Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4177) > Seite 34 nach 70
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APT30DQ60BG | MICROCHIP (MICROSEMI) |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 30A; TO247-2; automotive industry Mounting: THT Application: automotive industry Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Case: TO247-2 Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 94 Stücke: Lieferzeit 7-14 Tag (e) |
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APT30DQ60BHBG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; TO247-3; automotive industry Mounting: THT Application: automotive industry Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Case: TO247-3 Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: double series |
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APT30DQ60BHBG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; TO247-3; automotive industry Mounting: THT Application: automotive industry Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Case: TO247-3 Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: double series Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT30DQ60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; TO220-2; 1.14÷1.4mm; FRED Mounting: THT Application: automotive industry Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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APT30DQ60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; TO220-2; 1.14÷1.4mm; FRED Mounting: THT Application: automotive industry Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT30DS60BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; TO247-2; FRED Mounting: THT Type of diode: rectifying Technology: FRED Case: TO247-2 Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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APT30DS60BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; TO247-2; FRED Mounting: THT Type of diode: rectifying Technology: FRED Case: TO247-2 Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT30F50B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; TO247-3 Mounting: THT Case: TO247-3 On-state resistance: 0.19Ω Pulsed drain current: 90A Drain-source voltage: 500V Drain current: 19A Type of transistor: N-MOSFET Power dissipation: 415W Polarisation: unipolar Gate charge: 115nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V |
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APT30F50B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; TO247-3 Mounting: THT Case: TO247-3 On-state resistance: 0.19Ω Pulsed drain current: 90A Drain-source voltage: 500V Drain current: 19A Type of transistor: N-MOSFET Power dissipation: 415W Polarisation: unipolar Gate charge: 115nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT30F50S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 19A Pulsed drain current: 90A Power dissipation: 415W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 115nC Kind of channel: enhanced |
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APT30F50S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 19A Pulsed drain current: 90A Power dissipation: 415W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 115nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT30F60J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W Mechanical mounting: screw Drain current: 19A On-state resistance: 0.15Ω Power dissipation: 355W Polarisation: unipolar Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 160A Semiconductor structure: single transistor Drain-source voltage: 600V |
Produkt ist nicht verfügbar |
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| APT30F60J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W Mechanical mounting: screw Drain current: 19A On-state resistance: 0.15Ω Power dissipation: 355W Polarisation: unipolar Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 160A Semiconductor structure: single transistor Drain-source voltage: 600V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT30GN60BDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 37A Power dissipation: 203W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 165nC Kind of package: tube Turn-on time: 16ns Turn-off time: 255ns Features of semiconductor devices: integrated anti-parallel diode |
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APT30GN60BDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 37A Power dissipation: 203W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 165nC Kind of package: tube Turn-on time: 16ns Turn-off time: 255ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT30GN60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 37A Power dissipation: 203W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 165nC Kind of package: tube Turn-on time: 26ns Turn-off time: 255ns |
Produkt ist nicht verfügbar |
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APT30GN60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 37A Power dissipation: 203W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 165nC Kind of package: tube Turn-on time: 26ns Turn-off time: 255ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT30GP60BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 49A; 463W; TO247-3 Type of transistor: IGBT Collector current: 49A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 120A Turn-on time: 31ns Turn-off time: 165ns Collector-emitter voltage: 600V Power dissipation: 463W Technology: POWER MOS 7®; PT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 90nC |
auf Bestellung 32 Stücke: Lieferzeit 14-21 Tag (e) |
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APT30GP60BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 49A; 463W; TO247-3 Type of transistor: IGBT Collector current: 49A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±20V Pulsed collector current: 120A Turn-on time: 31ns Turn-off time: 165ns Collector-emitter voltage: 600V Power dissipation: 463W Technology: POWER MOS 7®; PT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 90nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 32 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT30GP60BG | MICROCHIP (MICROSEMI) |
APT30GP60BG THT IGBT transistors |
Produkt ist nicht verfügbar |
