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SI7784DP-T1-GE3 SI7784DP-T1-GE3 Vishay Siliconix si7784dp.pdf Description: MOSFET N-CH 30V 35A PPAK SO-8
Produkt ist nicht verfügbar
SI7788DP-T1-GE3 SI7788DP-T1-GE3 Vishay Siliconix si7788dp.pdf Description: MOSFET N-CH 30V 50A PPAK SO-8
auf Bestellung 6870 Stücke:
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SI7790DP-T1-GE3 SI7790DP-T1-GE3 Vishay Siliconix si7790dp.pdf Description: MOSFET N-CH 40V 50A PPAK SO-8
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SI7802DN-T1-GE3 SI7802DN-T1-GE3 Vishay Siliconix si7802dn.pdf Description: MOSFET N-CH 250V 1.24A 1212-8
Produkt ist nicht verfügbar
SI7882DP-T1-GE3 SI7882DP-T1-GE3 Vishay Siliconix 71858.pdf Description: MOSFET N-CH 12V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7948DP-T1-GE3 SI7948DP-T1-GE3 Vishay Siliconix si7948dp.pdf Description: MOSFET 2N-CH 60V 3A PPAK SO-8
Produkt ist nicht verfügbar
Si7980DP-T1-GE3 Si7980DP-T1-GE3 Vishay Siliconix si7980dp.pdf Description: MOSFET 2N-CH 20V 8A PPAK SO-8
auf Bestellung 8085 Stücke:
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SIA408DJ-T1-GE3 SIA408DJ-T1-GE3 Vishay Siliconix sia408dj.pdf Description: MOSFET N-CH 30V 4.5A SC70-6
auf Bestellung 2757 Stücke:
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SIA415DJ-T1-GE3 SIA415DJ-T1-GE3 Vishay Siliconix sia415dj.pdf Description: MOSFET P-CH 20V 12A SC70-6
auf Bestellung 5849 Stücke:
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SIA417DJ-T1-GE3 SIA417DJ-T1-GE3 Vishay Siliconix sia417dj.pdf Description: MOSFET P-CH 8V 12A SC70-6
Produkt ist nicht verfügbar
SIA419DJ-T1-GE3 SIA419DJ-T1-GE3 Vishay Siliconix sia419dj.pdf Description: MOSFET P-CH 20V 12A SC70-6
Produkt ist nicht verfügbar
SIA426DJ-T1-GE3 SIA426DJ-T1-GE3 Vishay Siliconix sia426dj.pdf Description: MOSFET N-CH 20V 4.5A SC70-6
auf Bestellung 8006 Stücke:
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SIA430DJ-T1-GE3 SIA430DJ-T1-GE3 Vishay Siliconix sia430dj.pdf Description: MOSFET N-CH 20V 12A SC70-6
auf Bestellung 3605 Stücke:
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SIA813DJ-T1-GE3 SIA813DJ-T1-GE3 Vishay Siliconix sia813dj.pdf Description: MOSFET P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA911EDJ-T1-GE3 SIA911EDJ-T1-GE3 Vishay Siliconix sia911ed.pdf Description: MOSFET 2P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA917DJ-T1-GE3 SIA917DJ-T1-GE3 Vishay Siliconix sia917dj.pdf Description: MOSFET 2P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIB415DK-T1-GE3 SIB415DK-T1-GE3 Vishay Siliconix sib415dk.pdf Description: MOSFET P-CH 30V 9A SC75-6
Produkt ist nicht verfügbar
SIB417DK-T1-GE3 SIB417DK-T1-GE3 Vishay Siliconix sib417dk.pdf Description: MOSFET P-CH 8V 9A SC75-6
Produkt ist nicht verfügbar
SIB419DK-T1-GE3 SIB419DK-T1-GE3 Vishay Siliconix sib419dk.pdf Description: MOSFET P-CH 12V 9A SC75-6
Produkt ist nicht verfügbar
SIB800EDK-T1-GE3 SIB800EDK-T1-GE3 Vishay Siliconix sib800ed.pdf Description: MOSFET N-CH 20V 1.5A SC75-6
Produkt ist nicht verfügbar
SIB914DK-T1-GE3 SIB914DK-T1-GE3 Vishay Siliconix sib914dk.pdf Description: MOSFET 2N-CH 8V 1.5A PPAK SC75-6
Produkt ist nicht verfügbar
SIR850DP-T1-GE3 SIR850DP-T1-GE3 Vishay Siliconix sir850dp.pdf Description: MOSFET N-CH 25V 30A PPAK SO-8
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SiR892DP-T1-GE3 SiR892DP-T1-GE3 Vishay Siliconix sir892dp.pdf Description: MOSFET N-CH 25V 50A PPAK SO-8
auf Bestellung 5163 Stücke:
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SI4110DY-T1-GE3 SI4110DY-T1-GE3 Vishay Siliconix si4110dy.pdf Description: MOSFET N-CH 80V 17.3A 8-SOIC
Produkt ist nicht verfügbar
SI4170DY-T1-GE3 SI4170DY-T1-GE3 Vishay Siliconix si4170dy.pdf Description: MOSFET N-CH 30V 30A 8-SOIC
Produkt ist nicht verfügbar
