Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (140125) > Seite 257 nach 2336
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IPD12CN10NGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 67A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 67A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 83µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 50 V |
auf Bestellung 7178 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFH7885TRPBF | Infineon Technologies |
Description: MOSFET N-CH 80V 22A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-VQFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2311 pF @ 40 V |
Produkt ist nicht verfügbar |
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IRFH7882TRPBF | Infineon Technologies |
Description: MOSFET N-CH 80V 26A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-VQFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 4W (Ta), 195W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3186 pF @ 40 V |
Produkt ist nicht verfügbar |
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IRFH7885TRPBF | Infineon Technologies |
Description: MOSFET N-CH 80V 22A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-VQFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2311 pF @ 40 V |
Produkt ist nicht verfügbar |
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IPU60R2K0C6AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 2.4A TO251-3 Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V Power Dissipation (Max): 22.3W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: PG-TO251-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V |
Produkt ist nicht verfügbar |
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CY7C4122KV13-106FCXC | Infineon Technologies |
Description: IC SRAM 144MBIT PAR 361FCBGA Packaging: Tray Package / Case: 361-BBGA, FCBGA Mounting Type: Surface Mount Memory Size: 144Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.26V ~ 1.34V Technology: SRAM - Synchronous, QDR IV Clock Frequency: 1.066 GHz Memory Format: SRAM Supplier Device Package: 361-FCBGA (21x21) Memory Interface: Parallel Memory Organization: 8M x 18 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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TLE6244XAQMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 MQFP64 Packaging: Bulk Package / Case: 64-BQFP Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 18 Interface: SPI Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Voltage - Load: 4.5V ~ 5.5V Ratio - Input:Output: 1:1 Supplier Device Package: PG-MQFP-64-10 Fault Protection: Over Temperature, Over Voltage |
Produkt ist nicht verfügbar |
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XC2310S8F40RAAKXUMA1 | Infineon Technologies |
Description: IC MCU 16/32B 64KB FLASH 38TSSOP Packaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 8x12b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: EBI/EMI, I²C, LINbus, SPI, UART/USART Peripherals: DMA, I²S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-8 Part Status: Obsolete Number of I/O: 28 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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XE160FU8F66RAAFXUMA1 | Infineon Technologies | Description: IC MCU 16BIT 64KB FLASH 38TSSOP |
Produkt ist nicht verfügbar |
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XE160FU8F40RAAKXUMA1 | Infineon Technologies |
Description: IC MCU 16/32B 64KB FLASH 38TSSOP Packaging: Tape & Reel (TR) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 8x12b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: DMA, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-8 Number of I/O: 28 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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ICE3BS03LJGXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 8DSO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 130°C (TJ) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 26V Supplier Device Package: PG-DSO-8 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 18 V Part Status: Active |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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XC2268N40F80LRABKXUMA1 | Infineon Technologies | Description: IC MCU 32BIT 320KB FLASH 100LQFP |
Produkt ist nicht verfügbar |
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XC2365B40F80LRABKXUMA1 | Infineon Technologies |
Description: IC MCU 16/32B 320KB FLSH 100LQFP Packaging: Tape & Reel (TR) Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 34K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-8 Part Status: Not For New Designs Number of I/O: 76 DigiKey Programmable: Not Verified |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE62543GXUMA2 | Infineon Technologies |
Description: IC TRANSCEIVER FULL 1/1 DSO-14 Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 160°C Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 125KBd Protocol: CANbus Supplier Device Package: PG-DSO-14 Duplex: Full Part Status: Obsolete |
Produkt ist nicht verfügbar |
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TLE4284DV15NTMA1 | Infineon Technologies | Description: IC REG LINEAR 1.5V 1A TO252-3-11 |
Produkt ist nicht verfügbar |
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TLE7183FXUMA2 | Infineon Technologies | Description: IC MOTOR DRIVER 5.5V-20V 48VQFN |
Produkt ist nicht verfügbar |
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TLE7183FXUMA3 | Infineon Technologies | Description: IC MOTOR DRIVER 5.5V-20V 48VQFN |
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TLE7183FXUMA5 | Infineon Technologies | Description: IC MOTOR DRIVER 5.5V-20V 48VQFN |
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TLE7184F3VXUMA1 | Infineon Technologies | Description: IC MOTOR DRIVER 6V-45V 48VQFN |
Produkt ist nicht verfügbar |
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TLE7186FXUMA1 | Infineon Technologies | Description: IC MOTOR DRIVER 6V-45V 48VQFN |
Produkt ist nicht verfügbar |
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TLE4274GV10ATMA2 | Infineon Technologies |
Description: IC REG LIN 10V 400MA TO263-3-1 Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO263-3-1 Voltage - Output (Min/Fixed): 10V Grade: Automotive Part Status: Active PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA Qualification: AEC-Q100 |
auf Bestellung 499 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD50R3K0CEAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 1.7A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V |
auf Bestellung 27500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD50R3K0CEAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 500V 1.7A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V Power Dissipation (Max): 26W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 13V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V |
auf Bestellung 28024 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE42664GHTMA2 | Infineon Technologies |
Description: IC REG LINEAR 5V 100MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-SOT223-4 Voltage - Output (Min/Fixed): 5V Control Features: Enable Grade: Automotive PSRR: 68dB (100Hz) Voltage Dropout (Max): 0.5V @ 100mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 4 mA Qualification: AEC-Q100 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE42744GSV33HUMA1 | Infineon Technologies |
Description: IC REG LIN 3.3V 400MA SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 220 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-SOT223-4 Voltage - Output (Min/Fixed): 3.3V PSRR: 60dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 30 mA |
Produkt ist nicht verfügbar |
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ICE2QR0665GXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSO Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 50% Frequency - Switching: 52kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DSO-12-10 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 18 V Part Status: Active Power (Watts): 79 W |
Produkt ist nicht verfügbar |
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2EDL05I06BFXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE DSO8 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 48ns, 24ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 500mA, 500mA Part Status: Active DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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2EDL23I06PJXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE DSO14 Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 25V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: PG-DSO-14 Rise / Fall Time (Typ): 48ns, 37ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 2.3A, 2.3A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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ICE2QR0665GXUMA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 12DSO Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 50% Frequency - Switching: 52kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V Supplier Device Package: PG-DSO-12-10 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 18 V Part Status: Active Power (Watts): 79 W |
auf Bestellung 2397 Stücke: Lieferzeit 10-14 Tag (e) |
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2EDL05I06BFXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE DSO8 Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 48ns, 24ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 500mA, 500mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 2380 Stücke: Lieferzeit 10-14 Tag (e) |
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2EDL23I06PJXUMA1 | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE DSO14 Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 25V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: PG-DSO-14 Rise / Fall Time (Typ): 48ns, 37ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 2.3A, 2.3A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 11120 Stücke: Lieferzeit 10-14 Tag (e) |
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IKCM10H60GAXKMA1 | Infineon Technologies |
Description: MODULE IGBT 600V 10A 24PWRDIP Packaging: Tube Package / Case: 24-PowerDIP Module (1.028", 26.10mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Part Status: Active Current: 10 A Voltage: 600 V |
auf Bestellung 281 Stücke: Lieferzeit 10-14 Tag (e) |
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EVAL2QR0665G28W16VTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ICE2QR0665G Packaging: Bulk Voltage - Output: 16V Voltage - Input: 85 ~ 265 VAC Current - Output: 1.75A Frequency - Switching: 65kHz Regulator Topology: Flyback Board Type: Fully Populated Utilized IC / Part: ICE2QR0665G Supplied Contents: Board(s) Main Purpose: AC/DC, Primary Side Outputs and Type: 1, Isolated Part Status: Active Power - Output: 28 W |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD068N10N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 90A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 90A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD096N08N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 73A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 46A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 46µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD135N08N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 45A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 45A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 33µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPI030N10N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 100A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 275µA Supplier Device Package: PG-TO262-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V |
