![APT40N60JCU2 APT40N60JCU2](https://mm.digikey.com/Volume0/opasdata/d220001/medias/images/2595/SOT-227-4%2C%20miniBLOC.jpg)
APT40N60JCU2 Microchip Technology
![7016-apt40n60jcu2-datasheet](/images/adobe-acrobat.png)
Description: MOSFET N-CH 600V 40A SOT227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 45.46 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details APT40N60JCU2 Microchip Technology
Description: MOSFET N-CH 600V 40A SOT227, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 1mA, Supplier Device Package: SOT-227, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 259 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7015 pF @ 25 V.
Weitere Produktangebote APT40N60JCU2
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
![]() |
APT40N60JCU2 | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
|
APT40N60JCU2 | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 30A Case: ISOTOP Topology: boost chopper Electrical mounting: screw Polarisation: unipolar On-state resistance: 70mΩ Pulsed drain current: 120A Power dissipation: 290W Technology: CoolMOS™ Gate-source voltage: ±20V Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
APT40N60JCU2 | Hersteller : MICROSEMI |
![]() Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
![]() |
APT40N60JCU2 | Hersteller : Microchip Technology |
![]() |
Produkt ist nicht verfügbar |
|
APT40N60JCU2 | Hersteller : MICROCHIP (MICROSEMI) |
![]() Description: Module; diode/transistor; 600V; 30A; ISOTOP; screw; Idm: 120A; 290W Type of module: MOSFET transistor Semiconductor structure: diode/transistor Drain-source voltage: 600V Drain current: 30A Case: ISOTOP Topology: boost chopper Electrical mounting: screw Polarisation: unipolar On-state resistance: 70mΩ Pulsed drain current: 120A Power dissipation: 290W Technology: CoolMOS™ Gate-source voltage: ±20V Mechanical mounting: screw |
Produkt ist nicht verfügbar |