Si4226DY-T1-GE3 Si4226DY-T1-GE3 Vishay Siliconix si4226dy.pdf Description: MOSFET 2N-CH 25V 8A 8-SOIC
Produkt ist nicht verfügbar
SI4448DY-T1-E3 SI4448DY-T1-E3 Vishay Siliconix si4448dy.pdf Description: MOSFET N-CH 12V 50A 8-SOIC
auf Bestellung 2347 Stücke:
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SI4660DY-T1-GE3 SI4660DY-T1-GE3 Vishay Siliconix si4660dy.pdf Description: MOSFET N-CH 25V 23.1A 8-SOIC
Produkt ist nicht verfügbar
SI4668DY-T1-GE3 SI4668DY-T1-GE3 Vishay Siliconix si4668dy.pdf Description: MOSFET N-CH 25V 16.2A 8-SOIC
Produkt ist nicht verfügbar
SI4866BDY-T1-GE3 SI4866BDY-T1-GE3 Vishay Siliconix si4866bd.pdf Description: MOSFET N-CH 12V 21.5A 8-SOIC
auf Bestellung 7138 Stücke:
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SI1012R-T1-GE3 SI1012R-T1-GE3 Vishay Siliconix si1012rx.pdf Description: MOSFET N-CH 20V 500MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
auf Bestellung 153000 Stücke:
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3000+0.24 EUR
6000+ 0.23 EUR
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30000+ 0.2 EUR
Mindestbestellmenge: 3000
SI1013R-T1-GE3 SI1013R-T1-GE3 Vishay Siliconix si1013rx.pdf Description: MOSFET P-CH 20V 350MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-75A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
auf Bestellung 84000 Stücke:
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3000+0.24 EUR
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30000+ 0.2 EUR
Mindestbestellmenge: 3000
SI1013X-T1-GE3 SI1013X-T1-GE3 Vishay Siliconix si1013rx.pdf Description: MOSFET P-CH 20V 350MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
auf Bestellung 15000 Stücke:
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3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
SI1016X-T1-GE3 SI1016X-T1-GE3 Vishay Siliconix si1016x.pdf Description: MOSFET N/P-CH 20V 0.485A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.24 EUR
6000+ 0.23 EUR
9000+ 0.21 EUR
Mindestbestellmenge: 3000
SI1022R-T1-GE3 SI1022R-T1-GE3 Vishay Siliconix si1022r.pdf Description: MOSFET N-CH 60V 330MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 500mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-75A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
auf Bestellung 21000 Stücke:
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3000+0.33 EUR
6000+ 0.32 EUR
9000+ 0.29 EUR
Mindestbestellmenge: 3000
SI1023X-T1-GE3 SI1023X-T1-GE3 Vishay Siliconix 71169.pdf Description: MOSFET 2P-CH 20V 0.37A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 370mA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
Mindestbestellmenge: 3000
SI1024X-T1-GE3 SI1024X-T1-GE3 Vishay Siliconix si1024x.pdf Description: MOSFET 2N-CH 20V 485MA SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 84000 Stücke:
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3000+0.25 EUR
Mindestbestellmenge: 3000
SI1026X-T1-GE3 SI1026X-T1-GE3 Vishay Siliconix si1026x.pdf Description: MOSFET 2N-CH 60V 0.305A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 270000 Stücke:
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3000+0.27 EUR
6000+ 0.25 EUR
9000+ 0.23 EUR
Mindestbestellmenge: 3000
SI1029X-T1-GE3 SI1029X-T1-GE3 Vishay Siliconix si1029x.pdf Description: MOSFET N/P-CH 60V 0.305A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 23pF @ 25V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 750nC @ 4.5V, 1700nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 12000 Stücke:
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3000+0.27 EUR
6000+ 0.25 EUR
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Mindestbestellmenge: 3000
SI1032R-T1-GE3 SI1032R-T1-GE3 Vishay Siliconix si1032r.pdf Description: MOSFET N-CH 20V 140MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
auf Bestellung 18000 Stücke:
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3000+0.24 EUR
6000+ 0.22 EUR
15000+ 0.21 EUR
Mindestbestellmenge: 3000
SI1032X-T1-GE3 SI1032X-T1-GE3 Vishay Siliconix si1032rx.pdf Description: MOSFET N-CH 20V 200MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
auf Bestellung 2634 Stücke:
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SI1034X-T1-GE3 SI1034X-T1-GE3 Vishay Siliconix si1034x.pdf Description: MOSFET 2N-CH 20V 0.18A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 6000 Stücke:
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6000+ 0.23 EUR
Mindestbestellmenge: 3000
SI1065X-T1-GE3 SI1065X-T1-GE3 Vishay Siliconix si1065x.pdf Description: MOSFET P-CH 12V 1.18A SC89-6
Produkt ist nicht verfügbar
SI1071X-T1-GE3 SI1071X-T1-GE3 Vishay Siliconix SI1071X.pdf Description: MOSFET P-CH 30V 0.96A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Ta)
Rds On (Max) @ Id, Vgs: 167mOhm @ 960mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 15 V
Produkt ist nicht verfügbar
SI2304BDS-T1-GE3 SI2304BDS-T1-GE3 Vishay Siliconix si2304bds.pdf Description: MOSFET N-CH 30V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.2 EUR
6000+ 0.19 EUR
9000+ 0.17 EUR
Mindestbestellmenge: 3000
SI2306BDS-T1-GE3 SI2306BDS-T1-GE3 Vishay Siliconix si2306bd.pdf Description: MOSFET N-CH 30V 3.16A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.31 EUR
6000+ 0.3 EUR
9000+ 0.28 EUR
Mindestbestellmenge: 3000
SI2312BDS-T1-GE3 SI2312BDS-T1-GE3 Vishay Siliconix si2312bds.pdf Description: MOSFET N-CH 20V 3.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
auf Bestellung 44000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.3 EUR
6000+ 0.29 EUR
9000+ 0.27 EUR
30000+ 0.26 EUR
Mindestbestellmenge: 3000
SI2323DS-T1-GE3 SI2323DS-T1-GE3 Vishay Siliconix si2323ds.pdf Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.44 EUR
6000+ 0.42 EUR
Mindestbestellmenge: 3000
SI4378DY-T1-GE3 SI4378DY-T1-GE3 Vishay Siliconix si4378dy.pdf Description: MOSFET N-CH 20V 19A 8-SOIC
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
SI4386DY-T1-GE3 SI4386DY-T1-GE3 Vishay Siliconix 73109.pdf Description: MOSFET N-CH 30V 11A 8SO
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
SI4401BDY-T1-GE3 SI4401BDY-T1-GE3 Vishay Siliconix si4401bd.pdf Description: MOSFET P-CH 40V 8.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.39 EUR
5000+ 1.34 EUR
Mindestbestellmenge: 2500
SI4430BDY-T1-GE3 SI4430BDY-T1-GE3 Vishay Siliconix si4430bd.pdf Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Produkt ist nicht verfügbar
SI4436DY-T1-GE3 SI4436DY-T1-GE3 Vishay Siliconix si4436dy.pdf Description: MOSFET N-CH 60V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Produkt ist nicht verfügbar
SI4559ADY-T1-GE3 SI4559ADY-T1-GE3 Vishay Siliconix si4559ady.pdf Description: MOSFET N/P-CH 60V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 3.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V, 650pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.02 EUR
5000+ 0.97 EUR
Mindestbestellmenge: 2500
SI4630DY-T1-GE3 SI4630DY-T1-GE3 Vishay Siliconix 73685.pdf Description: MOSFET N-CH 25V 40A 8-SOIC
Produkt ist nicht verfügbar
SI4686DY-T1-GE3 SI4686DY-T1-GE3 Vishay Siliconix si4686dy.pdf Description: MOSFET N-CH 30V 18.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.2A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Power Dissipation (Max): 3W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.02 EUR
Mindestbestellmenge: 2500
SI4800BDY-T1-GE3 SI4800BDY-T1-GE3 Vishay Siliconix si4800bd.pdf Description: MOSFET N-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.55 EUR
Mindestbestellmenge: 2500
SI4816BDY-T1-GE3 SI4816BDY-T1-GE3 Vishay Siliconix si4816bd.pdf Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.17 EUR
Mindestbestellmenge: 2500
SI4825DY-T1-GE3 SI4825DY-T1-GE3 Vishay Siliconix Description: MOSFET P-CH 30V 8.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Produkt ist nicht verfügbar
SI5435BDC-T1-GE3 SI5435BDC-T1-GE3 Vishay Siliconix 73137.pdf Description: MOSFET P-CH 30V 4.3A 1206-8
Produkt ist nicht verfügbar
SI7784DP-T1-GE3 si7784dp.pdf
SI7784DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 35A PPAK SO-8
Produkt ist nicht verfügbar
SI7788DP-T1-GE3 si7788dp.pdf
SI7788DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 50A PPAK SO-8
auf Bestellung 6870 Stücke:
Lieferzeit 10-14 Tag (e)
SI7790DP-T1-GE3 si7790dp.pdf
SI7790DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 40V 50A PPAK SO-8
auf Bestellung 691 Stücke:
Lieferzeit 10-14 Tag (e)
SI7802DN-T1-GE3 si7802dn.pdf
SI7802DN-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 250V 1.24A 1212-8
Produkt ist nicht verfügbar
SI7882DP-T1-GE3 71858.pdf
SI7882DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 13A PPAK SO-8
Produkt ist nicht verfügbar
SI7948DP-T1-GE3 si7948dp.pdf
SI7948DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 3A PPAK SO-8
Produkt ist nicht verfügbar
Si7980DP-T1-GE3 si7980dp.pdf
Si7980DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 8A PPAK SO-8
auf Bestellung 8085 Stücke:
Lieferzeit 10-14 Tag (e)
SIA408DJ-T1-GE3 sia408dj.pdf
SIA408DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 4.5A SC70-6
auf Bestellung 2757 Stücke:
Lieferzeit 10-14 Tag (e)
SIA415DJ-T1-GE3 sia415dj.pdf
SIA415DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
auf Bestellung 5849 Stücke:
Lieferzeit 10-14 Tag (e)
SIA417DJ-T1-GE3 sia417dj.pdf
SIA417DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 12A SC70-6
Produkt ist nicht verfügbar
SIA419DJ-T1-GE3 sia419dj.pdf
SIA419DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 12A SC70-6
Produkt ist nicht verfügbar
SIA426DJ-T1-GE3 sia426dj.pdf
SIA426DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 4.5A SC70-6
auf Bestellung 8006 Stücke:
Lieferzeit 10-14 Tag (e)
SIA430DJ-T1-GE3 sia430dj.pdf
SIA430DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 12A SC70-6
auf Bestellung 3605 Stücke:
Lieferzeit 10-14 Tag (e)
SIA813DJ-T1-GE3 sia813dj.pdf
SIA813DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA911EDJ-T1-GE3 sia911ed.pdf
SIA911EDJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIA917DJ-T1-GE3 sia917dj.pdf
SIA917DJ-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 4.5A SC70-6
Produkt ist nicht verfügbar
SIB415DK-T1-GE3 sib415dk.pdf
SIB415DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 9A SC75-6
Produkt ist nicht verfügbar
SIB417DK-T1-GE3 sib417dk.pdf
SIB417DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 9A SC75-6
Produkt ist nicht verfügbar
SIB419DK-T1-GE3 sib419dk.pdf
SIB419DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 9A SC75-6
Produkt ist nicht verfügbar
SIB800EDK-T1-GE3 sib800ed.pdf
SIB800EDK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 1.5A SC75-6
Produkt ist nicht verfügbar
SIB914DK-T1-GE3 sib914dk.pdf
SIB914DK-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 8V 1.5A PPAK SC75-6
Produkt ist nicht verfügbar
SIR850DP-T1-GE3 sir850dp.pdf
SIR850DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 30A PPAK SO-8
auf Bestellung 2352 Stücke:
Lieferzeit 10-14 Tag (e)
SiR892DP-T1-GE3 sir892dp.pdf
SiR892DP-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 50A PPAK SO-8
auf Bestellung 5163 Stücke:
Lieferzeit 10-14 Tag (e)
SI4110DY-T1-GE3 si4110dy.pdf
SI4110DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 17.3A 8-SOIC
Produkt ist nicht verfügbar
SI4170DY-T1-GE3 si4170dy.pdf
SI4170DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 30A 8-SOIC
Produkt ist nicht verfügbar
Si4226DY-T1-GE3 si4226dy.pdf
Si4226DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 25V 8A 8-SOIC
Produkt ist nicht verfügbar
SI4448DY-T1-E3 si4448dy.pdf
SI4448DY-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 50A 8-SOIC
auf Bestellung 2347 Stücke:
Lieferzeit 10-14 Tag (e)
SI4660DY-T1-GE3 si4660dy.pdf
SI4660DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 23.1A 8-SOIC
Produkt ist nicht verfügbar
SI4668DY-T1-GE3 si4668dy.pdf
SI4668DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 16.2A 8-SOIC
Produkt ist nicht verfügbar
SI4866BDY-T1-GE3 si4866bd.pdf
SI4866BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 21.5A 8-SOIC
auf Bestellung 7138 Stücke:
Lieferzeit 10-14 Tag (e)
SI1012R-T1-GE3 si1012rx.pdf
SI1012R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 500MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
auf Bestellung 153000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.24 EUR
6000+ 0.23 EUR
9000+ 0.21 EUR
30000+ 0.2 EUR
Mindestbestellmenge: 3000
SI1013R-T1-GE3 si1013rx.pdf
SI1013R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 350MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-75A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.24 EUR
6000+ 0.23 EUR
9000+ 0.21 EUR
30000+ 0.2 EUR
Mindestbestellmenge: 3000
SI1013X-T1-GE3 si1013rx.pdf
SI1013X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 350MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
SI1016X-T1-GE3 si1016x.pdf
SI1016X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 20V 0.485A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.24 EUR
6000+ 0.23 EUR
9000+ 0.21 EUR
Mindestbestellmenge: 3000
SI1022R-T1-GE3 si1022r.pdf
SI1022R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 330MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Ta)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 500mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-75A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 25 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.33 EUR
6000+ 0.32 EUR
9000+ 0.29 EUR
Mindestbestellmenge: 3000
SI1023X-T1-GE3 71169.pdf
SI1023X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.37A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 370mA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.27 EUR
Mindestbestellmenge: 3000
SI1024X-T1-GE3 si1024x.pdf
SI1024X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 485MA SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 485mA
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.25 EUR
Mindestbestellmenge: 3000
SI1026X-T1-GE3 si1026x.pdf
SI1026X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 60V 0.305A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 270000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.27 EUR
6000+ 0.25 EUR
9000+ 0.23 EUR
Mindestbestellmenge: 3000
SI1029X-T1-GE3 si1029x.pdf
SI1029X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 0.305A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA, 190mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V, 23pF @ 25V
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 750nC @ 4.5V, 1700nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.27 EUR
6000+ 0.25 EUR
9000+ 0.23 EUR
Mindestbestellmenge: 3000
SI1032R-T1-GE3 si1032r.pdf
SI1032R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 140MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.24 EUR
6000+ 0.22 EUR
15000+ 0.21 EUR
Mindestbestellmenge: 3000
SI1032X-T1-GE3 si1032rx.pdf
SI1032X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 200MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
auf Bestellung 2634 Stücke:
Lieferzeit 10-14 Tag (e)
SI1034X-T1-GE3 si1034x.pdf
SI1034X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.18A SC89
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 180mA
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.24 EUR
6000+ 0.23 EUR
Mindestbestellmenge: 3000
SI1065X-T1-GE3 si1065x.pdf