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APT30M19JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A Mechanical mounting: screw Drain current: 130A On-state resistance: 19mΩ Power dissipation: 700W Polarisation: unipolar Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS V® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 520A Semiconductor structure: single transistor Drain-source voltage: 300V |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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APT30M19JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A Mechanical mounting: screw Drain current: 130A On-state resistance: 19mΩ Power dissipation: 700W Polarisation: unipolar Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS V® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 520A Semiconductor structure: single transistor Drain-source voltage: 300V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT30M19JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A Mechanical mounting: screw Drain current: 130A On-state resistance: 19mΩ Power dissipation: 700W Polarisation: unipolar Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 520A Semiconductor structure: single transistor Drain-source voltage: 300V |
Produkt ist nicht verfügbar |
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| APT30M19JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A Mechanical mounting: screw Drain current: 130A On-state resistance: 19mΩ Power dissipation: 700W Polarisation: unipolar Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 520A Semiconductor structure: single transistor Drain-source voltage: 300V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT30M30JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 88A; ISOTOP; screw; Idm: 352A; 520W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 352A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 88A On-state resistance: 30mΩ Power dissipation: 520W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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| APT30M30JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 88A; ISOTOP; screw; Idm: 352A; 520W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 352A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 88A On-state resistance: 30mΩ Power dissipation: 520W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT30M36B2FLLG | MICROCHIP (MICROSEMI) |
APT30M36B2FLLG THT N channel transistors |
Produkt ist nicht verfügbar |
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| APT30M36B2LLG | MICROCHIP (MICROSEMI) | APT30M36B2LLG THT N channel transistors |
Produkt ist nicht verfügbar |
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| APT30M36JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W Mechanical mounting: screw Drain current: 76A On-state resistance: 36mΩ Power dissipation: 463W Polarisation: unipolar Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 304A Semiconductor structure: single transistor Drain-source voltage: 300V |
Produkt ist nicht verfügbar |
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| APT30M36JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W Mechanical mounting: screw Drain current: 76A On-state resistance: 36mΩ Power dissipation: 463W Polarisation: unipolar Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 304A Semiconductor structure: single transistor Drain-source voltage: 300V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT30M36JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W Mechanical mounting: screw Drain current: 76A On-state resistance: 36mΩ Power dissipation: 463W Polarisation: unipolar Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 304A Semiconductor structure: single transistor Drain-source voltage: 300V |
Produkt ist nicht verfügbar |
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| APT30M36JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W Mechanical mounting: screw Drain current: 76A On-state resistance: 36mΩ Power dissipation: 463W Polarisation: unipolar Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 304A Semiconductor structure: single transistor Drain-source voltage: 300V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT30M36LFLLG | MICROCHIP (MICROSEMI) | APT30M36LFLLG THT N channel transistors |
Produkt ist nicht verfügbar |
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APT30M36LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 84A; Idm: 336A; 568W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 300V Drain current: 84A Pulsed drain current: 336A Power dissipation: 568W Case: TO264 Gate-source voltage: ±30V On-state resistance: 36mΩ Mounting: THT Gate charge: 115nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT30M36LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 84A; Idm: 336A; 568W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 300V Drain current: 84A Pulsed drain current: 336A Power dissipation: 568W Case: TO264 Gate-source voltage: ±30V On-state resistance: 36mΩ Mounting: THT Gate charge: 115nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT30M40JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 280A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 70A On-state resistance: 40mΩ Power dissipation: 450W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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| APT30M40JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 280A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 70A On-state resistance: 40mΩ Power dissipation: 450W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT30M40JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 280A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 70A On-state resistance: 40mΩ Power dissipation: 450W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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| APT30M40JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 280A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 70A On-state resistance: 40mΩ Power dissipation: 450W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT30M60J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 160A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 19A On-state resistance: 0.15Ω Power dissipation: 355W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| APT30M60J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 160A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 19A On-state resistance: 0.15Ω Power dissipation: 355W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT30M61BFLLG | MICROCHIP (MICROSEMI) | APT30M61BFLLG THT N channel transistors |
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| APT30M61BLLG | MICROCHIP (MICROSEMI) | APT30M61BLLG THT N channel transistors |
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APT30M61SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK Mounting: SMD Drain current: 54A Kind of channel: enhanced Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: D3PAK On-state resistance: 61mΩ Power dissipation: 403W Gate charge: 64nC Polarisation: unipolar Technology: POWER MOS 7® |
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APT30M61SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK Mounting: SMD Drain current: 54A Kind of channel: enhanced Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: D3PAK On-state resistance: 61mΩ Power dissipation: 403W Gate charge: 64nC Polarisation: unipolar Technology: POWER MOS 7® Anzahl je Verpackung: 1 Stücke |
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| APT30M61SLLG | MICROCHIP (MICROSEMI) | APT30M61SLLG SMD N channel transistors |
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| APT30M70BVFRG | MICROCHIP (MICROSEMI) |
APT30M70BVFRG THT N channel transistors |
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| APT30M70BVRG | MICROCHIP (MICROSEMI) |
APT30M70BVRG THT N channel transistors |
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APT30M75BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 44A; Idm: 176A; 329W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 57nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 176A Drain-source voltage: 300V Drain current: 44A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 329W Polarisation: unipolar |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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APT30M75BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 44A; Idm: 176A; 329W; TO247-3 Mounting: THT Case: TO247-3 Technology: POWER MOS 7® Gate charge: 57nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 176A Drain-source voltage: 300V Drain current: 44A On-state resistance: 75mΩ Type of transistor: N-MOSFET Power dissipation: 329W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT30M75BLLG | MICROCHIP (MICROSEMI) | APT30M75BLLG THT N channel transistors |
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APT30M85BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A Mounting: THT Case: TO247-3 Technology: POWER MOS 5® Gate charge: 195nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 160A Drain-source voltage: 300V Drain current: 40A On-state resistance: 85mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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APT30M85BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A Mounting: THT Case: TO247-3 Technology: POWER MOS 5® Gate charge: 195nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 160A Drain-source voltage: 300V Drain current: 40A On-state resistance: 85mΩ Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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APT30N60BC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 89A Power dissipation: 219W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Gate charge: 88nC Kind of channel: enhanced |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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APT30N60BC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 89A Power dissipation: 219W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Gate charge: 88nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT30S20BCTG | MICROCHIP (MICROSEMI) |
APT30S20BCTG THT Schottky diodes |
auf Bestellung 38 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT30S20BG | MICROCHIP (MICROSEMI) |
APT30S20BG THT Schottky diodes |
Produkt ist nicht verfügbar |
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| APT31M100B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 20A Pulsed drain current: 120A Power dissipation: 1.04kW Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 260nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| APT31M100B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 20A Pulsed drain current: 120A Power dissipation: 1.04kW Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 260nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT31M100L | MICROCHIP (MICROSEMI) |
APT31M100L THT N channel transistors |
Produkt ist nicht verfügbar |
| APT30DQ60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-2; automotive industry
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-2; automotive industry
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 94 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.72 EUR |
| 22+ | 3.33 EUR |
| 28+ | 2.59 EUR |
| 30+ | 2.45 EUR |
| APT30DQ60BHBG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-3; automotive industry
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-3
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: double series
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-3; automotive industry
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-3
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: double series
Produkt ist nicht verfügbar
| APT30DQ60BHBG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-3; automotive industry
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-3
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: double series
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-3; automotive industry
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-3
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: double series
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30DQ60KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO220-2; 1.14÷1.4mm; FRED
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO220-2; 1.14÷1.4mm; FRED
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| APT30DQ60KG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO220-2; 1.14÷1.4mm; FRED
