX-7 | DIODES INC. | Description: DIODES INC. - DMN2024UFX-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 8 A, 8 A, 0.011 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 8A Drain-Source-Durchgangswiderstand, p-Kanal: 0.011ohm Verlustleistung, p-Kanal: 920mW Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: V-DFN2050 Anzahl der Pins: 4Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.011ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 920mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2024UFX-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V V-DFN2050-4 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UFX-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2024UQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.5A Pulsed drain current: 45A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 36mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT23 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UQ-13 | Diodes Inc | MOSFET BVDSS: 8V24V SOT23 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UQ-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.5A; Idm: 45A; 800mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.5A Pulsed drain current: 45A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 36mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V SOT23 T&R 3K | auf Bestellung 3413 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 200010 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024UQ-7 | Diodes Inc | MOSFET BVDSS: 8V24V SOT23 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UQ-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | auf Bestellung 384000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2024UQ-7 | DIODES INC. | Description: DIODES INC. - DMN2024UQ-7 - Leistungs-MOSFET, n-Kanal, 20 V, 6.8 A, 0.016 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.016ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 5865 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2024UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.5A, 4.5V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 198000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024UQ-7 | DIODES INC. | Description: DIODES INC. - DMN2024UQ-7 - Leistungs-MOSFET, n-Kanal, 20 V, 6.8 A, 0.016 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.016ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 5865 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2024UTS-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 6.2A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 890mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 8-TSSOP | auf Bestellung 72490 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024UTS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 2405 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024UTS-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 6.2A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 890mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), 15.2A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: 8-TSSOP | auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024UTS-13 | Diodes Zetex | High Enhancement Mode MOSFET | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2024UVT-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 7A TSOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TSOT-23-6 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UVT-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UVT-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 35A; 1.6W; TSOT26 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 35A Power dissipation: 1.6W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 34mΩ Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UVT-13 | Diodes Zetex | High Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UVT-13 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 35A; 1.6W; TSOT26 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 35A Power dissipation: 1.6W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 34mΩ Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 10000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UVT-13 | Diodes Inc | High Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UVT-7 | Diodes Zetex | High Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UVT-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 7A TSOT23-6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TSOT-23-6 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UVT-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UVTQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 7A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UVTQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V TSOT26 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UVTQ-13 | Diodes Zetex | N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UVTQ-7 | DIODES INC. | Description: DIODES INC. - DMN2024UVTQ-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 7 A, 7 A, 0.019 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.019ohm Verlustleistung, p-Kanal: 1.6W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: TSOT-26 Anzahl der Pins: 6Pins Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.019ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.6W Betriebstemperatur, max.: 150°C | auf Bestellung 2915 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2024UVTQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V TSOT26 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UVTQ-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 35A; 1.6W; TSOT26 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 35A Power dissipation: 1.6W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 34mΩ Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UVTQ-7 | DIODES INCORPORATED | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5A; Idm: 35A; 1.6W; TSOT26 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 35A Power dissipation: 1.6W Case: TSOT26 Gate-source voltage: ±10V On-state resistance: 34mΩ Mounting: SMD Gate charge: 7.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UVTQ-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2024UVTQ-7 | Diodes Inc | MOSFET BVDSS: 8V24V TSOT26 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2024UVTQ-7 | DIODES INC. | Description: DIODES INC. - DMN2024UVTQ-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 7 A, 7 A, 0.019 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 7A Drain-Source-Durchgangswiderstand, p-Kanal: 0.019ohm Verlustleistung, p-Kanal: 1.6W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: TSOT-26 Anzahl der Pins: 6Pins Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.019ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.6W Betriebstemperatur, max.: 150°C | auf Bestellung 2915 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2024UVTQ-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 7A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 647pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2024UVTQ-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2025U | Diodes Incorporated | Description: DIODE Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 4.5V Power Dissipation (Max): 800mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2025U-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V SOT23 T&R 1 Packaging: Tape & Reel (TR) | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2025U-13 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2025U-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2025U-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2025U-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V | auf Bestellung 3002 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2025U-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2025U-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V-24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT-23-3 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2025U-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2025UFDB-13 | Diodes Zetex | Dual 20V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2025UFDB-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2025UFDB-13 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 6A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2025UFDB-7 | Diodes Inc | Dual 20V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2025UFDB-7 | DIODES INC. | Description: DIODES INC. - DMN2025UFDB-7 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 6 A, 6 A, 0.0185 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0185ohm Verlustleistung, p-Kanal: 1.4W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0185ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.4W Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 1570 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||
DMN2025UFDB-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||
DMN2025UFDB-7 | Diodes Incorporated | Description: MOSFET 2N-CH 20V 6A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 486pF @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 10V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2025UFDB-7 | Diodes Zetex | Dual 20V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar |