Technische Details APT31M100B2 Microsemi
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW, Type of transistor: N-MOSFET, Technology: POWER MOS 8®, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 20A, Pulsed drain current: 120A, Power dissipation: 1.04kW, Case: TO247MAX, Gate-source voltage: ±30V, On-state resistance: 0.38Ω, Mounting: THT, Gate charge: 260nC, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT31M100B2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| APT31M100B2 | Hersteller : MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 20A Pulsed drain current: 120A Power dissipation: 1.04kW Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 260nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT31M100B2 | Hersteller : Microsemi Power Products Group |
Description: MOSFET N-CH 1000V 32A T-MAX |
Produkt ist nicht verfügbar |
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| APT31M100B2 | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 20A Pulsed drain current: 120A Power dissipation: 1.04kW Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 260nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |