Technische Details IPD70R2K0CEAUMA1 Infineon Technologies
Description: MOSFET N-CH 700V 4A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 70µA, Supplier Device Package: PG-TO252-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 700 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 100 V.
Weitere Produktangebote IPD70R2K0CEAUMA1
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IPD70R2K0CEAUMA1 | Hersteller : ROCHESTER ELECTRONICS |
 Description: ROCHESTER ELECTRONICS - IPD70R2K0CEAUMA1 - IPD70R2K0 650V AND 700V COOLMOS N-CHANNtariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 1940 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD70R2K0CEAUMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 700V 4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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IPD70R2K0CEAUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.6A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 7.8nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IPD70R2K0CEAUMA1 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 700V 4A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 70µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 100 V |
Produkt ist nicht verfügbar |
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IPD70R2K0CEAUMA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 700V; 2.6A; 42W; PG-TO252-3 Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 700V Drain current: 2.6A Power dissipation: 42W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 7.8nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |