auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.49 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN2005UPS-13 Diodes Zetex
Description: MOSFET N-CH 20V 20A POWERDI5060, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: PowerDI5060-8, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5337 pF @ 10 V.
Weitere Produktangebote DMN2005UPS-13 nach Preis ab 0.35 EUR bis 1.37 EUR
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DMN2005UPS-13 | Hersteller : Diodes Zetex |
 20V N-CHANNEL ENHANCEMENT MODE MOSFET |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005UPS-13 | Hersteller : Diodes Zetex |
20V N-CHANNEL ENHANCEMENT MODE MOSFET |
auf Bestellung 2488 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2005UPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 20A POWERDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5337 pF @ 10 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005UPS-13 | Hersteller : Diodes Incorporated |
MOSFETs N-Ch Enh Mode FET 20Vdss 12Vgss 30A |
auf Bestellung 2454 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005UPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 20A POWERDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: PowerDI5060-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5337 pF @ 10 V |
auf Bestellung 7375 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005UPS-13 | Hersteller : Diodes Inc |
20V N-CHANNEL ENHANCEMENT MODE MOSFET |
Produkt ist nicht verfügbar |
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| DMN2005UPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 15A; Idm: 150A; 2.5W Mounting: SMD Type of transistor: N-MOSFET Drain current: 15A Drain-source voltage: 20V Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Case: PowerDI5060-8 Gate charge: 142nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 150A On-state resistance: 8.7mΩ Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMN2005UPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 15A; Idm: 150A; 2.5W Mounting: SMD Type of transistor: N-MOSFET Drain current: 15A Drain-source voltage: 20V Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Case: PowerDI5060-8 Gate charge: 142nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 150A On-state resistance: 8.7mΩ |
Produkt ist nicht verfügbar |