SIB911DK-T1-GE3
Hersteller:
auf Bestellung 652 Stücke:
Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details SIB911DK-T1-GE3
Description: MOSFET 2P-CH 20V 2.6A SC75-6L, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-75-6L Dual, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.6A, Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V, Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerPAK® SC-75-6L Dual.
Weitere Produktangebote SIB911DK-T1-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
SIB911DK-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 20V 2.6A SC75-6L Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-75-6L Dual Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A Input Capacitance (Ciss) (Max) @ Vds: 115pF @ 10V Rds On (Max) @ Id, Vgs: 295mOhm @ 1.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerPAK® SC-75-6L Dual |
Produkt ist nicht verfügbar |