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SI7862ADP-T1-E3 Vishay / Siliconix
auf Bestellung 2363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.18 EUR |
10+ | 6.04 EUR |
25+ | 5.7 EUR |
100+ | 4.89 EUR |
250+ | 4.61 EUR |
500+ | 4.33 EUR |
1000+ | 3.71 EUR |
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Technische Details SI7862ADP-T1-E3 Vishay / Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W, Case: PowerPAK® SO8, Drain-source voltage: 16V, Drain current: 29A, On-state resistance: 5.5mΩ, Type of transistor: N-MOSFET, Power dissipation: 5.4W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 80nC, Technology: TrenchFET®, Kind of channel: enhanced, Gate-source voltage: ±8V, Pulsed drain current: 60A, Mounting: SMD, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote SI7862ADP-T1-E3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SI7862ADP-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W Case: PowerPAK® SO8 Drain-source voltage: 16V Drain current: 29A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 5.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 80nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7862ADP-T1-E3 | Hersteller : Vishay Siliconix |
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Produkt ist nicht verfügbar |
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SI7862ADP-T1-E3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 16V; 29A; Idm: 60A; 5.4W Case: PowerPAK® SO8 Drain-source voltage: 16V Drain current: 29A On-state resistance: 5.5mΩ Type of transistor: N-MOSFET Power dissipation: 5.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 80nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 60A Mounting: SMD |
Produkt ist nicht verfügbar |