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SI4409DY-T1-E3 SI4409DY-T1-E3 Vishay Siliconix si4409dy.pdf Description: MOSFET P-CH 150V 1.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 50 V
Produkt ist nicht verfügbar
SI4410BDY-T1-E3 SI4410BDY-T1-E3 Vishay Siliconix 72211.pdf Description: MOSFET N-CH 30V 7.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Produkt ist nicht verfügbar
SI4411DY-T1-E3 SI4411DY-T1-E3 Vishay Siliconix Description: MOSFET P-CH 30V 9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Produkt ist nicht verfügbar
SI4411DY-T1-GE3 SI4411DY-T1-GE3 Vishay Siliconix Description: MOSFET P-CH 30V 9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Produkt ist nicht verfügbar
Si4412ADY-T1-E3 Si4412ADY-T1-E3 Vishay Siliconix 71105.pdf Description: MOSFET N-CH 30V 5.8A 8-SOIC
Produkt ist nicht verfügbar
SI4412ADY-T1-GE3 SI4412ADY-T1-GE3 Vishay Siliconix 71105.pdf Description: MOSFET N-CH 30V 5.8A 8-SOIC
Produkt ist nicht verfügbar
SI4413ADY-T1-GE3 SI4413ADY-T1-GE3 Vishay Siliconix si4413ad.pdf Description: MOSFET P-CH 30V 10.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Produkt ist nicht verfügbar
SI4421DY-T1-GE3 SI4421DY-T1-GE3 Vishay Siliconix si4421dy.pdf Description: MOSFET P-CH 20V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 850µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.64 EUR
Mindestbestellmenge: 2500
SI4423DY-T1-GE3 SI4423DY-T1-GE3 Vishay Siliconix si4423dy.pdf Description: MOSFET P-CH 20V 10A 8-SOIC
Produkt ist nicht verfügbar
SI4425BDY-T1-GE3 SI4425BDY-T1-GE3 Vishay Siliconix si4425bd.pdf Description: MOSFET P-CH 30V 8.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.38 EUR
Mindestbestellmenge: 2500
SI4425DDY-T1-GE3 SI4425DDY-T1-GE3 Vishay Siliconix si4425ddy.pdf Description: MOSFET P-CH 30V 19.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.54 EUR
5000+ 0.51 EUR
12500+ 0.48 EUR
25000+ 0.47 EUR
Mindestbestellmenge: 2500
SI4426DY-T1-GE3 SI4426DY-T1-GE3 Vishay Siliconix si4426dy.pdf Description: MOSFET N-CH 20V 6.5A 8SO
Produkt ist nicht verfügbar
SI4427BDY-T1-GE3 SI4427BDY-T1-GE3 Vishay Siliconix si4427bd.pdf Description: MOSFET P-CH 30V 9.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Produkt ist nicht verfügbar
SI4431CDY-T1-E3 SI4431CDY-T1-E3 Vishay Siliconix si4431cd.pdf Description: MOSFET P-CH 30V 9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1006 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.7 EUR
5000+ 0.67 EUR
Mindestbestellmenge: 2500
SI4435DDY-T1-E3 SI4435DDY-T1-E3 Vishay Siliconix si4435ddy.pdf Description: MOSFET P-CH 30V 11.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.45 EUR
5000+ 0.43 EUR
12500+ 0.39 EUR
Mindestbestellmenge: 2500
SI4438DY-T1-E3 SI4438DY-T1-E3 Vishay Siliconix Description: MOSFET N-CH 30V 36A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4645 pF @ 15 V
Produkt ist nicht verfügbar
SI4438DY-T1-GE3 SI4438DY-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 30V 36A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4645 pF @ 15 V
Produkt ist nicht verfügbar
SI4442DY-T1-GE3 SI4442DY-T1-GE3 Vishay Siliconix si4442dy.pdf Description: MOSFET N-CH 30V 15A 8SO
Produkt ist nicht verfügbar
SI4448DY-T1-GE3 SI4448DY-T1-GE3 Vishay Siliconix si4448dy.pdf Description: MOSFET N-CH 12V 50A 8-SOIC
Produkt ist nicht verfügbar
SI4451DY-T1-E3 SI4451DY-T1-E3 Vishay Siliconix 72115.pdf Description: MOSFET P-CH 12V 10A 8-SOIC
Produkt ist nicht verfügbar
SI4451DY-T1-GE3 SI4451DY-T1-GE3 Vishay Siliconix 72115.pdf Description: MOSFET P-CH 12V 10A 8-SOIC
Produkt ist nicht verfügbar
SI4453DY-T1-E3 SI4453DY-T1-E3 Vishay Siliconix 72175.pdf Description: MOSFET P-CH 12V 10A 8-SOIC
Produkt ist nicht verfügbar
