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APT31M100L Microchip Technology
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 29.3 EUR |
100+ | 25.34 EUR |
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Technische Details APT31M100L Microchip Technology
Description: MOSFET N-CH 1000V 32A TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 16A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-264, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V.
Weitere Produktangebote APT31M100L nach Preis ab 31.5 EUR bis 31.5 EUR
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APT31M100L | Hersteller : Microchip Technology |
![]() Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 16A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-264 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8500 pF @ 25 V |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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APT31M100L | Hersteller : MICROCHIP (MICROSEMI) |
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APT31M100L | Hersteller : Microchip Technology |
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Produkt ist nicht verfügbar |
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APT31M100L | Hersteller : Microchip / Microsemi |
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Produkt ist nicht verfügbar |