Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (4177) > Seite 36 nach 70
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| APT38M50J | MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 357W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 175A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 24A On-state resistance: 0.1Ω Power dissipation: 357W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT38N60BC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 112A Power dissipation: 278W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Gate charge: 112nC Kind of channel: enhanced |
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APT38N60BC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 112A Power dissipation: 278W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: THT Gate charge: 112nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT39F60J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 210A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 26A On-state resistance: 0.11Ω Power dissipation: 480W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
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| APT39F60J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 210A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 26A On-state resistance: 0.11Ω Power dissipation: 480W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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| APT39M60J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 210A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 26A On-state resistance: 0.11Ω Power dissipation: 480W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
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| APT39M60J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 210A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 26A On-state resistance: 0.11Ω Power dissipation: 480W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
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APT4014BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 28A; Idm: 112A Polarisation: unipolar Mounting: THT Power dissipation: 300W Gate charge: 160nC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Case: TO247-3 Drain-source voltage: 400V Drain current: 28A On-state resistance: 0.14Ω Type of transistor: N-MOSFET |
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APT4014BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 28A; Idm: 112A Polarisation: unipolar Mounting: THT Power dissipation: 300W Gate charge: 160nC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Case: TO247-3 Drain-source voltage: 400V Drain current: 28A On-state resistance: 0.14Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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APT4020BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 23A; Idm: 92A Mounting: THT Case: TO247-3 On-state resistance: 0.2Ω Pulsed drain current: 92A Drain-source voltage: 400V Drain current: 23A Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Gate charge: 0.12µC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V |
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APT4020BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 23A; Idm: 92A Mounting: THT Case: TO247-3 On-state resistance: 0.2Ω Pulsed drain current: 92A Drain-source voltage: 400V Drain current: 23A Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Gate charge: 0.12µC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Anzahl je Verpackung: 1 Stücke |
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APT40DQ100BCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 40A; TO247-3; automotive industry Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 1kV Load current: 40A Semiconductor structure: common cathode; double Case: TO247-3 Application: automotive industry |
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APT40DQ100BCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 40A; TO247-3; automotive industry Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 1kV Load current: 40A Semiconductor structure: common cathode; double Case: TO247-3 Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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APT40DQ100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 40A; TO247-2; automotive industry Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 1kV Load current: 40A Semiconductor structure: single diode Case: TO247-2 Application: automotive industry |
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APT40DQ100BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 40A; TO247-2; automotive industry Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 1kV Load current: 40A Semiconductor structure: single diode Case: TO247-2 Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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APT40DQ120BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 40A; TO247-2; automotive industry Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 1.2kV Load current: 40A Semiconductor structure: single diode Case: TO247-2 Application: automotive industry |
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APT40DQ120BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 40A; TO247-2; automotive industry Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 1.2kV Load current: 40A Semiconductor structure: single diode Case: TO247-2 Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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APT40DQ120SG | MICROCHIP (MICROSEMI) |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 40A; D3PAK; FRED Type of diode: rectifying Technology: FRED Mounting: SMD Max. off-state voltage: 1.2kV Load current: 40A Semiconductor structure: single diode Case: D3PAK Application: automotive industry |
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APT40DQ120SG | MICROCHIP (MICROSEMI) |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 40A; D3PAK; FRED Type of diode: rectifying Technology: FRED Mounting: SMD Max. off-state voltage: 1.2kV Load current: 40A Semiconductor structure: single diode Case: D3PAK Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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APT40DQ60BCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 40A; TO247-3; automotive industry Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 0.6kV Load current: 40A Semiconductor structure: common cathode; double Case: TO247-3 Application: automotive industry |
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APT40DQ60BCTG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 40A; TO247-3; automotive industry Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 0.6kV Load current: 40A Semiconductor structure: common cathode; double Case: TO247-3 Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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APT40DQ60BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 40A; TO247-2; automotive industry Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 0.6kV Load current: 40A Semiconductor structure: single diode Case: TO247-2 Application: automotive industry |