SI4453DY-T1-GE3 SI4453DY-T1-GE3 Vishay Siliconix 72175.pdf Description: MOSFET P-CH 12V 10A 8-SOIC
Produkt ist nicht verfügbar
SI4456DY-T1-GE3 SI4456DY-T1-GE3 Vishay Siliconix 73852.pdf Description: MOSFET N-CH 40V 33A 8-SOIC
Produkt ist nicht verfügbar
SI4462DY-T1-GE3 SI4462DY-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 200V 1.15A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Produkt ist nicht verfügbar
SI4466DY-T1-GE3 SI4466DY-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 20V 9.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Produkt ist nicht verfügbar
SI4477DY-T1-GE3 SI4477DY-T1-GE3 Vishay Siliconix si4477dy.pdf Description: MOSFET P-CH 20V 26.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 18A, 4.5V
Power Dissipation (Max): 3W (Ta), 6.6W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
Produkt ist nicht verfügbar
SI4483EDY-T1-GE3 SI4483EDY-T1-GE3 Vishay Siliconix si4483ed.pdf Description: MOSFET P-CH 30V 10A 8SO
Produkt ist nicht verfügbar
SI4485DY-T1-GE3 SI4485DY-T1-GE3 Vishay Siliconix si4485dy.pdf Description: MOSFET P-CH 30V 6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.38 EUR
5000+ 0.36 EUR
Mindestbestellmenge: 2500
SI4486EY-T1-GE3 SI4486EY-T1-GE3 Vishay Siliconix si4486ey.pdf Description: MOSFET N-CH 100V 5.4A 8-SOIC
Produkt ist nicht verfügbar
SI4493DY-T1-E3 SI4493DY-T1-E3 Vishay Siliconix 72256.pdf Description: MOSFET P-CH 20V 10A 8SOIC
Produkt ist nicht verfügbar
SI4493DY-T1-GE3 SI4493DY-T1-GE3 Vishay Siliconix 72256.pdf Description: MOSFET P-CH 20V 10A 8SOIC
Produkt ist nicht verfügbar
Si4505DY-T1-E3 Si4505DY-T1-E3 Vishay Siliconix 71826.pdf Description: MOSFET N/P-CH 30V/8V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.8A
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI4505DY-T1-GE3 SI4505DY-T1-GE3 Vishay Siliconix 71826.pdf Description: MOSFET N/P-CH 30V/8V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.8A
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI4532ADY-T1-E3 SI4532ADY-T1-E3 Vishay Siliconix si4532ady.pdf Description: MOSFET N/P-CH 30V 3.7A/3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W, 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4532ADY-T1-GE3 SI4532ADY-T1-GE3 Vishay Siliconix si4532ady.pdf Description: MOSFET N/P-CH 30V 3.7A/3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W, 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4532CDY-T1-GE3 SI4532CDY-T1-GE3 Vishay Siliconix si4532cd.pdf Description: MOSFET N/P-CH 30V 6A/4.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.78W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.41 EUR
5000+ 0.39 EUR
Mindestbestellmenge: 2500
Si4539ADY-T1-E3 Si4539ADY-T1-E3 Vishay Siliconix 71131.pdf Description: MOSFET N/P-CH 30V 4.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI4539ADY-T1-GE3 SI4539ADY-T1-GE3 Vishay Siliconix 71131.pdf Description: MOSFET N/P-CH 30V 4.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI4542DY-T1-E3 SI4542DY-T1-E3 Vishay Siliconix Description: MOSFET N/P-CH 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4542DY-T1-GE3 SI4542DY-T1-GE3 Vishay Siliconix Description: MOSFET N/P-CH 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4544DY-T1-E3 SI4544DY-T1-E3 Vishay Siliconix 70768.pdf Description: MOSFET N/P-CH 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI4544DY-T1-GE3 SI4544DY-T1-GE3 Vishay Siliconix 70768.pdf Description: MOSFET N/P-CH 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI4561DY-T1-E3 SI4561DY-T1-E3 Vishay Siliconix 69730.pdf Description: MOSFET N/P-CH 40V 6.8A 8-SOIC
Produkt ist nicht verfügbar
Si4562DY-T1-E3 Si4562DY-T1-E3 Vishay Siliconix 70717.pdf Description: MOSFET N/P-CH 20V 8-SOIC
Produkt ist nicht verfügbar
SI4562DY-T1-GE3 SI4562DY-T1-GE3 Vishay Siliconix 70717.pdf Description: MOSFET N/P-CH 20V 8-SOIC
Produkt ist nicht verfügbar
SI4563DY-T1-GE3 SI4563DY-T1-GE3 Vishay Siliconix si4563dy.pdf Description: MOSFET N/P-CH 40V 8A 8-SOIC
Produkt ist nicht verfügbar
SI4565ADY-T1-GE3 SI4565ADY-T1-GE3 Vishay Siliconix 73880.pdf Description: MOSFET N/P-CH 40V 6.6A 8-SOIC
Produkt ist nicht verfügbar
SI4567DY-T1-GE3 SI4567DY-T1-GE3 Vishay Siliconix 73426.pdf Description: MOSFET N/P-CH 40V 5A 8-SOIC
Produkt ist nicht verfügbar
SI4569DY-T1-GE3 SI4569DY-T1-GE3 Vishay Siliconix 73586.pdf Description: MOSFET N/P-CH 40V 7.6A 8-SOIC
Produkt ist nicht verfügbar
SI4622DY-T1-E3 SI4622DY-T1-E3 Vishay Siliconix si4622dy.pdf Description: MOSFET 2N-CH 30V 8A 8-SOIC
Produkt ist nicht verfügbar
SI4626ADY-T1-E3 SI4626ADY-T1-E3 Vishay Siliconix si4626ad.pdf Description: MOSFET N-CH 30V 30A 8-SOIC
Produkt ist nicht verfügbar
SI4626ADY-T1-GE3 SI4626ADY-T1-GE3 Vishay Siliconix si4626ad.pdf Description: MOSFET N-CH 30V 30A 8-SOIC
Produkt ist nicht verfügbar
SI4628DY-T1-GE3 SI4628DY-T1-GE3 Vishay Siliconix si4628dy.pdf Description: MOSFET N-CH 30V 38A 8SOIC
Produkt ist nicht verfügbar
SI4632DY-T1-GE3 SI4632DY-T1-GE3 Vishay Siliconix si4632dy.pdf Description: MOSFET N-CH 25V 40A 8-SOIC
Produkt ist nicht verfügbar
SI4634DY-T1-E3 SI4634DY-T1-E3 Vishay Siliconix si4634dy.pdf Description: MOSFET N-CH 30V 24.5A 8SO
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.4 EUR
Mindestbestellmenge: 2500
SI4636DY-T1-E3 SI4636DY-T1-E3 Vishay Siliconix si4636dy.pdf Description: MOSFET N-CH 30V 17A 8SOIC
Produkt ist nicht verfügbar
SI4638DY-T1-E3 SI4638DY-T1-E3 Vishay Siliconix si4638dy.pdf Description: MOSFET N-CH 30V 22.4A 8SOIC
Produkt ist nicht verfügbar
SI4646DY-T1-E3 SI4646DY-T1-E3 Vishay Siliconix si4646dy.pdf Description: MOSFET N-CH 30V 12A 8SOIC
Produkt ist nicht verfügbar
SI4646DY-T1-GE3 SI4646DY-T1-GE3 Vishay Siliconix si4646dy.pdf Description: MOSFET N-CH 30V 12A 8SOIC
Produkt ist nicht verfügbar
SI4409DY-T1-E3 si4409dy.pdf
SI4409DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 150V 1.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 332 pF @ 50 V
Produkt ist nicht verfügbar
SI4410BDY-T1-E3 72211.pdf
SI4410BDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 7.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Produkt ist nicht verfügbar
SI4411DY-T1-E3
SI4411DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Produkt ist nicht verfügbar
SI4411DY-T1-GE3
SI4411DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Produkt ist nicht verfügbar
Si4412ADY-T1-E3 71105.pdf
Si4412ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.8A 8-SOIC
Produkt ist nicht verfügbar
SI4412ADY-T1-GE3 71105.pdf
SI4412ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.8A 8-SOIC
Produkt ist nicht verfügbar
SI4413ADY-T1-GE3 si4413ad.pdf
SI4413ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 13A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V
Produkt ist nicht verfügbar
SI4421DY-T1-GE3 si4421dy.pdf
SI4421DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 850µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.64 EUR
Mindestbestellmenge: 2500
SI4423DY-T1-GE3 si4423dy.pdf
SI4423DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8-SOIC
Produkt ist nicht verfügbar
SI4425BDY-T1-GE3 si4425bd.pdf
SI4425BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.38 EUR
Mindestbestellmenge: 2500
SI4425DDY-T1-GE3 si4425ddy.pdf
SI4425DDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 19.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
auf Bestellung 107500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.54 EUR
5000+ 0.51 EUR
12500+ 0.48 EUR
25000+ 0.47 EUR
Mindestbestellmenge: 2500
SI4426DY-T1-GE3 si4426dy.pdf
SI4426DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 6.5A 8SO
Produkt ist nicht verfügbar
SI4427BDY-T1-GE3 si4427bd.pdf
SI4427BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 12.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Produkt ist nicht verfügbar
SI4431CDY-T1-E3 si4431cd.pdf
SI4431CDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V
Power Dissipation (Max): 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1006 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.7 EUR
5000+ 0.67 EUR
Mindestbestellmenge: 2500
SI4435DDY-T1-E3 si4435ddy.pdf
SI4435DDY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 11.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 9.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.45 EUR
5000+ 0.43 EUR
12500+ 0.39 EUR
Mindestbestellmenge: 2500
SI4438DY-T1-E3
SI4438DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 36A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4645 pF @ 15 V
Produkt ist nicht verfügbar
SI4438DY-T1-GE3
SI4438DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 36A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.5W (Ta), 7.8W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4645 pF @ 15 V
Produkt ist nicht verfügbar
SI4442DY-T1-GE3 si4442dy.pdf
SI4442DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A 8SO
Produkt ist nicht verfügbar
SI4448DY-T1-GE3 si4448dy.pdf
SI4448DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 50A 8-SOIC
Produkt ist nicht verfügbar
SI4451DY-T1-E3 72115.pdf
SI4451DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 10A 8-SOIC
Produkt ist nicht verfügbar
SI4451DY-T1-GE3 72115.pdf
SI4451DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 10A 8-SOIC
Produkt ist nicht verfügbar
SI4453DY-T1-E3 72175.pdf
SI4453DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 10A 8-SOIC
Produkt ist nicht verfügbar
SI4453DY-T1-GE3 72175.pdf
SI4453DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 10A 8-SOIC
Produkt ist nicht verfügbar
SI4456DY-T1-GE3 73852.pdf
SI4456DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 33A 8-SOIC
Produkt ist nicht verfügbar
SI4462DY-T1-GE3
SI4462DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 1.15A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Produkt ist nicht verfügbar
SI4466DY-T1-GE3
SI4466DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 9.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Produkt ist nicht verfügbar
SI4477DY-T1-GE3 si4477dy.pdf
SI4477DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 26.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 18A, 4.5V
Power Dissipation (Max): 3W (Ta), 6.6W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 10 V
Produkt ist nicht verfügbar
SI4483EDY-T1-GE3 si4483ed.pdf
SI4483EDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 10A 8SO
Produkt ist nicht verfügbar
SI4485DY-T1-GE3 si4485dy.pdf
SI4485DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.9A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.38 EUR
5000+ 0.36 EUR
Mindestbestellmenge: 2500
SI4486EY-T1-GE3 si4486ey.pdf
SI4486EY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 5.4A 8-SOIC
Produkt ist nicht verfügbar
SI4493DY-T1-E3 72256.pdf
SI4493DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SOIC
Produkt ist nicht verfügbar
SI4493DY-T1-GE3 72256.pdf
SI4493DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SOIC
Produkt ist nicht verfügbar
Si4505DY-T1-E3 71826.pdf
Si4505DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V/8V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.8A
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI4505DY-T1-GE3 71826.pdf
SI4505DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V/8V 6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V, 8V
