APT30GP60BG Microchip Technology
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 13.01 EUR |
| 100+ | 11.26 EUR |
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Technische Details APT30GP60BG Microchip Technology
Description: IGBT PT 600V 100A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A, Supplier Device Package: TO-247 [B], IGBT Type: PT, Td (on/off) @ 25°C: 13ns/55ns, Switching Energy: 260µJ (on), 250µJ (off), Test Condition: 400V, 30A, 5Ohm, 15V, Gate Charge: 90 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 463 W.
Weitere Produktangebote APT30GP60BG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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APT30GP60BG | Hersteller : Microchip Technology |
 Trans IGBT Chip N-CH 600V 100A 463W 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| APT30GP60BG | Hersteller : MICROCHIP (MICROSEMI) |
APT30GP60BG THT IGBT transistors |
Produkt ist nicht verfügbar |
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APT30GP60BG | Hersteller : Microchip Technology |
Description: IGBT PT 600V 100A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: TO-247 [B] IGBT Type: PT Td (on/off) @ 25°C: 13ns/55ns Switching Energy: 260µJ (on), 250µJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 90 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 100 A Power - Max: 463 W |
Produkt ist nicht verfügbar |