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO220-2; 1.14÷1.4mm; FRED
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30DS60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-2; FRED
Mounting: THT
Type of diode: rectifying
Technology: FRED
Case: TO247-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-2; FRED
Mounting: THT
Type of diode: rectifying
Technology: FRED
Case: TO247-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| APT30DS60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-2; FRED
Mounting: THT
Type of diode: rectifying
Technology: FRED
Case: TO247-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-2; FRED
Mounting: THT
Type of diode: rectifying
Technology: FRED
Case: TO247-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30F50B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; TO247-3
Mounting: THT
Case: TO247-3
On-state resistance: 0.19Ω
Pulsed drain current: 90A
Drain-source voltage: 500V
Drain current: 19A
Type of transistor: N-MOSFET
Power dissipation: 415W
Polarisation: unipolar
Gate charge: 115nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; TO247-3
Mounting: THT
Case: TO247-3
On-state resistance: 0.19Ω
Pulsed drain current: 90A
Drain-source voltage: 500V
Drain current: 19A
Type of transistor: N-MOSFET
Power dissipation: 415W
Polarisation: unipolar
Gate charge: 115nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| APT30F50B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; TO247-3
Mounting: THT
Case: TO247-3
On-state resistance: 0.19Ω
Pulsed drain current: 90A
Drain-source voltage: 500V
Drain current: 19A
Type of transistor: N-MOSFET
Power dissipation: 415W
Polarisation: unipolar
Gate charge: 115nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; TO247-3
Mounting: THT
Case: TO247-3
On-state resistance: 0.19Ω
Pulsed drain current: 90A
Drain-source voltage: 500V
Drain current: 19A
Type of transistor: N-MOSFET
Power dissipation: 415W
Polarisation: unipolar
Gate charge: 115nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30F50S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 19A
Pulsed drain current: 90A
Power dissipation: 415W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 115nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 19A
Pulsed drain current: 90A
Power dissipation: 415W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 115nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT30F50S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 19A
Pulsed drain current: 90A
Power dissipation: 415W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 115nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 19A
Pulsed drain current: 90A
Power dissipation: 415W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 115nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30F60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 160A
Semiconductor structure: single transistor
Drain-source voltage: 600V
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 160A
Semiconductor structure: single transistor
Drain-source voltage: 600V
Produkt ist nicht verfügbar
| APT30F60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 160A
Semiconductor structure: single transistor
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 160A
Semiconductor structure: single transistor
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30GN60BDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 203W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-on time: 16ns
Turn-off time: 255ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 203W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-on time: 16ns
Turn-off time: 255ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| APT30GN60BDQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 203W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-on time: 16ns
Turn-off time: 255ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 203W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-on time: 16ns
Turn-off time: 255ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30GN60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 203W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 255ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 203W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 255ns
Produkt ist nicht verfügbar
| APT30GN60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 203W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 255ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 203W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 255ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30GP60BDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 49A; 463W; TO247-3
Type of transistor: IGBT
Collector current: 49A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Turn-on time: 31ns
Turn-off time: 165ns
Collector-emitter voltage: 600V
Power dissipation: 463W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 90nC
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 49A; 463W; TO247-3
Type of transistor: IGBT
Collector current: 49A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Turn-on time: 31ns
Turn-off time: 165ns
Collector-emitter voltage: 600V
Power dissipation: 463W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 90nC
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 15.42 EUR |
| 6+ | 12.28 EUR |
| 10+ | 12.27 EUR |
| APT30GP60BDQ1G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 49A; 463W; TO247-3
Type of transistor: IGBT
Collector current: 49A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Turn-on time: 31ns
Turn-off time: 165ns
Collector-emitter voltage: 600V
Power dissipation: 463W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 90nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 49A; 463W; TO247-3
Type of transistor: IGBT
Collector current: 49A
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Turn-on time: 31ns
Turn-off time: 165ns
Collector-emitter voltage: 600V
Power dissipation: 463W
Technology: POWER MOS 7®; PT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 90nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 15.42 EUR |
| 6+ | 12.28 EUR |
| 10+ | 12.27 EUR |
| APT30GP60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT30GP60BG THT IGBT transistors
APT30GP60BG THT IGBT transistors
Produkt ist nicht verfügbar
| APT30M19JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 520A
Semiconductor structure: single transistor
Drain-source voltage: 300V
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 520A
Semiconductor structure: single transistor
Drain-source voltage: 300V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 97.51 EUR |
| APT30M19JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 520A
Semiconductor structure: single transistor
Drain-source voltage: 300V
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 520A
Semiconductor structure: single transistor
Drain-source voltage: 300V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 97.51 EUR |
| APT30M19JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 520A
Semiconductor structure: single transistor
Drain-source voltage: 300V
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 520A
Semiconductor structure: single transistor
Drain-source voltage: 300V
Produkt ist nicht verfügbar
| APT30M19JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 520A
Semiconductor structure: single transistor
Drain-source voltage: 300V
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 520A
Semiconductor structure: single transistor
Drain-source voltage: 300V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30M30JLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 88A; ISOTOP; screw; Idm: 352A; 520W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 352A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 88A
On-state resistance: 30mΩ
Power dissipation: 520W
Polarisation: unipolar
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 88A; ISOTOP; screw; Idm: 352A; 520W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 352A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 88A
On-state resistance: 30mΩ
Power dissipation: 520W
Polarisation: unipolar
Produkt ist nicht verfügbar
| APT30M30JLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 88A; ISOTOP; screw; Idm: 352A; 520W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 352A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 88A
On-state resistance: 30mΩ
Power dissipation: 520W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 88A; ISOTOP; screw; Idm: 352A; 520W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 352A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 88A
On-state resistance: 30mΩ
Power dissipation: 520W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30M36B2FLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT30M36B2FLLG THT N channel transistors
APT30M36B2FLLG THT N channel transistors
Produkt ist nicht verfügbar
| APT30M36B2LLG |
Hersteller: MICROCHIP (MICROSEMI)
APT30M36B2LLG THT N channel transistors
APT30M36B2LLG THT N channel transistors
Produkt ist nicht verfügbar
| APT30M36JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W
Mechanical mounting: screw
Drain current: 76A
On-state resistance: 36mΩ
Power dissipation: 463W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 304A
Semiconductor structure: single transistor
Drain-source voltage: 300V
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W
Mechanical mounting: screw
Drain current: 76A
On-state resistance: 36mΩ
Power dissipation: 463W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 304A
Semiconductor structure: single transistor
Drain-source voltage: 300V
Produkt ist nicht verfügbar
| APT30M36JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W
Mechanical mounting: screw
Drain current: 76A
On-state resistance: 36mΩ
Power dissipation: 463W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 304A
Semiconductor structure: single transistor
Drain-source voltage: 300V
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W
Mechanical mounting: screw
Drain current: 76A
On-state resistance: 36mΩ
Power dissipation: 463W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 304A
Semiconductor structure: single transistor
Drain-source voltage: 300V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30M36JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W
Mechanical mounting: screw
Drain current: 76A
On-state resistance: 36mΩ
Power dissipation: 463W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 304A
Semiconductor structure: single transistor
Drain-source voltage: 300V
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W
Mechanical mounting: screw
Drain current: 76A
On-state resistance: 36mΩ
Power dissipation: 463W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 304A
Semiconductor structure: single transistor
Drain-source voltage: 300V
Produkt ist nicht verfügbar
| APT30M36JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W
Mechanical mounting: screw
Drain current: 76A
On-state resistance: 36mΩ
Power dissipation: 463W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 304A
Semiconductor structure: single transistor
Drain-source voltage: 300V
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W
Mechanical mounting: screw
Drain current: 76A
On-state resistance: 36mΩ
Power dissipation: 463W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 304A
Semiconductor structure: single transistor
Drain-source voltage: 300V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30M36LFLLG |
Hersteller: MICROCHIP (MICROSEMI)
APT30M36LFLLG THT N channel transistors
APT30M36LFLLG THT N channel transistors
Produkt ist nicht verfügbar
| APT30M36LLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 84A; Idm: 336A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 84A
Pulsed drain current: 336A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 115nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 84A; Idm: 336A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 84A
Pulsed drain current: 336A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 115nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT30M36LLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 84A; Idm: 336A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 84A
Pulsed drain current: 336A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 115nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 84A; Idm: 336A; 568W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 84A
Pulsed drain current: 336A
Power dissipation: 568W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 115nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30M40JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Produkt ist nicht verfügbar
| APT30M40JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30M40JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Produkt ist nicht verfügbar
| APT30M40JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30M60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 160A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 160A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT30M60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 160A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 160A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30M61BFLLG |
Hersteller: MICROCHIP (MICROSEMI)
APT30M61BFLLG THT N channel transistors
APT30M61BFLLG THT N channel transistors
Produkt ist nicht verfügbar
| APT30M61BLLG |
Hersteller: MICROCHIP (MICROSEMI)
APT30M61BLLG THT N channel transistors
APT30M61BLLG THT N channel transistors
Produkt ist nicht verfügbar
| APT30M61SFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK
Mounting: SMD
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: D3PAK
On-state resistance: 61mΩ
Power dissipation: 403W
Gate charge: 64nC
Polarisation: unipolar
Technology: POWER MOS 7®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK
Mounting: SMD
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: D3PAK
On-state resistance: 61mΩ
Power dissipation: 403W
Gate charge: 64nC
Polarisation: unipolar
Technology: POWER MOS 7®
Produkt ist nicht verfügbar
| APT30M61SFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK
Mounting: SMD
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: D3PAK
On-state resistance: 61mΩ
Power dissipation: 403W
Gate charge: 64nC
Polarisation: unipolar
Technology: POWER MOS 7®
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK
Mounting: SMD
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: D3PAK
On-state resistance: 61mΩ
Power dissipation: 403W
Gate charge: 64nC
Polarisation: unipolar
Technology: POWER MOS 7®
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30M61SLLG |
Hersteller: MICROCHIP (MICROSEMI)
APT30M61SLLG SMD N channel transistors
APT30M61SLLG SMD N channel transistors
Produkt ist nicht verfügbar
| APT30M70BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT30M70BVFRG THT N channel transistors
APT30M70BVFRG THT N channel transistors
Produkt ist nicht verfügbar
| APT30M70BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT30M70BVRG THT N channel transistors
APT30M70BVRG THT N channel transistors
Produkt ist nicht verfügbar
| APT30M75BFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; Idm: 176A; 329W; TO247-3
Mounting: THT
Case: TO247-3
Technology: POWER MOS 7®
Gate charge: 57nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Drain-source voltage: 300V
Drain current: 44A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 329W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; Idm: 176A; 329W; TO247-3
Mounting: THT
Case: TO247-3
Technology: POWER MOS 7®
Gate charge: 57nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Drain-source voltage: 300V
Drain current: 44A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 329W
Polarisation: unipolar
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 16.46 EUR |
| 10+ | 16.16 EUR |
| APT30M75BFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; Idm: 176A; 329W; TO247-3
Mounting: THT
Case: TO247-3
Technology: POWER MOS 7®
Gate charge: 57nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Drain-source voltage: 300V
Drain current: 44A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 329W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 44A; Idm: 176A; 329W; TO247-3
Mounting: THT
Case: TO247-3
Technology: POWER MOS 7®
Gate charge: 57nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Drain-source voltage: 300V
Drain current: 44A
On-state resistance: 75mΩ
Type of transistor: N-MOSFET
Power dissipation: 329W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 16.46 EUR |
| 10+ | 16.16 EUR |
| APT30M75BLLG |
Hersteller: MICROCHIP (MICROSEMI)
APT30M75BLLG THT N channel transistors
APT30M75BLLG THT N channel transistors
Produkt ist nicht verfügbar
| APT30M85BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A
Mounting: THT
Case: TO247-3
Technology: POWER MOS 5®
Gate charge: 195nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 160A
Drain-source voltage: 300V
Drain current: 40A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A
Mounting: THT
Case: TO247-3
Technology: POWER MOS 5®
Gate charge: 195nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 160A
Drain-source voltage: 300V
Drain current: 40A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Produkt ist nicht verfügbar
| APT30M85BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A
Mounting: THT
Case: TO247-3
Technology: POWER MOS 5®
Gate charge: 195nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 160A
Drain-source voltage: 300V
Drain current: 40A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A
Mounting: THT
Case: TO247-3
Technology: POWER MOS 5®
Gate charge: 195nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 160A
Drain-source voltage: 300V
Drain current: 40A
On-state resistance: 85mΩ
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT30N60BC6 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 9.64 EUR |
| APT30N60BC6 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 9.64 EUR |
| APT30S20BCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT30S20BCTG THT Schottky diodes
APT30S20BCTG THT Schottky diodes
auf Bestellung 38 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 13.93 EUR |
| 8+ | 9.14 EUR |
| 9+ | 8.64 EUR |
| APT30S20BG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT30S20BG THT Schottky diodes
APT30S20BG THT Schottky diodes
Produkt ist nicht verfügbar
| APT31M100B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT31M100B2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT31M100L |
|
Hersteller: MICROCHIP (MICROSEMI)
APT31M100L THT N channel transistors
APT31M100L THT N channel transistors
Produkt ist nicht verfügbar