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IPAW60R280CEXKSA1

IPAW60R280CEXKSA1 Infineon Technologies

Infineon-IPAW60R280CE-DS-v02_01-EN.pdf?fileId=5546d46253f65057015418cb38a34e0d Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 19.3A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack, Variant
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220 Full Pack, Wide Creepage
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 3606 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
337+1.44 EUR
Mindestbestellmenge: 337
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Technische Details IPAW60R280CEXKSA1 Infineon Technologies

Description: MOSFET N-CH 600V 19.3A TO220, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Variant, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V, Power Dissipation (Max): 32W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 430µA, Supplier Device Package: PG-TO220 Full Pack, Wide Creepage, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V.

Weitere Produktangebote IPAW60R280CEXKSA1 nach Preis ab 1.85 EUR bis 3.63 EUR

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IPAW60R280CEXKSA1 IPAW60R280CEXKSA1 Hersteller : Infineon Technologies Infineon-IPAW60R280CE-DS-v02_01-EN-1226877.pdf MOSFET CONSUMER
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.63 EUR
10+ 3.26 EUR
100+ 2.62 EUR
450+ 2.18 EUR
2700+ 1.85 EUR
IPAW60R280CEXKSA1 IPAW60R280CEXKSA1 Hersteller : INFINEON INFN-S-A0002362746-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: INFINEON - IPAW60R280CEXKSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 19.3 A, 0.25 ohm, TO-220FP, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600
Dauer-Drainstrom Id: 19.3
Qualifikation: -
Verlustleistung Pd: 32
Gate-Source-Schwellenspannung, max.: 3
Verlustleistung: 32
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3
Produktpalette: CoolMOS CE
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.25
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 150
Drain-Source-Durchgangswiderstand: 0.25
SVHC: No SVHC (08-Jul-2021)
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
IPAW60R280CEXKSA1 IPAW60R280CEXKSA1 Hersteller : Infineon Technologies Infineon-IPAW60R280CE-DS-v02_01-EN.pdf?fileId=5546d46253f65057015418cb38a34e0d Description: MOSFET N-CH 600V 19.3A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Variant
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.3A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220 Full Pack, Wide Creepage
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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