Produkte > VISHAY SILICONIX > Alle Produkte des Herstellers VISHAY SILICONIX (10968) > Seite 50 nach 183
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DG4051AEN-T1-E4 | Vishay Siliconix |
Description: IC MUX 8:1 100OHM 16MINIQFN Packaging: Cut Tape (CT) Package / Case: 16-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 100Ohm -3db Bandwidth: 330MHz Supplier Device Package: 16-miniQFN (1.8x2.6) Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±2.5V ~ 5V Charge Injection: 0.25pC Crosstalk: -67dB @ 10MHz Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 3Ohm Switch Time (Ton, Toff) (Max): 108ns, 92ns Channel Capacitance (CS(off), CD(off)): 3pF, 12pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 1 |
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DG4052AEN-T1-E4 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 100Ohm -3db Bandwidth: 450MHz Supplier Device Package: 16-miniQFN (1.8x2.6) Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±2.5V ~ 5V Charge Injection: 0.25pC Crosstalk: -67dB @ 10MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 3Ohm Switch Time (Ton, Toff) (Max): 108ns, 92ns Channel Capacitance (CS(off), CD(off)): 3pF, 7pF Current - Leakage (IS(off)) (Max): 1nA Number of Circuits: 2 |
Produkt ist nicht verfügbar |
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DG4053AEN-T1-E4 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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DG411DY-T1 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 35Ohm Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 5V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 5pC Crosstalk: -85dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 175ns, 145ns Channel Capacitance (CS(off), CD(off)): 9pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Obsolete Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DG411HSDN-T1-E4 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 35Ohm Supplier Device Package: 16-QFN (4x4) Voltage - Supply, Single (V+): 13V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 22pC Crosstalk: -88dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 105ns, 80ns Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Active Number of Circuits: 4 |
auf Bestellung 2907 Stücke: Lieferzeit 10-14 Tag (e) |
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DG411HSDY-T1 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 35Ohm Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 13V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 22pC Crosstalk: -88dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 105ns, 80ns Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Obsolete Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DG411HSDY-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 35Ohm Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 13V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 22pC Crosstalk: -88dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 105ns, 80ns Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Active Number of Circuits: 4 |
auf Bestellung 172 Stücke: Lieferzeit 10-14 Tag (e) |
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DG411LDQ-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 17Ohm -3db Bandwidth: 280MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±3V ~ 6V Charge Injection: 5pC Crosstalk: -95dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 19ns, 12ns Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Obsolete Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DG411LDY-T1 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 17Ohm -3db Bandwidth: 280MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±3V ~ 6V Charge Injection: 5pC Crosstalk: -95dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 19ns, 12ns Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Obsolete Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DG411LDY-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 17Ohm -3db Bandwidth: 280MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±3V ~ 6V Charge Injection: 5pC Crosstalk: -95dB @ 1MHz Switch Circuit: SPST - NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 19ns, 12ns Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Obsolete Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DG412DY-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 35Ohm Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 5V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 5pC Crosstalk: -85dB @ 1MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 175ns, 145ns Channel Capacitance (CS(off), CD(off)): 9pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Active Number of Circuits: 4 |
auf Bestellung 18623 Stücke: Lieferzeit 10-14 Tag (e) |
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DG412HSDN-T1-E4 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-VQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 35Ohm Supplier Device Package: 16-QFN (4x4) Voltage - Supply, Single (V+): 13V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 22pC Crosstalk: -88dB @ 1MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 105ns, 80ns Channel Capacitance (CS(off), CD(off)): 12pF, 12pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Active Number of Circuits: 4 |
auf Bestellung 4832 Stücke: Lieferzeit 10-14 Tag (e) |
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DG412LDQ-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 17Ohm -3db Bandwidth: 280MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±3V ~ 6V Charge Injection: 5pC Crosstalk: -95dB @ 1MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 19ns, 12ns Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Obsolete Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DG412LDY-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 17Ohm -3db Bandwidth: 280MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±3V ~ 6V Charge Injection: 5pC Crosstalk: -95dB @ 1MHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 19ns, 12ns Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Obsolete Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DG413DY-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 35Ohm Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 5V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 5pC Crosstalk: -85dB @ 1MHz Switch Circuit: SPST - NO/NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 175ns, 145ns Channel Capacitance (CS(off), CD(off)): 9pF, 9pF Current - Leakage (IS(off)) (Max): 250pA Part Status: Active Number of Circuits: 4 |
auf Bestellung 1787 Stücke: Lieferzeit 10-14 Tag (e) |
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DG413LDQ-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 17Ohm -3db Bandwidth: 280MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±3V ~ 6V Charge Injection: 5pC Crosstalk: -95dB @ 1MHz Switch Circuit: SPST - NO/NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 19ns, 12ns Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Current - Leakage (IS(off)) (Max): 250pA Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DG413LDY-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 17Ohm -3db Bandwidth: 280MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±3V ~ 6V Charge Injection: 5pC Crosstalk: -95dB @ 1MHz Switch Circuit: SPST - NO/NC Multiplexer/Demultiplexer Circuit: 1:1 Switch Time (Ton, Toff) (Max): 19ns, 12ns Channel Capacitance (CS(off), CD(off)): 5pF, 6pF Current - Leakage (IS(off)) (Max): 250pA Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DG4157DL-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.2Ohm -3db Bandwidth: 117MHz Supplier Device Package: SC-70-6 Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 50pC Crosstalk: -63dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 120mOhm (Max) Switch Time (Ton, Toff) (Max): 37ns, 23ns Channel Capacitance (CS(off), CD(off)): 20pF Current - Leakage (IS(off)) (Max): 2nA Part Status: Obsolete Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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DG4157DN-T1-E4 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.2Ohm -3db Bandwidth: 117MHz Supplier Device Package: 6-miniQFN (1x1.2) Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 50pC Crosstalk: -63dB @ 1MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 120mOhm (Max) Switch Time (Ton, Toff) (Max): 37ns, 23ns Channel Capacitance (CS(off), CD(off)): 20pF Current - Leakage (IS(off)) (Max): 2nA Part Status: Obsolete Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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DG508BEY-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 380Ohm -3db Bandwidth: 250MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 12V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 2pC Crosstalk: -88dB @ 1MHz Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 10Ohm Switch Time (Ton, Toff) (Max): 250ns, 240ns Channel Capacitance (CS(off), CD(off)): 3pF, 13pF Current - Leakage (IS(off)) (Max): 1nA Part Status: Active Number of Circuits: 1 |
auf Bestellung 2627 Stücke: Lieferzeit 10-14 Tag (e) |
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DG508BEQ-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 380Ohm -3db Bandwidth: 250MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 12V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 2pC Crosstalk: -88dB @ 1MHz Multiplexer/Demultiplexer Circuit: 8:1 Channel-to-Channel Matching (ΔRon): 10Ohm Switch Time (Ton, Toff) (Max): 250ns, 240ns Channel Capacitance (CS(off), CD(off)): 3pF, 13pF Current - Leakage (IS(off)) (Max): 1nA Part Status: Active Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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DG509BEY-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 380Ohm -3db Bandwidth: 250MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 12V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 2pC Crosstalk: -88dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 10Ohm Switch Time (Ton, Toff) (Max): 250ns, 240ns Channel Capacitance (CS(off), CD(off)): 3pF, 8pF Current - Leakage (IS(off)) (Max): 1nA Part Status: Active Number of Circuits: 2 |
auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
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DG509BEQ-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 380Ohm -3db Bandwidth: 250MHz Supplier Device Package: 16-TSSOP Voltage - Supply, Single (V+): 12V ~ 44V Voltage - Supply, Dual (V±): ±5V ~ 20V Charge Injection: 2pC Crosstalk: -88dB @ 1MHz Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Channel-to-Channel Matching (ΔRon): 10Ohm Switch Time (Ton, Toff) (Max): 250ns, 240ns Channel Capacitance (CS(off), CD(off)): 3pF, 8pF Current - Leakage (IS(off)) (Max): 1nA Part Status: Active Number of Circuits: 2 |
auf Bestellung 2985 Stücke: Lieferzeit 10-14 Tag (e) |
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DG611DY-T1-E3 | Vishay Siliconix |
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auf Bestellung 2392 Stücke: Lieferzeit 10-14 Tag (e) |
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DG612DY-T1-E3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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DG613DY-T1-E3 | Vishay Siliconix |
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auf Bestellung 318 Stücke: Lieferzeit 10-14 Tag (e) |
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DG636EN-T1-E4 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 16-WFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) On-State Resistance (Max): 115Ohm -3db Bandwidth: 610MHz Supplier Device Package: 16-miniQFN (1.8x2.6) Voltage - Supply, Single (V+): 2.7V ~ 12V Voltage - Supply, Dual (V±): ±2.7V ~ 5V Charge Injection: 0.1pC Crosstalk: -88dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 1Ohm Switch Time (Ton, Toff) (Max): 60ns, 52ns Channel Capacitance (CS(off), CD(off)): 2.1pF, 4.2pF Current - Leakage (IS(off)) (Max): 100pA Part Status: Obsolete Number of Circuits: 2 |
Produkt ist nicht verfügbar |
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DG9421DV-T1-E3 | Vishay Siliconix |
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auf Bestellung 6523 Stücke: Lieferzeit 10-14 Tag (e) |
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DG9422DV-T1-E3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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DG2706DN-T1-E4 | Vishay Siliconix |
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auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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DG2722DN-T1-E4 | Vishay Siliconix |
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auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
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DG2727DN-T1-E4 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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DG2735DN-T1-E4 | Vishay Siliconix |
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auf Bestellung 4620 Stücke: Lieferzeit 10-14 Tag (e) |
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DG611DY-T1-E3 | Vishay Siliconix |
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auf Bestellung 2392 Stücke: Lieferzeit 10-14 Tag (e) |
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DG613DY-T1-E3 | Vishay Siliconix |
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auf Bestellung 318 Stücke: Lieferzeit 10-14 Tag (e) |
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DG9421DV-T1-E3 | Vishay Siliconix |
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auf Bestellung 6523 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7852ADP-T1-E3 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 40 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7852ADP-T1-E3 | Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 5W (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 40 V |
auf Bestellung 4454 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7880ADP-T1-E3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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SI7860ADP-T1-E3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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SI2303BDS-T1 | Vishay Siliconix |
Description: MOSFET P-CH 30V 1.49A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI2343DS-T1 | Vishay Siliconix |
Description: MOSFET P-CH 30V 3.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V |
Produkt ist nicht verfügbar |
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IRF530STRLPBF | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V Power Dissipation (Max): 3.7W (Ta), 88W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2335DS-T1-E3 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 51mOhm @ 4A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V |
Produkt ist nicht verfügbar |
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SI2302ADS-T1 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 50µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
Produkt ist nicht verfügbar |
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SI2302CDS-T1-E3 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V Power Dissipation (Max): 710mW (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V |
auf Bestellung 189000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2316BDS-T1-E3 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI2323DS-T1 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V |
Produkt ist nicht verfügbar |
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SI1553DL-T1 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 600mV @ 250µA (Min) Supplier Device Package: SC-70-6 |
Produkt ist nicht verfügbar |
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TP0610K-T1 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 185mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V |
Produkt ist nicht verfügbar |
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DG3001DB-T1-E1 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-MICRO FOOT®CSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 700mOhm Supplier Device Package: 6-Micro Foot™ (1.5x1) Voltage - Supply, Single (V+): 1.8V ~ 5.5V Charge Injection: 64pC Crosstalk: -70dB @ 100kHz Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Channel-to-Channel Matching (ΔRon): 10mOhm Switch Time (Ton, Toff) (Max): 71ns, 59ns Channel Capacitance (CS(off), CD(off)): 100pF Current - Leakage (IS(off)) (Max): 1nA Part Status: Obsolete Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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SI9945AEY-T1 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 3.7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.7A Rds On (Max) @ Id, Vgs: 80mOhm @ 3.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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SI7460DP-T1-E3 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SUD06N10-225L-E3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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DG413LDQ-E3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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SIR426DP-T1-GE3 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® SO-8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 20 V |
auf Bestellung 36000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1039X-T1-GE3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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SI1070X-T1-GE3 | Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 99mOhm @ 1.2A, 4.5V Power Dissipation (Max): 236mW (Ta) Vgs(th) (Max) @ Id: 1.55V @ 250µA Supplier Device Package: SC-89 (SOT-563F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1039X-T1-GE3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
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SI1039X-T1-GE3 | Vishay Siliconix |
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Produkt ist nicht verfügbar |
DG4051AEN-T1-E4 |
Hersteller: Vishay Siliconix
Description: IC MUX 8:1 100OHM 16MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.5V ~ 5V
Charge Injection: 0.25pC
Crosstalk: -67dB @ 10MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 108ns, 92ns
Channel Capacitance (CS(off), CD(off)): 3pF, 12pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Description: IC MUX 8:1 100OHM 16MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.5V ~ 5V
Charge Injection: 0.25pC
Crosstalk: -67dB @ 10MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 108ns, 92ns
Channel Capacitance (CS(off), CD(off)): 3pF, 12pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 1
Produkt ist nicht verfügbar
DG4052AEN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SW SP4TX2 100OHM 16MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 450MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.5V ~ 5V
Charge Injection: 0.25pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 108ns, 92ns
Channel Capacitance (CS(off), CD(off)): 3pF, 7pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Description: IC SW SP4TX2 100OHM 16MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 450MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.5V ~ 5V
Charge Injection: 0.25pC
Crosstalk: -67dB @ 10MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 3Ohm
Switch Time (Ton, Toff) (Max): 108ns, 92ns
Channel Capacitance (CS(off), CD(off)): 3pF, 7pF
Current - Leakage (IS(off)) (Max): 1nA
Number of Circuits: 2
Produkt ist nicht verfügbar
DG4053AEN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC MUX TRIPLE 2CHAN 16-MINIQFN
Description: IC MUX TRIPLE 2CHAN 16-MINIQFN
Produkt ist nicht verfügbar
DG411DY-T1 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
DG411HSDN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 35OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
Description: IC SWITCH SPST-NCX4 35OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 2907 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
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3+ | 7.59 EUR |
10+ | 6.81 EUR |
25+ | 6.43 EUR |
100+ | 5.58 EUR |
250+ | 5.29 EUR |
500+ | 4.75 EUR |
1000+ | 4 EUR |
DG411HSDY-T1 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
DG411HSDY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
Description: IC SWITCH SPST-NCX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.83 EUR |
10+ | 6.12 EUR |
25+ | 5.79 EUR |
100+ | 5.02 EUR |
DG411LDQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SW SPST-NCX4 17OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Description: IC SW SPST-NCX4 17OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
DG411LDY-T1 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 17OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Description: IC SWITCH SPST-NCX4 17OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
DG411LDY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NCX4 17OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Description: IC SWITCH SPST-NCX4 17OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
DG412DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
Description: IC SWITCH SPST-NOX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 18623 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.94 EUR |
10+ | 3.54 EUR |
25+ | 3.34 EUR |
100+ | 2.85 EUR |
250+ | 2.67 EUR |
500+ | 2.34 EUR |
1000+ | 1.94 EUR |
DG412HSDN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 35OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
