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BSC093N15NS5ATMA1

BSC093N15NS5ATMA1 Infineon Technologies

Infineon_BSC093N15NS5_DataSheet_v02_04_EN-3006812.pdf Hersteller: Infineon Technologies
MOSFETs N
auf Bestellung 12694 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.77 EUR
10+ 4.68 EUR
25+ 4.63 EUR
100+ 3.33 EUR
500+ 2.73 EUR
1000+ 2.66 EUR
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Technische Details BSC093N15NS5ATMA1 Infineon Technologies

Description: MOSFET N-CH 150V 87A TDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 87A (Tc), Rds On (Max) @ Id, Vgs: 9.3mOhm @ 44A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 4.6V @ 107µA, Supplier Device Package: PG-TDSON-8-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V.

Weitere Produktangebote BSC093N15NS5ATMA1 nach Preis ab 2.46 EUR bis 6.85 EUR

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Preis ohne MwSt
BSC093N15NS5ATMA1 BSC093N15NS5ATMA1 Hersteller : Infineon Technologies Infineon-BSC093N15NS5-DS-v02_00-EN.pdf?fileId=5546d462503812bb01507033a3fa1175 Description: MOSFET N-CH 150V 87A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 44A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
auf Bestellung 4164 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.85 EUR
10+ 4.52 EUR
100+ 3.19 EUR
500+ 2.63 EUR
1000+ 2.46 EUR
Mindestbestellmenge: 3
BSC093N15NS5ATMA1 BSC093N15NS5ATMA1 Hersteller : INFINEON Infineon-BSC093N15NS5-DS-v02_00-EN.pdf?fileId=5546d462503812bb01507033a3fa1175 Description: INFINEON - BSC093N15NS5ATMA1 - Leistungs-MOSFET, n-Kanal, 150 V, 87 A, 0.0079 ohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 150V
rohsCompliant: YES
Dauer-Drainstrom Id: 87A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -888
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.8V
euEccn: NLR
Verlustleistung: 139W
Anzahl der Pins: 8Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0079ohm
auf Bestellung 33160 Stücke:
Lieferzeit 14-21 Tag (e)
BSC093N15NS5ATMA1 BSC093N15NS5ATMA1 Hersteller : Infineon Technologies infineon-bsc093n15ns5-datasheet-v02_03-en.pdf Trans MOSFET N-CH 150V 87A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSC093N15NS5ATMA1 BSC093N15NS5ATMA1 Hersteller : Infineon Technologies Infineon-BSC093N15NS5-DS-v02_00-EN.pdf?fileId=5546d462503812bb01507033a3fa1175 Description: MOSFET N-CH 150V 87A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 44A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 107µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
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