Technische Details SI7806ADN-T1-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W, Type of transistor: N-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 14A, Pulsed drain current: 40A, Power dissipation: 3.7W, Case: PowerPAK® 1212-8, Gate-source voltage: ±20V, On-state resistance: 16mΩ, Mounting: SMD, Gate charge: 20nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote SI7806ADN-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SI7806ADN-T1-GE3 | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Pulsed drain current: 40A Power dissipation: 3.7W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7806ADN-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 9A 1212-8 |
Produkt ist nicht verfügbar |
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SI7806ADN-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 30V 14A 3.7W 11mohm @ 10V |
Produkt ist nicht verfügbar |
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| SI7806ADN-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 14A; Idm: 40A; 3.7W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 14A Pulsed drain current: 40A Power dissipation: 3.7W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |