Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4150) > Seite 39 nach 70
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APT5024BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Case: TO247-3 Mounting: THT On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 0.21µC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 500V Drain current: 22A |
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APT5024BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Case: TO247-3 Mounting: THT On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 0.21µC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 500V Drain current: 22A Anzahl je Verpackung: 1 Stücke |
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APT5024SLLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK Case: D3PAK Mounting: SMD On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 265W Polarisation: unipolar Gate charge: 43nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 500V Drain current: 22A |
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APT5024SLLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK Case: D3PAK Mounting: SMD On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 265W Polarisation: unipolar Gate charge: 43nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 500V Drain current: 22A Anzahl je Verpackung: 1 Stücke |
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APT5024SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Case: D3PAK Mounting: SMD On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 0.21µC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 500V Drain current: 22A |
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APT5024SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Case: D3PAK Mounting: SMD On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 0.21µC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 500V Drain current: 22A Anzahl je Verpackung: 1 Stücke |
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APT5028BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 20A; Idm: 80A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Pulsed drain current: 80A Power dissipation: 250W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 175nC Kind of channel: enhanced |
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APT5028BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 20A; Idm: 80A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Pulsed drain current: 80A Power dissipation: 250W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 175nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT50DF170HJ | MICROCHIP (MICROSEMI) |
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APT50GF120B2RG | MICROCHIP (MICROSEMI) |
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APT50GF120JRD | MICROCHIP (MICROSEMI) | APT50GF120JRD IGBT modules |
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APT50GF120JRDQ3 | MICROCHIP (MICROSEMI) |
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APT50GF120LRG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; NPT; 1.2kV; 75A; 781W; TO264 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 781W Case: TO264 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 68ns Turn-off time: 395ns |
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APT50GF120LRG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; NPT; 1.2kV; 75A; 781W; TO264 Type of transistor: IGBT Technology: NPT Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 781W Case: TO264 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 68ns Turn-off time: 395ns Anzahl je Verpackung: 1 Stücke |
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APT50GLQ65JU2 | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Technology: Field Stop; Trench Collector current: 50A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 140A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Application: motors Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: IGBT |
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APT50GLQ65JU2 | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A Technology: Field Stop; Trench Collector current: 50A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 140A Semiconductor structure: diode/transistor Max. off-state voltage: 650V Application: motors Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
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APT50GN120B2G | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 1.2kV Collector current: 66A Power dissipation: 543W Case: T-Max Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 315nC Kind of package: tube Turn-on time: 55ns Turn-off time: 0.6µs |
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APT50GN120B2G | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 1.2kV Collector current: 66A Power dissipation: 543W Case: T-Max Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 315nC Kind of package: tube Turn-on time: 55ns Turn-off time: 0.6µs Anzahl je Verpackung: 1 Stücke |
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APT50GN120L2DQ2G | MICROCHIP (MICROSEMI) |
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APT50GN60BDQ2G | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 64A Power dissipation: 366W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 325nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.4µs |
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APT50GN60BDQ2G | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 64A Power dissipation: 366W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 325nC Kind of package: tube Turn-on time: 45ns Turn-off time: 0.4µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT50GN60BDQ3G | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; Field Stop; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector current: 64A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 150A Turn-on time: 45ns Turn-off time: 0.4µs Collector-emitter voltage: 600V Power dissipation: 366W Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 325nC |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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APT50GN60BDQ3G | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; Field Stop; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector current: 64A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 150A Turn-on time: 45ns Turn-off time: 0.4µs Collector-emitter voltage: 600V Power dissipation: 366W Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 325nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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APT50GN60BG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector current: 64A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 150A Turn-on time: 45ns Turn-off time: 0.4µs Collector-emitter voltage: 600V Power dissipation: 366W Kind of package: tube Gate charge: 325nC |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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APT50GN60BG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector current: 64A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 150A Turn-on time: 45ns Turn-off time: 0.4µs Collector-emitter voltage: 600V Power dissipation: 366W Kind of package: tube Gate charge: 325nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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APT50GP60B2DQ2G | MICROCHIP (MICROSEMI) |
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APT50GP60BG | MICROCHIP (MICROSEMI) |
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APT50GP60J | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 46A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 190A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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APT50GP60J | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 46A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 190A Technology: POWER MOS 7®; PT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT50GP60JDQ2 | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 46A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 190A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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APT50GP60JDQ2 | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 46A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 190A Technology: POWER MOS 7®; PT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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APT50GR120B2 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max Mounting: THT Power dissipation: 694W Kind of package: tube Gate charge: 330nC Technology: NPT; POWER MOS 8® Case: T-Max Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 200A Turn-on time: 66ns Turn-off time: 324ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
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APT50GR120B2 | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max Mounting: THT Power dissipation: 694W Kind of package: tube Gate charge: 330nC Technology: NPT; POWER MOS 8® Case: T-Max Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 200A Turn-on time: 66ns Turn-off time: 324ns Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT50GR120JD30 | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Collector current: 50A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 200A Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
Produkt ist nicht verfügbar |
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APT50GR120JD30 | MICROCHIP (MICROSEMI) |
![]() Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8® Collector current: 50A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 200A Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT50GR120L | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264 Mounting: THT Power dissipation: 694W Kind of package: tube Gate charge: 330nC Technology: NPT; POWER MOS 8® Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 200A Turn-on time: 66ns Turn-off time: 324ns Type of transistor: IGBT |
Produkt ist nicht verfügbar |
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APT50GR120L | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264 Mounting: THT Power dissipation: 694W Kind of package: tube Gate charge: 330nC Technology: NPT; POWER MOS 8® Case: TO264 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 200A Turn-on time: 66ns Turn-off time: 324ns Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT50GT120B2RDQ2G | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Turn-on time: 77ns Turn-off time: 303ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 340nC Technology: NPT Case: T-Max |
Produkt ist nicht verfügbar |
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APT50GT120B2RDQ2G | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Turn-on time: 77ns Turn-off time: 303ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 340nC Technology: NPT Case: T-Max Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT50GT120B2RG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Turn-on time: 77ns Turn-off time: 303ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 340nC Technology: NPT Case: T-Max |
Produkt ist nicht verfügbar |
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APT50GT120B2RG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max Mounting: THT Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 50A Pulsed collector current: 150A Turn-on time: 77ns Turn-off time: 303ns Type of transistor: IGBT Power dissipation: 625W Kind of package: tube Gate charge: 340nC Technology: NPT Case: T-Max Anzahl je Verpackung: 1 Stücke |
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APT50GT120JU2 | MICROCHIP (MICROSEMI) |
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APT50GT120JU3 | MICROCHIP (MICROSEMI) |
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APT50GT120LRDQ2G | MICROCHIP (MICROSEMI) |
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APT50GT120LRG | MICROCHIP (MICROSEMI) |
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APT50M38JFLL | MICROCHIP (MICROSEMI) | APT50M38JFLL Transistor modules MOSFET |
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APT50M38JLL | MICROCHIP (MICROSEMI) |
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APT50M50JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 71A On-state resistance: 50mΩ Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 284A |
Produkt ist nicht verfügbar |
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APT50M50JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 71A On-state resistance: 50mΩ Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 284A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT50M50JLL | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 71A On-state resistance: 50mΩ Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 284A |
Produkt ist nicht verfügbar |
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APT50M50JLL | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 71A On-state resistance: 50mΩ Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 284A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT50M50JVFR | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 77A On-state resistance: 50mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 308A |
Produkt ist nicht verfügbar |
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APT50M50JVFR | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 77A On-state resistance: 50mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 308A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT50M50JVR | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 77A On-state resistance: 50mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 308A |
Produkt ist nicht verfügbar |
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APT50M50JVR | MICROCHIP (MICROSEMI) |