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APT40DQ60BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 40A; TO247-2; automotive industry Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 0.6kV Load current: 40A Semiconductor structure: single diode Case: TO247-2 Application: automotive industry Anzahl je Verpackung: 1 Stücke |
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| APT40DR160HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A Leads: M4 screws Max. off-state voltage: 1.6kV Max. forward voltage: 1.3V Load current: 40A Max. forward impulse current: 0.4kA Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: single-phase Case: SOT227B |
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| APT40DR160HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A Leads: M4 screws Max. off-state voltage: 1.6kV Max. forward voltage: 1.3V Load current: 40A Max. forward impulse current: 0.4kA Kind of package: tube Electrical mounting: screw Mechanical mounting: screw Version: module Type of bridge rectifier: single-phase Case: SOT227B Anzahl je Verpackung: 1 Stücke |
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| APT40GF120JRD | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 42A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 150A Technology: NPT Mechanical mounting: screw |
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| APT40GF120JRD | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 42A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 150A Technology: NPT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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| APT40GF120JRDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 42A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 150A Technology: Fast IGBT; FRED; NPT Mechanical mounting: screw |
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| APT40GF120JRDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 42A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 150A Technology: Fast IGBT; FRED; NPT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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| APT40GL120JU2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Technology: Field Stop; Trench Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Case: SOT227B Application: motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: boost chopper Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 70A |
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| APT40GL120JU2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Technology: Field Stop; Trench Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Case: SOT227B Application: motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: boost chopper Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 70A Anzahl je Verpackung: 1 Stücke |
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| APT40GL120JU3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A Technology: Field Stop; Trench Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Case: SOT227B Application: motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: buck chopper Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 70A |
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| APT40GL120JU3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A Technology: Field Stop; Trench Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Case: SOT227B Application: motors Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Topology: buck chopper Gate-emitter voltage: ±20V Collector current: 40A Pulsed collector current: 70A Anzahl je Verpackung: 1 Stücke |
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| APT40GLQ120JCU2 | MICROCHIP (MICROSEMI) |
APT40GLQ120JCU2 IGBT modules |
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APT40GP60B2DQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 62A; 543W; T-Max Mounting: THT Case: T-Max Gate charge: 135nC Collector-emitter voltage: 600V Collector current: 62A Gate-emitter voltage: ±20V Pulsed collector current: 160A Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 7®; PT Turn-on time: 49ns Turn-off time: 160ns Power dissipation: 543W Type of transistor: IGBT |
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APT40GP60B2DQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 62A; 543W; T-Max Mounting: THT Case: T-Max Gate charge: 135nC Collector-emitter voltage: 600V Collector current: 62A Gate-emitter voltage: ±20V Pulsed collector current: 160A Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Technology: POWER MOS 7®; PT Turn-on time: 49ns Turn-off time: 160ns Power dissipation: 543W Type of transistor: IGBT |
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| APT40GP60BG | MICROCHIP (MICROSEMI) |
APT40GP60BG THT IGBT transistors |
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| APT40GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B Technology: POWER MOS 7®; PT Collector current: 40A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 160A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| APT40GP60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B Technology: POWER MOS 7®; PT Collector current: 40A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 160A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
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| APT40GP60JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B Technology: POWER MOS 7®; PT Collector current: 40A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 160A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT |
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| APT40GP60JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B Technology: POWER MOS 7®; PT Collector current: 40A Case: SOT227B Gate-emitter voltage: ±30V Pulsed collector current: 160A Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Anzahl je Verpackung: 1 Stücke |
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| APT40GP90B2DQ2G | MICROCHIP (MICROSEMI) |
APT40GP90B2DQ2G THT IGBT transistors |
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| APT40GP90BG | MICROCHIP (MICROSEMI) |
APT40GP90BG THT IGBT transistors |
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| APT40GP90J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 32A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 900V Collector current: 32A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 160A Technology: POWER MOS 7®; PT Mechanical mounting: screw |
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| APT40GP90J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 32A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 900V Collector current: 32A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 160A Technology: POWER MOS 7®; PT Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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APT40GP90JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 27A; SOT227B; 284W Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 900V Collector current: 27A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 160A Power dissipation: 284W Technology: POWER MOS 7® Mechanical mounting: screw |
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APT40GP90JDQ2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 27A; SOT227B; 284W Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 900V Collector current: 27A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 160A Power dissipation: 284W Technology: POWER MOS 7® Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
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APT40GR120B | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; TO247-3 Mounting: THT Power dissipation: 500W Kind of package: tube Gate charge: 0.21µC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 160A Turn-on time: 47ns Turn-off time: 232ns Type of transistor: IGBT |
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APT40GR120B | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; TO247-3 Mounting: THT Power dissipation: 500W Kind of package: tube Gate charge: 0.21µC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Case: TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 160A Turn-on time: 47ns Turn-off time: 232ns Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
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APT40GR120B2D30 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max Mounting: THT Power dissipation: 500W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Case: T-Max Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 160A Turn-on time: 47ns Turn-off time: 232ns Type of transistor: IGBT |
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APT40GR120B2D30 | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max Mounting: THT Power dissipation: 500W Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Technology: NPT; POWER MOS 8® Part status: Not recommended for new designs Case: T-Max Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±30V Collector current: 40A Pulsed collector current: 160A Turn-on time: 47ns Turn-off time: 232ns Type of transistor: IGBT Anzahl je Verpackung: 1 Stücke |
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APT40GR120S | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1200V; 40A; 500W; D3PAK Kind of package: tube Power dissipation: 500W Gate charge: 0.21µC Technology: NPT Ultra Fast IGBT Type of transistor: IGBT Turn-off time: 232ns Turn-on time: 47ns Part status: Not recommended for new designs Pulsed collector current: 160A Collector current: 40A Gate-emitter voltage: ±30V Collector-emitter voltage: 1.2kV Case: D3PAK Mounting: SMD |
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APT40GR120S | MICROCHIP (MICROSEMI) |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1200V; 40A; 500W; D3PAK Kind of package: tube Power dissipation: 500W Gate charge: 0.21µC Technology: NPT Ultra Fast IGBT Type of transistor: IGBT Turn-off time: 232ns Turn-on time: 47ns Part status: Not recommended for new designs Pulsed collector current: 160A Collector current: 40A Gate-emitter voltage: ±30V Collector-emitter voltage: 1.2kV Case: D3PAK Mounting: SMD Anzahl je Verpackung: 1 Stücke |
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| APT40M35JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 400V; 93A; ISOTOP; screw; 700W; Ugs: ±30V Mechanical mounting: screw Gate-source voltage: ±30V Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 400V Drain current: 93A On-state resistance: 35mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced |
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| APT40M35JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 400V; 93A; ISOTOP; screw; 700W; Ugs: ±30V Mechanical mounting: screw Gate-source voltage: ±30V Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 400V Drain current: 93A On-state resistance: 35mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT40M70JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 400V; 53A; ISOTOP; screw; 450W; Ugs: ±30V Mechanical mounting: screw Gate-source voltage: ±30V Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 400V Drain current: 53A On-state resistance: 70mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| APT40M70JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 400V; 53A; ISOTOP; screw; 450W; Ugs: ±30V Mechanical mounting: screw Gate-source voltage: ±30V Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 400V Drain current: 53A On-state resistance: 70mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT40M70LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 57A; 520W Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 400V Drain current: 57A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 495nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT40M70LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 57A; 520W Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 400V Drain current: 57A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 70mΩ Mounting: THT Gate charge: 495nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT40N60JCU2 | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W Technology: CoolMOS™ Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 120A Power dissipation: 290W Case: ISOTOP Gate-source voltage: ±20V On-state resistance: 70mΩ Semiconductor structure: diode/transistor Electrical mounting: screw Topology: boost chopper Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
| APT38M50J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 357W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 175A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 357W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 24A; ISOTOP; screw; Idm: 175A; 357W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 175A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 24A
On-state resistance: 0.1Ω
Power dissipation: 357W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT38N60BC6 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT38N60BC6 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; Idm: 112A; 278W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 278W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 112nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT39F60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 210A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 26A
On-state resistance: 0.11Ω
Power dissipation: 480W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 210A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 26A
On-state resistance: 0.11Ω
Power dissipation: 480W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT39F60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 210A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 26A
On-state resistance: 0.11Ω
Power dissipation: 480W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 210A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 26A
On-state resistance: 0.11Ω
Power dissipation: 480W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT39M60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 210A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 26A
On-state resistance: 0.11Ω
Power dissipation: 480W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 210A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 26A
On-state resistance: 0.11Ω
Power dissipation: 480W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT39M60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 210A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 26A