Description: IC SWITCH SPST-NOX4 35OHM 16QFN
Packaging: Cut Tape (CT)
Package / Case: 16-VQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-QFN (4x4)
Voltage - Supply, Single (V+): 13V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 22pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 105ns, 80ns
Channel Capacitance (CS(off), CD(off)): 12pF, 12pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 4832 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.41 EUR |
10+ | 6.65 EUR |
25+ | 6.29 EUR |
100+ | 5.45 EUR |
250+ | 5.17 EUR |
500+ | 4.64 EUR |
1000+ | 3.91 EUR |
DG412LDQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SW SPST-NOX4 17OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Description: IC SW SPST-NOX4 17OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
DG412LDY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST-NOX4 17OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Description: IC SWITCH SPST-NOX4 17OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Obsolete
Number of Circuits: 4
Produkt ist nicht verfügbar
DG413DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
Description: IC SW SPST-NO/NCX4 35OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 35Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 5V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 5pC
Crosstalk: -85dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 175ns, 145ns
Channel Capacitance (CS(off), CD(off)): 9pF, 9pF
Current - Leakage (IS(off)) (Max): 250pA
Part Status: Active
Number of Circuits: 4
auf Bestellung 1787 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.92 EUR |
10+ | 3.53 EUR |
25+ | 3.33 EUR |
100+ | 2.84 EUR |
250+ | 2.66 EUR |
500+ | 2.33 EUR |
1000+ | 1.93 EUR |
DG413LDQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 17OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
Description: IC SW SPST-NO/NCX4 17OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
Produkt ist nicht verfügbar
DG413LDY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SW SPST-NO/NCX4 17OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
Description: IC SW SPST-NO/NCX4 17OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 17Ohm
-3db Bandwidth: 280MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±3V ~ 6V
Charge Injection: 5pC
Crosstalk: -95dB @ 1MHz
Switch Circuit: SPST - NO/NC
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 19ns, 12ns
Channel Capacitance (CS(off), CD(off)): 5pF, 6pF
Current - Leakage (IS(off)) (Max): 250pA
Number of Circuits: 4
Produkt ist nicht verfügbar
DG4157DL-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPDT X 1 1.2OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 117MHz
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 50pC
Crosstalk: -63dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 120mOhm (Max)
Switch Time (Ton, Toff) (Max): 37ns, 23ns
Channel Capacitance (CS(off), CD(off)): 20pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Obsolete
Number of Circuits: 1
Description: IC SWITCH SPDT X 1 1.2OHM SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 117MHz
Supplier Device Package: SC-70-6
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 50pC
Crosstalk: -63dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 120mOhm (Max)
Switch Time (Ton, Toff) (Max): 37ns, 23ns
Channel Capacitance (CS(off), CD(off)): 20pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
DG4157DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPDTX1 1.2OHM 6MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 117MHz
Supplier Device Package: 6-miniQFN (1x1.2)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 50pC
Crosstalk: -63dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 120mOhm (Max)
Switch Time (Ton, Toff) (Max): 37ns, 23ns
Channel Capacitance (CS(off), CD(off)): 20pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Obsolete
Number of Circuits: 1
Description: IC SWITCH SPDTX1 1.2OHM 6MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.2Ohm
-3db Bandwidth: 117MHz
Supplier Device Package: 6-miniQFN (1x1.2)
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 50pC
Crosstalk: -63dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 120mOhm (Max)
Switch Time (Ton, Toff) (Max): 37ns, 23ns
Channel Capacitance (CS(off), CD(off)): 20pF
Current - Leakage (IS(off)) (Max): 2nA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
DG508BEY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC MUX 8:1 380OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 380Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 2pC
Crosstalk: -88dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
Description: IC MUX 8:1 380OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 380Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 2pC
Crosstalk: -88dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
auf Bestellung 2627 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.51 EUR |
10+ | 4.04 EUR |
25+ | 3.81 EUR |
100+ | 3.25 EUR |
250+ | 3.05 EUR |
500+ | 2.67 EUR |
1000+ | 2.21 EUR |
DG508BEQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC MUX 8:1 380OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 380Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 2pC
Crosstalk: -88dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
Description: IC MUX 8:1 380OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 380Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 2pC
Crosstalk: -88dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel Capacitance (CS(off), CD(off)): 3pF, 13pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 1
Produkt ist nicht verfügbar
DG509BEY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SP4T X 2 380OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 380Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 2pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4T X 2 380OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 380Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 2pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
auf Bestellung 3500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.45 EUR |
10+ | 4 EUR |
25+ | 3.78 EUR |
100+ | 3.22 EUR |
250+ | 3.02 EUR |
500+ | 2.64 EUR |
1000+ | 2.19 EUR |
DG509BEQ-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SP4TX2 380OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 380Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 2pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
Description: IC SWITCH SP4TX2 380OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 380Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 12V ~ 44V
Voltage - Supply, Dual (V±): ±5V ~ 20V
Charge Injection: 2pC
Crosstalk: -88dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Switch Time (Ton, Toff) (Max): 250ns, 240ns
Channel Capacitance (CS(off), CD(off)): 3pF, 8pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Active
Number of Circuits: 2
auf Bestellung 2985 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.75 EUR |
10+ | 4.27 EUR |
25+ | 4.04 EUR |
100+ | 3.5 EUR |
250+ | 3.32 EUR |
500+ | 2.98 EUR |
1000+ | 2.51 EUR |
DG611DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Description: IC SWITCH QUAD SPST 16-SOIC
auf Bestellung 2392 Stücke:
Lieferzeit 10-14 Tag (e)DG612DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Description: IC SWITCH QUAD SPST 16-SOIC
Produkt ist nicht verfügbar
DG613DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD NO/NC 16-SOIC
Description: IC SWITCH QUAD NO/NC 16-SOIC
auf Bestellung 318 Stücke:
Lieferzeit 10-14 Tag (e)DG636EN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SW SPDTX2 115OHM 16MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 610MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Charge Injection: 0.1pC
Crosstalk: -88dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 60ns, 52ns
Channel Capacitance (CS(off), CD(off)): 2.1pF, 4.2pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Obsolete
Number of Circuits: 2
Description: IC SW SPDTX2 115OHM 16MINIQFN
Packaging: Cut Tape (CT)
Package / Case: 16-WFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
On-State Resistance (Max): 115Ohm
-3db Bandwidth: 610MHz
Supplier Device Package: 16-miniQFN (1.8x2.6)
Voltage - Supply, Single (V+): 2.7V ~ 12V
Voltage - Supply, Dual (V±): ±2.7V ~ 5V
Charge Injection: 0.1pC
Crosstalk: -88dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 1Ohm
Switch Time (Ton, Toff) (Max): 60ns, 52ns
Channel Capacitance (CS(off), CD(off)): 2.1pF, 4.2pF
Current - Leakage (IS(off)) (Max): 100pA
Part Status: Obsolete
Number of Circuits: 2
Produkt ist nicht verfügbar
DG9421DV-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SGL 5V ON/OFF 6-TSOP
Description: IC SWITCH SGL 5V ON/OFF 6-TSOP
auf Bestellung 6523 Stücke:
Lieferzeit 10-14 Tag (e)DG9422DV-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SNGL SPST 5V 6TSOP
Description: IC SWITCH SNGL SPST 5V 6TSOP
Produkt ist nicht verfügbar
DG2706DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPDT 16-MINIQFN
Description: IC SWITCH QUAD SPDT 16-MINIQFN
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)DG2722DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH DPDT USB2.0 10-MINIQFN
Description: IC SWITCH DPDT USB2.0 10-MINIQFN
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)DG2727DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPST 1 OHM 8MINIQFN
Description: IC SWITCH 2XSPST 1 OHM 8MINIQFN
Produkt ist nicht verfügbar
DG2735DN-T1-E4 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH 2XSPDT 500MOHM MINIQFN
Description: IC SWITCH 2XSPDT 500MOHM MINIQFN
auf Bestellung 4620 Stücke:
Lieferzeit 10-14 Tag (e)DG611DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST 16-SOIC
Description: IC SWITCH QUAD SPST 16-SOIC
auf Bestellung 2392 Stücke:
Lieferzeit 10-14 Tag (e)DG613DY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD NO/NC 16-SOIC
Description: IC SWITCH QUAD NO/NC 16-SOIC
auf Bestellung 318 Stücke:
Lieferzeit 10-14 Tag (e)DG9421DV-T1-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SGL 5V ON/OFF 6-TSOP
Description: IC SWITCH SGL 5V ON/OFF 6-TSOP
auf Bestellung 6523 Stücke:
Lieferzeit 10-14 Tag (e)SI7852ADP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 40 V
Description: MOSFET N-CH 80V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 2.12 EUR |
SI7852ADP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 40 V
Description: MOSFET N-CH 80V 30A PPAK SO-8
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 5W (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1825 pF @ 40 V
auf Bestellung 4454 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 4.35 EUR |
10+ | 3.65 EUR |
100+ | 2.95 EUR |
500+ | 2.63 EUR |
1000+ | 2.25 EUR |
SI7880ADP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 40A PPAK SO-8
Description: MOSFET N-CH 30V 40A PPAK SO-8
Produkt ist nicht verfügbar
SI7860ADP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A PPAK SO-8
Description: MOSFET N-CH 30V 11A PPAK SO-8
Produkt ist nicht verfügbar
SI2303BDS-T1 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Description: MOSFET P-CH 30V 1.49A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Produkt ist nicht verfügbar
SI2343DS-T1 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
Description: MOSFET P-CH 30V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
Produkt ist nicht verfügbar
IRF530STRLPBF |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Description: MOSFET N-CH 100V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
800+ | 1.53 EUR |
SI2335DS-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
Description: MOSFET P-CH 12V 3.2A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
Produkt ist nicht verfügbar
SI2302ADS-T1 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Description: MOSFET N-CH 20V 2.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 50µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
Produkt ist nicht verfügbar
SI2302CDS-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Description: MOSFET N-CH 20V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
auf Bestellung 189000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.18 EUR |
6000+ | 0.17 EUR |
9000+ | 0.15 EUR |
75000+ | 0.14 EUR |
SI2316BDS-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Description: MOSFET N-CH 30V 4.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.9A, 10V
Power Dissipation (Max): 1.25W (Ta), 1.66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 15 V
Produkt ist nicht verfügbar
SI2323DS-T1 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Produkt ist nicht verfügbar
SI1553DL-T1 |
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Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Description: MOSFET N/P-CH 20V 0.66A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA, 410mA
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Supplier Device Package: SC-70-6
Produkt ist nicht verfügbar
TP0610K-T1 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 185MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
Description: MOSFET P-CH 60V 185MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 185mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
Produkt ist nicht verfügbar
DG3001DB-T1-E1 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH SPST 700MOHM 6MICRO FT
Packaging: Tape & Reel (TR)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 700mOhm
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 64pC
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 10mOhm
Switch Time (Ton, Toff) (Max): 71ns, 59ns
Channel Capacitance (CS(off), CD(off)): 100pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 1
Description: IC SWITCH SPST 700MOHM 6MICRO FT
Packaging: Tape & Reel (TR)
Package / Case: 6-MICRO FOOT®CSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 700mOhm
Supplier Device Package: 6-Micro Foot™ (1.5x1)
Voltage - Supply, Single (V+): 1.8V ~ 5.5V
Charge Injection: 64pC
Crosstalk: -70dB @ 100kHz
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Channel-to-Channel Matching (ΔRon): 10mOhm
Switch Time (Ton, Toff) (Max): 71ns, 59ns
Channel Capacitance (CS(off), CD(off)): 100pF
Current - Leakage (IS(off)) (Max): 1nA
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
SI9945AEY-T1 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2N-CH 60V 3.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.7A
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
SI7460DP-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 11A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Description: MOSFET N-CH 60V 11A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.57 EUR |
6000+ | 1.51 EUR |
9000+ | 1.46 EUR |
SUD06N10-225L-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 6.5A TO252
Description: MOSFET N-CH 100V 6.5A TO252
Produkt ist nicht verfügbar
DG413LDQ-E3 |
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Hersteller: Vishay Siliconix
Description: IC SWITCH QUAD SPST LV 16-TSSOP
Description: IC SWITCH QUAD SPST LV 16-TSSOP
Produkt ist nicht verfügbar
SIR426DP-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 20 V
Description: MOSFET N-CH 40V 30A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 41.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 20 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.68 EUR |
6000+ | 0.65 EUR |
9000+ | 0.62 EUR |
SI1039X-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.87A SC89
Description: MOSFET P-CH 12V 0.87A SC89
Produkt ist nicht verfügbar
SI1070X-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 1.2A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 15 V
Description: MOSFET N-CH 30V 1.2A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 99mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.55V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 385 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.27 EUR |
SI1039X-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.87A SC89
Description: MOSFET P-CH 12V 0.87A SC89
Produkt ist nicht verfügbar
SI1039X-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 0.87A SC89
Description: MOSFET P-CH 12V 0.87A SC89
Produkt ist nicht verfügbar