auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.3 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN2022UNS-7 Diodes Zetex
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V, Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXB).
Weitere Produktangebote DMN2022UNS-7 nach Preis ab 0.32 EUR bis 0.99 EUR
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DMN2022UNS-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 10.7A PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXB) |
auf Bestellung 84000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2022UNS-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXB) |
auf Bestellung 84000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2022UNS-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 10.7A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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DMN2022UNS-7 | Hersteller : Diodes Incorporated |
MOSFET Dual N-Ch Enh FET 20V 10Vgss 1.2W |
Produkt ist nicht verfügbar |