Produkt ist nicht verfügbar |
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IPI032N06N3GAKSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 120A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 118µA Supplier Device Package: PG-TO262-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
Produkt ist nicht verfügbar |
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IPI040N06N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 90A TO262-3 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO262-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD320N20N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 34A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD320N20N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 34A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V |
auf Bestellung 5631 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD530N15N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 21A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V |
Produkt ist nicht verfügbar |
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IPD530N15N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 21A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V |
auf Bestellung 2440 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD600N25N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 250V 25A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD600N25N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 250V 25A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V |
auf Bestellung 6386 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD122N10N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 59A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 46A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 46µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD122N10N3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 59A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 59A (Tc) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 46A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 46µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V |
auf Bestellung 43231 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE88881QKXUMA1 | Infineon Technologies | Description: IC PWR MGMT AUTOMOTIVE 100-LQFP |
Produkt ist nicht verfügbar |
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TLE92633QXXUMA2 | Infineon Technologies |
Description: IC INTERFACE SPECIALIZED 48VQFN Packaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Applications: Automotive Supplier Device Package: PG-VQFN-48-31 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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TLE84106ELXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 24SSOP Packaging: Tape & Reel (TR) Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (6) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 800mOhm LS, 800mOhm HS Applications: DC Motors, General Purpose Technology: DMOS Voltage - Load: 7V ~ 18V Supplier Device Package: PG-SSOP-24-4 Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO Load Type: Inductive |
Produkt ist nicht verfügbar |
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TLE84110ELXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 24SSOP Packaging: Tape & Reel (TR) Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (10) Voltage - Supply: 3V ~ 5.5V Rds On (Typ): 800mOhm LS, 800mOhm HS Applications: DC Motors, General Purpose Technology: DMOS Voltage - Load: 7V ~ 18V Supplier Device Package: PG-SSOP-24-4 Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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TLE7250LEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 TSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1Mbps Protocol: CANbus Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 100 mV Duplex: Half Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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TLE7250VLEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 TSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1Mbps Protocol: CANbus Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 100 mV Duplex: Half Part Status: Not For New Designs |
auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE7250XLEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER HALF 1/1 TSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Voltage - Supply: 4.75V ~ 5.25V Number of Drivers/Receivers: 1/1 Data Rate: 1Mbps Protocol: CANbus Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 100 mV Duplex: Half Part Status: Not For New Designs |
Produkt ist nicht verfügbar |
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TLE7251VLEXUMA1 | Infineon Technologies |
