Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10970) > Seite 48 nach 183
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SI7540DP-T1-GE3 | Vishay Siliconix |
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SI7818DN-T1-GE3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V |
auf Bestellung 5709 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7820DN-T1-GE3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V |
auf Bestellung 11930 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7842DP-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 6.3A PPAK SO8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.3A Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual Part Status: Obsolete |
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SI7844DP-T1-GE3 | Vishay Siliconix |
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SI7858ADP-T1-GE3 | Vishay Siliconix |
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auf Bestellung 2959 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7892BDP-T1-GE3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V |
auf Bestellung 1581 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7898DP-T1-GE3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V |
auf Bestellung 12851 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7922DN-T1-GE3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® 1212-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.8A Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8 Dual Part Status: Active |
auf Bestellung 42035 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7942DP-T1-GE3 | Vishay Siliconix |
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auf Bestellung 4991 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7945DP-T1-GE3 | Vishay Siliconix |
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SI7958DP-T1-GE3 | Vishay Siliconix |
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SI7960DP-T1-GE3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Dual |
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SIA411DJ-T1-GE3 | Vishay Siliconix |
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SIA914DJ-T1-GE3 | Vishay Siliconix |
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SIB911DK-T1-GE3 | Vishay Siliconix |
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SI1065X-T1-GE3 | Vishay Siliconix |
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SI4378DY-T1-GE3 | Vishay Siliconix |
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auf Bestellung 6620 Stücke: Lieferzeit 10-14 Tag (e) |
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SI5435BDC-T1-GE3 | Vishay Siliconix |
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SI5447DC-T1-GE3 | Vishay Siliconix |
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SI6433BDQ-T1-GE3 | Vishay Siliconix |
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SI6459BDQ-T1-GE3 | Vishay Siliconix |
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SI6463BDQ-T1-GE3 | Vishay Siliconix |
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SI7107DN-T1-GE3 | Vishay Siliconix |
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SI7114DN-T1-GE3 | Vishay Siliconix |
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SI7366DP-T1-GE3 | Vishay Siliconix |
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SI7958DP-T1-GE3 | Vishay Siliconix |
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SIA411DJ-T1-GE3 | Vishay Siliconix |
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SIA914DJ-T1-GE3 | Vishay Siliconix |
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SUB75P03-07-E3 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V |
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SIHP18N50C-E3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V |
auf Bestellung 532 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG20N50C-E3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V |
auf Bestellung 5283 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP22N60S-E3 | Vishay Siliconix |
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SIHG22N60S-E3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5620 pF @ 25 V |
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DG2522DN-T1-E4 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.1Ohm -3db Bandwidth: 105MHz Supplier Device Package: 8-miniQFN (1.4x1.4) Voltage - Supply, Single (V+): 1.6V ~ 5.5V Charge Injection: 27pC Crosstalk: -64dB @ 1MHz Switch Circuit: SP3T Multiplexer/Demultiplexer Circuit: 3:1 Channel-to-Channel Matching (ΔRon): 100mOhm (Max) Switch Time (Ton, Toff) (Max): 75ns, 60ns Channel Capacitance (CS(off), CD(off)): 51pF Current - Leakage (IS(off)) (Max): 20nA Part Status: Obsolete Number of Circuits: 1 |
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DG2706DN-T1-E4 | Vishay Siliconix |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DG2714DL-T1-E3 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.2Ohm Supplier Device Package: SC-70-6 Voltage - Supply, Single (V+): 1.5V ~ 3.6V Charge Injection: 9pC Crosstalk: -64dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 60mOhm (Max) Switch Time (Ton, Toff) (Max): 51ns, 33ns Channel Capacitance (CS(off), CD(off)): 30pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 1 |
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DG2720DN-T1-E4 | Vishay Siliconix |
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DG2722DN-T1-E4 | Vishay Siliconix |
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DG2727DN-T1-E4 | Vishay Siliconix |
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DG2735DN-T1-E4 | Vishay Siliconix |
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DG2737DN-T1-E4 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 8Ohm -3db Bandwidth: 720MHz Supplier Device Package: 8-miniQFN (1.4x1.4) Voltage - Supply, Single (V+): 2.3V ~ 4.3V Charge Injection: 10.4pC Crosstalk: -109dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 100mOhm Switch Time (Ton, Toff) (Max): 60ns, 50ns Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 1 |
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DG2738DN-T1-E4 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 8Ohm -3db Bandwidth: 720MHz Supplier Device Package: 8-miniQFN (1.4x1.4) Voltage - Supply, Single (V+): 2.3V ~ 4.3V Charge Injection: 10.4pC Crosstalk: -109dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 100mOhm Switch Time (Ton, Toff) (Max): 60ns, 50ns Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 2 |
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DG2739DN-T1-E4 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 8Ohm -3db Bandwidth: 720MHz Supplier Device Package: 8-miniQFN (1.4x1.4) Voltage - Supply, Single (V+): 2.3V ~ 4.3V Charge Injection: 10.4pC Crosstalk: -109dB @ 1MHz Switch Circuit: SPST - NO/NC Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 100mOhm Switch Time (Ton, Toff) (Max): 60ns, 50ns Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF Current - Leakage (IS(off)) (Max): 10nA Number of Circuits: 2 |
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DG2788DN-T1-E4 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 500mOhm Supplier Device Package: 16-miniQFN (1.8x2.6) Voltage - Supply, Single (V+): 1.65V ~ 4.3V Charge Injection: 87pC Crosstalk: -96dB @ 1MHz Switch Circuit: DPDT Multiplexer/Demultiplexer Circuit: 2:2 Channel-to-Channel Matching (ΔRon): 50mOhm Switch Time (Ton, Toff) (Max): 72ns, 43ns Channel Capacitance (CS(off), CD(off)): 81pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 2 |
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DG3157ADN-T1-E4 | Vishay Siliconix |
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DG3157BDN-T1-E4 | Vishay Siliconix |
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DG3516DB-T5-E1 | Vishay Siliconix |
Description: IC SW SPDTX2 2.9OHM 10MICRO FOOT Packaging: Tape & Reel (TR) Package / Case: 10-WFBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 2.9Ohm -3db Bandwidth: 300MHz Supplier Device Package: 10-Micro Foot® (2x1.5) Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: 1pC Crosstalk: -78dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 250mOhm (Max) Switch Time (Ton, Toff) (Max): 45ns, 42ns Channel Capacitance (CS(off), CD(off)): 12pF Current - Leakage (IS(off)) (Max): 2nA Part Status: Obsolete Number of Circuits: 2 |
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DG4051AEN-T1-E4 | Vishay Siliconix |
Description: IC MUX 8:1 100OHM 16MINIQFN Packaging: Tape & Reel (TR) Package / Case: 16-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 100Ohm -3db Bandwidth: 330MHz Supplier Device Package: 16-miniQFN (1.8x2.6) Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±2.5V ~ 5V Charge Injection: 0.25pC Crosstalk: -67dB @ 10MHz Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 3Ohm Switch Time (Ton, Toff) (Max): 108ns, 92ns Channel Capacitance (CS(off), CD(off)): 3pF, 12pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 1 |
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DG4052AEN-T1-E4 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 100Ohm -3db Bandwidth: 450MHz Supplier Device Package: 16-miniQFN (1.8x2.6) Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±2.5V ~ 5V Charge Injection: 0.25pC Crosstalk: -67dB @ 10MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 3Ohm Switch Time (Ton, Toff) (Max): 108ns, 92ns Channel Capacitance (CS(off), CD(off)): 3pF, 7pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 2 |
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DG4053AEN-T1-E4 | Vishay Siliconix |
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DG411DJ-E3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 35Ohm Supplier Device Package: 16-PDIP Voltage - Supply, Single (V+): 5V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 5pC Crosstalk: -85dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 175ns, 145ns Channel Capacitance (CS(off), CD(off)): 9pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Active Number of Circuits: 4 |
auf Bestellung 476 Stücke: Lieferzeit 10-14 Tag (e) |
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DG411DY-E3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 35Ohm Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 5V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 5pC Crosstalk: -85dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 175ns, 145ns Channel Capacitance (CS(off), CD(off)): 9pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Active Number of Circuits: 4 |
auf Bestellung 1796 Stücke: Lieferzeit 10-14 Tag (e) |
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DG411DY-T1 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 35Ohm Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 5V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 5pC Crosstalk: -85dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 175ns, 145ns Channel Capacitance (CS(off), CD(off)): 9pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Obsolete Number of Circuits: 4 |
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DG411HSDJ-E3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 35Ohm Supplier Device Package: 16-PDIP Voltage - Supply, Single (V+): 13V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 22pC Crosstalk: -88dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 105ns, 80ns Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 250pA Number of Circuits: 4 |
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DG411HSDN-T1-E4 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 35Ohm Supplier Device Package: 16-QFN (4x4) Voltage - Supply, Single (V+): 13V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 22pC Crosstalk: -88dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 105ns, 80ns Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Active Number of Circuits: 4 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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DG411HSDY-E3 | Vishay Siliconix |
![]() Packaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 35Ohm Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 13V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 22pC Crosstalk: -88dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 105ns, 80ns Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 250pA Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DG411HSDY-T1 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 35Ohm Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 13V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 22pC Crosstalk: -88dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 105ns, 80ns Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Obsolete Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DG411HSDY-T1-E3 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 35Ohm Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 13V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 22pC Crosstalk: -88dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 105ns, 80ns Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Active Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DG411LDJ-E3 | Vishay Siliconix |
![]() Packaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 17Ohm -3db Bandwidth: 280MHz Supplier Device Package: 16-PDIP Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±3V ~ 6V Charge Injection: 5pC Crosstalk: -95dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 19ns, 12ns Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Current - Leakage (IS(off)) (Max): 250pA Number of Circuits: 4 |
Produkt ist nicht verfügbar |
SI7540DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Description: MOSFET N/P-CH 12V 7.6A PPAK SO-8
Produkt ist nicht verfügbar
SI7818DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Description: MOSFET N-CH 150V 2.2A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 3.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
auf Bestellung 5709 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.57 EUR |
10+ | 2.1 EUR |
100+ | 1.63 EUR |
500+ | 1.38 EUR |
1000+ | 1.13 EUR |
SI7820DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Description: MOSFET N-CH 200V 1.7A PPAK1212-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
auf Bestellung 11930 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.39 EUR |
10+ | 1.99 EUR |
100+ | 1.59 EUR |
500+ | 1.34 EUR |
1000+ | 1.14 EUR |
SI7842DP-T1-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.3A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Obsolete
Description: MOSFET 2N-CH 30V 6.3A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Part Status: Obsolete
Produkt ist nicht verfügbar
SI7844DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 6.4A PPAK SO-8
Description: MOSFET 2N-CH 30V 6.4A PPAK SO-8
Produkt ist nicht verfügbar
SI7858ADP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 20A PPAK SO-8
Description: MOSFET N-CH 12V 20A PPAK SO-8
auf Bestellung 2959 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.14 EUR |
10+ | 4.61 EUR |
100+ | 3.71 EUR |
500+ | 3.05 EUR |
1000+ | 2.61 EUR |
SI7892BDP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
Description: MOSFET N-CH 30V 15A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
auf Bestellung 1581 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 2.97 EUR |
10+ | 2.47 EUR |
100+ | 1.96 EUR |
500+ | 1.66 EUR |
1000+ | 1.41 EUR |
SI7898DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Description: MOSFET N-CH 150V 3A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 3.5A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
auf Bestellung 12851 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.48 EUR |
10+ | 2.88 EUR |
100+ | 2.3 EUR |
500+ | 1.94 EUR |
1000+ | 1.65 EUR |
SI7922DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
Description: MOSFET 2N-CH 100V 1.8A PPAK 1212
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.8A
Rds On (Max) @ Id, Vgs: 195mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8 Dual
Part Status: Active
auf Bestellung 42035 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 2.75 EUR |
10+ | 2.27 EUR |
100+ | 1.81 EUR |
500+ | 1.53 EUR |
1000+ | 1.3 EUR |
SI7942DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 100V 3.8A PPAK SO-8
Description: MOSFET 2N-CH 100V 3.8A PPAK SO-8
auf Bestellung 4991 Stücke:
Lieferzeit 10-14 Tag (e)SI7945DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 30V 7A PPAK SO-8
Description: MOSFET 2P-CH 30V 7A PPAK SO-8
Produkt ist nicht verfügbar
SI7958DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Produkt ist nicht verfügbar
SI7960DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Description: MOSFET 2N-CH 60V 6.2A PPAK SO8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8 Dual
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 21mOhm @ 9.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8 Dual
Produkt ist nicht verfügbar
SIA411DJ-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Description: MOSFET P-CH 20V 12A SC70-6
Produkt ist nicht verfügbar
SIA914DJ-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6
Description: MOSFET 2N-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIB911DK-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 2.6A SC75-6
Description: MOSFET 2P-CH 20V 2.6A SC75-6
Produkt ist nicht verfügbar
SI1065X-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 1.18A SC89-6
Description: MOSFET P-CH 12V 1.18A SC89-6
Produkt ist nicht verfügbar
SI4378DY-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
Description: MOSFET N-CH 20V 19A 8-SOIC
auf Bestellung 6620 Stücke:
Lieferzeit 10-14 Tag (e)SI5435BDC-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.3A 1206-8
Description: MOSFET P-CH 30V 4.3A 1206-8
Produkt ist nicht verfügbar
SI5447DC-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.5A 1206-8
Description: MOSFET P-CH 20V 3.5A 1206-8
Produkt ist nicht verfügbar
SI6433BDQ-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 4A 8-TSSOP
Description: MOSFET P-CH 12V 4A 8-TSSOP
Produkt ist nicht verfügbar
SI6459BDQ-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 2.2A 8-TSSOP
Description: MOSFET P-CH 60V 2.2A 8-TSSOP
Produkt ist nicht verfügbar
SI6463BDQ-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Description: MOSFET P-CH 20V 6.2A 8-TSSOP
Produkt ist nicht verfügbar
SI7107DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 9.8A 1212-8
Description: MOSFET P-CH 20V 9.8A 1212-8
Produkt ist nicht verfügbar
SI7114DN-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11.7A 1212-8
Description: MOSFET N-CH 30V 11.7A 1212-8
Produkt ist nicht verfügbar
SI7366DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13A PPAK SO-8
Description: MOSFET N-CH 20V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7958DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Description: MOSFET 2N-CH 40V 7.2A PPAK SO-8
Produkt ist nicht verfügbar
SIA411DJ-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Description: MOSFET P-CH 20V 12A SC70-6
Produkt ist nicht verfügbar
SIA914DJ-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 4.5A SC70-6
Description: MOSFET 2N-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SUB75P03-07-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 75A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Description: MOSFET P-CH 30V 75A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.75W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Produkt ist nicht verfügbar
SIHP18N50C-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
Description: MOSFET N-CH 500V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 223W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
auf Bestellung 532 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.44 EUR |
50+ | 3.57 EUR |
100+ | 2.93 EUR |
500+ | 2.48 EUR |
