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IPD60R2K1CEAUMA1

IPD60R2K1CEAUMA1 Infineon Technologies

Infineon-IPD60R2K1CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 2.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.35 EUR
5000+ 0.33 EUR
Mindestbestellmenge: 2500
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Technische Details IPD60R2K1CEAUMA1 Infineon Technologies

Description: MOSFET N-CH 600V 2.3A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V, Power Dissipation (Max): 38W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 60µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V.

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Preis ohne MwSt
IPD60R2K1CEAUMA1 IPD60R2K1CEAUMA1 Hersteller : Infineon Technologies Infineon-IPD60R2K1CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa Description: MOSFET N-CH 600V 2.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 760mA, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
auf Bestellung 10286 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.04 EUR
20+ 0.89 EUR
100+ 0.62 EUR
500+ 0.48 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 17
IPD60R2K1CEAUMA1 IPD60R2K1CEAUMA1 Hersteller : Infineon Technologies Infineon_IPD60R2K1CE_DS_v02_02_EN-1731774.pdf MOSFET CONSUMER
auf Bestellung 15825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.05 EUR
10+ 0.86 EUR
100+ 0.63 EUR
500+ 0.49 EUR
1000+ 0.4 EUR
2500+ 0.32 EUR
10000+ 0.31 EUR
Mindestbestellmenge: 3
IPD60R2K1CEAUMA1 IPD60R2K1CEAUMA1 Hersteller : Infineon Technologies 270332841243439infineon-ipd60r2k1ce-ds-v02_01-en.pdffileid5546d46249be182c0149c7.pdf Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
IPD60R2K1CEAUMA1 Hersteller : Infineon Infineon-IPD60R2K1CE-DS-v02_01-EN.pdf?fileId=5546d46249be182c0149c7e404601eaa
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)