On-state resistance: 0.11Ω
Power dissipation: 480W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 26A; ISOTOP; screw; Idm: 210A; 480W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 210A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 26A
On-state resistance: 0.11Ω
Power dissipation: 480W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT4014BVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 28A; Idm: 112A
Polarisation: unipolar
Mounting: THT
Power dissipation: 300W
Gate charge: 160nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Case: TO247-3
Drain-source voltage: 400V
Drain current: 28A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 28A; Idm: 112A
Polarisation: unipolar
Mounting: THT
Power dissipation: 300W
Gate charge: 160nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Case: TO247-3
Drain-source voltage: 400V
Drain current: 28A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| APT4014BVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 28A; Idm: 112A
Polarisation: unipolar
Mounting: THT
Power dissipation: 300W
Gate charge: 160nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Case: TO247-3
Drain-source voltage: 400V
Drain current: 28A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 28A; Idm: 112A
Polarisation: unipolar
Mounting: THT
Power dissipation: 300W
Gate charge: 160nC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Case: TO247-3
Drain-source voltage: 400V
Drain current: 28A
On-state resistance: 0.14Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT4020BVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 23A; Idm: 92A
Mounting: THT
Case: TO247-3
On-state resistance: 0.2Ω
Pulsed drain current: 92A
Drain-source voltage: 400V
Drain current: 23A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 0.12µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 23A; Idm: 92A
Mounting: THT
Case: TO247-3
On-state resistance: 0.2Ω
Pulsed drain current: 92A
Drain-source voltage: 400V
Drain current: 23A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 0.12µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
| APT4020BVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 23A; Idm: 92A
Mounting: THT
Case: TO247-3
On-state resistance: 0.2Ω
Pulsed drain current: 92A
Drain-source voltage: 400V
Drain current: 23A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 0.12µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 23A; Idm: 92A
Mounting: THT
Case: TO247-3
On-state resistance: 0.2Ω
Pulsed drain current: 92A
Drain-source voltage: 400V
Drain current: 23A
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Gate charge: 0.12µC
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40DQ100BCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 40A; TO247-3; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1kV
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 40A; TO247-3; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1kV
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Application: automotive industry
Produkt ist nicht verfügbar
| APT40DQ100BCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 40A; TO247-3; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1kV
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 40A; TO247-3; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1kV
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40DQ100BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 40A; TO247-2; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 40A; TO247-2; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Application: automotive industry
Produkt ist nicht verfügbar
| APT40DQ100BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 40A; TO247-2; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 40A; TO247-2; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40DQ120BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 40A; TO247-2; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 40A; TO247-2; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Application: automotive industry
Produkt ist nicht verfügbar
| APT40DQ120BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 40A; TO247-2; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 40A; TO247-2; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40DQ120SG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 40A; D3PAK; FRED
Type of diode: rectifying
Technology: FRED
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: D3PAK
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 40A; D3PAK; FRED
Type of diode: rectifying
Technology: FRED
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: D3PAK
Application: automotive industry
Produkt ist nicht verfügbar
| APT40DQ120SG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 40A; D3PAK; FRED
Type of diode: rectifying
Technology: FRED
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: D3PAK
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 40A; D3PAK; FRED
Type of diode: rectifying
Technology: FRED
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: D3PAK
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40DQ60BCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 40A; TO247-3; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 40A; TO247-3; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Application: automotive industry
Produkt ist nicht verfügbar
| APT40DQ60BCTG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 40A; TO247-3; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 40A; TO247-3; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 40A
Semiconductor structure: common cathode; double
Case: TO247-3
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40DQ60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 40A; TO247-2; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 40A; TO247-2; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Application: automotive industry
Produkt ist nicht verfügbar
| APT40DQ60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 40A; TO247-2; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 40A; TO247-2; automotive industry
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40DR160HJ |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A
Leads: M4 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 40A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Case: SOT227B
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A
Leads: M4 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 40A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Case: SOT227B
Produkt ist nicht verfügbar
| APT40DR160HJ |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A
Leads: M4 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 40A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Case: SOT227B
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 40A; Ifsm: 400A
Leads: M4 screws
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Load current: 40A
Max. forward impulse current: 0.4kA
Kind of package: tube
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Type of bridge rectifier: single-phase
Case: SOT227B
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40GF120JRD |
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 42A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Technology: NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 42A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Technology: NPT
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT40GF120JRD |
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 42A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Technology: NPT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 42A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Technology: NPT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40GF120JRDQ2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 42A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Technology: Fast IGBT; FRED; NPT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 42A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Technology: Fast IGBT; FRED; NPT
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT40GF120JRDQ2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 42A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Technology: Fast IGBT; FRED; NPT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 42A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 42A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Technology: Fast IGBT; FRED; NPT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40GL120JU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Technology: Field Stop; Trench
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SOT227B
Application: motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 70A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Technology: Field Stop; Trench
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SOT227B
Application: motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 70A
Produkt ist nicht verfügbar
| APT40GL120JU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Technology: Field Stop; Trench
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SOT227B
Application: motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 70A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Technology: Field Stop; Trench
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SOT227B
Application: motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 70A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40GL120JU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Technology: Field Stop; Trench
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SOT227B
Application: motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: buck chopper
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 70A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Technology: Field Stop; Trench
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SOT227B
Application: motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: buck chopper
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 70A
Produkt ist nicht verfügbar
| APT40GL120JU3 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Technology: Field Stop; Trench
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SOT227B
Application: motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: buck chopper
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 70A
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 40A
Technology: Field Stop; Trench
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Case: SOT227B
Application: motors
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Topology: buck chopper
Gate-emitter voltage: ±20V
Collector current: 40A
Pulsed collector current: 70A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40GLQ120JCU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
APT40GLQ120JCU2 IGBT modules
APT40GLQ120JCU2 IGBT modules
Produkt ist nicht verfügbar
| APT40GP60B2DQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 62A; 543W; T-Max
Mounting: THT
Case: T-Max
Gate charge: 135nC
Collector-emitter voltage: 600V
Collector current: 62A
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 7®; PT
Turn-on time: 49ns
Turn-off time: 160ns
Power dissipation: 543W
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 62A; 543W; T-Max
Mounting: THT
Case: T-Max
Gate charge: 135nC
Collector-emitter voltage: 600V
Collector current: 62A
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 7®; PT
Turn-on time: 49ns
Turn-off time: 160ns
Power dissipation: 543W
Type of transistor: IGBT
Produkt ist nicht verfügbar
| APT40GP60B2DQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 62A; 543W; T-Max
Mounting: THT
Case: T-Max
Gate charge: 135nC
Collector-emitter voltage: 600V
Collector current: 62A
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 7®; PT
Turn-on time: 49ns
Turn-off time: 160ns
Power dissipation: 543W
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 62A; 543W; T-Max
Mounting: THT
Case: T-Max
Gate charge: 135nC
Collector-emitter voltage: 600V
Collector current: 62A
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: POWER MOS 7®; PT
Turn-on time: 49ns
Turn-off time: 160ns
Power dissipation: 543W
Type of transistor: IGBT
Produkt ist nicht verfügbar
| APT40GP60BG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT40GP60BG THT IGBT transistors
APT40GP60BG THT IGBT transistors
Produkt ist nicht verfügbar
| APT40GP60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
| APT40GP60J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40GP60JDQ2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Produkt ist nicht verfügbar
| APT40GP60JDQ2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 40A; SOT227B
Technology: POWER MOS 7®; PT
Collector current: 40A
Case: SOT227B
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40GP90B2DQ2G |
|
Hersteller: MICROCHIP (MICROSEMI)
APT40GP90B2DQ2G THT IGBT transistors
APT40GP90B2DQ2G THT IGBT transistors
Produkt ist nicht verfügbar
| APT40GP90BG |
|
Hersteller: MICROCHIP (MICROSEMI)
APT40GP90BG THT IGBT transistors
APT40GP90BG THT IGBT transistors
Produkt ist nicht verfügbar
| APT40GP90J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 32A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 32A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 32A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 32A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT40GP90J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 32A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 32A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 32A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 32A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Technology: POWER MOS 7®; PT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40GP90JDQ2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 27A; SOT227B; 284W
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 27A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Power dissipation: 284W
Technology: POWER MOS 7®
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 27A; SOT227B; 284W
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 27A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Power dissipation: 284W
Technology: POWER MOS 7®
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT40GP90JDQ2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 27A; SOT227B; 284W
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 27A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Power dissipation: 284W
