DMN2016UFX-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 24V 9.9A 4VDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.07W (Ta)
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V
Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: V-DFN2050-4
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Technische Details DMN2016UFX-7 Diodes Incorporated
Description: MOSFET 2N-CH 24V 9.9A 4VDFN, Packaging: Tape & Reel (TR), Package / Case: 4-VFDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.07W (Ta), Drain to Source Voltage (Vdss): 24V, Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 10V, Rds On (Max) @ Id, Vgs: 15mOhm @ 6.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: V-DFN2050-4.
Weitere Produktangebote DMN2016UFX-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMN2016UFX-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET |
Produkt ist nicht verfügbar |