SI1065X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 1.18A SC89-6
Produkt ist nicht verfügbar
SI1071X-T1-GE3 SI1071X.pdf
SI1071X-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 0.96A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Ta)
Rds On (Max) @ Id, Vgs: 167mOhm @ 960mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.45V @ 250µA
Supplier Device Package: SC-89 (SOT-563F)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 15 V
Produkt ist nicht verfügbar
SI2304BDS-T1-GE3 si2304bds.pdf
SI2304BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.2 EUR
6000+ 0.19 EUR
9000+ 0.17 EUR
Mindestbestellmenge: 3000
SI2306BDS-T1-GE3 si2306bd.pdf
SI2306BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.16A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.31 EUR
6000+ 0.3 EUR
9000+ 0.28 EUR
Mindestbestellmenge: 3000
SI2312BDS-T1-GE3 si2312bds.pdf
SI2312BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.9A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
auf Bestellung 44000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.3 EUR
6000+ 0.29 EUR
9000+ 0.27 EUR
30000+ 0.26 EUR
Mindestbestellmenge: 3000
SI2323DS-T1-GE3 si2323ds.pdf
SI2323DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.7A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.44 EUR
6000+ 0.42 EUR
Mindestbestellmenge: 3000
SI4378DY-T1-GE3 si4378dy.pdf
SI4378DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 19A 8-SOIC
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
SI4386DY-T1-GE3 73109.pdf
SI4386DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 11A 8SO
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
SI4401BDY-T1-GE3 si4401bd.pdf
SI4401BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 40V 8.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 5 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.39 EUR
5000+ 1.34 EUR
Mindestbestellmenge: 2500
SI4430BDY-T1-GE3 si4430bd.pdf
SI4430BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Produkt ist nicht verfügbar
SI4436DY-T1-GE3 si4436dy.pdf
SI4436DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
Produkt ist nicht verfügbar
SI4559ADY-T1-GE3 si4559ady.pdf
SI4559ADY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 60V 5.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W, 3.4W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V, 650pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 4.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, 22nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.02 EUR
5000+ 0.97 EUR
Mindestbestellmenge: 2500
SI4630DY-T1-GE3 73685.pdf
SI4630DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 40A 8-SOIC
Produkt ist nicht verfügbar
SI4686DY-T1-GE3 si4686dy.pdf
SI4686DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 18.2A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.2A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.8A, 10V
Power Dissipation (Max): 3W (Ta), 5.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.02 EUR
Mindestbestellmenge: 2500
SI4800BDY-T1-GE3 si4800bd.pdf
SI4800BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.55 EUR
Mindestbestellmenge: 2500
SI4816BDY-T1-GE3 si4816bd.pdf
SI4816BDY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 30V 5.8A/8.2A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W, 1.25W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 8.2A
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.17 EUR
Mindestbestellmenge: 2500
SI4825DY-T1-GE3
SI4825DY-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 8.1A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Produkt ist nicht verfügbar
SI5435BDC-T1-GE3 73137.pdf
SI5435BDC-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 4.3A 1206-8
Produkt ist nicht verfügbar
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