Technology: POWER MOS 7®
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 27A; SOT227B; 284W
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 900V
Collector current: 27A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 160A
Power dissipation: 284W
Technology: POWER MOS 7®
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40GR120B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; TO247-3
Mounting: THT
Power dissipation: 500W
Kind of package: tube
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; TO247-3
Mounting: THT
Power dissipation: 500W
Kind of package: tube
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
| APT40GR120B |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; TO247-3
Mounting: THT
Power dissipation: 500W
Kind of package: tube
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; TO247-3
Mounting: THT
Power dissipation: 500W
Kind of package: tube
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40GR120B2D30 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max
Mounting: THT
Power dissipation: 500W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max
Mounting: THT
Power dissipation: 500W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
Produkt ist nicht verfügbar
| APT40GR120B2D30 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max
Mounting: THT
Power dissipation: 500W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 40A; 500W; T-Max
Mounting: THT
Power dissipation: 500W
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Technology: NPT; POWER MOS 8®
Part status: Not recommended for new designs
Case: T-Max
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±30V
Collector current: 40A
Pulsed collector current: 160A
Turn-on time: 47ns
Turn-off time: 232ns
Type of transistor: IGBT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40GR120S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 500W; D3PAK
Kind of package: tube
Power dissipation: 500W
Gate charge: 0.21µC
Technology: NPT Ultra Fast IGBT
Type of transistor: IGBT
Turn-off time: 232ns
Turn-on time: 47ns
Part status: Not recommended for new designs
Pulsed collector current: 160A
Collector current: 40A
Gate-emitter voltage: ±30V
Collector-emitter voltage: 1.2kV
Case: D3PAK
Mounting: SMD
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 500W; D3PAK
Kind of package: tube
Power dissipation: 500W
Gate charge: 0.21µC
Technology: NPT Ultra Fast IGBT
Type of transistor: IGBT
Turn-off time: 232ns
Turn-on time: 47ns
Part status: Not recommended for new designs
Pulsed collector current: 160A
Collector current: 40A
Gate-emitter voltage: ±30V
Collector-emitter voltage: 1.2kV
Case: D3PAK
Mounting: SMD
Produkt ist nicht verfügbar
| APT40GR120S |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 500W; D3PAK
Kind of package: tube
Power dissipation: 500W
Gate charge: 0.21µC
Technology: NPT Ultra Fast IGBT
Type of transistor: IGBT
Turn-off time: 232ns
Turn-on time: 47ns
Part status: Not recommended for new designs
Pulsed collector current: 160A
Collector current: 40A
Gate-emitter voltage: ±30V
Collector-emitter voltage: 1.2kV
Case: D3PAK
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1200V; 40A; 500W; D3PAK
Kind of package: tube
Power dissipation: 500W
Gate charge: 0.21µC
Technology: NPT Ultra Fast IGBT
Type of transistor: IGBT
Turn-off time: 232ns
Turn-on time: 47ns
Part status: Not recommended for new designs
Pulsed collector current: 160A
Collector current: 40A
Gate-emitter voltage: ±30V
Collector-emitter voltage: 1.2kV
Case: D3PAK
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40M35JVR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 400V; 93A; ISOTOP; screw; 700W; Ugs: ±30V
Mechanical mounting: screw
Gate-source voltage: ±30V
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 400V
Drain current: 93A
On-state resistance: 35mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 400V; 93A; ISOTOP; screw; 700W; Ugs: ±30V
Mechanical mounting: screw
Gate-source voltage: ±30V
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 400V
Drain current: 93A
On-state resistance: 35mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT40M35JVR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 400V; 93A; ISOTOP; screw; 700W; Ugs: ±30V
Mechanical mounting: screw
Gate-source voltage: ±30V
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 400V
Drain current: 93A
On-state resistance: 35mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 400V; 93A; ISOTOP; screw; 700W; Ugs: ±30V
Mechanical mounting: screw
Gate-source voltage: ±30V
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 400V
Drain current: 93A
On-state resistance: 35mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40M70JVR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 400V; 53A; ISOTOP; screw; 450W; Ugs: ±30V
Mechanical mounting: screw
Gate-source voltage: ±30V
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 400V
Drain current: 53A
On-state resistance: 70mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 400V; 53A; ISOTOP; screw; 450W; Ugs: ±30V
Mechanical mounting: screw
Gate-source voltage: ±30V
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 400V
Drain current: 53A
On-state resistance: 70mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT40M70JVR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 400V; 53A; ISOTOP; screw; 450W; Ugs: ±30V
Mechanical mounting: screw
Gate-source voltage: ±30V
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 400V
Drain current: 53A
On-state resistance: 70mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 400V; 53A; ISOTOP; screw; 450W; Ugs: ±30V
Mechanical mounting: screw
Gate-source voltage: ±30V
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 400V
Drain current: 53A
On-state resistance: 70mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40M70LVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 57A; 520W
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 57A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 495nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 57A; 520W
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 57A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 495nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APT40M70LVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 57A; 520W
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 57A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 495nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 400V; 57A; 520W
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 57A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 70mΩ
Mounting: THT
Gate charge: 495nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT40N60JCU2 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W
Technology: CoolMOS™
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 290W
Case: ISOTOP
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W
Technology: CoolMOS™
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 290W
Case: ISOTOP
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Semiconductor structure: diode/transistor
Electrical mounting: screw
Topology: boost chopper
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar