Technische Details APT5024SVRG Microsemi
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A, Case: D3PAK, Mounting: SMD, On-state resistance: 0.24Ω, Type of transistor: N-MOSFET, Power dissipation: 280W, Polarisation: unipolar, Gate charge: 0.21µC, Technology: POWER MOS 5®, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 88A, Drain-source voltage: 500V, Drain current: 22A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote APT5024SVRG
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APT5024SVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Case: D3PAK Mounting: SMD On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 0.21µC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 500V Drain current: 22A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT5024SVRG | Hersteller : MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 500V; 22A; Idm: 88A Case: D3PAK Mounting: SMD On-state resistance: 0.24Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 0.21µC Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 88A Drain-source voltage: 500V Drain current: 22A |
Produkt ist nicht verfügbar |