Current - Continuous Drain (Id) @ 25°C: 6A, 3.8A
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI4532ADY-T1-E3 si4532ady.pdf
SI4532ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 3.7A/3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W, 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4532ADY-T1-GE3 si4532ady.pdf
SI4532ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 3.7A/3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.13W, 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.7A, 3A
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4532CDY-T1-GE3 si4532cd.pdf
SI4532CDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 6A/4.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.78W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.41 EUR
5000+ 0.39 EUR
Mindestbestellmenge: 2500
Si4539ADY-T1-E3 71131.pdf
Si4539ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI4539ADY-T1-GE3 71131.pdf
SI4539ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 4.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.4A, 3.7A
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI4542DY-T1-E3
SI4542DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4542DY-T1-GE3
SI4542DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI4544DY-T1-E3 70768.pdf
SI4544DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI4544DY-T1-GE3 70768.pdf
SI4544DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 30V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
SI4561DY-T1-E3 69730.pdf
SI4561DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 6.8A 8-SOIC
Produkt ist nicht verfügbar
Si4562DY-T1-E3 70717.pdf
Si4562DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 8-SOIC
Produkt ist nicht verfügbar
SI4562DY-T1-GE3 70717.pdf
SI4562DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 8-SOIC
Produkt ist nicht verfügbar
SI4563DY-T1-GE3 si4563dy.pdf
SI4563DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 8A 8-SOIC
Produkt ist nicht verfügbar
SI4565ADY-T1-GE3 73880.pdf
SI4565ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 6.6A 8-SOIC
Produkt ist nicht verfügbar
SI4567DY-T1-GE3 73426.pdf
SI4567DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 5A 8-SOIC
Produkt ist nicht verfügbar
SI4569DY-T1-GE3 73586.pdf
SI4569DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 40V 7.6A 8-SOIC
Produkt ist nicht verfügbar
SI4622DY-T1-E3 si4622dy.pdf
SI4622DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 8A 8-SOIC
Produkt ist nicht verfügbar
SI4626ADY-T1-E3 si4626ad.pdf
SI4626ADY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A 8-SOIC
Produkt ist nicht verfügbar
SI4626ADY-T1-GE3 si4626ad.pdf
SI4626ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A 8-SOIC
Produkt ist nicht verfügbar
SI4628DY-T1-GE3 si4628dy.pdf
SI4628DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 38A 8SOIC
Produkt ist nicht verfügbar
SI4632DY-T1-GE3 si4632dy.pdf
SI4632DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A 8-SOIC
Produkt ist nicht verfügbar
SI4634DY-T1-E3 si4634dy.pdf
SI4634DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24.5A 8SO
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.4 EUR
Mindestbestellmenge: 2500
SI4636DY-T1-E3 si4636dy.pdf
SI4636DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8SOIC
Produkt ist nicht verfügbar
SI4638DY-T1-E3 si4638dy.pdf
SI4638DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 22.4A 8SOIC
Produkt ist nicht verfügbar
SI4646DY-T1-E3 si4646dy.pdf
SI4646DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SOIC
Produkt ist nicht verfügbar
SI4646DY-T1-GE3 si4646dy.pdf
SI4646DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SOIC
Produkt ist nicht verfügbar
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