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SI7423DN-T1-GE3 SI7423DN-T1-GE3 Vishay Siliconix 72582.pdf Description: MOSFET P-CH 30V 7.4A PPAK 1212-8
Produkt ist nicht verfügbar
SI7425DN-T1-E3 SI7425DN-T1-E3 Vishay Siliconix 72400.pdf Description: MOSFET P-CH 12V 8.3A PPAK 1212-8
Produkt ist nicht verfügbar
SI7425DN-T1-GE3 SI7425DN-T1-GE3 Vishay Siliconix 72400.pdf Description: MOSFET P-CH 12V 8.3A PPAK 1212-8
Produkt ist nicht verfügbar
Si7440DP-T1-E3 Si7440DP-T1-E3 Vishay Siliconix 71623.pdf Description: MOSFET N-CH 30V 12A PPAK SO-8
Produkt ist nicht verfügbar
SI7440DP-T1-GE3 SI7440DP-T1-GE3 Vishay Siliconix 71623.pdf Description: MOSFET N-CH 30V 12A PPAK SO-8
Produkt ist nicht verfügbar
Si7445DP-T1-E3 Si7445DP-T1-E3 Vishay Siliconix 71626.pdf Description: MOSFET P-CH 20V 12A PPAK 1212-8
Produkt ist nicht verfügbar
SI7445DP-T1-GE3 SI7445DP-T1-GE3 Vishay Siliconix 71626.pdf Description: MOSFET P-CH 20V 12A PPAK 1212-8
Produkt ist nicht verfügbar
SI7446BDP-T1-E3 SI7446BDP-T1-E3 Vishay Siliconix Description: MOSFET N-CH 30V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3076 pF @ 15 V
Produkt ist nicht verfügbar
SI7446BDP-T1-GE3 SI7446BDP-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 30V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3076 pF @ 15 V
Produkt ist nicht verfügbar
SI7447ADP-T1-E3 SI7447ADP-T1-E3 Vishay Siliconix si7447ad.pdf Description: MOSFET P-CH 30V 35A PPAK 1212-8
Produkt ist nicht verfügbar
SI7447ADP-T1-GE3 SI7447ADP-T1-GE3 Vishay Siliconix si7447ad.pdf Description: MOSFET P-CH 30V 35A PPAK 1212-8
Produkt ist nicht verfügbar
SI7448DP-T1-GE3 SI7448DP-T1-GE3 Vishay Siliconix si7448dp.pdf Description: MOSFET N-CH 20V 13.4A PPAK SO-8
Produkt ist nicht verfügbar
SI7452DP-T1-E3 SI7452DP-T1-E3 Vishay Siliconix 72972.pdf Description: MOSFET N-CH 60V 11.5A PPAK SO-8
Produkt ist nicht verfügbar
SI7452DP-T1-GE3 SI7452DP-T1-GE3 Vishay Siliconix 72972.pdf Description: MOSFET N-CH 60V 11.5A PPAK SO-8
Produkt ist nicht verfügbar
SI7455DP-T1-E3 SI7455DP-T1-E3 Vishay Siliconix si7455dp.pdf Description: MOSFET P-CH 80V 28A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V
Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 40 V
Produkt ist nicht verfügbar
SI7455DP-T1-GE3 SI7455DP-T1-GE3 Vishay Siliconix si7455dp.pdf Description: MOSFET P-CH 80V 28A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V
Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 40 V
Produkt ist nicht verfügbar
SI7457DP-T1-E3 SI7457DP-T1-E3 Vishay Siliconix si7457dp.pdf Description: MOSFET P-CH 100V 28A PPAK SO-8
Produkt ist nicht verfügbar
SI7457DP-T1-GE3 SI7457DP-T1-GE3 Vishay Siliconix si7457dp.pdf Description: MOSFET P-CH 100V 28A PPAK SO-8
Produkt ist nicht verfügbar
SI7476DP-T1-GE3 SI7476DP-T1-GE3 Vishay Siliconix si7476dp.pdf Description: MOSFET N-CH 40V 15A PPAK SO-8
Produkt ist nicht verfügbar
SI7491DP-T1-GE3 SI7491DP-T1-GE3 Vishay Siliconix 72276.pdf Description: MOSFET P-CH 30V 11A PPAK SO-8
Produkt ist nicht verfügbar
SI7495DP-T1-E3 SI7495DP-T1-E3 Vishay Siliconix 72277.pdf Description: MOSFET P-CH 12V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7495DP-T1-GE3 SI7495DP-T1-GE3 Vishay Siliconix 72277.pdf Description: MOSFET P-CH 12V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7530DP-T1-GE3 SI7530DP-T1-GE3 Vishay Siliconix 73249.pdf Description: MOSFET N/P-CH 60V 3A 8-SOIC
Produkt ist nicht verfügbar
SI7601DN-T1-E3 SI7601DN-T1-E3 Vishay Siliconix Description: MOSFET P-CH 20V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 11A, 4.5V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 10 V
Produkt ist nicht verfügbar
SI7615DN-T1-GE3 SI7615DN-T1-GE3 Vishay Siliconix si7615dn.pdf Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.05 EUR
6000+ 1 EUR
9000+ 0.96 EUR
Mindestbestellmenge: 3000
SI7633DP-T1-GE3 SI7633DP-T1-GE3 Vishay Siliconix si7633dp.pdf Description: MOSFET P-CH 20V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.18 EUR
Mindestbestellmenge: 3000
SI7634BDP-T1-E3 SI7634BDP-T1-E3 Vishay Siliconix si7634bd.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V
Produkt ist nicht verfügbar
SI7636DP-T1-GE3 SI7636DP-T1-GE3 Vishay Siliconix si7636dp.pdf Description: MOSFET N-CH 30V 17A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Produkt ist nicht verfügbar
SI7664DP-T1-E3 SI7664DP-T1-E3 Vishay Siliconix si7664dp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 15 V
Produkt ist nicht verfügbar
SI7664DP-T1-GE3 SI7664DP-T1-GE3 Vishay Siliconix si7664dp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 15 V
Produkt ist nicht verfügbar
SI7668ADP-T1-E3 SI7668ADP-T1-E3 Vishay Siliconix si7668ad.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 15 V
Produkt ist nicht verfügbar
SI7668ADP-T1-GE3 SI7668ADP-T1-GE3 Vishay Siliconix si7668ad.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 15 V
Produkt ist nicht verfügbar
SI7674DP-T1-E3 SI7674DP-T1-E3 Vishay Siliconix si7674dp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 15 V
Produkt ist nicht verfügbar
SI7674DP-T1-GE3 SI7674DP-T1-GE3 Vishay Siliconix si7674dp.pdf Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 15 V
Produkt ist nicht verfügbar
SI7682DP-T1-E3 SI7682DP-T1-E3 Vishay Siliconix 73350.pdf Description: MOSFET N-CH 30V 20A PPAK SO-8
Produkt ist nicht verfügbar
SI7682DP-T1-GE3 SI7682DP-T1-GE3 Vishay Siliconix Description: MOSFET N-CH 30V 20A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 27.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 15 V
Produkt ist nicht verfügbar
SI7804DN-T1-GE3 SI7804DN-T1-GE3 Vishay Siliconix 72317.pdf Description: MOSFET N-CH 30V 6.5A 1212-8
Produkt ist nicht verfügbar
SI7806ADN-T1-GE3 SI7806ADN-T1-GE3 Vishay Siliconix 72995.pdf Description: MOSFET N-CH 30V 9A 1212-8
Produkt ist nicht verfügbar
SI7840BDP-T1-E3 SI7840BDP-T1-E3 Vishay Siliconix 73218.pdf Description: MOSFET N-CH 30V 11A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Produkt ist nicht verfügbar
SI7840BDP-T1-GE3 SI7840BDP-T1-GE3 Vishay Siliconix 73218.pdf Description: MOSFET N-CH 30V 11A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Produkt ist nicht verfügbar
SI7848BDP-T1-E3 SI7848BDP-T1-E3 Vishay Siliconix si7848bdp.pdf Description: MOSFET N-CH 40V 47A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.23 EUR
6000+ 1.19 EUR
9000+ 1.15 EUR
Mindestbestellmenge: 3000
SI7852DP-T1-GE3 SI7852DP-T1-GE3 Vishay Siliconix si7852dp.pdf Description: MOSFET N-CH 80V 7.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Produkt ist nicht verfügbar
SI7856ADP-T1-E3 SI7856ADP-T1-E3 Vishay Siliconix 73157.pdf Description: MOSFET N-CH 30V 15A PPAK SO-8
Produkt ist nicht verfügbar
SI7856ADP-T1-GE3 SI7856ADP-T1-GE3 Vishay Siliconix 73157.pdf Description: MOSFET N-CH 30V 15A PPAK SO-8
Produkt ist nicht verfügbar
SI7860ADP-T1-GE3 SI7860ADP-T1-GE3 Vishay Siliconix si7860ad.pdf Description: MOSFET N-CH 30V 11A PPAK SO-8
Produkt ist nicht verfügbar
Si7860DP-T1-E3 Si7860DP-T1-E3 Vishay Siliconix 71854.pdf Description: MOSFET N-CH 30V 11A PPAK SO-8
Produkt ist nicht verfügbar
SI7860DP-T1-GE3 SI7860DP-T1-GE3 Vishay Siliconix 71854.pdf Description: MOSFET N-CH 30V 11A PPAK SO-8
Produkt ist nicht verfügbar
SI7862ADP-T1-E3 SI7862ADP-T1-E3 Vishay Siliconix 73165.pdf Description: MOSFET N-CH 16V 18A PPAK SO-8
Produkt ist nicht verfügbar
SI7862ADP-T1-GE3 SI7862ADP-T1-GE3 Vishay Siliconix 73165.pdf Description: MOSFET N-CH 16V 18A PPAK SO-8
Produkt ist nicht verfügbar
SI7866ADP-T1-GE3 SI7866ADP-T1-GE3 Vishay Siliconix 73380.pdf Description: MOSFET N-CH 20V 40A PPAK SO-8
Produkt ist nicht verfügbar
SI7868ADP-T1-E3 SI7868ADP-T1-E3 Vishay Siliconix 73384.pdf Description: MOSFET N-CH 20V 40A PPAK SO-8
Produkt ist nicht verfügbar
SI7868ADP-T1-GE3 SI7868ADP-T1-GE3 Vishay Siliconix 73384.pdf Description: MOSFET N-CH 20V 40A PPAK SO-8
Produkt ist nicht verfügbar
SI786CG-E3 SI786CG-E3 Vishay Siliconix si786.pdf Description: IC REG QD BUCK/LINEAR 28SSOP
Produkt ist nicht verfügbar
SI786CG-T1-E3 SI786CG-T1-E3 Vishay Siliconix si786.pdf Description: IC REG QD BUCK/LINEAR 28SSOP
Produkt ist nicht verfügbar
SI786CRG-E3 SI786CRG-E3 Vishay Siliconix si786.pdf Description: IC REG QD BUCK/LINEAR 28SSOP
Produkt ist nicht verfügbar
SI786CRG-T1-E3 SI786CRG-T1-E3 Vishay Siliconix si786.pdf Description: IC REG QD BUCK/LINEAR 28SSOP
Produkt ist nicht verfügbar
SI786CSG-E3 SI786CSG-E3 Vishay Siliconix si786.pdf Description: IC REG QD BUCK/LINEAR 28SSOP
Produkt ist nicht verfügbar
SI786CSG-T1-E3 SI786CSG-T1-E3 Vishay Siliconix si786.pdf Description: IC REG QD BUCK/LINEAR 28SSOP
Produkt ist nicht verfügbar
SI786DG-E3 SI786DG-E3 Vishay Siliconix si786.pdf Description: IC REG QD BUCK/LINEAR 28SSOP
Produkt ist nicht verfügbar
SI786DRG-E3 SI786DRG-E3 Vishay Siliconix si786.pdf Description: IC REG QD BUCK/LINEAR 28SSOP
Produkt ist nicht verfügbar
SI7423DN-T1-GE3 72582.pdf
SI7423DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 7.4A PPAK 1212-8
Produkt ist nicht verfügbar
SI7425DN-T1-E3 72400.pdf
SI7425DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 8.3A PPAK 1212-8
Produkt ist nicht verfügbar
SI7425DN-T1-GE3 72400.pdf
SI7425DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 8.3A PPAK 1212-8
Produkt ist nicht verfügbar
Si7440DP-T1-E3 71623.pdf
Si7440DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Produkt ist nicht verfügbar
SI7440DP-T1-GE3 71623.pdf
SI7440DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Produkt ist nicht verfügbar
Si7445DP-T1-E3 71626.pdf
Si7445DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK 1212-8
Produkt ist nicht verfügbar
SI7445DP-T1-GE3 71626.pdf
SI7445DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A PPAK 1212-8
Produkt ist nicht verfügbar
SI7446BDP-T1-E3
SI7446BDP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3076 pF @ 15 V
Produkt ist nicht verfügbar
SI7446BDP-T1-GE3
SI7446BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 19A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3076 pF @ 15 V
Produkt ist nicht verfügbar
SI7447ADP-T1-E3 si7447ad.pdf
SI7447ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 35A PPAK 1212-8
Produkt ist nicht verfügbar
SI7447ADP-T1-GE3 si7447ad.pdf
SI7447ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 35A PPAK 1212-8
Produkt ist nicht verfügbar
SI7448DP-T1-GE3 si7448dp.pdf
SI7448DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 13.4A PPAK SO-8
Produkt ist nicht verfügbar
SI7452DP-T1-E3 72972.pdf
SI7452DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 11.5A PPAK SO-8
Produkt ist nicht verfügbar
SI7452DP-T1-GE3 72972.pdf
SI7452DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 11.5A PPAK SO-8
Produkt ist nicht verfügbar
SI7455DP-T1-E3 si7455dp.pdf
SI7455DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 28A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V
Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 40 V
Produkt ist nicht verfügbar
SI7455DP-T1-GE3 si7455dp.pdf
SI7455DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 28A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 10.5A, 10V
Power Dissipation (Max): 5.2W (Ta), 83.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 40 V
Produkt ist nicht verfügbar
SI7457DP-T1-E3 si7457dp.pdf
SI7457DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 28A PPAK SO-8
Produkt ist nicht verfügbar
SI7457DP-T1-GE3 si7457dp.pdf
SI7457DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 28A PPAK SO-8
Produkt ist nicht verfügbar
SI7476DP-T1-GE3 si7476dp.pdf
SI7476DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 15A PPAK SO-8
Produkt ist nicht verfügbar
SI7491DP-T1-GE3 72276.pdf
SI7491DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 11A PPAK SO-8
Produkt ist nicht verfügbar
SI7495DP-T1-E3 72277.pdf
SI7495DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7495DP-T1-GE3 72277.pdf
SI7495DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7530DP-T1-GE3 73249.pdf
SI7530DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 3A 8-SOIC
Produkt ist nicht verfügbar
SI7601DN-T1-E3
SI7601DN-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 16A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 19.2mOhm @ 11A, 4.5V
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 10 V
Produkt ist nicht verfügbar
SI7615DN-T1-GE3 si7615dn.pdf
SI7615DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 35A PPAK1212-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® 1212-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.05 EUR
6000+ 1 EUR
9000+ 0.96 EUR
Mindestbestellmenge: 3000
SI7633DP-T1-GE3 si7633dp.pdf
SI7633DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 60A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9500 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.18 EUR
Mindestbestellmenge: 3000
SI7634BDP-T1-E3 si7634bd.pdf
SI7634BDP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 15A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3150 pF @ 15 V
Produkt ist nicht verfügbar
SI7636DP-T1-GE3 si7636dp.pdf
SI7636DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 15 V
Produkt ist nicht verfügbar
SI7664DP-T1-E3 si7664dp.pdf
SI7664DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 15 V
Produkt ist nicht verfügbar
SI7664DP-T1-GE3 si7664dp.pdf
SI7664DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7770 pF @ 15 V
Produkt ist nicht verfügbar
SI7668ADP-T1-E3 si7668ad.pdf
SI7668ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 15 V
Produkt ist nicht verfügbar
SI7668ADP-T1-GE3 si7668ad.pdf
SI7668ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8820 pF @ 15 V
Produkt ist nicht verfügbar
SI7674DP-T1-E3 si7674dp.pdf
SI7674DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 15 V
Produkt ist nicht verfügbar
SI7674DP-T1-GE3 si7674dp.pdf
SI7674DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5910 pF @ 15 V
Produkt ist nicht verfügbar
SI7682DP-T1-E3 73350.pdf
SI7682DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Produkt ist nicht verfügbar
SI7682DP-T1-GE3
SI7682DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 20A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 27.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 15 V
