Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4177) > Seite 38 nach 70
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| APT5010B2VFRG | MICROCHIP (MICROSEMI) |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max Type of transistor: N-MOSFET Technology: FREDFET; POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Power dissipation: 520W Case: T-Max Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT5010B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| APT5010B2VRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT5010JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 41A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT5010JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 41A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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| APT5010JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 164A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 41A On-state resistance: 0.1Ω Power dissipation: 378W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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| APT5010JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W Mechanical mounting: screw Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 164A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 41A On-state resistance: 0.1Ω Power dissipation: 378W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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| APT5010JLLU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT5010JLLU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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| APT5010JLLU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT5010JLLU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 164A Power dissipation: 378W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Semiconductor structure: diode/transistor Electrical mounting: screw Topology: buck chopper Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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| APT5010JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
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| APT5010JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 44A Pulsed drain current: 176A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.1Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
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APT5010JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W Mechanical mounting: screw Drain current: 44A On-state resistance: 0.1Ω Power dissipation: 450W Polarisation: unipolar Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 176A Semiconductor structure: single transistor Drain-source voltage: 500V |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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APT5010JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W Mechanical mounting: screw Drain current: 44A On-state resistance: 0.1Ω Power dissipation: 450W Polarisation: unipolar Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 176A Semiconductor structure: single transistor Drain-source voltage: 500V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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APT5010JVRU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Mechanical mounting: screw Drain current: 33A On-state resistance: 0.1Ω Power dissipation: 450W Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 176A Semiconductor structure: diode/transistor Drain-source voltage: 500V |
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APT5010JVRU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Mechanical mounting: screw Drain current: 33A On-state resistance: 0.1Ω Power dissipation: 450W Case: ISOTOP Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Gate-source voltage: ±30V Topology: boost chopper Pulsed drain current: 176A Semiconductor structure: diode/transistor Drain-source voltage: 500V Anzahl je Verpackung: 1 Stücke |
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| APT5010JVRU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Type of module: MOSFET transistor Semiconductor structure: diode/transistor Topology: buck chopper Case: ISOTOP Electrical mounting: screw Power dissipation: 450W Technology: POWER MOS 5® Mechanical mounting: screw Pulsed drain current: 176A Drain-source voltage: 500V Drain current: 33A On-state resistance: 0.1Ω Gate-source voltage: ±30V |
Produkt ist nicht verfügbar |
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| APT5010JVRU3 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W Type of module: MOSFET transistor Semiconductor structure: diode/transistor Topology: buck chopper Case: ISOTOP Electrical mounting: screw Power dissipation: 450W Technology: POWER MOS 5® Mechanical mounting: screw Pulsed drain current: 176A Drain-source voltage: 500V Drain current: 33A On-state resistance: 0.1Ω Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
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APT5010LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
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APT5010LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT5010LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
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APT5010LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 46A Pulsed drain current: 184A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 95nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT5010LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced |
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APT5010LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 47A Pulsed drain current: 188A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 470nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT5010LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Mounting: THT Case: TO264 Technology: POWER MOS 5® Gate charge: 470nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 188A Drain-source voltage: 500V Drain current: 47A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar |
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APT5010LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A Mounting: THT Case: TO264 Technology: POWER MOS 5® Gate charge: 470nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 188A Drain-source voltage: 500V Drain current: 47A On-state resistance: 0.1Ω Type of transistor: N-MOSFET Power dissipation: 520W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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APT5014BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced |
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APT5014BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT5014BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced |
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APT5014BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT5014SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 72nC Kind of channel: enhanced |
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APT5014SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 35A Pulsed drain current: 140A Power dissipation: 403W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 72nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT5015BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced |
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APT5015BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT5015BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced |
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APT5015BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT5015SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 300nC Kind of channel: enhanced |
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APT5015SVFRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 32A Pulsed drain current: 128A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 300nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT5016BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 329W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced |
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APT5016BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 329W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT5016BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 329W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced |
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APT5016BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 329W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 72nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT5017BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced |
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APT5017BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 300nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT5017BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 370W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 370W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhanced |
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APT5017BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 370W; TO247 Type of transistor: N-MOSFET Technology: POWER MOS V® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 370W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: THT Gate charge: 300nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5017SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 300nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT5017SVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Pulsed drain current: 120A Power dissipation: 370W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 300nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5018BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 58nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT5018BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 58nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5018BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 58nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT5018BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 58nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5018SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 58nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT5018SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 58nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5018SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 58nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT5018SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 500V Drain current: 27A Pulsed drain current: 108A Power dissipation: 300W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 58nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5020BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247 Case: TO247 Mounting: THT On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 225nC Technology: FREDFET; POWER MOS V® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 500V Drain current: 26A |
Produkt ist nicht verfügbar |
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APT5020BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247 Case: TO247 Mounting: THT On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 225nC Technology: FREDFET; POWER MOS V® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 500V Drain current: 26A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5020BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247 Case: TO247 Mounting: THT On-state resistance: 0.2Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 225nC Technology: POWER MOS V® Kind of channel: enhanced Gate-source voltage: ±30V Drain-source voltage: 500V Drain current: 26A |
Produkt ist nicht verfügbar |
| APT5010B2VFRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Power dissipation: 520W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 47A; 520W; T-Max
Type of transistor: N-MOSFET
Technology: FREDFET; POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Power dissipation: 520W
Case: T-Max
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010B2VRG |
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Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5010B2VRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT5010JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 41A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 164A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 41A
On-state resistance: 0.1Ω
Power dissipation: 378W
Polarisation: unipolar
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 164A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 41A
On-state resistance: 0.1Ω
Power dissipation: 378W
Polarisation: unipolar
Produkt ist nicht verfügbar
| APT5010JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 164A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 41A
On-state resistance: 0.1Ω
Power dissipation: 378W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 41A; ISOTOP; screw; Idm: 164A; 378W
Mechanical mounting: screw
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 164A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 41A
On-state resistance: 0.1Ω
Power dissipation: 378W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010JLLU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT5010JLLU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010JLLU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT5010JLLU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 30A; ISOTOP; screw; Idm: 164A; 378W
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 164A
Power dissipation: 378W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: buck chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
| APT5010JVFR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Mechanical mounting: screw
Drain current: 44A
On-state resistance: 0.1Ω
Power dissipation: 450W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Semiconductor structure: single transistor
Drain-source voltage: 500V
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Mechanical mounting: screw
Drain current: 44A
On-state resistance: 0.1Ω
Power dissipation: 450W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Semiconductor structure: single transistor
Drain-source voltage: 500V
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 52.95 EUR |
| APT5010JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Mechanical mounting: screw
Drain current: 44A
On-state resistance: 0.1Ω
Power dissipation: 450W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Semiconductor structure: single transistor
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 44A; ISOTOP; screw; Idm: 176A; 450W
Mechanical mounting: screw
Drain current: 44A
On-state resistance: 0.1Ω
Power dissipation: 450W
Polarisation: unipolar
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 176A
Semiconductor structure: single transistor
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 52.95 EUR |
| APT5010JVRU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Mechanical mounting: screw
Drain current: 33A
On-state resistance: 0.1Ω
Power dissipation: 450W
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 176A
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Mechanical mounting: screw
Drain current: 33A
On-state resistance: 0.1Ω
Power dissipation: 450W
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 176A
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Produkt ist nicht verfügbar
| APT5010JVRU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Mechanical mounting: screw
Drain current: 33A
On-state resistance: 0.1Ω
Power dissipation: 450W
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 176A
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Mechanical mounting: screw
Drain current: 33A
On-state resistance: 0.1Ω
Power dissipation: 450W
Case: ISOTOP
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Gate-source voltage: ±30V
Topology: boost chopper
Pulsed drain current: 176A
Semiconductor structure: diode/transistor
Drain-source voltage: 500V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010JVRU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Topology: buck chopper
Case: ISOTOP
Electrical mounting: screw
Power dissipation: 450W
Technology: POWER MOS 5®
Mechanical mounting: screw
Pulsed drain current: 176A
Drain-source voltage: 500V
Drain current: 33A
On-state resistance: 0.1Ω
Gate-source voltage: ±30V
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Topology: buck chopper
Case: ISOTOP
Electrical mounting: screw
Power dissipation: 450W
Technology: POWER MOS 5®
Mechanical mounting: screw
Pulsed drain current: 176A
Drain-source voltage: 500V
Drain current: 33A
On-state resistance: 0.1Ω
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| APT5010JVRU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Topology: buck chopper
Case: ISOTOP
Electrical mounting: screw
Power dissipation: 450W
Technology: POWER MOS 5®
Mechanical mounting: screw
Pulsed drain current: 176A
Drain-source voltage: 500V
Drain current: 33A
On-state resistance: 0.1Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 500V; 33A; ISOTOP; screw; Idm: 176A; 450W
Type of module: MOSFET transistor
Semiconductor structure: diode/transistor
Topology: buck chopper
Case: ISOTOP
Electrical mounting: screw
Power dissipation: 450W
Technology: POWER MOS 5®
Mechanical mounting: screw
Pulsed drain current: 176A
Drain-source voltage: 500V
Drain current: 33A
On-state resistance: 0.1Ω
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5010LFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010LLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5010LLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 46A; Idm: 184A; 520W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010LVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5010LVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 47A
Pulsed drain current: 188A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 470nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5010LVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Mounting: THT
Case: TO264
Technology: POWER MOS 5®
Gate charge: 470nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 188A
Drain-source voltage: 500V
Drain current: 47A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Mounting: THT
Case: TO264
Technology: POWER MOS 5®
Gate charge: 470nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 188A
Drain-source voltage: 500V
Drain current: 47A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Produkt ist nicht verfügbar
| APT5010LVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Mounting: THT
Case: TO264
Technology: POWER MOS 5®
Gate charge: 470nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 188A
Drain-source voltage: 500V
Drain current: 47A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 47A; Idm: 188A
Mounting: THT
Case: TO264
Technology: POWER MOS 5®
Gate charge: 470nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 188A
Drain-source voltage: 500V
Drain current: 47A
On-state resistance: 0.1Ω
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5014BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5014BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5014BLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5014BLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5014SLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5014SLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 35A; Idm: 140A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 72nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5015BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5015BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5015BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5015BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5015SVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5015SVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 32A; Idm: 128A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 32A
Pulsed drain current: 128A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5016BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5016BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5016BLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5016BLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; Idm: 120A; 329W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 329W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 72nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5017BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5017BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5017BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 370W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 370W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 370W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 370W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5017BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 370W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 370W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 370W; TO247
Type of transistor: N-MOSFET
Technology: POWER MOS V®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 370W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 300nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5017SVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5017SVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 30A; Idm: 120A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 370W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 300nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5018BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5018BFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5018BLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5018BLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5018SFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5018SFLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5018SLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT5018SLLG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 27A; Idm: 108A; 300W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 27A
Pulsed drain current: 108A
Power dissipation: 300W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5020BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Case: TO247
Mounting: THT
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 225nC
Technology: FREDFET; POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Case: TO247
Mounting: THT
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 225nC
Technology: FREDFET; POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
Produkt ist nicht verfügbar
| APT5020BVFRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Case: TO247
Mounting: THT
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 225nC
Technology: FREDFET; POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Case: TO247
Mounting: THT
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 225nC
Technology: FREDFET; POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT5020BVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Case: TO247
Mounting: THT
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 225nC
Technology: POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247
Case: TO247
Mounting: THT
On-state resistance: 0.2Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 225nC
Technology: POWER MOS V®
Kind of channel: enhanced
Gate-source voltage: ±30V
Drain-source voltage: 500V
Drain current: 26A
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