Technische Details SIHP22N60S-E3 Vishay
Description: MOSFET N-CH 600V 22A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V.
Weitere Produktangebote SIHP22N60S-E3
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SIHP22N60S-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 22A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 11A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V |
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