Produkt ist nicht verfügbar
SI7804DN-T1-GE3 72317.pdf
SI7804DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.5A 1212-8
Produkt ist nicht verfügbar
SI7806ADN-T1-GE3 72995.pdf
SI7806ADN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 9A 1212-8
Produkt ist nicht verfügbar
SI7840BDP-T1-E3 73218.pdf
SI7840BDP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Produkt ist nicht verfügbar
SI7840BDP-T1-GE3 73218.pdf
SI7840BDP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16.5A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Produkt ist nicht verfügbar
SI7848BDP-T1-E3 si7848bdp.pdf
SI7848BDP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 47A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 4.2W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 20 V
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.23 EUR
6000+ 1.19 EUR
9000+ 1.15 EUR
Mindestbestellmenge: 3000
SI7852DP-T1-GE3 si7852dp.pdf
SI7852DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 7.6A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Produkt ist nicht verfügbar
SI7856ADP-T1-E3 73157.pdf
SI7856ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8
Produkt ist nicht verfügbar
SI7856ADP-T1-GE3 73157.pdf
SI7856ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 15A PPAK SO-8
Produkt ist nicht verfügbar
SI7860ADP-T1-GE3 si7860ad.pdf
SI7860ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A PPAK SO-8
Produkt ist nicht verfügbar
Si7860DP-T1-E3 71854.pdf
Si7860DP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A PPAK SO-8
Produkt ist nicht verfügbar
SI7860DP-T1-GE3 71854.pdf
SI7860DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A PPAK SO-8
Produkt ist nicht verfügbar
SI7862ADP-T1-E3 73165.pdf
SI7862ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 16V 18A PPAK SO-8
Produkt ist nicht verfügbar
SI7862ADP-T1-GE3 73165.pdf
SI7862ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 16V 18A PPAK SO-8
Produkt ist nicht verfügbar
SI7866ADP-T1-GE3 73380.pdf
SI7866ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 40A PPAK SO-8
Produkt ist nicht verfügbar
SI7868ADP-T1-E3 73384.pdf
SI7868ADP-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 40A PPAK SO-8
Produkt ist nicht verfügbar
SI7868ADP-T1-GE3 73384.pdf
SI7868ADP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 40A PPAK SO-8
Produkt ist nicht verfügbar
SI786CG-E3 si786.pdf
SI786CG-E3
Hersteller: Vishay Siliconix
Description: IC REG QD BUCK/LINEAR 28SSOP
Produkt ist nicht verfügbar
SI786CG-T1-E3 si786.pdf
SI786CG-T1-E3
Hersteller: Vishay Siliconix
Description: IC REG QD BUCK/LINEAR 28SSOP
Produkt ist nicht verfügbar
SI786CRG-E3 si786.pdf
SI786CRG-E3
Hersteller: Vishay Siliconix
Description: IC REG QD BUCK/LINEAR 28SSOP
Produkt ist nicht verfügbar
SI786CRG-T1-E3 si786.pdf
SI786CRG-T1-E3
Hersteller: Vishay Siliconix
Description: IC REG QD BUCK/LINEAR 28SSOP
Produkt ist nicht verfügbar
SI786CSG-E3 si786.pdf
SI786CSG-E3
Hersteller: Vishay Siliconix
Description: IC REG QD BUCK/LINEAR 28SSOP
Produkt ist nicht verfügbar
SI786CSG-T1-E3 si786.pdf
SI786CSG-T1-E3
Hersteller: Vishay Siliconix
Description: IC REG QD BUCK/LINEAR 28SSOP
Produkt ist nicht verfügbar
SI786DG-E3 si786.pdf
SI786DG-E3
Hersteller: Vishay Siliconix
Description: IC REG QD BUCK/LINEAR 28SSOP
Produkt ist nicht verfügbar
SI786DRG-E3 si786.pdf
SI786DRG-E3
Hersteller: Vishay Siliconix
Description: IC REG QD BUCK/LINEAR 28SSOP
Produkt ist nicht verfügbar
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