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DMN12M8UCA10-7

DMN12M8UCA10-7 Diodes Incorporated

DMN12M8UCA10.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 12V 25A X4-DSN3015
Packaging: Bulk
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 2504pF @ 10V
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 36.4nC @ 4V
Vgs(th) (Max) @ Id: 1.4V @ 1.11mA
Supplier Device Package: X4-DSN3015-10
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.11 EUR
19+ 0.96 EUR
100+ 0.67 EUR
500+ 0.56 EUR
1000+ 0.47 EUR
2000+ 0.42 EUR
Mindestbestellmenge: 16
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Technische Details DMN12M8UCA10-7 Diodes Incorporated

Description: MOSFET 2N-CH 12V 25A X4-DSN3015, Packaging: Bulk, Package / Case: 10-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 2504pF @ 10V, Rds On (Max) @ Id, Vgs: 2.8mOhm @ 6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 36.4nC @ 4V, Vgs(th) (Max) @ Id: 1.4V @ 1.11mA, Supplier Device Package: X4-DSN3015-10.

Weitere Produktangebote DMN12M8UCA10-7 nach Preis ab 0.39 EUR bis 1.15 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMN12M8UCA10-7 Hersteller : Diodes Incorporated DMN12M8UCA10.pdf MOSFET MOSFET BVDSS: 8V~24V X4-DSN3015-10 T&R 5K
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.15 EUR
10+ 1 EUR
100+ 0.69 EUR
500+ 0.57 EUR
1000+ 0.49 EUR
2500+ 0.46 EUR
5000+ 0.39 EUR
Mindestbestellmenge: 3