Description: IC TRANSCEIVER 1/1 TSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-TDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Type: Transceiver Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.5V ~ 5.5V Number of Drivers/Receivers: 1/1 Data Rate: 2Mbps Protocol: CANbus Supplier Device Package: PG-TSON-8-1 Receiver Hysteresis: 90 mV Grade: Automotive Part Status: Not For New Designs Qualification: AEC-Q100 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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TLS820F0ELV33XUMA1 | Infineon Technologies |
Description: IC REG LIN 3.3V 200MA SSOP-14-5 Packaging: Tape & Reel (TR) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 5 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-SSOP-14-5 Voltage - Output (Min/Fixed): 3.3V Control Features: Delay, Enable, Reset, Watchdog Grade: Automotive Part Status: Active PSRR: 63dB (100Hz) Voltage Dropout (Max): 0.35V @ 200mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 80 µA Qualification: AEC-Q100 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLS820F0ELV50XUMA1 | Infineon Technologies |
Description: IC REG LINEAR 5V 200MA SSOP-14 Packaging: Tape & Reel (TR) Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 5 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-SSOP-14-EP Voltage - Output (Min/Fixed): 5V Control Features: Delay, Enable, Reset, Watchdog Part Status: Active PSRR: 59dB (100Hz) Voltage Dropout (Max): 0.34V @ 200mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 80 µA |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLS203B0LDV50XUMA1 | Infineon Technologies | Description: IC REG LINEAR 5V 300MA TSON-10 |
Produkt ist nicht verfügbar |
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TLS203B0LDV33XUMA1 | Infineon Technologies | Description: IC REG LINEAR 3.3V 300MA TSON-10 |
Produkt ist nicht verfügbar |
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TLS203B0LDVXUMA1 | Infineon Technologies | Description: IC REG LDO ADJ 0.3A |
Produkt ist nicht verfügbar |
IPD12CN10NGATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 67A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 67A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 50 V
Description: MOSFET N-CH 100V 67A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 67A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 50 V
auf Bestellung 7178 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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5+ | 3.98 EUR |
10+ | 3.29 EUR |
100+ | 2.62 EUR |
500+ | 2.22 EUR |
1000+ | 1.88 EUR |
IRFH7885TRPBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2311 pF @ 40 V
Description: MOSFET N-CH 80V 22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2311 pF @ 40 V
Produkt ist nicht verfügbar
IRFH7882TRPBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 26A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 195W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3186 pF @ 40 V
Description: MOSFET N-CH 80V 26A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 195W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3186 pF @ 40 V
Produkt ist nicht verfügbar
IRFH7885TRPBF |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2311 pF @ 40 V
Description: MOSFET N-CH 80V 22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-VQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2311 pF @ 40 V
Produkt ist nicht verfügbar
IPU60R2K0C6AKMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 2.4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Description: MOSFET N-CH 600V 2.4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 760mA, 10V
Power Dissipation (Max): 22.3W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-TO251-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
Produkt ist nicht verfügbar
CY7C4122KV13-106FCXC |
Hersteller: Infineon Technologies
Description: IC SRAM 144MBIT PAR 361FCBGA
Packaging: Tray
Package / Case: 361-BBGA, FCBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.26V ~ 1.34V
Technology: SRAM - Synchronous, QDR IV
Clock Frequency: 1.066 GHz
Memory Format: SRAM
Supplier Device Package: 361-FCBGA (21x21)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 144MBIT PAR 361FCBGA
Packaging: Tray
Package / Case: 361-BBGA, FCBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.26V ~ 1.34V
Technology: SRAM - Synchronous, QDR IV
Clock Frequency: 1.066 GHz
Memory Format: SRAM
Supplier Device Package: 361-FCBGA (21x21)
Memory Interface: Parallel
Memory Organization: 8M x 18
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TLE6244XAQMA1 |
Hersteller: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 MQFP64
Packaging: Bulk
Package / Case: 64-BQFP Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 18
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Load: 4.5V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-MQFP-64-10
Fault Protection: Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:1 MQFP64
Packaging: Bulk
Package / Case: 64-BQFP Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 18
Interface: SPI
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Voltage - Load: 4.5V ~ 5.5V
Ratio - Input:Output: 1:1
Supplier Device Package: PG-MQFP-64-10
Fault Protection: Over Temperature, Over Voltage
Produkt ist nicht verfügbar
XC2310S8F40RAAKXUMA1 |
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 64KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-8
Part Status: Obsolete
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 64KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, SPI, UART/USART
Peripherals: DMA, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-8
Part Status: Obsolete
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
XE160FU8F66RAAFXUMA1 |
Hersteller: Infineon Technologies
Description: IC MCU 16BIT 64KB FLASH 38TSSOP
