APT50GN60BDQ3G Microchip Technology
Hersteller: Microchip TechnologyDescription: IGBT FIELDSTOP COMBI 600V 50A TO
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/230ns
Switching Energy: 1.185mJ (on), 1.565mJ (off)
Test Condition: 400V, 50A, 4.3Ohm, 15V
Gate Charge: 325 nC
Part Status: Active
Current - Collector (Ic) (Max): 107 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 366 W
auf Bestellung 127 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 17 EUR |
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Technische Details APT50GN60BDQ3G Microchip Technology
Description: IGBT FIELDSTOP COMBI 600V 50A TO, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 35 ns, Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 50A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20ns/230ns, Switching Energy: 1.185mJ (on), 1.565mJ (off), Test Condition: 400V, 50A, 4.3Ohm, 15V, Gate Charge: 325 nC, Part Status: Active, Current - Collector (Ic) (Max): 107 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 366 W.
Weitere Produktangebote APT50GN60BDQ3G nach Preis ab 15.08 EUR bis 71.5 EUR
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APT50GN60BDQ3G | Hersteller : Microchip Technology |
IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 50 A TO-247 |
auf Bestellung 77 Stücke: Lieferzeit 10-14 Tag (e) |
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APT50GN60BDQ3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector current: 64A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 150A Turn-on time: 45ns Turn-off time: 0.4µs Collector-emitter voltage: 600V Power dissipation: 366W Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 325nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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APT50GN60BDQ3G | Hersteller : MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 64A; 366W; TO247-3 Type of transistor: IGBT Collector current: 64A Case: TO247-3 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 150A Turn-on time: 45ns Turn-off time: 0.4µs Collector-emitter voltage: 600V Power dissipation: 366W Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 325nC |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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