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2EDN8523FXTMA1 2EDN8523FXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
2EDN8524FXTMA1 2EDN8524FXTMA1 Infineon Technologies Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727 Description: IC GATE DRVR LOW-SIDE DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.88 EUR
5000+ 0.85 EUR
7500+ 0.84 EUR
Mindestbestellmenge: 2500
BFP780H6327XTSA1 BFP780H6327XTSA1 Infineon Technologies Infineon-BFP780-DS-v04_00-EN.pdf?fileId=5546d46265f064ff01663896b2fe4eb3 Description: RF TRANS NPN 6.1V 900MHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 600mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 6.1V
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 90mA, 5V
Frequency - Transition: 900MHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
Produkt ist nicht verfügbar
BGA729N6E6327XTSA1 BGA729N6E6327XTSA1 Infineon Technologies Infineon-BGA729N6-DS-v03_00-EN.pdf?fileId=5546d46254e133b401552f3e23ae69c3 Description: IC RF AMP 70MHZ-1GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 70MHz ~ 1GHz
Voltage - Supply: 1.5V ~ 3.3V
Gain: 16.3dB
Current - Supply: 6.3mA
Noise Figure: 1.05dB
Test Frequency: 70MHz ~ 1GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
Produkt ist nicht verfügbar
BSC015NE2LS5IATMA1 BSC015NE2LS5IATMA1 Infineon Technologies Infineon-BSC015NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3bdacb5c1b44 Description: MOSFET N-CH 25V 33A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
auf Bestellung 5000 Stücke:
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5000+0.93 EUR
Mindestbestellmenge: 5000
BSC0504NSIATMA1 BSC0504NSIATMA1 Infineon Technologies Infineon-BSC0504NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f0286ff3c3d3d Description: MOSFET N-CH 30V 21A/72A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.69 EUR
10000+ 0.66 EUR
Mindestbestellmenge: 5000
BSC093N15NS5ATMA1 BSC093N15NS5ATMA1 Infineon Technologies Infineon-BSC093N15NS5-DS-v02_00-EN.pdf?fileId=5546d462503812bb01507033a3fa1175 Description: MOSFET N-CH 150V 87A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 44A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
Produkt ist nicht verfügbar
BSC160N15NS5ATMA1 BSC160N15NS5ATMA1 Infineon Technologies Infineon-BSC160N15NS5-DS-v02_02-EN.pdf?fileId=5546d46253f650570154a055b7215b1b Description: MOSFET N-CH 150V 56A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 28A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 60µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.59 EUR
Mindestbestellmenge: 5000
BSL305SPEH6327XTSA1 BSL305SPEH6327XTSA1 Infineon Technologies Infineon-BSL305SPE-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a537910c25458 Description: MOSFET P-CH 30V 5.3A TSOP-6
Produkt ist nicht verfügbar
BSP179H6327XTSA1 BSP179H6327XTSA1 Infineon Technologies BSP179.pdf Description: MOSFET N-CH 400V 210MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 18Ohm @ 210mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
Produkt ist nicht verfügbar
BSZ013NE2LS5IATMA1 BSZ013NE2LS5IATMA1 Infineon Technologies Infineon-BSZ013NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f6030a74c7cc5 Description: MOSFET N-CH 25V 32A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
auf Bestellung 30000 Stücke:
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5000+1.2 EUR
Mindestbestellmenge: 5000
BSZ0502NSIATMA1 BSZ0502NSIATMA1 Infineon Technologies Infineon-BSZ0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe57d2cf66d3 Description: MOSFET N-CH 30V 22A 8SON
Produkt ist nicht verfügbar
BTT60101EKBXUMA1 BTT60101EKBXUMA1 Infineon Technologies BTT6010-1EKB.pdf Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 10mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
CM01BXUMA1 Infineon Technologies Description: LED LIGHTING 8DSO
Produkt ist nicht verfügbar
IDM10G120C5XTMA1 IDM10G120C5XTMA1 Infineon Technologies Infineon-IDM10G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f97c40a77423d Description: DIODE SIL CARB 1.2KV 38A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 29pF @ 800V, 1MHz
Current - Average Rectified (Io): 38A
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 62 µA @ 12 V
auf Bestellung 2500 Stücke:
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2500+3.58 EUR
Mindestbestellmenge: 2500
IDP2301XUMA1 Infineon Technologies Description: AC/DC DIGITAL PLATFORM
Produkt ist nicht verfügbar
IKCM10B60HAXKMA1 IKCM10B60HAXKMA1 Infineon Technologies IKCM10B60HA.pdf Description: IFPS MODULES
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
IKCM15F60HAXKMA1 IKCM15F60HAXKMA1 Infineon Technologies IKCM15F60HA.pdf Description: IFPS MODULES
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
IKCM15L60GDXKMA1 IKCM15L60GDXKMA1 Infineon Technologies Infineon-IKCM15L60GD-DS-v01_01-EN.pdf?fileId=5546d46254bdc4f50154cd2e84aa378d Description: IFPS MODULE 600V 20A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 600 V
auf Bestellung 185 Stücke:
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2+16.39 EUR
14+ 15.07 EUR
28+ 14.45 EUR
112+ 13.75 EUR
Mindestbestellmenge: 2
IKCM15L60HDXKMA1 IKCM15L60HDXKMA1 Infineon Technologies IKCM15L60HD.pdf Description: IFPS MODULES
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
ILD2111XUMA2 ILD2111XUMA2 Infineon Technologies Infineon-ILD2111-DS-v01_00-EN.pdf?fileId=5546d462518ffd8501521b9a7b9a2afd Description: IC LED DRIVER CTRLR PWM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8-58
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
Part Status: Obsolete
Produkt ist nicht verfügbar
IPA50R190CEXKSA2 IPA50R190CEXKSA2 Infineon Technologies Infineon-IPA50R190CE-DS-v02_02-EN.pdf?fileId=5546d4624f205c9a014f5fde3aa57bf4 Description: MOSFET N-CH 500V 18.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
auf Bestellung 507 Stücke:
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4+4.42 EUR
10+ 2.86 EUR
100+ 1.97 EUR
500+ 1.59 EUR
Mindestbestellmenge: 4
IPA65R1K0CEXKSA1 IPA65R1K0CEXKSA1 Infineon Technologies Infineon-IPA65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384177bc470f7 Description: MOSFET N-CH 650V 7.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
auf Bestellung 959 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.8 EUR
50+ 1.43 EUR
100+ 1.13 EUR
500+ 0.96 EUR
Mindestbestellmenge: 10
IPA65R1K5CEXKSA1 IPA65R1K5CEXKSA1 Infineon Technologies Infineon-IPA65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384e0f7a67456 Description: MOSFET N-CH 650V 5.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Produkt ist nicht verfügbar
IPAW60R190CEXKSA1 IPAW60R190CEXKSA1 Infineon Technologies Infineon-IPAW60R190CE-DS-v02_01-EN.pdf?fileId=5546d46253f65057015418cb305b4e0b Description: MOSFET N-CH 600V 26.7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Produkt ist nicht verfügbar
IPAW60R280CEXKSA1 IPAW60R280CEXKSA1 Infineon Technologies Infineon-IPAW60R280CE-DS-v02_01-EN.pdf?fileId=5546d46253f65057015418cb38a34e0d Description: MOSFET N-CH 600V 19.3A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Variant
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220 Full Pack, Wide Creepage
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
IPAW60R380CEXKSA1 IPAW60R380CEXKSA1 Infineon Technologies Infineon-IPAW60R380CE-DS-v02_01-EN.pdf?fileId=5546d46253f65057015418cb427d4e0f Description: MOSFET N-CH 600V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
IPAW60R600CEXKSA1 IPAW60R600CEXKSA1 Infineon Technologies Infineon-IPAW60R600CE-DS-v02_02-EN.pdf?fileId=5546d46253f65057015418cb4a6b4e11 Description: MOSFET N-CH 600V 10.3A TO220
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
IPB60R040C7ATMA1 IPB60R040C7ATMA1 Infineon Technologies Infineon-IPB60R040C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101591799c3465e8a Description: MOSFET N-CH 600V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+8.54 EUR
Mindestbestellmenge: 1000
IPB60R060C7ATMA1 IPB60R060C7ATMA1 Infineon Technologies Infineon-IPB60R060C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc1015917ac25385ea1 Description: MOSFET N-CH 600V 35A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: D2PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
Produkt ist nicht verfügbar
IPB60R099C7ATMA1 IPB60R099C7ATMA1 Infineon Technologies Infineon-IPB60R099C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc1015917abf8885e9d Description: MOSFET N-CH 600V 22A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Produkt ist nicht verfügbar
IPB60R120C7ATMA1 IPB60R120C7ATMA1 Infineon Technologies Infineon-IPB60R120C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc1015917ac3d3b5ea3 Description: MOSFET N-CH 600V 19A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Produkt ist nicht verfügbar
IPB60R180C7ATMA1 IPB60R180C7ATMA1 Infineon Technologies Infineon-IPB60R180C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc1015917ac0f4f5e9f Description: MOSFET N-CH 600V 13A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5.3A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Produkt ist nicht verfügbar
IPD60R2K1CEAUMA1 IPD60R2K1CEAUMA1 Infineon Technologies Infineon-IPD60R2K1CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa Description: MOSFET N-CH 600V 2.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.35 EUR
5000+ 0.33 EUR
Mindestbestellmenge: 2500
IPD60R650CEBTMA1 IPD60R650CEBTMA1 Infineon Technologies Infineon-IPD60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c83678231f12 Description: MOSFET N-CH 600V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
IPD65R400CEAUMA1 IPD65R400CEAUMA1 Infineon Technologies Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67 Description: MOSFET N-CH 650V 15.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.75 EUR
5000+ 0.71 EUR
12500+ 0.68 EUR
Mindestbestellmenge: 2500
IPD70R1K4CEAUMA1 IPD70R1K4CEAUMA1 Infineon Technologies Infineon-IPD70R1K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a2a2125c7af1 Description: MOSFET N-CH 700V 5.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.48 EUR
5000+ 0.44 EUR
7500+ 0.42 EUR
12500+ 0.41 EUR
Mindestbestellmenge: 2500
IPD70R2K0CEAUMA1 IPD70R2K0CEAUMA1 Infineon Technologies Infineon-IPD70R2K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539ebc2c39500f Description: MOSFET N-CH 700V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 100 V
Produkt ist nicht verfügbar
IPD70R600CEAUMA1 IPD70R600CEAUMA1 Infineon Technologies Infineon-IPD70R600CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539ed7bcca509d Description: MOSFET N-CH 700V 10.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
Produkt ist nicht verfügbar
IPD70R950CEAUMA1 IPD70R950CEAUMA1 Infineon Technologies Infineon-IPD70R950CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a32b85797d3c Description: MOSFET N-CH 700V 7.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Produkt ist nicht verfügbar
IPS70R600CEAKMA1 IPS70R600CEAKMA1 Infineon Technologies Infineon-IPS70R600CE-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153e153a04e421a Description: MOSFET N-CH 700V 10.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
Produkt ist nicht verfügbar
IPU50R1K4CEAKMA1 IPU50R1K4CEAKMA1 Infineon Technologies Infineon-IPD50R1K4CE-DS-v02_03-EN.pdf?fileId=db3a304339dcf4b10139e7c997862ca7 Description: MOSFET N-CH 500V 3.1A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
Produkt ist nicht verfügbar
IPU50R2K0CEAKMA1 IPU50R2K0CEAKMA1 Infineon Technologies Infineon-IPD50R2K0CE-DS-v02_03-EN.pdf?fileId=db3a30433ecb86d4013ed08fda5f0f0f Description: MOSFET N-CH 500V 2.4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
Produkt ist nicht verfügbar