Description: IC MCU 16BIT 64KB FLASH 38TSSOP
Produkt ist nicht verfügbar
XE160FU8F40RAAKXUMA1 |
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 64KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-8
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 64KB FLASH 38TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 8x12b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-8
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
ICE3BS03LJGXUMA1 |
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 26V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 26V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.02 EUR |
XC2268N40F80LRABKXUMA1 |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 320KB FLASH 100LQFP
Description: IC MCU 32BIT 320KB FLASH 100LQFP
Produkt ist nicht verfügbar
XC2365B40F80LRABKXUMA1 |
Hersteller: Infineon Technologies
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Not For New Designs
Number of I/O: 76
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 320KB FLSH 100LQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Part Status: Not For New Designs
Number of I/O: 76
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 16.51 EUR |
TLE62543GXUMA2 |
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER FULL 1/1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 160°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 125KBd
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Duplex: Full
Part Status: Obsolete
Description: IC TRANSCEIVER FULL 1/1 DSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 160°C
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 125KBd
Protocol: CANbus
Supplier Device Package: PG-DSO-14
Duplex: Full
Part Status: Obsolete
Produkt ist nicht verfügbar
TLE4284DV15NTMA1 |
Hersteller: Infineon Technologies
Description: IC REG LINEAR 1.5V 1A TO252-3-11
Description: IC REG LINEAR 1.5V 1A TO252-3-11
Produkt ist nicht verfügbar
TLE7183FXUMA2 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
Produkt ist nicht verfügbar
TLE7183FXUMA3 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
Produkt ist nicht verfügbar
TLE7183FXUMA5 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
Description: IC MOTOR DRIVER 5.5V-20V 48VQFN
Produkt ist nicht verfügbar
TLE7184F3VXUMA1 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 6V-45V 48VQFN
Description: IC MOTOR DRIVER 6V-45V 48VQFN
Produkt ist nicht verfügbar
TLE7186FXUMA1 |
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 6V-45V 48VQFN
Description: IC MOTOR DRIVER 6V-45V 48VQFN
Produkt ist nicht verfügbar
TLE4274GV10ATMA2 |
Hersteller: Infineon Technologies
Description: IC REG LIN 10V 400MA TO263-3-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 10V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
Description: IC REG LIN 10V 400MA TO263-3-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-3-1
Voltage - Output (Min/Fixed): 10V
Grade: Automotive
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 499 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.45 EUR |
10+ | 3.1 EUR |
25+ | 2.92 EUR |
100+ | 2.49 EUR |
250+ | 2.34 EUR |
IPD50R3K0CEAUMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 1.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
Description: MOSFET N-CH 500V 1.7A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.29 EUR |
5000+ | 0.28 EUR |
12500+ | 0.26 EUR |
25000+ | 0.25 EUR |
IPD50R3K0CEAUMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 500V 1.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
Description: MOSFET N-CH 500V 1.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 400mA, 13V
Power Dissipation (Max): 26W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 84 pF @ 100 V
auf Bestellung 28024 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 0.86 EUR |
24+ | 0.74 EUR |
100+ | 0.51 EUR |
500+ | 0.4 EUR |
1000+ | 0.33 EUR |
TLE42664GHTMA2 |
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 100MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 100MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 5V
Control Features: Enable
Grade: Automotive
PSRR: 68dB (100Hz)
Voltage Dropout (Max): 0.5V @ 100mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 4 mA
Qualification: AEC-Q100
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 1.27 EUR |
8000+ | 1.23 EUR |
TLE42744GSV33HUMA1 |
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 400MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 3.3V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Description: IC REG LIN 3.3V 400MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SOT223-4
Voltage - Output (Min/Fixed): 3.3V
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 30 mA
Produkt ist nicht verfügbar
ICE2QR0665GXUMA1 |
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 79 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 79 W
Produkt ist nicht verfügbar
2EDL05I06BFXUMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE DSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
2EDL23I06PJXUMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-14
Rise / Fall Time (Typ): 48ns, 37ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.3A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE DSO14
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-14
Rise / Fall Time (Typ): 48ns, 37ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.3A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.61 EUR |
ICE2QR0665GXUMA1 |
Hersteller: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 79 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 50%