![]() Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 77A On-state resistance: 50mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 308A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT50M50L2LLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 89A; Idm: 356A; 893W; TO264MAX Case: TO264MAX Mounting: THT Drain-source voltage: 500V Drain current: 89A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 200nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 356A |
Produkt ist nicht verfügbar |
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APT50M50L2LLG | MICROCHIP (MICROSEMI) |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 89A; Idm: 356A; 893W; TO264MAX Case: TO264MAX Mounting: THT Drain-source voltage: 500V Drain current: 89A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 200nC Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 356A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT50M60L2VRG | MICROCHIP (MICROSEMI) | APT50M60L2VRG THT N channel transistors |
Produkt ist nicht verfügbar |
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APT50M65B2FLLG | MICROCHIP (MICROSEMI) |
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Produkt ist nicht verfügbar |
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APT50M65JFLL | MICROCHIP (MICROSEMI) |
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Produkt ist nicht verfügbar |
APT5024BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Case: TO247-3
Mounting: THT
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 0.21µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Case: TO247-3
Mounting: THT
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 0.21µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
Produkt ist nicht verfügbar
APT5024BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Case: TO247-3
Mounting: THT
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 0.21µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Case: TO247-3
Mounting: THT
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 0.21µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT5024SLLG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK
Case: D3PAK
Mounting: SMD
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK
Case: D3PAK
Mounting: SMD
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
Produkt ist nicht verfügbar
APT5024SLLG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK
Case: D3PAK
Mounting: SMD
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 22A; Idm: 88A; 265W; D3PAK
Case: D3PAK
Mounting: SMD
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 265W
Polarisation: unipolar
Gate charge: 43nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT5024SVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Case: D3PAK
Mounting: SMD
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 0.21µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Case: D3PAK
Mounting: SMD
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 0.21µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
Produkt ist nicht verfügbar
APT5024SVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Case: D3PAK
Mounting: SMD
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 0.21µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A
Case: D3PAK
Mounting: SMD
On-state resistance: 0.24Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 0.21µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 88A
Drain-source voltage: 500V
Drain current: 22A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT5028BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 20A; Idm: 80A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 175nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 20A; Idm: 80A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 175nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT5028BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 20A; Idm: 80A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 175nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 20A; Idm: 80A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 250W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 175nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50DF170HJ |
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Hersteller: MICROCHIP (MICROSEMI)
APT50DF170HJ Sing. ph. diode bridge rectif. - others
APT50DF170HJ Sing. ph. diode bridge rectif. - others
Produkt ist nicht verfügbar
APT50GF120B2RG |
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Hersteller: MICROCHIP (MICROSEMI)
APT50GF120B2RG THT IGBT transistors
APT50GF120B2RG THT IGBT transistors
Produkt ist nicht verfügbar
APT50GF120JRD |
Hersteller: MICROCHIP (MICROSEMI)
APT50GF120JRD IGBT modules
APT50GF120JRD IGBT modules
Produkt ist nicht verfügbar
APT50GF120JRDQ3 |
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Hersteller: MICROCHIP (MICROSEMI)
APT50GF120JRDQ3 IGBT modules
APT50GF120JRDQ3 IGBT modules
Produkt ist nicht verfügbar
APT50GF120LRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 75A; 781W; TO264
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 781W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 68ns
Turn-off time: 395ns
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 75A; 781W; TO264
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 781W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 68ns
Turn-off time: 395ns
Produkt ist nicht verfügbar
APT50GF120LRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 75A; 781W; TO264
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 781W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 68ns
Turn-off time: 395ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 75A; 781W; TO264
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 781W
Case: TO264
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 68ns
Turn-off time: 395ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50GLQ65JU2 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Technology: Field Stop; Trench
Collector current: 50A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Application: motors
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Technology: Field Stop; Trench
Collector current: 50A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Application: motors
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
APT50GLQ65JU2 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Technology: Field Stop; Trench
Collector current: 50A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Application: motors
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Technology: Field Stop; Trench
Collector current: 50A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 140A
Semiconductor structure: diode/transistor
Max. off-state voltage: 650V
Application: motors
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50GN120B2G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 1.2kV
Collector current: 66A
Power dissipation: 543W
Case: T-Max
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 0.6µs
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 1.2kV
Collector current: 66A
Power dissipation: 543W
Case: T-Max
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 0.6µs
Produkt ist nicht verfügbar
APT50GN120B2G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 1.2kV
Collector current: 66A
Power dissipation: 543W
Case: T-Max
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 0.6µs
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 1.2kV; 66A; 543W; T-Max
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 1.2kV
Collector current: 66A
Power dissipation: 543W
Case: T-Max
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 315nC
Kind of package: tube
Turn-on time: 55ns
Turn-off time: 0.6µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50GN120L2DQ2G |
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Hersteller: MICROCHIP (MICROSEMI)
APT50GN120L2DQ2G THT IGBT transistors
APT50GN120L2DQ2G THT IGBT transistors
Produkt ist nicht verfügbar
APT50GN60BDQ2G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
Produkt ist nicht verfügbar
APT50GN60BDQ2G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 64A
Power dissipation: 366W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 325nC
Kind of package: tube
Turn-on time: 45ns
Turn-off time: 0.4µs
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50GN60BDQ3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector current: 64A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Turn-on time: 45ns
Turn-off time: 0.4µs
Collector-emitter voltage: 600V
Power dissipation: 366W
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 325nC
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector current: 64A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Turn-on time: 45ns
Turn-off time: 0.4µs
Collector-emitter voltage: 600V
Power dissipation: 366W
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 325nC
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 71.5 EUR |
APT50GN60BDQ3G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector current: 64A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Turn-on time: 45ns
Turn-off time: 0.4µs
Collector-emitter voltage: 600V
Power dissipation: 366W
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 325nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector current: 64A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Turn-on time: 45ns
Turn-off time: 0.4µs
Collector-emitter voltage: 600V
Power dissipation: 366W
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 325nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 71.5 EUR |
3+ | 23.84 EUR |
10+ | 17.57 EUR |
APT50GN60BG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector current: 64A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Turn-on time: 45ns
Turn-off time: 0.4µs
Collector-emitter voltage: 600V
Power dissipation: 366W
Kind of package: tube
Gate charge: 325nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector current: 64A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Turn-on time: 45ns
Turn-off time: 0.4µs
Collector-emitter voltage: 600V
Power dissipation: 366W
Kind of package: tube
Gate charge: 325nC
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 71.5 EUR |
APT50GN60BG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector current: 64A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Turn-on time: 45ns
Turn-off time: 0.4µs
Collector-emitter voltage: 600V
Power dissipation: 366W
Kind of package: tube
Gate charge: 325nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 64A; 366W; TO247-3
Type of transistor: IGBT
Collector current: 64A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Turn-on time: 45ns
Turn-off time: 0.4µs
Collector-emitter voltage: 600V
Power dissipation: 366W
Kind of package: tube
Gate charge: 325nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 71.5 EUR |
3+ | 23.84 EUR |
5+ | 14.3 EUR |
10+ | 9.08 EUR |
30+ | 9.04 EUR |
APT50GP60B2DQ2G |
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Hersteller: MICROCHIP (MICROSEMI)
APT50GP60B2DQ2G THT IGBT transistors
APT50GP60B2DQ2G THT IGBT transistors
Produkt ist nicht verfügbar
APT50GP60BG |
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Hersteller: MICROCHIP (MICROSEMI)
APT50GP60BG THT IGBT transistors
APT50GP60BG THT IGBT transistors
Produkt ist nicht verfügbar
APT50GP60J |
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Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
APT50GP60J |
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Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50GP60JDQ2 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
APT50GP60JDQ2 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 46A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 46A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50GR120B2 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max
Mounting: THT
Power dissipation: 694W
Kind of package: tube
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 66ns
Turn-off time: 324ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max
Mounting: THT
Power dissipation: 694W
Kind of package: tube
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 66ns
Turn-off time: 324ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
APT50GR120B2 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max
Mounting: THT
Power dissipation: 694W
Kind of package: tube
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 66ns
Turn-off time: 324ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; T-Max
Mounting: THT
Power dissipation: 694W
Kind of package: tube
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 66ns
Turn-off time: 324ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50GR120JD30 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Collector current: 50A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Collector current: 50A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
APT50GR120JD30 |
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Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Collector current: 50A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 50A; SOT227B
Technology: NPT; NPT Ultra Fast IGBT; POWER MOS 8®
Collector current: 50A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50GR120L |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264
Mounting: THT
Power dissipation: 694W
Kind of package: tube
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 66ns
Turn-off time: 324ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264
Mounting: THT
Power dissipation: 694W
Kind of package: tube
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 66ns
Turn-off time: 324ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
APT50GR120L |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264
Mounting: THT
Power dissipation: 694W
Kind of package: tube
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 66ns
Turn-off time: 324ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 694W; TO264
Mounting: THT
Power dissipation: 694W
Kind of package: tube
Gate charge: 330nC
Technology: NPT; POWER MOS 8®
Case: TO264
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 200A
Turn-on time: 66ns
Turn-off time: 324ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50GT120B2RDQ2G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 340nC
Technology: NPT
Case: T-Max
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 340nC
Technology: NPT
Case: T-Max
Produkt ist nicht verfügbar
APT50GT120B2RDQ2G |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 340nC
Technology: NPT
Case: T-Max
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 340nC
Technology: NPT
Case: T-Max
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50GT120B2RG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 340nC
Technology: NPT
Case: T-Max
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 340nC
Technology: NPT
Case: T-Max
Produkt ist nicht verfügbar
APT50GT120B2RG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 340nC
Technology: NPT
Case: T-Max
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 50A; 625W; T-Max
Mounting: THT
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 50A
Pulsed collector current: 150A
Turn-on time: 77ns
Turn-off time: 303ns
Type of transistor: IGBT
Power dissipation: 625W
Kind of package: tube
Gate charge: 340nC
Technology: NPT
Case: T-Max
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50GT120JU2 |
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Hersteller: MICROCHIP (MICROSEMI)
APT50GT120JU2 IGBT modules
APT50GT120JU2 IGBT modules
Produkt ist nicht verfügbar
APT50GT120JU3 |
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Hersteller: MICROCHIP (MICROSEMI)
APT50GT120JU3 IGBT modules
APT50GT120JU3 IGBT modules
Produkt ist nicht verfügbar
APT50GT120LRDQ2G |
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Hersteller: MICROCHIP (MICROSEMI)
APT50GT120LRDQ2G THT IGBT transistors
APT50GT120LRDQ2G THT IGBT transistors
Produkt ist nicht verfügbar
APT50GT120LRG |
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Hersteller: MICROCHIP (MICROSEMI)
APT50GT120LRG THT IGBT transistors
APT50GT120LRG THT IGBT transistors
Produkt ist nicht verfügbar
APT50M38JFLL |
Hersteller: MICROCHIP (MICROSEMI)
APT50M38JFLL Transistor modules MOSFET
APT50M38JFLL Transistor modules MOSFET
Produkt ist nicht verfügbar
APT50M38JLL |
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Hersteller: MICROCHIP (MICROSEMI)
APT50M38JLL Transistor modules MOSFET
APT50M38JLL Transistor modules MOSFET
Produkt ist nicht verfügbar
APT50M50JFLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 71A
On-state resistance: 50mΩ
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 284A
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 71A
On-state resistance: 50mΩ
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 284A
Produkt ist nicht verfügbar
APT50M50JFLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 71A
On-state resistance: 50mΩ
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 284A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 71A
On-state resistance: 50mΩ
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 284A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50M50JLL |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 71A
On-state resistance: 50mΩ
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 284A
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 71A
On-state resistance: 50mΩ
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 284A
Produkt ist nicht verfügbar
APT50M50JLL |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 71A
On-state resistance: 50mΩ
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 284A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 71A; ISOTOP; screw; Idm: 284A; 595W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 71A
On-state resistance: 50mΩ
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 284A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50M50JVFR |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 77A
On-state resistance: 50mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 308A
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 77A
On-state resistance: 50mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 308A
Produkt ist nicht verfügbar
APT50M50JVFR |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 77A
On-state resistance: 50mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 308A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 77A
On-state resistance: 50mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 308A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50M50JVR |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 77A
On-state resistance: 50mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 308A
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 77A
On-state resistance: 50mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 308A
Produkt ist nicht verfügbar
APT50M50JVR |
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Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 77A
On-state resistance: 50mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 308A
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 77A; ISOTOP; screw; Idm: 308A; 700W
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 77A
On-state resistance: 50mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 308A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50M50L2LLG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 89A; Idm: 356A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Drain-source voltage: 500V
Drain current: 89A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 200nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 356A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 89A; Idm: 356A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Drain-source voltage: 500V
Drain current: 89A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 200nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 356A
Produkt ist nicht verfügbar
APT50M50L2LLG |
![]() |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 89A; Idm: 356A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Drain-source voltage: 500V
Drain current: 89A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 200nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 356A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 89A; Idm: 356A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Drain-source voltage: 500V
Drain current: 89A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 200nC
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 356A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT50M60L2VRG |
Hersteller: MICROCHIP (MICROSEMI)
APT50M60L2VRG THT N channel transistors
APT50M60L2VRG THT N channel transistors
Produkt ist nicht verfügbar
APT50M65B2FLLG |
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Hersteller: MICROCHIP (MICROSEMI)
APT50M65B2FLLG THT N channel transistors
APT50M65B2FLLG THT N channel transistors
Produkt ist nicht verfügbar
APT50M65JFLL |
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Hersteller: MICROCHIP (MICROSEMI)
APT50M65JFLL Transistor modules MOSFET
APT50M65JFLL Transistor modules MOSFET
Produkt ist nicht verfügbar