IPU50R3K0CEAKMA1 IPU50R3K0CEAKMA1 Infineon Technologies Infineon-IPD50R3K0CE-DS-v02_02-EN.pdf?fileId=db3a304339dcf4b10139e7e9ff592ce4 Description: MOSFET N-CH 500V 1.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
Produkt ist nicht verfügbar
IPU50R950CEAKMA2 IPU50R950CEAKMA2 Infineon Technologies Infineon-IPU50R950CE-DS-v02_02-EN.pdf?fileId=db3a3043382e837301385194b31e1064 Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Produkt ist nicht verfügbar
IPU60R1K0CEAKMA2 IPU60R1K0CEAKMA2 Infineon Technologies Infineon-IPU60R1K0CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c7c897d71e96 Description: MOSFET N-CH 600V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Produkt ist nicht verfügbar
IPU60R1K5CEAKMA2 IPU60R1K5CEAKMA2 Infineon Technologies Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98 Description: MOSFET N-CH 600V 3.1A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 988 Stücke:
Lieferzeit 10-14 Tag (e)
18+1.02 EUR
75+ 0.84 EUR
150+ 0.61 EUR
525+ 0.51 EUR
Mindestbestellmenge: 18
IPW60R060C7XKSA1 IPW60R060C7XKSA1 Infineon Technologies Infineon-IPW60R060C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151a130041f2b80 Description: MOSFET N-CH 600V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.3 EUR
10+ 8.37 EUR
100+ 6.13 EUR
Mindestbestellmenge: 2
IPW60R120C7XKSA1 IPW60R120C7XKSA1 Infineon Technologies Infineon-IPW60R120C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151a0cb7d622aa6 Description: MOSFET N-CH 600V 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.5 EUR
10+ 5.68 EUR
100+ 4.07 EUR
Mindestbestellmenge: 3
IPZ60R060C7XKSA1 IPZ60R060C7XKSA1 Infineon Technologies Infineon-IPZ60R060C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151a515b3f40f2e Description: MOSFET N-CH 600V 35A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.88 EUR
10+ 10.18 EUR
Mindestbestellmenge: 2
SLB9665VQ20FW551XUMA1 Infineon Technologies Infineon-TPM%20SLB%209665-DS-v01_00-EN.pdf?fileId=5546d4625185e0e201518b83d9273d87 Description: TPM
Produkt ist nicht verfügbar
SLB9665XQ20FW551XUMA1 Infineon Technologies Infineon-TPM%20SLB%209665-DS-v01_00-EN.pdf?fileId=5546d4625185e0e201518b83d9273d87 Description: TPM
Produkt ist nicht verfügbar
SLB9670VQ20FW740XUMA2 Infineon Technologies Description: TPM
Produkt ist nicht verfügbar
SLB9670XQ20FW740XUMA2 Infineon Technologies Description: TPM
Produkt ist nicht verfügbar
SLE950510434WLPXTSA1 SLE950510434WLPXTSA1 Infineon Technologies Part_Number_Guide_Web.pdf Description: IC BATT MGMT
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
SLJ32GDA064CLM84XHSA1 Infineon Technologies Description: IDENT
Produkt ist nicht verfügbar
SLJ32GDA064CLMCC8IXHSA1 Infineon Technologies Description: IDENT
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SLJ32GDA064CLMCS8XHSA1 Infineon Technologies Description: IDENT
Produkt ist nicht verfügbar
SLJ52GCA128CRM48XHSA2 Infineon Technologies Description: IDENT
Produkt ist nicht verfügbar
SLJ52GDL128CRCOM86XHSA1 Infineon Technologies Description: IDENT
Produkt ist nicht verfügbar
2EDN8523FXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8523FXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Inverting
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
2EDN8524FXTMA1 Infineon-2EDN752x-2EDN852x-DS--DS-v02_03-EN.pdf?fileId=5546d462525dbac40152abcc7dbb1727
2EDN8524FXTMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-TSSOP-8
Rise / Fall Time (Typ): 5.3ns, 4.5ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 1.9V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.88 EUR
5000+ 0.85 EUR
7500+ 0.84 EUR
Mindestbestellmenge: 2500
BFP780H6327XTSA1 Infineon-BFP780-DS-v04_00-EN.pdf?fileId=5546d46265f064ff01663896b2fe4eb3
BFP780H6327XTSA1
Hersteller: Infineon Technologies
Description: RF TRANS NPN 6.1V 900MHZ SOT343
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 27dB
Power - Max: 600mW
Current - Collector (Ic) (Max): 120mA
Voltage - Collector Emitter Breakdown (Max): 6.1V
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 90mA, 5V
Frequency - Transition: 900MHz
Noise Figure (dB Typ @ f): 1.2dB ~ 2.4dB @ 900MHz ~ 3.5GHz
Supplier Device Package: PG-SOT343-4-1
Part Status: Obsolete
Produkt ist nicht verfügbar
BGA729N6E6327XTSA1 Infineon-BGA729N6-DS-v03_00-EN.pdf?fileId=5546d46254e133b401552f3e23ae69c3
BGA729N6E6327XTSA1
Hersteller: Infineon Technologies
Description: IC RF AMP 70MHZ-1GHZ TSNP6
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 70MHz ~ 1GHz
Voltage - Supply: 1.5V ~ 3.3V
Gain: 16.3dB
Current - Supply: 6.3mA
Noise Figure: 1.05dB
Test Frequency: 70MHz ~ 1GHz
Supplier Device Package: PG-TSNP-6-2
Part Status: Active
Produkt ist nicht verfügbar
BSC015NE2LS5IATMA1 Infineon-BSC015NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3bdacb5c1b44
BSC015NE2LS5IATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 33A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 12 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.93 EUR
Mindestbestellmenge: 5000
BSC0504NSIATMA1 Infineon-BSC0504NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f0286ff3c3d3d
BSC0504NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 21A/72A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 72A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 15 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+0.69 EUR
10000+ 0.66 EUR
Mindestbestellmenge: 5000
BSC093N15NS5ATMA1 Infineon-BSC093N15NS5-DS-v02_00-EN.pdf?fileId=5546d462503812bb01507033a3fa1175
BSC093N15NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 87A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 44A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
Produkt ist nicht verfügbar
BSC160N15NS5ATMA1 Infineon-BSC160N15NS5-DS-v02_02-EN.pdf?fileId=5546d46253f650570154a055b7215b1b
BSC160N15NS5ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 56A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 28A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 60µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 23.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 75 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.59 EUR
Mindestbestellmenge: 5000
BSL305SPEH6327XTSA1 Infineon-BSL305SPE-DS-v02_00-EN.pdf?fileId=5546d4624a0bf290014a537910c25458
BSL305SPEH6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 30V 5.3A TSOP-6
Produkt ist nicht verfügbar
BSP179H6327XTSA1 BSP179.pdf
BSP179H6327XTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 400V 210MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210mA (Ta)
Rds On (Max) @ Id, Vgs: 18Ohm @ 210mA, 10V
FET Feature: Depletion Mode
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 94µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
Produkt ist nicht verfügbar
BSZ013NE2LS5IATMA1 Infineon-BSZ013NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f6030a74c7cc5
BSZ013NE2LS5IATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 25V 32A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 12 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5000+1.2 EUR
Mindestbestellmenge: 5000
BSZ0502NSIATMA1 Infineon-BSZ0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe57d2cf66d3
BSZ0502NSIATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 22A 8SON
Produkt ist nicht verfügbar
BTT60101EKBXUMA1 BTT6010-1EKB.pdf
BTT60101EKBXUMA1
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 10mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 36V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-47-EP
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Produkt ist nicht verfügbar
CM01BXUMA1
Hersteller: Infineon Technologies
Description: LED LIGHTING 8DSO
Produkt ist nicht verfügbar
IDM10G120C5XTMA1 Infineon-IDM10G120C5-DS-v02_00-EN.pdf?fileId=5546d4624f72be57014f97c40a77423d
IDM10G120C5XTMA1
Hersteller: Infineon Technologies
Description: DIODE SIL CARB 1.2KV 38A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 29pF @ 800V, 1MHz
Current - Average Rectified (Io): 38A
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 62 µA @ 12 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+3.58 EUR
Mindestbestellmenge: 2500
IDP2301XUMA1
Hersteller: Infineon Technologies
Description: AC/DC DIGITAL PLATFORM
Produkt ist nicht verfügbar
IKCM10B60HAXKMA1 IKCM10B60HA.pdf
IKCM10B60HAXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
IKCM15F60HAXKMA1 IKCM15F60HA.pdf
IKCM15F60HAXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
IKCM15L60GDXKMA1 Infineon-IKCM15L60GD-DS-v01_01-EN.pdf?fileId=5546d46254bdc4f50154cd2e84aa378d
IKCM15L60GDXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULE 600V 20A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 600 V
auf Bestellung 185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+16.39 EUR
14+ 15.07 EUR
28+ 14.45 EUR
112+ 13.75 EUR
Mindestbestellmenge: 2
IKCM15L60HDXKMA1 IKCM15L60HD.pdf
IKCM15L60HDXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
Produkt ist nicht verfügbar
ILD2111XUMA2 Infineon-ILD2111-DS-v01_00-EN.pdf?fileId=5546d462518ffd8501521b9a7b9a2afd
ILD2111XUMA2
Hersteller: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Outputs: 1
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: PG-DSO-8-58
Dimming: PWM
Voltage - Supply (Min): 6V
Voltage - Supply (Max): 24V
Part Status: Obsolete
Produkt ist nicht verfügbar
IPA50R190CEXKSA2 Infineon-IPA50R190CE-DS-v02_02-EN.pdf?fileId=5546d4624f205c9a014f5fde3aa57bf4
IPA50R190CEXKSA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 18.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.2A, 13V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 510µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1137 pF @ 100 V
auf Bestellung 507 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.42 EUR
10+ 2.86 EUR
100+ 1.97 EUR
500+ 1.59 EUR
Mindestbestellmenge: 4
IPA65R1K0CEXKSA1 Infineon-IPA65R1K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384177bc470f7
IPA65R1K0CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
auf Bestellung 959 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.8 EUR
50+ 1.43 EUR
100+ 1.13 EUR
500+ 0.96 EUR
Mindestbestellmenge: 10
IPA65R1K5CEXKSA1 Infineon-IPA65R1K5CE-DS-v02_00-EN.pdf?fileId=5546d462533600a4015384e0f7a67456
IPA65R1K5CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 5.2A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Produkt ist nicht verfügbar
IPAW60R190CEXKSA1 Infineon-IPAW60R190CE-DS-v02_01-EN.pdf?fileId=5546d46253f65057015418cb305b4e0b
IPAW60R190CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 26.7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Produkt ist nicht verfügbar
IPAW60R280CEXKSA1 Infineon-IPAW60R280CE-DS-v02_01-EN.pdf?fileId=5546d46253f65057015418cb38a34e0d
IPAW60R280CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19.3A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Variant
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220 Full Pack, Wide Creepage
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
IPAW60R380CEXKSA1 Infineon-IPAW60R380CE-DS-v02_01-EN.pdf?fileId=5546d46253f65057015418cb427d4e0f
IPAW60R380CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 15A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.8A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO220-FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 100 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
IPAW60R600CEXKSA1 Infineon-IPAW60R600CE-DS-v02_02-EN.pdf?fileId=5546d46253f65057015418cb4a6b4e11
IPAW60R600CEXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 10.3A TO220
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
IPB60R040C7ATMA1 Infineon-IPB60R040C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc101591799c3465e8a
IPB60R040C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 50A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.24mA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1000+8.54 EUR
Mindestbestellmenge: 1000
IPB60R060C7ATMA1 Infineon-IPB60R060C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc1015917ac25385ea1
IPB60R060C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 35A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: D2PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
Produkt ist nicht verfügbar
IPB60R099C7ATMA1 Infineon-IPB60R099C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc1015917abf8885e9d
IPB60R099C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 22A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 490µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1819 pF @ 400 V
Produkt ist nicht verfügbar
IPB60R120C7ATMA1 Infineon-IPB60R120C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc1015917ac3d3b5ea3
IPB60R120C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
Produkt ist nicht verfügbar
IPB60R180C7ATMA1 Infineon-IPB60R180C7-DS-v02_00-EN.pdf?fileId=5546d46258fc0bc1015917ac0f4f5e9f
IPB60R180C7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 5.3A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 400 V
Produkt ist nicht verfügbar
IPD60R2K1CEAUMA1 Infineon-IPD60R2K1CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa
IPD60R2K1CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 2.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.35 EUR
5000+ 0.33 EUR
Mindestbestellmenge: 2500
IPD60R650CEBTMA1 Infineon-IPD60R650CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c83678231f12
IPD60R650CEBTMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
Produkt ist nicht verfügbar
IPD65R400CEAUMA1 Infineon-IPD65R400CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539eb64cd44f67
IPD65R400CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 15.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.1A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 3.2A, 10V
Power Dissipation (Max): 118W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 320µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.75 EUR
5000+ 0.71 EUR
12500+ 0.68 EUR
Mindestbestellmenge: 2500
IPD70R1K4CEAUMA1 Infineon-IPD70R1K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a2a2125c7af1
IPD70R1K4CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 5.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.48 EUR
5000+ 0.44 EUR
7500+ 0.42 EUR
12500+ 0.41 EUR
Mindestbestellmenge: 2500
IPD70R2K0CEAUMA1 Infineon-IPD70R2K0CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539ebc2c39500f
IPD70R2K0CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 100 V
Produkt ist nicht verfügbar
IPD70R600CEAUMA1 Infineon-IPD70R600CE-DS-v02_00-EN.pdf?fileId=5546d462533600a401539ed7bcca509d
IPD70R600CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 10.5A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
Produkt ist nicht verfügbar
IPD70R950CEAUMA1 Infineon-IPD70R950CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a32b85797d3c
IPD70R950CEAUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 7.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
Produkt ist nicht verfügbar
IPS70R600CEAKMA1 Infineon-IPS70R600CE-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153e153a04e421a
IPS70R600CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 10.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 474 pF @ 100 V
Produkt ist nicht verfügbar
IPU50R1K4CEAKMA1 Infineon-IPD50R1K4CE-DS-v02_03-EN.pdf?fileId=db3a304339dcf4b10139e7c997862ca7
IPU50R1K4CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 3.1A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 900mA, 13V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 178 pF @ 100 V
Produkt ist nicht verfügbar
IPU50R2K0CEAKMA1 Infineon-IPD50R2K0CE-DS-v02_03-EN.pdf?fileId=db3a30433ecb86d4013ed08fda5f0f0f
IPU50R2K0CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 2.4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 600mA, 13V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 124 pF @ 100 V
Produkt ist nicht verfügbar
IPU50R3K0CEAKMA1 Infineon-IPD50R3K0CE-DS-v02_02-EN.pdf?fileId=db3a304339dcf4b10139e7e9ff592ce4
IPU50R3K0CEAKMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 1.7A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
Produkt ist nicht verfügbar
IPU50R950CEAKMA2 Infineon-IPU50R950CE-DS-v02_02-EN.pdf?fileId=db3a3043382e837301385194b31e1064
IPU50R950CEAKMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.2A, 13V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 231 pF @ 100 V
Produkt ist nicht verfügbar
IPU60R1K0CEAKMA2 Infineon-IPU60R1K0CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c7c897d71e96
IPU60R1K0CEAKMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 4.3A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 1.5A, 10V
Power Dissipation (Max): 61W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO251-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 100 V
Produkt ist nicht verfügbar
IPU60R1K5CEAKMA2 Infineon-IPD60R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c7c89cc51e98
IPU60R1K5CEAKMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.1A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.1A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
auf Bestellung 988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
18+1.02 EUR
75+ 0.84 EUR
150+ 0.61 EUR
525+ 0.51 EUR
Mindestbestellmenge: 18
IPW60R060C7XKSA1 Infineon-IPW60R060C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151a130041f2b80
IPW60R060C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 35A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
auf Bestellung 230 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+12.3 EUR
10+ 8.37 EUR
100+ 6.13 EUR
Mindestbestellmenge: 2
IPW60R120C7XKSA1 Infineon-IPW60R120C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151a0cb7d622aa6
IPW60R120C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 7.8A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 390µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 400 V
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.5 EUR
10+ 5.68 EUR
100+ 4.07 EUR
Mindestbestellmenge: 3
IPZ60R060C7XKSA1 Infineon-IPZ60R060C7-DS-v02_00-EN.pdf?fileId=5546d462518ffd850151a515b3f40f2e
IPZ60R060C7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 35A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 400 V
auf Bestellung 235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.88 EUR
10+ 10.18 EUR
Mindestbestellmenge: 2
SLB9665VQ20FW551XUMA1 Infineon-TPM%20SLB%209665-DS-v01_00-EN.pdf?fileId=5546d4625185e0e201518b83d9273d87
Hersteller: Infineon Technologies
Description: TPM
Produkt ist nicht verfügbar
SLB9665XQ20FW551XUMA1 Infineon-TPM%20SLB%209665-DS-v01_00-EN.pdf?fileId=5546d4625185e0e201518b83d9273d87
Hersteller: Infineon Technologies
Description: TPM
Produkt ist nicht verfügbar
SLB9670VQ20FW740XUMA2
Hersteller: Infineon Technologies
Description: TPM
Produkt ist nicht verfügbar
SLB9670XQ20FW740XUMA2
Hersteller: Infineon Technologies
Description: TPM
Produkt ist nicht verfügbar
SLE950510434WLPXTSA1 Part_Number_Guide_Web.pdf
SLE950510434WLPXTSA1
Hersteller: Infineon Technologies
Description: IC BATT MGMT
Packaging: Tape & Reel (TR)
Part Status: Active
Produkt ist nicht verfügbar
SLJ32GDA064CLM84XHSA1
Hersteller: Infineon Technologies
Description: IDENT
Produkt ist nicht verfügbar
SLJ32GDA064CLMCC8IXHSA1
Hersteller: Infineon Technologies
Description: IDENT
Produkt ist nicht verfügbar
SLJ32GDA064CLMCS8XHSA1
Hersteller: Infineon Technologies
Description: IDENT
Produkt ist nicht verfügbar
SLJ52GCA128CRM48XHSA2
Hersteller: Infineon Technologies
Description: IDENT
Produkt ist nicht verfügbar
SLJ52GDL128CRCOM86XHSA1
Hersteller: Infineon Technologies
Description: IDENT
Produkt ist nicht verfügbar
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