Frequency - Switching: 52kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.5V ~ 27V
Supplier Device Package: PG-DSO-12-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Part Status: Active
Power (Watts): 79 W
auf Bestellung 2397 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.37 EUR |
10+ | 3.89 EUR |
25+ | 3.52 EUR |
100+ | 3.11 EUR |
250+ | 2.92 EUR |
500+ | 2.8 EUR |
1000+ | 2.7 EUR |
2EDL05I06BFXUMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE DSO8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 48ns, 24ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 500mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2380 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.43 EUR |
10+ | 2.19 EUR |
25+ | 2.07 EUR |
100+ | 1.76 EUR |
250+ | 1.65 EUR |
500+ | 1.45 EUR |
1000+ | 1.2 EUR |
2EDL23I06PJXUMA1 |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-14
Rise / Fall Time (Typ): 48ns, 37ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.3A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE DSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: PG-DSO-14
Rise / Fall Time (Typ): 48ns, 37ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 2.3A, 2.3A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 11120 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.69 EUR |
10+ | 2.42 EUR |
25+ | 2.28 EUR |
100+ | 1.94 EUR |
250+ | 1.83 EUR |
500+ | 1.61 EUR |
IKCM10H60GAXKMA1 |
Hersteller: Infineon Technologies
Description: MODULE IGBT 600V 10A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
Description: MODULE IGBT 600V 10A 24PWRDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
auf Bestellung 281 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 16.49 EUR |
14+ | 14.9 EUR |
28+ | 14.21 EUR |
112+ | 12.34 EUR |
252+ | 11.78 EUR |
EVAL2QR0665G28W16VTOBO1 |
Hersteller: Infineon Technologies
Description: EVAL BOARD FOR ICE2QR0665G
Packaging: Bulk
Voltage - Output: 16V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 1.75A
Frequency - Switching: 65kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE2QR0665G
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 28 W
Description: EVAL BOARD FOR ICE2QR0665G
Packaging: Bulk
Voltage - Output: 16V
Voltage - Input: 85 ~ 265 VAC
Current - Output: 1.75A
Frequency - Switching: 65kHz
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ICE2QR0665G
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1, Isolated
Part Status: Active
Power - Output: 28 W
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 102.29 EUR |
IPD068N10N3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.47 EUR |
IPD096N08N3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 73A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 46A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
Description: MOSFET N-CH 80V 73A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 46A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 40 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.91 EUR |
IPD135N08N3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 45A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 45A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
Description: MOSFET N-CH 80V 45A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 45A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.72 EUR |
5000+ | 0.67 EUR |
IPI030N10N3GXKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
Description: MOSFET N-CH 100V 100A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 275µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14800 pF @ 50 V
Produkt ist nicht verfügbar
IPI032N06N3GAKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Description: MOSFET N-CH 60V 120A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 118µA
Supplier Device Package: PG-TO262-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Produkt ist nicht verfügbar
IPI040N06N3GXKSA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.73 EUR |
10+ | 2.56 EUR |
100+ | 1.83 EUR |
500+ | 1.52 EUR |
IPD320N20N3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 34A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Description: MOSFET N-CH 200V 34A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.98 EUR |
IPD320N20N3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 34A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Description: MOSFET N-CH 200V 34A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 34A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 5631 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.8 EUR |
10+ | 3.31 EUR |
100+ | 2.4 EUR |
500+ | 2 EUR |
1000+ | 1.98 EUR |
IPD530N15N3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 21A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V
Description: MOSFET N-CH 150V 21A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V
Produkt ist nicht verfügbar
IPD530N15N3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 21A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V
Description: MOSFET N-CH 150V 21A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 18A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 887 pF @ 75 V
auf Bestellung 2440 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.55 EUR |
10+ | 2.12 EUR |
100+ | 1.69 EUR |
500+ | 1.43 EUR |
1000+ | 1.21 EUR |
IPD600N25N3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 25A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Description: MOSFET N-CH 250V 25A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.81 EUR |