SIHG20N50C-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 10A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2942 pF @ 25 V
auf Bestellung 5283 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.73 EUR |
25+ | 3.74 EUR |
100+ | 3.21 EUR |
500+ | 2.85 EUR |
1000+ | 2.44 EUR |
2000+ | 2.3 EUR |
5000+ | 2.21 EUR |
SIHP22N60S-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 22A TO220AB
Description: MOSFET N-CH 600V 22A TO220AB
Produkt ist nicht verfügbar
SIHG22N60S-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 22A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5620 pF @ 25 V
Description: MOSFET N-CH 600V 22A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5620 pF @ 25 V
Produkt ist nicht verfügbar
DG2522DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SP3TX1 1.1OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.1Ohm
-3db Bandwidth: 105MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 1.6V ~ 5.5V
Charge Injection: 27pC
Crosstalk: -64dB @ 1MHz
Switch Circuit: SP3T
Multiplexer/Demultiplexer Circuit: 3:1
Channel-to-Channel Matching (ΔRon): 100mOhm (Max)
Switch Time (Ton, Toff) (Max): 75ns, 60ns
Channel Capacitance (CS(off), CD(off)): 51pF
Current - Leakage (IS(off)) (Max): 20nA
Part Status: Obsolete
Number of Circuits: 1
Description: IC SWITCH SP3TX1 1.1OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.1Ohm
-3db Bandwidth: 105MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 1.6V ~ 5.5V
Charge Injection: 27pC
Crosstalk: -64dB @ 1MHz
Switch Circuit: SP3T
Multiplexer/Demultiplexer Circuit: 3:1
Channel-to-Channel Matching (ΔRon): 100mOhm (Max)
Switch Time (Ton, Toff) (Max): 75ns, 60ns
Channel Capacitance (CS(off), CD(off)): 51pF
Current - Leakage (IS(off)) (Max): 20nA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
DG2706DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPDT 16-MINIQFN
Description: IC SWITCH QUAD SPDT 16-MINIQFN
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)DG2714DL-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 1.2OHM SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.5V ~ 3.6V
Charge Injection: 9pC
Crosstalk: -64dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm (Max)
Switch Time (Ton, Toff) (Max): 51ns, 33ns
Channel Capacitance (CS(off), CD(off)): 30pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 1.2OHM SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.5V ~ 3.6V
Charge Injection: 9pC
Crosstalk: -64dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 60mOhm (Max)
Switch Time (Ton, Toff) (Max): 51ns, 33ns
Channel Capacitance (CS(off), CD(off)): 30pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Produkt ist nicht verfügbar
DG2720DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Produkt ist nicht verfügbar
DG2722DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Produkt ist nicht verfügbar
DG2727DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWTICH DUAL SPST 8-MINIQFN
Description: IC SWTICH DUAL SPST 8-MINIQFN
Produkt ist nicht verfügbar
DG2735DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPDT 500MOHM MINIQFN
Description: IC SWITCH 2XSPDT 500MOHM MINIQFN
Produkt ist nicht verfügbar
DG2737DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 8OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Charge Injection: 10.4pC
Crosstalk: -109dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 8OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Charge Injection: 10.4pC
Crosstalk: -109dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 1
Produkt ist nicht verfügbar
DG2738DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SW SPST-NCX2 8OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Charge Injection: 10.4pC
Crosstalk: -109dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Description: IC SW SPST-NCX2 8OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Charge Injection: 10.4pC
Crosstalk: -109dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG2739DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX2 8OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Charge Injection: 10.4pC
Crosstalk: -109dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Description: IC SW SPST-NO/NCX2 8OHM 8MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 8Ohm
-3db Bandwidth: 720MHz
Supplier Device Package: 8-miniQFN (1.4x1.4)
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Charge Injection: 10.4pC
Crosstalk: -109dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 100mOhm
Switch Time (Ton, Toff) (Max): 60ns, 50ns
Channel Capacitance (CS(off), CD(off)): 4.4pF, 3.8pF
Current - Leakage (IS(off)) (Max): 10nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG2788DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SW DPDTX2 500MOHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 87pC
Crosstalk: -96dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm
Switch Time (Ton, Toff) (Max): 72ns, 43ns
Channel Capacitance (CS(off), CD(off)): 81pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Description: IC SW DPDTX2 500MOHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 500mOhm
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 87pC
Crosstalk: -96dB @ 1MHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 50mOhm
Switch Time (Ton, Toff) (Max): 72ns, 43ns
Channel Capacitance (CS(off), CD(off)): 81pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG3157ADN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT 300MHZ 6-MINIQFN
Description: IC SWITCH SPDT 300MHZ 6-MINIQFN
Produkt ist nicht verfügbar
DG3157BDN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT 300MHZ 6-MINIQFN
Description: IC SWITCH SPDT 300MHZ 6-MINIQFN
Produkt ist nicht verfügbar
DG3516DB-T5-E1 |
Hersteller: Vishay Siliconix
Description: IC SW SPDTX2 2.9OHM 10MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 2.9Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: 10-Micro Foot® (2x1.5)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 1pC
Crosstalk: -78dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm (Max)
Switch Time (Ton, Toff) (Max): 45ns, 42ns
Channel Capacitance (CS(off), CD(off)): 12pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Obsolete
Number of Circuits: 2
Description: IC SW SPDTX2 2.9OHM 10MICRO FOOT
Packaging: Tape & Reel (TR)
Package / Case: 10-WFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 2.9Ohm
-3db Bandwidth: 300MHz
Supplier Device Package: 10-Micro Foot® (2x1.5)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 1pC
Crosstalk: -78dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 250mOhm (Max)
Switch Time (Ton, Toff) (Max): 45ns, 42ns
Channel Capacitance (CS(off), CD(off)): 12pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
DG4051AEN-T1-E4 |
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 100OHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.5V ~ 5V
Charge Injection: 0.25pC
Crosstalk: -67dB @ 10MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 108ns, 92ns
Channel Capacitance (CS(off), CD(off)): 3pF, 12pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Description: IC MUX 8:1 100OHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.5V ~ 5V
Charge Injection: 0.25pC
Crosstalk: -67dB @ 10MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 108ns, 92ns
Channel Capacitance (CS(off), CD(off)): 3pF, 12pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Produkt ist nicht verfügbar
DG4052AEN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SW SP4TX2 100OHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 450MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.5V ~ 5V
Charge Injection: 0.25pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 108ns, 92ns
Channel Capacitance (CS(off), CD(off)): 3pF, 7pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Description: IC SW SP4TX2 100OHM 16MINIQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 450MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.5V ~ 5V
Charge Injection: 0.25pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 108ns, 92ns
Channel Capacitance (CS(off), CD(off)): 3pF, 7pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG4053AEN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC MUX TRIPLE 2CHAN 16-MINIQFN
Description: IC MUX TRIPLE 2CHAN 16-MINIQFN
Produkt ist nicht verfügbar
DG411DJ-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 35OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
Description: IC SWITCH SPST-NCX4 35OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 476 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.47 EUR |
10+ | 4.02 EUR |
25+ | 3.8 EUR |
100+ | 3.29 EUR |
250+ | 3.12 EUR |
DG411DY-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 1796 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.87 EUR |
10+ | 3.48 EUR |
50+ | 3.28 EUR |
100+ | 2.8 EUR |
250+ | 2.63 EUR |
500+ | 2.3 EUR |
1000+ | 1.9 EUR |
DG411DY-T1 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
DG411HSDJ-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 35OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
Description: IC SWITCH SPST-NCX4 35OHM 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
Produkt ist nicht verfügbar
DG411HSDN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 35OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
Description: IC SWITCH SPST-NCX4 35OHM 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 3.75 EUR |
DG411HSDY-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
Produkt ist nicht verfügbar
DG411HSDY-T1 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
DG411HSDY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
Produkt ist nicht verfügbar
DG411LDJ-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 17OHM 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
Description: IC SWITCH SPST-NCX4 17OHM 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-PDIP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
Produkt ist nicht verfügbar