SI7460DP-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 11A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Description: MOSFET N-CH 60V 11A PPAK SO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SO-8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerPAK® SO-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.51 EUR |
6000+ | 1.45 EUR |
9000+ | 1.4 EUR |
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Produktbewertung abgeben
Technische Details SI7460DP-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 60V 11A PPAK SO-8, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V.
Weitere Produktangebote SI7460DP-T1-E3 nach Preis ab 1.06 EUR bis 3.47 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SI7460DP-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 60V 11A 8-Pin PowerPAK SO T/R |
auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7460DP-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 60V 11A 8-Pin PowerPAK SO T/R |
auf Bestellung 1772 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7460DP-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 60V 11A 8-Pin PowerPAK SO T/R |
auf Bestellung 1772 Stücke: Lieferzeit 14-21 Tag (e) |
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SI7460DP-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 11A PPAK SO-8 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 18A, 10V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V |
auf Bestellung 11085 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7460DP-T1-E3 | Hersteller : Vishay Semiconductors | MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 |
auf Bestellung 10950 Stücke: Lieferzeit 10-14 Tag (e) |
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SI7460DP-T1-E3 | Hersteller : VISHAY | 05+ QFN-8 |
auf Bestellung 1330 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7460DP-T1-E3 | Hersteller : VISHAY | 09+ |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7460DP-T1-E3 | Hersteller : VISHAY | 09+ |
auf Bestellung 518 Stücke: Lieferzeit 21-28 Tag (e) |
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SI7460DP-T1-E3 Produktcode: 49740 |
Verschiedene Bauteile > Verschiedene Bauteile 2 |
Produkt ist nicht verfügbar
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SI7460DP-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 60V 11A 8-Pin PowerPAK SO T/R |
Produkt ist nicht verfügbar |
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SI7460DP-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 18A; Idm: 40A; 5.4W Drain-source voltage: 60V Drain current: 18A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 5.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.1µC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® SO8 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI7460DP-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 18A; Idm: 40A; 5.4W Drain-source voltage: 60V Drain current: 18A On-state resistance: 12mΩ Type of transistor: N-MOSFET Power dissipation: 5.4W Polarisation: unipolar Kind of package: reel; tape Gate charge: 0.1µC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 40A Mounting: SMD Case: PowerPAK® SO8 |
Produkt ist nicht verfügbar |