IPD600N25N3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 250V 25A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Description: MOSFET N-CH 250V 25A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
auf Bestellung 6386 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.49 EUR |
10+ | 3.09 EUR |
100+ | 2.23 EUR |
500+ | 1.86 EUR |
1000+ | 1.81 EUR |
IPD122N10N3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 59A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Description: MOSFET N-CH 100V 59A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.95 EUR |
IPD122N10N3GATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 59A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
Description: MOSFET N-CH 100V 59A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 46A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 46µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
auf Bestellung 43231 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.75 EUR |
10+ | 1.86 EUR |
100+ | 1.31 EUR |
500+ | 1.07 EUR |
1000+ | 0.99 EUR |
TLE88881QKXUMA1 |
Hersteller: Infineon Technologies
Description: IC PWR MGMT AUTOMOTIVE 100-LQFP
Description: IC PWR MGMT AUTOMOTIVE 100-LQFP
Produkt ist nicht verfügbar
TLE92633QXXUMA2 |
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Applications: Automotive
Supplier Device Package: PG-VQFN-48-31
Part Status: Obsolete
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Applications: Automotive
Supplier Device Package: PG-VQFN-48-31
Part Status: Obsolete
Produkt ist nicht verfügbar
TLE84106ELXUMA1 |
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 800mOhm LS, 800mOhm HS
Applications: DC Motors, General Purpose
Technology: DMOS
Voltage - Load: 7V ~ 18V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 800mOhm LS, 800mOhm HS
Applications: DC Motors, General Purpose
Technology: DMOS
Voltage - Load: 7V ~ 18V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
TLE84110ELXUMA1 |
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (10)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 800mOhm LS, 800mOhm HS
Applications: DC Motors, General Purpose
Technology: DMOS
Voltage - Load: 7V ~ 18V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
Description: IC HALF BRIDGE DRIVER 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (10)
Voltage - Supply: 3V ~ 5.5V
Rds On (Typ): 800mOhm LS, 800mOhm HS
Applications: DC Motors, General Purpose
Technology: DMOS
Voltage - Load: 7V ~ 18V
Supplier Device Package: PG-SSOP-24-4
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Not For New Designs
Produkt ist nicht verfügbar
TLE7250LEXUMA1 |
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
Description: IC TRANSCEIVER HALF 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
Produkt ist nicht verfügbar
TLE7250VLEXUMA1 |
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
Description: IC TRANSCEIVER HALF 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 1.86 EUR |
TLE7250XLEXUMA1 |
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER HALF 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
Description: IC TRANSCEIVER HALF 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Voltage - Supply: 4.75V ~ 5.25V
Number of Drivers/Receivers: 1/1
Data Rate: 1Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 100 mV
Duplex: Half
Part Status: Not For New Designs
Produkt ist nicht verfügbar
TLE7251VLEXUMA1 |
Hersteller: Infineon Technologies
Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 2Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 90 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
Description: IC TRANSCEIVER 1/1 TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-TDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 2Mbps
Protocol: CANbus
Supplier Device Package: PG-TSON-8-1
Receiver Hysteresis: 90 mV
Grade: Automotive
Part Status: Not For New Designs
Qualification: AEC-Q100
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 1.78 EUR |
TLS820F0ELV33XUMA1 |
Hersteller: Infineon Technologies
Description: IC REG LIN 3.3V 200MA SSOP-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Delay, Enable, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.35V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Qualification: AEC-Q100
Description: IC REG LIN 3.3V 200MA SSOP-14-5
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Delay, Enable, Reset, Watchdog
Grade: Automotive
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.35V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.68 EUR |
TLS820F0ELV50XUMA1 |
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 200MA SSOP-14
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Enable, Reset, Watchdog
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.34V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
Description: IC REG LINEAR 5V 200MA SSOP-14
Packaging: Tape & Reel (TR)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-SSOP-14-EP
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Enable, Reset, Watchdog
Part Status: Active
PSRR: 59dB (100Hz)
Voltage Dropout (Max): 0.34V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 80 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.69 EUR |
TLS203B0LDV50XUMA1 |
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 300MA TSON-10
Description: IC REG LINEAR 5V 300MA TSON-10
Produkt ist nicht verfügbar
TLS203B0LDV33XUMA1 |
Hersteller: Infineon Technologies
Description: IC REG LINEAR 3.3V 300MA TSON-10
Description: IC REG LINEAR 3.3V 300MA TSON-10
Produkt ist nicht verfügbar
TLS203B0LDVXUMA1 |
Hersteller: Infineon Technologies
Description: IC REG LDO ADJ 0.3A
Description: IC REG LDO ADJ 0.3A
Produkt ist nicht verfügbar